Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution / 1: |
Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds / 2: |
Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique / 3: |
Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects / 4: |
Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches / 5: |
EPR Identification of Intrinsic Defects in 4H-SiC / 6: |
Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide / 7: |
Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC / 8: |
Characterization of defects in silicon carbide by Raman spectroscopy / 9: |
Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation / 10: |
Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers / 11: |
Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation / 12: |
Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation / 13: |
Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors / 14: |
Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems / 15: |
Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces / 16: |
Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS / 17: |
Epitaxial Graphene: an new Material / 18: |
Density Functional Study of Graphene Overlayers on SiC / 19: |
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution / 1: |
Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds / 2: |
Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique / 3: |
Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects / 4: |
Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches / 5: |
EPR Identification of Intrinsic Defects in 4H-SiC / 6: |