Preface |
Acknowledgments |
List of Symbols |
List of Abbreviations |
Introduction / 1: |
Photovoltaic Energy Conversion / 1.1: |
Solar Cells and Solar Energy Conversion / 1.2: |
Solar Cell Applications / 1.3: |
References |
Material Properties and Device Physics Basic to Photovoltaics / 2: |
Material Properties / 2.1: |
Structure of solids / 2.2.1: |
Phonon spectra of solids / 2.2.2: |
Electron energy levels in solids / 2.2.3: |
Optical phenomena in solids / 2.2.4: |
Carrier recombination and trapping / 2.2.5: |
Photocarrier generation / 2.2.6: |
Transport / 2.3: |
Transport processes in bulk solids / 2.3.1: |
Transport processes at interfaces / 2.3.2: |
Continuity concept / 2.3.3: |
Electrostatics / 2.3.4: |
The Mathematical System / 2.4: |
Origins of Photovoltaic Action / 2.5: |
Structures, Materials, and Scale / 3: |
Basic Structures for Photovoltaic Action / 3.1: |
General comments on band diagrams / 3.2.1: |
Photovoltaic action arising from built-in electrostatic fields / 3.2.2: |
Photovoltaic action arising from diffusion / 3.2.3: |
Photovoltaic action arising from effective fields / 3.2.4: |
Summary of practical structures / 3.2.5: |
Key Materials / 3.3: |
Absorber materials / 3.3.1: |
Contact materials / 3.3.2: |
Length Scale Effects for Materials and Structures / 3.4: |
The role of scale in absorption and collection / 3.4.1: |
Using the nano-scale to capture lost energy / 3.4.2: |
The role of scale in light management / 3.4.3: |
Homojunction Solar Cells / 4: |
Overview of Homojunction Solar Cell Device Physics / 4.1: |
The homojunction barrier region / 4.2.1: |
Analysis of Homojunction Device Physics: Numerical Approach / 4.3: |
Basic p-n homojunction / 4.3.1: |
Addition of a front HT-EBL / 4.3.2: |
Addition of a front HT-EBL and back ET-HBL / 4.3.3: |
Addition of a front high-low junction / 4.3.4: |
A p-i-n cell with a front HT-EBL and back ET-HBL / 4.3.5: |
A p-i-n cell using a poor ?? absorber / 4.3.6: |
Analysis of Homojunction Device Physics: Analytical Approach / 4.4: |
Some Homojunction Configurations / 4.4.1: |
Semiconductor-semiconductor Heterojunction Cells / 5: |
Overview of Heterojunction Solar Cell Device Physics / 5.1: |
The heterojunction barrier region / 5.2.1: |
Analysis of Heterojunction Device Physics: Numerical Approach / 5.3: |
Absorption by free electron-hole pair excitations / 5.3.1: |
Absorption by exciton generation / 5.3.2: |
Analysis of Heterojunction Device Physics: Analytical Approach / 5.4: |
Absorption by free electron-hole excitations / 5.4.1: |
Absorption by excitons / 5.4.2: |
Some Heterojunction Configurations / 5.5: |
Surface-barrier Solar Cells / 6: |
Overview of Surface-barrier Solar Cell Device Physics / 6.1: |
The surface-barrier region / 6.2.1: |
Analysis of Surface-barrier Device Physics: Numerical Approach / 6.3: |
Analysis of Surface-barrier Device Physics: Analytical Approach / 6.4: |
Some Surface-barrier Configurations / 6.5: |
Dye-sensitized Solar Cells / 7: |
Overview of Dye-sensitized Solar Cell Device Physics / 7.1: |
The dye-sensitized solar cell barrier region / 7.2.1: |
Analysis of DSSC Device Physics: Numerical Approach / 7.3: |
Some DSSC Configurations / 7.4: |
The Absorption Coefficient / Appendix A: |
Radiative Recombination / Appendix B: |
Shockley-Read-Hall (Gap-state-assisted) Recombination / Appendix C: |
Conduction- and Valence-band Transport / Appendix D: |
The Quasi-neutral-region Assumption and Lifetime Semiconductors / Appendix E: |
Determining p(x) and n(x) for the Space-charge-neutral Regions of a Homojunction / Appendix F: |
Determining n(x) for the Space-charge-neutral Region of a Heterojunction p-type Bottom Material / Appendix G: |
Index |