Preface |
Porous SiC Preparation, Characterization and Morphology / 1: |
Introduction / 1.1: |
Triangular Porous Morphology in n-type 4H-SiC / 1.2: |
Nano-columnar Pore Formation in 6H SiC / 1.3: |
Summary / 1.4: |
Acknowledgements |
References |
Processing Porous SiC: Diffusion, Oxidation, Contact Formation. / 2: |
Formation of Porous Layer / 2.1: |
Diffusion in Porous SiC / 2.3: |
Oxidation / 2.4: |
Contacts to Porous SiC / 2.5: |
Growth of SiC on Porous SiC Buffer Layers. / 3: |
SiC CVD Growth / 3.1: |
Growth of 3C-SiC on porous Si via Cold-Wall Epitaxy / 3.3: |
Growth of 3C-SiC on Porous 3C-SiC / 3.4: |
Growth of 4H-SiC on Porous 4H-SiC / 3.5: |
Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching. / 3.6 Conclusion: |
Creation of Porous GaN by Electroless Etching / 4.1: |
Morphology Characterization / 4.3: |
Luminescence of Porous GaN / 4.4: |
Raman Spectroscopy of Porous GaN / 4.5: |
Summary and Conclusions / 4.6: |
Growth of GaN on Porous SiC by Molecular Beam Epitaxy. / 5: |
Morphology and Preparation of Porous SiC Substrates / 5.1: |
MBE Growth of GaN on Porous SiC Substrates / 5.3: |
GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC. / 5.4: |
Epitaxy of GaN on Porous SiNx Network / 6.1: |
Epitaxial Lateral Overgrowth of GaN on Porous TiN / 6.3: |
Growth of GaN on Porous SiC / 6.4: |
HVPE Growth of GaN on Porous SiC Substrates. / 7: |
PSC SubstrateFabrication and Properties / 7.1: |
Epitaxial Growth of GaN Films on PSC / 7.3: |
Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers. / 8: |
Extended Defects In Epitaxially Grown GaN Thin Layers / 8.1: |
Dislocation Mechanisms in Conventional Lateral Epitaxy Overgrowth of GaN / 8.3: |
Growth of GaN on Porous SiC Substrates / 8.4: |
Growth of GaN on Porous SiN and TiN Interlayers / 8.5: |
Electrical Properties of Porous SiC. / 8.6: |
Resistivity and Hall Effect / 9.1: |
Deep Level Transient Spectroscopy / 9.3: |
Sample Considerations / 9.4: |
Potential Energy Near a Pore / 9.5: |
DLTS Data and Analysis / 9.6: |
Magnetism of Doped GaN Nanostructures. / 10: |
Mn-Doped GaN Crystal / 10.1: |
Mn-Doped GaN Thin Films / 10.3: |
Mn- and Cr-Doped GaN One-Dimensional Structures / 10.4: |
N-Doped Mn and CrClusters / 10.5: |
SiC Catalysis Technology. / 10.6: |
Silicon Carbide Support / 11.1: |
Heat Effects During Reaction / 11.3: |
Reactions on SiC as Catalytic Supports / 11.4: |
Examples of SiC Catalyst Applications / 11.5: |
Prospects and Conclusions / 11.6: |
Nanoporous SiC as a Semi-Permeable Biomembrane for Medical Use: Practical and Theoretical Considerations. / 12: |
The Rationale for Implantable Semi-Permeable Materials / 12.1: |
The Biology of Soluble Signaling Proteins in Tissue / 12.2: |
Measuring Cytokine Secretion In Living Tissues and Organs / 12.3: |
Creating a Biocompatible Tissue û Device Interface: Advantages of SiC / 12.4: |
The Testing of SiC Membranes for Permeability of Proteins / 12.5: |
Improving the Structure of SiC Membranes for Biosensor Interfaces / 12.6: |
Theoretical Considerations: Modeling Diffusion through a Porous Membrane / 12.7: |
Future Development: Marriage of Membrane and Microchip / 12.8: |
Conclusions <9> / 12.9: |
Conclusion / 3.6: |
Crystal Anodization / 10.6 Summary: |
Description of the Porous Structure / 1.2.2: |
Model of the Morphology / 1.2.3: |
Nano-columnar Pore Formation in 6H-SiC |
Experimental / 1.3.1: |
Results / 1.3.2: |
Discussion / 1.3.3: |
Processing Porous SiC: Diffusion, Oxidation, Contact Formation |
Growth of SiC on Porous SiC Buffer Layers |
Growth of 3C-SiC on Porous Si via Cold-Wall Epitaxy |
Growth on Porous Si Substrates / 3.3.1: |
Growth on Stabilized Porous Si Substrates / 3.3.2: |
Growth in LPCVD Cold-wall Reactor / 3.4.1: |
Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching |
Porous GaN Derived from Unintentionally Doped Films / 4.3.1: |
Transmission Electron Microscopy (TEM) Characterization / 4.3.2: |
Cathodoluminescence (CL) of Porous GaN / 4.4.1: |
Photoluminescence (PL) of Porous GaN / 4.4.2: |
Characteristics of Raman scattering in GaN / 4.5.1: |
Raman Spectra of Porous GaN Excited Below Band Gap / 4.5.2: |
Growth of GaN on Porous SiC by Molecular Beam Epitaxy |
Porous Substrates / 5.2.1: |
Hydrogen Etching / 5.2.2: |
Experimental Details / 5.3.1: |
Film Structure / 5.3.2: |
Film Strain / 5.3.3: |
GaN Lateral Epitaxy Growth Using Porous SiN[subscript x], TiN[subscript x] and SiC |
Epitaxy of GaN on Porous SiN[subscript x] Network |
Three-step Growth Method / 6.2.1: |
Structural and Optical Characterization / 6.2.2: |
Schottky Diodes (SDs) on Undoped GaN Templates / 6.2.3: |
Deep Level Transition Spectrum / 6.2.4: |
Formation of Porous TiN / 6.3.1: |
Growth of GaN on Porous TiN / 6.3.2: |
Characterization by XRD / 6.3.3: |
Characterization by TEM / 6.3.4: |
Characterization by PL / 6.3.5: |
Fabrication of Porous SiC / 6.4.1: |
GaN Growth on Hydrogen Polished Porous SiC / 6.4.2: |
GaN Growth on Chemical Mechanical Polished Porous SiC / 6.4.3: |
HVPE Growth of GaN on Porous SiC Substrates |
PSC Substrate Fabrication and Properties |
Formation of Various Types of SPSC Structure / 7.2.1: |
Dense Layer / 7.2.2: |
Monitoring of Anodization Process / 7.2.3: |
Vacancy Model of Primary Pore Formation / 7.2.4: |
Stability of SPSC Under Post-Anodization Treatment / 7.2.5: |
Epitaxial Growth of GaN Films on PSC Substrates |
The Growth and Its Effect on the Structure of the PSC Substrate / 7.3.1: |
Properties of the GaN Films Grown / 7.3.2: |
Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers / 7.4: |
Extended Defects in Epitaxially Grown GaN Thin Layers |
GaN Growth on a TiN Interlayer / 8.5.1: |
GaN Growth on a SiN Interlayer / 8.5.2: |
Electrical Properties of Porous SiC |
Fundamentals of DLTS / 9.3.1: |
Method of Solving the General Equation / 9.3.2: |
Magnetism of Doped GaN Nanostructures |
Mn-Doped GaN (1120) Surface / 10.3.1: |
Mn-Doped GaN (1010) Surface / 10.3.2: |
Mn and C Codoped in GaN (1010) Surface / 10.3.3: |
Mn-Doped GaN Nanowires / 10.4.1: |
Cr-Doped GaN Nanotubes / 10.4.2: |
Cr-Doped GaN Nanohole Arrays / 10.4.3: |
N-Doped Mn and Cr Clusters |
Giant Magnetic Moments of Mn[subscript x]N Clusters / 10.5.1: |
N-induced Magnetic Transition in Small Cr[subscript x]N Clusters / 10.5.2: |
SiC Catalysis Technology |
Pt/[beta]-SiC Catalyst for Catalytic Combustion of Carbon Particles in Diesel Engines / 11.5.1: |
Complete Oxidation of Methane / 11.5.2: |
SiC-Supported MoO[subscript 3]-Carbon-Modified Catalyst for the n-Heptane Isomerization / 11.5.3: |
Selective Oxidation of H[subscript 2]S Over SiC-Supported Iron Catalysts into Elemental Sulfur / 11.5.4: |
Partial Oxidation of n-Butane to Maleic Anhydride Using SiC-Mixed and Pd-Modified Vanadyl Pyrophosphate (VPO) Catalysts (Case study) / 11.5.5: |
Nanoporous SiC as a Semi-Permeable Biomembrane for Medical Use: Practical and Theoretical Considerations |
Creating a Biocompatible Tissue - Device Interface: Advantages of SiC |
Effective Medium Models for a Porous Membrane / 12.7.1: |
Comparison with Experiment / 12.7.2: |
Conclusions |
Index |
Preface |
Porous SiC Preparation, Characterization and Morphology / 1: |
Introduction / 1.1: |