Preface |
Organizers |
Oxide Wear-Out, Reliability, Stress and Interfaces / I: |
A Review of Oxide Wearout, Breakdown, and Reliability / D. Dumin |
Surface And Interface Study Of Ion Beam Deposited Silicon oxide Thin films / Heinz D. Wazenboeck ; Emmerich Bertagnolli ; Bernhard Basnar ; Juergen Smoliner ; Martin Gritsch ; Herbert Hutter ; Josef Brenner ; C. Tomastik ; Herbert Storri |
Study of Inversion Layer Hole Mobility In p-Mosfet During High-field Stressing / R. Jarawal ; D. Misra |
Two Limiting Thinnesses Of The Ultrathin Gate Oxide / Samares Kar |
SiO[subscript 2] Stress and Interfaces / II: |
The Connection Between oxide leakage currents and Si/SiO[subscript 2] Interface Trap Generation / P. M. Lenahan |
Charging Damage During Plasma Enhanced Dielectric Deposition / K. Cheung |
Kinetics and Mechanisms of Organic Contaminant Interactions at Silicon Surfaces in High Temperature Processes / N. Rana ; P. Raghu ; F. Shadman |
SiO[subscript 2] Films and Properties / III: |
Remote Plasma Deposited Gate Dielectrics on Si and SiGe Mosfets / T. Ngai ; R. Sharma ; J. Fretwell ; X. Chen ; J. Chen ; W. Brookover ; S. Banerjee |
Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications / S. P. Tay ; R. Sharangpani ; Y. Z. Hu |
Processing of Thick Thermal Gate Oxides in Trenchs / C. T. Wu ; R. Ridley ; G. Dolny ; T. Grebs ; J. Hao ; S. Suliman ; B. Venkataraman ; O. Awadelkarim ; R. Williams ; P. Roman ; J. Ruzyllo |
Electrical Properties of SiO[subscript 2]-Films Prepared by VUV Chemical Vapor Deposition / Y. Motoyama ; J. Miyano ; K. Tosikawa ; Y. Yagi ; K. Kurosawa ; A. Yokotani ; W. Sasaki |
SiO[subscript 2] Film Deposition on Different Substrate Materials by Photo- CVD Using Vacuum Ultraviolet Radiation / K. Toshikawa |
Silicon Nitrides/ Oxynitrides / IV: |
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities / M. Petravic ; J. S. Williams ; P. N. K. Deenapanray |
Characteristics of Silicon Oxynitrides Made By ECR Plasmas / J. A. Diniz ; P. J. Tatsch ; J. Swart |
Radiation Hardening of Oxynitrides Formed By Low Nitrogen Implantation into Silicon Prior to Oxidation / J. Godoy Fo |
Silicon Nitrides/ Oxynitrides II / V: |
Material and Process Considerations of Ultra thin Silicon (Oxy) Nitride Films Grown on Silicon and SiO[subscript 2] Surfaces / C. P. D'Emic ; E. P. Gusev ; K. K. Chan ; T. Zabel ; M. Copel ; R. Murphy ; P. Kozolowski ; J. Newbury |
Silicon OxyNitride: A Versatile Material for Integrated Optics Application / K. Worhoff ; A. Driessen ; P. V. Lambeck |
Characterization of Silicon Oxynitride Thin Films Deposited By ECR-PECVD / C. Simionescu ; J. Wojcik ; H. K. Haugen ; J. A. Davies ; P. Mascher |
Silicon Nitrides/ Oxynitrides III / VI: |
Characterization of Low- Temperature Magnetoplasma- Grown Si Oxynitride and Si Oxide / H. Ikoma |
Advances in Single Wafer Chemical Deposition of Oxide and Nitride films / W. Palmer ; Z. Gabric |
High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals / T. Ohmi ; S. Sugawa ; M. Hirayama |
Silicon Nitride |
Thermally Induced Stress Changes in High Density Plasma Deposited Silicon Nitride Films / R. E. Shah ; H. Baumann ; D. Serries ; M. Mikulla ; R. Keiffer |
Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties / K. Muraoka ; K. Kurihara |
Influence of Low- energy argon Ion Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties / I. P. Petrenko ; V. A. Gritsenko ; L. M. Logvinsky ; H. Wong |
Authors Index |
Subject Index |
Preface |
Organizers |
Oxide Wear-Out, Reliability, Stress and Interfaces / I: |
A Review of Oxide Wearout, Breakdown, and Reliability / D. Dumin |
Surface And Interface Study Of Ion Beam Deposited Silicon oxide Thin films / Heinz D. Wazenboeck ; Emmerich Bertagnolli ; Bernhard Basnar ; Juergen Smoliner ; Martin Gritsch ; Herbert Hutter ; Josef Brenner ; C. Tomastik ; Herbert Storri |
Study of Inversion Layer Hole Mobility In p-Mosfet During High-field Stressing / R. Jarawal ; D. Misra |