| Introduction / 1： |
| A Survey of Semiconductors / 1.1： |
| Elemental Semiconductors / 1.1.1： |
| Binary Compounds / 1.1.2： |
| Oxides / 1.1.3： |
| Layered Semiconductors / 1.1.4： |
| Organic Semiconductors / 1.1.5： |
| Magnetic Semiconductors / 1.1.6： |
| Other Miscellaneous Semiconductors / 1.1.7： |
| Growth Techniques / 1.2： |
| Czochralski Method / 1.2.1： |
| Bridgman Method / 1.2.2： |
| Chemical Vapor Deposition / 1.2.3： |
| Molecular Beam Epitaxy / 1.2.4： |
| Liquid Phase Epitaxy / 1.2.5： |
| Summary |
| Electronic Band Structures / 2： |
| Quantum Mechanics / 2.1： |
| Translational Symmetry and Brillouin Zones / 2.2： |
| A Pedestrian's Guide to Group Theory / 2.3： |
| Definitions and Notations / 2.3.1： |
| Symmetry Operations of the Diamond and Zinc-Blende Structures / 2.3.2： |
| Representations and Character Tables / 2.3.3： |
| Some Applications of Character Tables / 2.3.4： |
| Empty Lattice or Nearly Free Electron Energy Bands / 2.4： |
| Nearly Free Electron Band Structure in a Zinc-Blende Crystal / 2.4.1： |
| Nearly Free Electron Energy Bands in Diamond Crystals / 2.4.2： |
| Band Structure Calculation by Pseudopotential Methods / 2.5： |
| Pseudopotential Form Factors in Zinc-Blende- and Diamond-Type Semiconductors / 2.5.1： |
| Empirical and Self-Consistent Pseudopotential Methods / 2.5.2： |
| The kċp Method of Band-Structure Calculations / 2.6： |
| Effective Mass of a Nondegenerate Band Using the kċp Method / 2.6.1： |
| Band Dispersion near a Degenerate Extremum: Top Valence Bands in Diamondand Zinc-Blende-Type Semiconductors / 2.6.2： |
| Tight-Binding or LCAO Approach to the Band Structure of Semiconductors / 2.7： |
| Molecular Orbitals and Overlap Parameters / 2.7.1： |
| Band Structure of Group-IV Elements by the Tight-Binding Method / 2.7.2： |
| Overlap Parameters and Nearest-Neighbor Distances / 2.7.3： |
| Problems |
| Vibrational Properties of Semiconductors, and Electron-Phonon Interactions / 3： |
| Phonon Dispersion Curves of Semiconductors / 3.1： |
| Models for Calculating Phonon Dispersion Curves of Semiconductors / 3.2： |
| Force Constant Models / 3.2.1： |
| Shell Model / 3.2.2： |
| Bond Models / 3.2.3： |
| Bond Charge Models / 3.2.4： |
| Electron-Phonon Interactions / 3.3： |
| Strain Tensor and Deformation Potentials / 3.3.1： |
| Electron-Acoustic-Phonon Interaction at Degenerate Bands / 3.3.2： |
| Piezoelectric Electron-Acoustic-Phonon Interaction / 3.3.3： |
| Electron-Optical-Phonon Deformation Potential Interactions / 3.3.4： |
| Frohlich Interaction / 3.3.5： |
| Interaction Between Electrons and Large-Wavevector Phonons: Intervalley Electron-Phonon Interaction / 3.3.6： |
| Electronic Properties of Defects / 4： |
| Classification of Defects / 4.1： |
| Shallow or Hydrogenic Impurities / 4.2： |
| Effective Mass Approximation / 4.2.1： |
| Hydrogenic or Shallow Donors / 4.2.2： |
| Donors Associated with Anisotropic Conduction Bands / 4.2.3： |
| Acceptor Levels in Diamond-and Zinc-Blende-Type Semiconductors / 4.2.4： |
| Deep Centers / 4.3： |
| Green's Function Method for Calculating Defect Energy Levels / 4.3.1： |
| An Application of the Green's Function Method: Linear Combination of Atomic Orbitals / 4.3.2： |
| Another Application of the Green's Function Method: Nitrogen in GaP and Ga AsP Alloys / 4.3.3： |
| Final Note on Deep Centers / 4.3.4： |
| Electrical Transport / 5： |
| Quasi-Classical Approach / 5.1： |
| Carrier Mobility for a Nondegenerate Electron Gas / 5.2： |
| Relaxation Time Approximation / 5.2.1： |
| Nondegenerate Electron Gas in a Parabolic Band / 5.2.2： |
| Dependence of Scattering and Relaxation Times on Electron Energy / 5.2.3： |
| Momentum Relaxation Times / 5.2.4： |
| Temperature Dependence of Mobilities / 5.2.5： |
| Modulation Doping / 5.3： |
| High-Field Transport and Hot Carrier Effects / 5.4： |
| Velocity Saturation / 5.4.1： |
| Negative Differential Resistance / 5.4.2： |
| Gunn Effect / 5.4.3： |
| Magneto-Transport and the Hall Effect / 5.5： |
| Magneto-Conductivity Tensor / 5.5.1： |
| Hall Effect / 5.5.2： |
| Hall Coefficient for Thin Film Samples (van der Pauw Method) / 5.5.3： |
| Hall Effect for a Distribution of Electron Energies / 5.5.4： |
| Optical Properties I / 6： |
| Macroscopic Electrodynamics / 6.1： |
| Digression: Units for the Frequency of Electromagnetic Waves / 6.1.1： |
| Experimental Determination of Optical Constants / 6.1.2： |
| Kramers-Kronig Relations / 6.1.3： |
| The Dielectric Function / 6.2： |
| Experimental Results / 6.2.1： |
| Microscopic Theory of the Dielectric Function / 6.2.2： |
| Joint Density of States and Van Hove Singularities / 6.2.3： |
| Van Hove Singularities in ϵi / 6.2.4： |
| Direct Absorption Edges / 6.2.5： |
| Indirect Absorption Edges / 6.2.6： |
| """"Forbidden"""" Direct Absorption Edges / 6.2.7： |
| Excitons / 6.3： |
| Exciton Effect at M0 Critical Points / 6.3.1： |
| Absorption Spectra of Excitons / 6.3.2： |
| Exciton Effect at M1 Critical Points or Hyperbolic Excitons / 6.3.3： |
| Exciton Effect at M3 Critical Points / 6.3.4： |
| Phonon-Polaritons and Lattice Absorption / 6.4： |
| Phonon-Polaritons / 6.4.1： |
| Lattice Absorption and Reflection / 6.4.2： |
| Multiphonon Lattice Absorption / 6.4.3： |
| Dynamic Effective Ionic Charges in Heteropolar Semiconductors / 6.4.4： |
| Absorption Associated with Extrinsic Electrons / 6.5： |
| Free-Carrier Absorption in Doped Semiconductors / 6.5.1： |
| Absorption by Carriers Bound to Shallow Donors and Acceptors / 6.5.2： |
| Modulation Spectroscopy / 6.6： |
| Frequency Modulated Reflectance and Thermoreflectance / 6.6.3： |
| Piezoreflectance / 6.6.4： |
| Electroreflectance (Franz-Keldysh Effect) / 6.6.5： |
| Photoreflectance / 6.6.6： |
| Reflectance Difference Spectroscopy / 6.6.7： |
| Optical Properties II / 7： |
| Emission Spectroscopies / 7.1： |
| Band-to-Band Transitions / 7.1.1： |
| Free-to-Bound Transitions / 7.1.2： |
| Donor-Acceptor Pair Transitions / 7.1.3： |
| Excitons and Bound Excitons / 7.1.4： |
| Luminescence Excitation Spectroscopy / 7.1.5： |
| Light Scattering Spectroscopies / 7.2： |
| Macroscopic Theory of Inelastic Light Scattering by Phonons / 7.2.1： |
| Raman Tensor and Selection Rules / 7.2.2： |
| Experimental Determination of Raman Spectra / 7.2.3： |
| Microscopic Theory of Raman Scattering / 7.2.4： |
| A Detour into the World of Feynman Diagrams / 7.2.5： |
| Brillouin Scattering / 7.2.6： |
| Experimental Determination of Brillouin Spectra / 7.2.7： |
| Resonant Raman and Brillouin Scattering / 7.2.8： |
| Photoelectron Spectroscopy / 8： |
| Photoemission / 8.1： |
| Angle-Integrated Photoelectron Spectra of the Valence Bands / 8.1.1： |
| Angle-Resolved Photoelectron Spectra of the Valence Bands / 8.1.2： |
| Core Levels / 8.1.3： |
| Inverse Photoemission |
| Surface Effects / 8.2： |
| Surface States and Surface Reconstruction / 8.3.1： |
| Surface Energy Bands / 8.3.2： |
| Fermi Level Pinning and Space Charge Layers / 8.3.3： |
| Effect of Quantum Confinement on Electrons and Phonons in Semiconductors / 9： |
| Quantum Confinement and Density of States / 9.1： |
| Quantum Confinement of Electrons and Holes / 9.2： |
| Semiconductor Materials for Quantum Wells and Superlattices / 9.2.1： |
| Classification of Multiple Quantum Wells and Superlattices / 9.2.2： |
| Confinement of Energy Levels of Electrons and Holes / 9.2.3： |
| Some Experimental Results / 9.2.4： |
| Phonons in Superlattices / 9.3： |
| Phonons in Superlattices: Folded Acoustic and Confined Optic Modes / 9.3.1： |
| Folded Acoustic Modes: Macroscopic Treatment / 9.3.2： |
| Confined Optical Modes: Macroscopic Treatment / 9.3.3： |
| Electrostatic Effects in Polar Crystals: Interface Modes / 9.3.4： |
| Raman Spectra of Phonons in Semiconductor Superlattices / 9.4： |
| Raman Scattering by Folded Acoustic Phonons / 9.4.1： |
| Raman Scattering by Confined Optical Phonons / 9.4.2： |
| Raman Scattering by Interface Modes / 9.4.3： |
| Macroscopic Models of Electron-LO Phonon (Fröhlich) Interaction in Multiple Quantum Wells / 9.4.4： |
| Electrical Transport: Resonant Tunneling / 9.5： |
| Resonant Tunneling Through a Double-Barrier Quantum Well / 9.5.1： |
| I-V Characteristics of Resonant Tunneling Devices / 9.5.2： |
| Quantum Hall Effects in Two-Dimensional Electron Gases / 9.6： |
| Landau Theory of Diamagnetism in a Three-Dimensional Free Electron Gas / 9.6.1： |
| Magneto-Conductivity of a Two-Dimensional Electron Gas: Filling Factor / 9.6.2： |
| The Experiment of von Klitzing, Pepper and Dorda / 9.6.3： |
| Explanation of the Hall Plateaus in the Integral Quantum Hall Effect / 9.6.4： |
| Concluding Remarks / 9.7： |
| Appendix: Pioneers of Semiconductor Physics Remember |
| Ultra-Pure Germanium: From Applied to Basic Research or an Old Semiconductor Offering New Opportunities / Eugene E. Haller |
| Two Pseudopotential Methods: Empirical and Ab Initio / Marvin L. Cohen |
| The Early Stages of Band-Structures Physics and Its Struggles for a Place in the Sun / Conyers Herring |
| Cyclotron Resonance and Structure of Conduction and Valence Band Edges in Silicon and Germanium / Charles Kittel |
| Optical Properties of Amorphous Semiconductors and Solar Cells / Jan Tauc |
| Optical Spectroscopy of Shallow Impurity Centers / Elias Burstein |
| On the Prehistory of Angular Resolved Photoemission / Neville V. Smith |
| The Discovery and Very Basics of the Quantum Hall Effect / Klaus von Klitzing |
| The Birth of the Semiconductor Superlattice / Leo Esaki |
| References |
| Subject Index |
| Table of Fundamental Physical Constants (Inside Front Cover) |
| Table of Units (Inside Back Cover) |
| Introduction / 1： |
| A Survey of Semiconductors / 1.1： |
| Elemental Semiconductors / 1.1.1： |
図書
図書
