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図書

1. 築炉技能ハンドブック. 改訂版

日本築炉協会編

図書

2. Growth, defects, and novel applications

edited by Peter Friedrichs ... [et al.]

出版情報:	Weinheim : Wiley-VCH, c2010 xxii, 506 p. ; 25 cm
シリーズ名:	Silicon carbide / edited by Peter Friedrichs ... [et al.] ; 1
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目次情報: 続きを見る

Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution / 1：

Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds / 2：

Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique / 3：

Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects / 4：

Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches / 5：

EPR Identification of Intrinsic Defects in 4H-SiC / 6：

Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide / 7：

Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC / 8：

Characterization of defects in silicon carbide by Raman spectroscopy / 9：

Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation / 10：

Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers / 11：

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation / 12：

Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation / 13：

Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors / 14：

Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems / 15：

Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces / 16：

Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS / 17：

Epitaxial Graphene: an new Material / 18：

Density Functional Study of Graphene Overlayers on SiC / 19：

Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution / 1：

Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds / 2：

Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique / 3：

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