| Preface |
| Materials Research Society Symposium Proceedings |
| Advanced Materials and Structures |
| Stacked Metal Layers as Gates for MOSFET Threshold Voltage Control / Wei Gao ; John F. Conley ; Yoshi Ono |
| Evolution of SOI MOSFETs: From Single Gate to Multiple Gates / Jean-Pierre Colinge |
| A Technique for Source/Drain Elevation Using Implantation Mediated Selective Etching / M.Q. Huda ; K. Sakamoto |
| Study Using Elements from Group IIA as Barriers for Dopant Penetration Into Gate Dielectrics and Getters for Metallic Ion Contamination / Vladimir Zubkov ; Grace Sun ; Sheldon Aronowitz ; Margaret A. Gabriel |
| Search for New High-k Dielectrics by Combinatorial Chemical Vapor Deposition / Bin Xia ; Ryan Smith ; Fang Chen ; Stephen A. Campbell ; Wayne L. Gladfelter |
| High-k Dielectrics |
| Impact of Gate Process Technology on EOT of HfO[subscript 2] gate Dielectric / Daewon Ha ; Qiang Lu ; Hideki Takeuchi ; Tsu-Jae King ; Katsunori Onishi ; Young-Hee Kim ; Jack C. Lee |
| High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies / Matty Caymax ; H. Bender ; B. Brijs ; T. Conard ; S. De Gendt ; A. Delabie ; M. Heyns ; B. Onsia ; L. Ragnarsson ; O. Richard ; W. Vandervorst ; S. Van Elshocht ; C. Zhao ; J.W. Maes ; L. Date ; D. Pique ; E. Young ; W. Tsai ; Y. Shimamoto |
| Scalability of MOCVD-Deposited Hafnium Oxide / R. Carter ; M. Caymax ; M. Claes ; V. Kaushik ; A. Kerber ; J. Kluth ; G. Lujan ; J. Petry ; E. Rohr ; M.M. Heyns |
| Physical-Chemical Evolution of Hf-Aluminates Upon Thermal Treatments / B. Crivelli ; M. Alessandri ; S. Alberici ; D. Brazzelli ; A.C. Elbaz ; S. Frabboni ; G. Ghidini ; G. Ottaviani ; G. Pavia ; C. Wiemer |
| Advanced Gate Stack Materials |
| A New Parameter Predicating G[subscript m] for Ultra Thin Nitrided Gate Oxide / Mitsuaki Hori ; Naoyoshi Tamura ; Masataka Kase ; Hiroko Sakuma ; Hiroyuki Ohota ; Mayumi Shigeno ; Yuuzi Kataoka |
| Kinetics of Charge Generation During Formation of Hf and Zr Silicate Dielectrics / Theodosia Gougousi ; M. Jason Kelly ; Gregory N. Parsons |
| Limiting Native Oxide Regrowth for High-k Gate Dielectrics / K. Choi ; H. Harris ; S. Gangopadhyay ; H. Temkin |
| Thin HfO[subscript 2] Films Deposited via Alternating Pulses of Hf(NO[subscript 3])[subscript 4] and HfCl[subscript 4] / J.F. Conley Jr. ; Y. Ono ; R. Solanki ; D.J. Tweet |
| Atomic Layer Deposition of Hafnium Oxide Thin Films From Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone / Xinye Liu ; Sasangan Ramanathan ; Thomas E. Seidel |
| Evaluation of Tetrakis(diethylamino)Hafnium Precursor in the Formation of Hafnium Oxide Films Using Atomic Layer Deposition / Ronald Inman ; Anand Deshpande ; Gregory Jursich |
| Flat-Band Voltage Study of Atomic-Layer-Deposited Aluminum-Oxide Subjected to Spike Thermal Annealing / V.R. Mehta ; A.T. Fiory ; N.M. Ravindra ; M.Y. Ho ; G.D. Wilk ; T.W. Sorsch |
| LS-MOCVD of BSTO Thin Films Using Novel Ba and Sr Precursors / Hyun Goo Kwon ; Youngwoo Oh ; Jung Woo Park ; Young Kuk Lee ; Chang Gyoun Kim ; Yunsoo Kim |
| The Pr[subscript 2]O[subscript 3]/Si(001) Interface: A Mixed Si-Pr Oxide / Dieter Schmeisser ; Jarek Dabrowski ; Hans-Joachim Mussig |
| Low Temperature Si[subscript 0.85]Ge[subscript 0.15] Oxynitridation in Wet-Nitric Oxide Ambient / Anindya Dasgupta ; Christos G. Takoudis |
| Heterogeneous Integration and Strained Si Technologies |
| Relaxation of SiGe Films for the Fabrication of Strained Si Devices / J.S. Maa ; J.J. Lee ; S.T. Hsu ; K. Fujii ; T. Naka ; T. Ueda ; T. Baba ; N. Awaya ; K. Sakiyama |
| Free Standing Silicon as a Compliant Substrate for SiGe / G.M. Cohen ; P.M. Mooney ; J.O. Chu |
| Relaxed SiGe Layers With High Ge Content by Compliant Substrates / H. Yin ; R.L. Peterson ; K.D. Hobart ; S.R. Shieh ; T.S. Duffy ; J.C. Sturm |
| Hybrid Valence Bands in Strained-Layer Heterostructures Grown on Relaxed SiGe Virtual Substrates / Minjoo L. Lee ; Eugene A. Fitzgerald |
| Ultra-Shallow Junction Technology |
| B Diffusion in Low Energy B/BF[subscript 2] Implants With Pre-Amorphization of Different Species / Hong-Jyh Li ; Todd Rhoad ; Peter Zeitzoff ; Robin Tichy ; Larry Larson ; Sanjay Banerjee |
| Segregation and Diffusion of Sb Compared to As for Ultra-Shallow Implantation Into Silicon / D. Kruger ; P. Zaumseil ; V. Melnik ; R. Kurps ; P. Formanek ; D. Bolze |
| Atomistic Simulations of Effect of Coulombic Interactions on Carrier Fluctuations in Doped Silicon / Zudian Qin ; Scott T. Dunham |
| Dopant Diffusion Simulation in Thin-SOI / Jonathon Ross ; Jeff Gelpey ; Ben Stotts ; Heather Galloway |
| Theory and Simulation of Dopant Diffusion in SiGe / Chun-Li Liu ; Marius Orlowski ; Aaron Thean ; Alex Barr ; Ted White ; Bich-Yen Nguyen ; Hernan Rueda ; Xiang-Yang Liu |
| Strained Si and Source/Drain Technology |
| Short-Period (Si[subscript 14]/Si[subscript 0.75]Ge[subscript 0.25])[subscript 20] Superlattices for the Growth of High-Quality Si[subscript 0.75]Ge[subscript 0.25] Alloy Layers / M.M. Rahman ; T. Tambo ; C. Tatsuyama |
| Physics-Based Diffusion Simulations for Preamorphized Ultra-Shallow Junctions / N.E.B. Cowern ; B. Colombeau ; E. Lampin ; F. Cristiano ; A. Claverie ; Y. Lamrani ; R. Duffy ; V. Venezia ; A. Heringa ; C.C. Wang ; C. Zechner |
| Indium in Silicon: A Study on Diffusion and Electrical Activation / S. Scalese ; A. La Magna ; G. Mannino ; V. Privitera ; M. Bersani ; D. Giubertoni ; S. Solmi ; P. Pichler |
| Investigation and Modeling of Fluorine Co-Implantation Effects on Dopant Redistribution / M. Diebel ; S. Chakravarthi ; S.T. Dunham ; C.F. Machala ; S. Ekbote ; A. Jain |
| Diffusion of Boron in Germanium and Si[subscript 1-x]Ge[subscript x] (x [right than sign]50%) Alloys / Suresh Uppal ; A.F.W. Willoughby ; J.M. Bonar ; R.J.H. Morris ; M. Bollani |
| Boron Segregation and Out-Diffusion in Single-Crystal Si[subscript 1-y]C[subscript y] / E.J. Stewart |
| Process Optimization for Multiple-Pulses Laser Annealing for Boron Implanted Silicon with Germanium Pre-Amorphization / Debora Poon ; Byung Jin Cho ; Yong Feng Lu ; Leng Seow Tan ; Mousumi Bhat ; Alex See |
| Formation of NiSi-Silicided p[superscript +]n Shallow Junctions Using Implant Through Silicide and Low Temperature Furnace Annealing / Chao-Chun Wang ; Chiao-Ju Lin ; Mao-Chieh Chen |
| Laser Annealing and Silicide Processes |
| Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si / G. Fortunato ; L. Mariucci ; S. Whelan |
| Experiment and Modelization Results on Laser Thermal Processing for Ultra-Shallow Junction Formation: Influence of Laser Pulse Duration / J. Venturini ; M. Hernandez ; D. Zahorski ; G. Kerrien ; T. Sarnet ; D. Debarre ; J. Boulmer ; C. Laviron ; M.-N. Semeria ; D. Camel ; J.-L. Santailler |
| A Comparison of Spike, Flash, SPER and Laser Annealing for 45 nm CMOS / R. Lindsay ; B. Pawlak ; J. Kittl ; K. Henson ; C. Torregiani ; S. Giangrandi ; R. Surdeanu ; A. Mayur ; J. Ross ; S. McCoy ; J. Gelpey ; K. Elliott ; X. Pages ; A. Satta ; A. Lauwers ; P. Stolk ; K. Maex |
| Silicides for 65 nm CMOS and Beyond / Jorge A. Kittl ; Anne Lauwers ; Oxana Chamirian ; Mark Van Dal ; Amal Akheyar ; Olivier Richard ; Judit G. Lisoni ; Muriel De Potter ; Richard Lindsay ; Karen Maex |
| Low Resistivity Nickel Germanosilicide Contacts to Ultra-Shallow Junctions Formed by the Selective Si[subscript 1-x]Ge[subscript x] Technology for Nanoscale CMOS / Jing Liu ; Hongxiang Mo ; Mehmet C. Ozturk |
| NiSi Formation in the Ni(Ti)/SiO[subscript 2]/Si System / R.T.P. Lee ; D.Z. Chi ; S.J. Chua |
| Performance of Pt-Based Low Schottky Barrier Silicide Contacts on Weakly Doped Silicon / Guilhem Larrieu ; Emmanuel Dubois ; Xavier Wallart |
| Low Schottky Barrier on N-Type Si for N-Channel Schottky Source/Drain MOSFETs / Meng Tao ; Darshak Udeshi ; Shruddha Agarwal ; Nasir Basit ; Eduardo Maldonado ; Wiley P. Kirk |
| Author Index |
| Subject Index |
| Preface |
| Materials Research Society Symposium Proceedings |
| Advanced Materials and Structures |
図書
