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1.

図書

図書
Ben G. Streetman and Sanjay Banerjee
出版情報: Upper Saddle River, N.J. : Prentice Hall, c2000  xviii, 558 p. ; 25 cm
シリーズ名: Prentice-Hall series in solid state physical electronics
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目次情報: 続きを見る
Crystal Properties and Growth of Semiconductors / 1:
Atoms and Electrons / 2:
Energy Bands and Charge Carriers in Semiconductors / 3:
Excess Carriers in Semiconductors / 4:
Junctions / 5:
Field-Effect Transistors / 6:
Bipolar Junction Transistors / 7:
Optoelectronic Devices / 8:
Integrated Circuits / 9:
Negative Conductance Microwave Devices / 10:
Power Devices / 11:
Definitions of Commonly Used Symbols / Appendix I:
Physical Constants and Conversion Factors / Appendix II:
Properties of Semiconductor Materials / Appendix III:
Derivation of the Density of States in the Conduction Band / Appendix IV:
Derivation of Fermi-Dirac Statistics / Appendix V:
Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature / Appendix VI:
Solid Solubilities of Impurities in Si / Appendix VII:
Diffusivities of Dopants in Si and SiO2 / Appendix VIII:
Projected Range and Straggle as a Function of Implant Energy in Si, SiO2 and GaAs / Appendix IX:
Index
Crystal Properties and Growth of Semiconductors / 1:
Atoms and Electrons / 2:
Energy Bands and Charge Carriers in Semiconductors / 3:
2.

図書

図書
Ben G. Streetman[著]
出版情報: 東京 : 東海大学出版会, 1991.9  3冊 ; 21cm
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3.

図書

図書
[by] Ben G. Streetman
出版情報: Englewood Cliffs, N.J. : Prentice-Hall, [1972]  xv, 463 p ; 24 cm
シリーズ名: Prentice-Hall series in solid state physical electronics
Prentice-Hall electrical engineering series
所蔵情報: loading…
目次情報: 続きを見る
Crystal Properties and Growth of Semiconductors / 1:
Atoms and Electrons / 2:
Energy Bands and Charge Carriers in Semiconductors / 3:
Excess Carriers in Semiconductors / 4:
Junctions / 5:
Field-Effect Transistors / 6:
Bipolar Junction Transistors / 7:
Optoelectronic Devices / 8:
Integrated Circuits / 9:
Negative Conductance Microwave Devices / 10:
Power Devices / 11:
Definitions of Commonly Used Symbols / Appendix I:
Physical Constants and Conversion Factors / Appendix II:
Properties of Semiconductor Materials / Appendix III:
Derivation of the Density of States in the Conduction Band / Appendix IV:
Derivation of Fermi-Dirac Statistics / Appendix V:
Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature / Appendix VI:
Solid Solubilities of Impurities in Si / Appendix VII:
Diffusivities of Dopants in Si and SiO2 / Appendix VIII:
Projected Range and Straggle as a Function of Implant Energy in Si, SiO2 and GaAs / Appendix IX:
Index
Crystal Properties and Growth of Semiconductors / 1:
Atoms and Electrons / 2:
Energy Bands and Charge Carriers in Semiconductors / 3:
4.

図書

図書
Ben G.Streetman[著] ; 菊池誠監訳 ; 飯田昌盛, 御子柴宣夫訳
出版情報: 東京 : 東海大学出版会, 1991.9  xii,144p ; 21cm
シリーズ名: ストリートマン半導体電子デバイス / Ben G. Streetman[著] ; 3
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5.

図書

図書
Ben G. Streetman[著] ; 菊池誠監訳 ; 大越正敏, 貝田翔二, 中下俊夫訳
出版情報: 東京 : 東海大学出版会, 1991.9  xii,163p ; 21cm
シリーズ名: ストリートマン半導体電子デバイス / Ben G. Streetman[著] ; 1
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6.

図書

図書
Ben G.Streetman[著] ; 菊池誠監訳 ; 大串秀世, 黒須楯生, 松本和彦訳
出版情報: 東京 : 東海大学出版会, 1991.9  xiii, 255p ; 21cm
シリーズ名: ストリートマン半導体電子デバイス / Ben G. Streetman[著] ; 2
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