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1.

図書

図書
editors, R.L. Opila ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001-2003  3 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-26, 2002-1, 2003-21
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2.

図書

図書
lead editor, Andrzej Wieckowski ; associate editors, E.W. Brooman ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  ix, 280 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-20
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3.

図書

図書
editors, B.A. Shaw, R.G. Buchheit, J.P. Moran
出版情報: Pennington, N.J. : Electrochemical Society, c2001  ix, 456 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-23
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4.

図書

図書
editors, A.G. Baca, R.F. Kopf
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 214 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-18
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目次情報: 続きを見る
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
InP HBT and HEMT Technology and Applications / A. Gutierrez-Aitken ; A. K. Oki ; D. C. Streit ; R. Lai ; D. Sawdai ; Y. C. Chen ; E. Kaneshiro ; R. Grundbacher ; P. C. Grossman ; T. Block ; P. Chin ; M. Barsky ; M. Wojtowicz ; H. C. Yen
Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications / R. F. Kopf ; N. G. Weimann ; R. A. Hamm ; R. W. Ryan ; A. Tate ; M. A. Melendes ; R. Melendes ; Q. Lee ; G. Georgiou ; Y. Baeyens ; Y-K. Chen
Non-Crystallographic Wet Etching of Gallium Arsenide / A. G. Baca ; J. R. Laroche ; P. C. Chang ; F. Ren
Chemical Etching Behavior of n-AlGaAs/p-AlGaAs Structures under Different Light Illumination Conditions / K. Shigyo ; Z. Kawazu
Progress in Mid-IR Type-II Interband Cascade Lasers / R. Q. Yang ; J. L. Bradshaw ; J. D. Bruno ; J. T. Pham ; D. E. Wortman
Development of III-Nitrides for Near-Infrared Optoelectronics using Intersubband Transitions / H. M. Ng ; C. Gmachl ; S. N. G. Chu ; A. Y. Cho
Visible Vertical Cavity Light Emitters for Fibre Optical Communication / M. Saarinen ; V. Vilokkinen ; P. Sipilo ; N. Xiang ; S. Orsila ; M. Guina ; P. Melanen ; M. Dumitrescu ; P. Uusimaa ; P. Savolainen ; M. Pessa
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors / N. Y. Li ; E. Armour ; P. R. Sharps ; H. Q. Hou
Antimonide-Based Long-Wavelength Lasers on GaAs Substrates / J. F. Klem ; O. Blum
Novel MOS Schemes for Electronic Devices with Photoanodically Grown Oxides on GaN Surfaces / D. Mistele ; T. Rotter ; R. Ferretti ; H. Klausing ; F. Fedler ; O. K. Semchinova ; J. Stemmer ; J. Aderhold ; J. Graul
GaN Power Devices / S. J. Pearton ; A. P. Zhang ; G. Dang ; X. A. Cao ; K. P. Lee ; H. Cho ; B. P. Gila ; J. W. Johnson ; C. Monier ; C. R. Abernathy ; J. Han ; J.-I. Chyi ; C.-M. Lee ; T.-E. Nee ; C.-C. Chuo ; G. C. Chi
Fabrication of an Integrated Optics 1 to 2 Optical Switch / Y. Hernandez ; J.-P. Vilcot ; D. Decoster ; J. Chazelas
Optical Characterization of Acceptor Implantation in GaN / B. J. Skromme ; G. L. Martinez ; A. Suvkhanov ; L. Krasnobaev ; D. B. Poker
Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides / C. I. H. Ashby ; C. C. Willan ; N. A. Missert ; P. P. Provencio ; D. M. Follstaedt ; G. M. Peake ; L. Griego
The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si / K. S. Nahm ; K. C. Kim ; C. I. Park ; J. I. Roh
SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors / B. Luo ; J. I. Chyi ; T. E. Nee ; C. M. Lee ; C. C. Chuo ; T. J. Anderson
The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs / V. P. Trivedi ; C. H. Hsu ; X. Cao ; C. S. Wu ; M. Hoppe ; J. Sasserath ; J. W. Lee
High Speed Devices for Wireless Applications II
III V Enhancement Mode Field Effect Transistor Technologies for Cellular Applications / J. Costa
Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization / J.-M. Kuo ; M. Melendes ; Y. K. Chen
The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Silicide Ohmic Contacts to 4H n-SiC / M. W. Cole ; P. C. Joshi ; C. W. Hubbard ; E. Ngo ; J. D. Demaree ; J. K. Hirvonen ; M. Wood ; M. Ervin ; C. J. K. Richardson ; M. H. Wisnioski
Author Index
Subject Index
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
5.

図書

図書
editors C.L. Claeys ... [et al.] ; sponsored by the Electrochemical Society, Inc., Electronics Division
出版情報: Bellingham, Wash. : Published in cooperation with SPIE-the International Society for Optical Engineering , Pennington, N.J. : Electrochemical Society, c2000  xix, 696 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-17
Proceedings / SPIE -- the International Society for Optical Engineering ; v. 4218
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目次情報: 続きを見る
Preface
High Purity Silicon Fabrication Techniques
Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf
The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si / B.M. Park ; I.S. Choi
Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals / K. Nakamura ; S. Maeda ; S. Togawa ; T. Saishoji ; J. Tomioka
High Pull Speed for Fast Pulled Crystal in Cz Growth / H.J. Oh ; J.H. Wang ; K.-M. Kim ; H.-D. Yoo
Micro-Fluctuation of Growth-Rate and Grown-in Defect Distribution in Cz-Si / M. Hasabe ; J. Fukuda ; T. Iwasaki ; H. Harada ; M. Tanaka
Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient / A.G. Ulyashin ; R. Job ; W.R. Fahrner ; A.V. Mudryi ; A.I. Patuk ; I.A. Shakin
Nucleation of Void Defects in Cz Silicon / Y. Yamanaka ; K. Tanahashi ; T. Mikayama ; N. Inoue ; A. Mori
The Formation Mechanism of Coupled Voids in Czochralski Silicon / F. Ishikawa ; S. Sadohara
Valence Force Field Analysis of Nitrogen in Silicon / A. Koukitsu
Intrinsic and Inpurity Related Defects
Silicon Float Zone Crystal Growth as a Tool for the Study of Defects and Impurities / T.F. Ciszek ; T.H. Wang
Transient Simulation of Grown-in Defect Dynamics in Czochralski Crystal Growth of Silicon / T. Mori ; Z. Wang ; R.A. Brown
Detection of Oxygen-Related Defects in Silicon Wafers by Highly Selective Reactive Ion Etching / K. Nakashima ; Y. Watanabe ; T. Yoshida ; Y. Mitsushima
Misfit Dislocation Nucleation Study in P/P[superscript +] Si / P. Feichtinger ; M.S. Goorsky ; D. Oster ; T. D'Silva ; J. Moreland
Screening of Dislocations in Silicon by Point Defects / I.V. Peidous ; K.V. Loiko
Vacancy-Nitrogen Complexes in Float-Zone Silicon / F. Quast ; P. Pichler ; H. Ryssel ; R. Falster
Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers / K. Sueoka ; M. Akatsuka ; T. Onno ; E. Asayama ; Y. Koike ; N. Adachi ; S. Sadamitsu ; H. Katahama
Threshold Stresses of Dislocation Generation Onset in Silicon / N. Balasubramanian ; T. Schuelke
Aggressive Monitoring of OSFs Using High Temperature Oxidation / K.-M. Bae ; J.-R. Kim ; D.-M. Lee ; S.-S. Kim ; C.-G. Koh ; S.-H. Pyi
Formation and Annihilation of Epitaxial Stacking Faults Generated from Pre-Existing Nucleation Sites in Silicon / C.R. Cho ; K.Y. Noh ; D.H. Lee ; Y.S. Kim ; S.W. Ko ; C.W. Kim ; D.H. Kim ; C.B. Son ; S.J. Kim ; D.H. Cho ; J.J. Choi ; D.J. Kim ; K.M. Bae ; G.A. Rozgonyi
Bulk and Surface Properties of Cz Silicon After Hydrogen Plasma Treatments / V.P. Markevich ; L.I. Murin ; J.L. Lindstrom ; V. Raiko ; J. Engemann
Metallic Impurities in Silicon
Tin Doping Effects in Silicon / E. Simoen ; C. Claeys ; V.B. Neimash ; A. Kraitchinskii ; M. Kras'ko ; O. Puzenko ; A. Blondeel ; P. Clauws
In-Situ Measurement of Iron in P-type Silicon with the [mu]W-PCD Technique / M. Porrini ; P. Tessariol
Radial Distributions of Transition Metal Defects in Float Zone Silicon Crystals / H. Lemke ; W. Zulehner ; B. Hallmann
Progress in Understanding the Physics of Copper in Silicon / A.A. Istratov ; C. Flink ; S. Baluasubramanian ; E.R. Weber ; H. Hieslmair ; S.A. McHugo ; H. Hedemann ; M. Seibt ; W. Schroter
Effect of Cobalt and Copper Contamination on the Electrical Properties of Processed Silicon / J. Benton ; T. Boone ; D. Jacobson ; P. Silverman ; C. Rafferty ; S. Weinzierl ; B. Vu
Copper Stable Isotope Spike Method as A Tool for Low Temperature Out-Diffusion of Copper in P-Type Silicon / B.-J. Maeng ; H.-S. Oh ; Y.-K. Hong
Effect of Aluminum on Oxide Growth and Oxide Charges in Silicon Wafers / H. Shimizu ; M. Ikeda ; C. Munakata ; N. Nagashima
Gettering Studies
Impact of Annealing Temperature and Cooling Rate on the Gettering of Fe by Polysilicon Backside / M.B. Shabani ; Y. Shiina ; Y. Shimanuki
300 mm Epi PP Wafer: Is There Sufficient Gettering? / D. Graff ; R. Wahlich ; W. Siebert ; E. Daub ; W.v. Ammon
Influence of LSTD Size on the Formation of Denuded Zone in Hydrogen Annealed Cz Silicon Wafers / R. Takeda ; T. Minami ; H. Saito ; Y. Hirano ; H. Fujimori ; K. Kashima ; Y. Matsushita
Integrated Gettering of Metallic Contaminants by Nanocavities in FZ Silicon Wafers / I. Perichaud ; E. Yakimov ; S. Martinuzzi
On the Effect of the Precipitation on DRAM Device Yield / R. Winkler
Intrinsic Gettering in Nitrogen Doped Czochralski Crystal Silicon / D. Yang ; R. Fan ; Y. Shen ; D. Tian ; L. Li ; D. Que
Device Performance
Trends in Lifetime Measurements / D.K. Schroder
Epitaxial Layer Lifetime Characterization in the Frequency Domain / J.E. Park ; S.E. Tan ; B.D. Choi ; M. Fletcher ; A. Buczkowski ; F. Kirscht
Minority Carrier Lifetime and Impurity Level Scan Map in Silicon / O. Palais ; J.J. Simon
Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well / A. Poyai ; R. Rooyackers ; G. Badenes ; E. Gaubas
Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices / H.-J. Schulze ; A. Frohnmeyer ; F.-J. Niedernostheide ; F. Hille ; P. Tutto ; T. Pavelka ; G. Wachutka
Two Dimensional Leakage Current Distribution of Ultrathin Oxide on Stepped Si Surface / M. Murata ; N. Tokuda ; D. Hojo ; K. Yamabe
The Gate oxide Quality of Annealed Cz Silicon Wafers and Its Influence on 4M DRAM Device Yield and Reliability
Investigation of GOI Test Methods on Silicon Surface Defect Failure Mechanisms / F. Gonzalez ; M. Hider ; R. Barbourm ; J. Hull ; S. Kitagawa
Gate oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology / G. Borionetti ; P. Godio ; F. Bonoli ; M. Cornara ; R. Orizio
Impacting Device Performance and Yield Through Sacrificial Oxidation Improvements / S. Ambadi ; D. Hannoun ; K. Kamekona ; J. Pearse ; G. Chang
On the Influence of the Interstitial Oxygen on DRAM Device Yield and Reliability
A Process Simulation Model for the Effects Due to Nitridation of Oxides / Y.-S. Oh ; D.E. Ward
Device Applications
High Resistivity Cz Silicon for RF Applications Substituting GaAs* / T. Abe ; W. Qu
Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications / P. Bellutti ; M. Boscardin ; G.-F. Dalla Betta ; L. Ferrario ; P. Gregori ; N. Zorzi
Intrinsic Defects in FZ Silicon and Their Impact on X-Ray PIN Sensor Parameters / H. Rieman ; A. Ludge ; K. Schwerd
SOI Wafer Fabrication by Atomic Layer Cleaving / M.I. Current ; I.J. Malik ; S.W. Bedell ; S.N. Farrens ; H. Kirk ; M. Korolik ; S. Kang ; M. Fuerfanger ; F.J. Henley
Effect of Material Properties on Stress-Induced Defect Generation in Trench SOI / W.A. Nevin ; K. Somasundram ; S. Blackstone ; S. Magee ; A.T. Paxton
A New Substrate Engineering Technique to Realize Silicon on Nothing (SON) Structure Utilizing Transformation of Sub-micron Trenches to Empty Space in Silicon (ESS) by Surface Migration / Y. Tsunashima ; T. Sato ; I. Mizushima
Novel and Improved Characterization Techniques
Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy* / A.R. Peaker ; L. Dobaczewski ; O. Andersen ; L. Rubaldo ; I.D. Hawkins ; K. Bonde Nielsen ; J.H. Evans-Freeman
Surface-Separated Collection of Ionic Species for Ion-Chromatography Analysis on Silicon Wafers / K. Yanagi ; H. Shibata ; K. Nagai ; M. Watanabe
Photomagnetic Detection of Doping Inhomogeneities in Silicon Crystals Using SQUID Magnetometers / H. Riemann ; J. Beyer ; Th. Schurig
The Measurement of Nitrogen in Silicon Substrates by SIMS / R.S. Hockett ; D.B. Sams
Laser Spectroscopy Methods for Nondestructive Analysis of Polycrystalline Silicon Thin Films and Silicon Surfaces / D. Milovzorov ; N. Chigarev
Impact of the Purity of Silicon on the Evolution of Ion Beam Generated Defects: From Research to Technology* / V. Privitera
Microscopic Characterization of Electrochemical Properties of Silicon Wafer Surfaces* / T. Homma ; J. Tsukano ; T. Osaka
Use of Diode Diagnostics for Silicon Wafer Quality Characterization: Effect of COP on PN Junction Leakage* / H. Kubota ; H. Nagano ; J. Sugamoto ; H. Matsushita ; M. Momose ; S. Nitta ; S. Samata ; N. Tsuchiya
Crystal Defect Information Obtained by Multiple Wafer Recleaning / L. Mule'Stagno ; S. Keltner ; R. Yalamanchili ; M. Kulkarni ; J. Libbert ; M. Banan
Resonance Ultrasonic Diagnostics of As-Grown and Process-Induced Defects in Cz Silicon / A. Belyaev ; I. Tarasov ; S. Ostapenko ; S. Koveshnikov ; V.A. Kochelap ; A.E. Beyaev
Deposition Mechanism of Trace Metals on Silicon Wafer Surfaces in Ultra Pure Water
A Study of "twin" [100] Square Hillock Silicon Crystalline Defects on Silicon Substrate in Wafer Fabrication Using 155 Wright Etch / H. Younan
Authors Index
Subject Index
Preface
High Purity Silicon Fabrication Techniques
Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf
6.

図書

図書
editors, R. Singh ... [et al.] ; [sponsord by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 226 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-7
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7.

図書

図書
editors, P.C. Trulove ... [et al.]
出版情報: Pennington, N.J. : The Electrochemical Society, c2000  xiv, 758 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-41
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8.

図書

図書
Electrochemical Society. Meeting ; Electrochemical Society
出版情報: [S.l.] : Electrochemical Society, c1985  xxix, 786 p. ; 26 cm
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9.

図書

図書
editors P.Y. Hou ... [et al.] ; High Temperature Materials Division, Corrosion Division [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, c1998  x, 614 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-9
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10.

図書

図書
editors, Karl M. Kadish, Rodney S. Ruoff ; [sponsored by] Fullerenes Group [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1998  xix, 1362 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-8
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