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1.

図書

図書
edited by Yasuhiko Arakawa ... [et al.]
出版情報: Bristol : Institute of Physics Publishing, c2002  xxxi, 855 p. ; 25 cm
シリーズ名: Institute of Physics conference series ; no. 170
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目次情報: 続きを見る
International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award
Quantum Devices Award
Young Scientist Award
Preface
Sponsors
Symposium Committees
Acknowledgements
Electronic Devices / Chapter 1:
Progress in nitride-based microwave HEMTs / L F Eastman ; V Tilak ; J Smart ; B Green ; A Vertiatchikh ; N Weimann ; O Ambacher ; E Chumbes ; H Kim ; T Prunty ; J H Hwang ; W J Schaff ; B K Ridley ; J R Shealy ; V Kaper
Status of AlGaN/GaN HEMTs for microwave and power switching applications / U K Mishra ; N-Q Zhang ; Y-F Wu
High speed InP-based heterojunction bipolar transistors / M Rodwell ; M Urteaga ; S Lee ; D Scott ; Y-M Kim ; M Dahlstrom ; Y Wei ; T Mathew ; S Long ; A Gossard
High performance recessed gate AlGaN/GaN HEMTs / J S Moon ; W-S Wong ; M Micovic ; M Hu ; J Duvall ; M Antcliffe ; T Hussain ; P Hashimoto ; L McCray
Npn InGaN/GaN double heterojunction bipolar transistors with high common-emitter current gains / T Makimoto ; K Kumakura ; N Kobayashi
High field-emission current density from heavily Si-doped AlN and Al[subscript x]Ga[subscript 1 - x]N / M Kasu
Emitter capacitance cancellation in ultrahigh-speed InP/GaAsSb/InP DHBTs with a staggerred ("type II") band lineup / C R Bolognesi ; M W Dvorak ; S P Watkins ; T W MacElwee
Device technology for high-yield and high-performance InP/InGaAs DHBTs / K Kurishima ; M Ida ; N Watanabe ; T Enoki
A novel resonant tunneling logic gate capable of 100 fs/gate class operation / K Maezawa ; T Tanaka ; T Mizutani
High peak current density and low peak voltage strained In[subscript 0.9-0.8]Ga[subscript 0.1-0.2]As/AlAs RTD grown by metal organic chemical vapor deposition / H Matsuzaki ; J Osaka ; H Sugiyama ; T Kobayashi
DC, RF and stability properties of high current density InGaAs tunnel diodes / M R Deshpande ; S Ageno ; V Nair ; N El-Zein ; G Kramer ; M Kyler ; S Allen ; O Kuboi ; J Lewis ; H Goronkin
On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky barrier diodes / P Jayavel ; K Santhakumar ; M Ogura
Attractive potential around a buried metallic gate in a Schottky collector hot electron transistor / L-E Wernersson ; R Yamamoto ; Y Miyamoto ; E Lind ; I Pietzonka ; W Seifert ; L Samuelson ; K Furuya
Investigation of DLTS and low-frequency noise behaviour of In[subscript 0.49]Ga[subscript 0.51]P/In[subscript 0.22]Ga[subscript 0.78]As p-HEMT grown by using a compound source MBE / J-H Kim ; S-J Jo ; J-W Kim ; P-W Yu ; J-I Song
Sub 0.1 [mu]m asymmetric [Gamma]-gate PHEMT process using electron beam lithography / S C Kim ; B O Lim ; H S Kim ; S D Lee ; B H Lee ; W S Sul ; D-H Shin ; J K Rhee
0.12 [mu]m gate length In[subscript 0.52]Al[subscript 0.48]As/In[subscript 0.53]Ga[subscript 0.47]As HEMTs on transferred substrate / S Bollaert ; X Wallart ; S Lepilliet ; A Cappy ; E Jalaguier ; S Pocas ; B Aspar ; J Mateos
Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors with high Al compositions / N Maeda ; K Tsubaki ; T Saitoh
Low-frequency noise characteristics of AlGaN/GaN HEMT / H Makihara ; M Akita ; Y Ohno ; S Kishimoto
Electroluminescence in AlGaN/GaN HEMTs / T Nakao
A depletion-mode InP MOSFET with a liquid phase oxidized InGaAs gate / S-J Kang ; J-C Han ; H-J Song ; S-W Park
Characteristics of depletion-mode In[subscript 0.53]Ga[subscript 0.47]As MOSFETs
Depletion and accumulation mode operation of GaAs MISFETs with nm-thin gate insulating layers formed by UV & ozone process / Y Kita ; Y Ohta ; N C Paul ; K liyama ; S Takamiya
Image rejection mixer For WLAN application / W-C Wu ; H-H Lin
Multiband quantum transport with self-consistent scattering calculation based on Green's function method / M Ogawa ; K Okita ; T Miyoshi
Optical Devices / Chapter 2:
Blue and violet vertical cavity light emitters and multielement arrays / Y He ; I Ozden ; M Diagne ; H Zhou ; E Makarona ; A V Nurmikko ; J Han ; T Takeuchi ; M Krames
High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide laser diode operating out to 1.4[mu]m / W Ha ; V Gambin ; M Wistey ; S Kim ; J Harris
Low-noise quantum well infrared photodetectors for high-resolution thermal imaging / H Schneider ; M Walther ; J Fleissner ; R Rehm ; E Diwo ; K Schwarz ; P Koidl ; G Weimann ; J Ziegler ; R Breiter ; W Cabanski
Super high output power of 4.2 W in AlGaInN-based blue-violet laser diode array / S Goto ; T Tojyo ; S Ansai ; Y Yabuki ; T Hino ; H Yamanaka ; Y Moriya ; Y Ito ; Y Hamaguchi ; S Uchida ; M Ikeda
Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device / J Bae ; B H Park ; J Y Kim ; O'D Kwon
High efficiency AlGaInP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength / A Knigge ; M Zorn ; H Wenzel ; M Weyers ; G Trankle
340 nm-band bright UV-LEDs using quaternary InAlGaN active region / H Hirayama ; A Kinoshita ; M Ainoya ; T Yamabi ; T Yamanaka ; A Hirata ; Y Aoyagi
1.4 [mu]m GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy / Y Ikenaga ; T Miyamoto ; S Makino ; T Kageyama ; M Arai ; F Koyama ; K Iga
Single fundamental mode laser operation in microlensed vertical cavity surface emitting lasers / S M Hwang ; S H Nam ; S-H Park ; Y Park ; H Jeon ; J C Woo
Semiconductor Raman amplifiers for time gate demodulation in terabit optical communication system / T Tanabe ; K Suto ; T Saito ; T Kimura ; Y Oyama ; J Nishizawa
Generation of mid-infrared radiation in quantum well laser due to GaAs lattice nonlinearity / A A Afonenko ; V Ya Aleshkin ; N B Zvonkov
Room temperature self-excited electronic Raman scattering by intersubband transitions in compressively strained InGaAs quantum-well lasers / W Susaki ; H Yaku ; X Gao ; K Nishikawa
Characteristics of AlGaN quantum well light emitting diodes under large current operation / T Nishida
Orange GaInN/GaN multi-quantum-well light-emitting diodes using a post-annealing technique / H Ishikawa ; T Egawa ; T Jimbo
High-efficiency monochromatic and white InGaN flip-chip dice / J C Bhat ; A Kim ; D Collins ; R Fletcher ; R Khare ; S Rudaz
Magnetic Materials / Chapter 3:
MOVPE growth experiments and magnetic characterization of (GaMn) As layer structures / M Lampalzer ; K Volz ; W Treutmann ; S Nau ; T Torunski ; K Megges ; J Lorberth ; W Stolz
Growth and light-induced ferromagnetic properties of InMnAsSb/InSb heterostructure / Y K Zhou ; M Kanamura ; R Asano ; H Asahi
Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures / K H Ploog ; M Ramsteiner ; H-P Schonherr ; H J Zhu
Structural and magnetic properties of ferromagnetic MnAs films on GaAs(001) / L Daweritz ; F Schippan ; M Kastner ; B Jenichen ; V M Kaganer ; B Dennis ; K-U Neumann ; K R A Ziebeck
Spin injection with Fe/InAs hybrid structure / H Ohno ; K Yoh ; Y Katano ; K Sueoka ; K Musaka
Novel Systems / Chapter 4:
UHV-CVD growth of Si[subscript 1 - x - y]Ge[subscript x]C[subscript y] for device applications / M Kubo ; Y Kanzawa ; T Takagi ; K Yuki ; K Toyoda ; K Nozawa ; A Asai ; Y Hara ; T Ohnishi
Vertical and lateral heterogeneous integration using direct wafer bonding / J Geske ; V Jayaraman ; Y L Okuno ; J E Bowers
Device characteristics of vertical field effect transistors with ultra-short InGaAs/GaAs channels / F Ertl ; R A Deutschmann ; D Schuh ; M Bichler ; G Abstreiter
Band anticrossing in highly mismatched compound semiconductor alloys / W Walukiewicz ; K M Yu ; J Wu ; J W Ager ; E E Haller ; I Miotkowski ; A K Ramdas ; C-H Su
Phase stability of CdO on zincblende layers grown on GaAs substrates by metalorganic molecular-beam epitaxy / A B M A Ashrafi ; I Suemune ; H Kumano ; Y W Ok ; T-Y Seong
Temporary and permanent wafer bonding for reliable backside processing of compound semiconductor wafers / V Dragoi ; T Glinsner ; P Lindner ; C Schaefer ; T Kazuta ; D Hornik ; M Reiche
Three-dimensional structuring using self-rolling of strained InGaAs/GaAs films / V Ya Prinz ; A B Vorob'ev ; V A Seleznev
Selective MBE growth of GaAs/AlGaAs nanowires on patterned GaAs (001) substrates and its application to hexagonal nanowire network formation / T Sato ; I Tamai ; C Jiang ; H Hasegawa
A novel surface patterning using FIB and in-situ etching / Y Asaoka ; T Arai ; N Sano ; T Kaneko
Novel fabrication method of semiconductor nano-electromechanical structures using controlled surface step distribution / H Yamaguchi ; Y Hirayama
Quantum Transport / Chapter 5:
Transport properties in back-gated InAs/GaSb heterostructures / K Suzuki ; S Miyashita
Conductance fluctuations in quantum wires formed at spin-splitting narrow gap heterojunctions / S Yamada ; Y Sato ; T Kita ; S Gozu
Magneto-transport properties of electrons in quantum wells with quasi-periodic interface corrugation / T Noda ; H Sakaki
Numerically evaluated exact properties of the conductance of regular and chaotic quantum cavities / Y Takagaki
A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes / M Suhara ; S Ooki ; T Okumura
A quasi-1-dimensional electron wave interference transistor with recess-etched grating structure fabricated by electron beam lithography / T Murata ; S Mizuno
Scattering processes of 2D electrons by charged quantum dots in n-AlGaAs/GaAs heterojunction channels with 10nm-scale embedded InGaAs islands / T Kawazu
Negative differential conductance of In[subscript 0.4]Ga[subscript 0.6]As/GaAs(311)B laterally coupled quantum dots / H-Z Song ; Y Okada ; K Akahane ; H Z Xu ; M Kawabe
Optical Characterization / Chapter 6:
Nano seismology: acoutsic shock wave generation and terahertz emission from InGaN/GaN structures / J Y Sohn ; J S Yahng ; D J Park ; D S Kim ; E Oh ; G D Sanders ; C J Stanton
Time-resolved THz spectroscopy of miniband transport in biased GaAs/AlGaAs superlattices / Y Shimada ; K Hirakawa
Ultrafast and large nonlinear optical response due to spatial structure of internal electric field in semiconductor thin film / T Isu ; K Akiyama ; N Tomita ; T Nishimura ; Y Nomura ; H Ishihara ; K Cho
Modulation of PL recombination processes in N doped GaAs/Al[subscript 0.33]Ga[subscript 0.67]As SQW by electric field / K Onomitsu ; A Kawaharazuka ; T Okabe ; H Saito ; Y Horikoshi
Localized and resonant states of shallow acceptors in Ge/Ge[subscript 1 - x]Si[subscript x] multiple-quantum well heterostructures / B A Andreev ; V I Gavrilenko ; I V Erofeeva ; D V Kozlov ; O A Kuznetsov
Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy / K Hayashida ; M Nishio ; S Wang ; Y Chang ; Q Guo ; H Ogawa
Femto-second pump-probe study of the nonlinear transmission in an asymmetric triple quantum well structure / K Mizutani ; M Yamaguchi ; N Sawaki
Spatiotemporal imaging of nonequilibrium current during impact ionization avalanche in n-GaAs / K Aoki
Description of eigen energy in deep quantum wells by narrow-gap band theory: InGaAs/InAlAs and InGaAs/AlAsSb system under Landau quantization / N Kotera ; K Shibata ; T Kawano ; T Sakai ; T Ikaida ; N Miura ; N Georgiev ; T Mozume
Ionic screening effects on resonant light scattering by intersubband excitations in n-type AlGaAs/GaAs heterojunctions / S M Maung ; S Katayama ; M Koyano
Determination of the critical layer thickness of GaAs/InGaAs strained quantum wells by scanning near-field optical spectroscopy / Y Ohizumi ; T Tsuruoka ; S Ushioda
Persistent photoconductivity under atmospheric pressure in uniformly doped n-GaAs prepared by intermittent injection of TMG and AsH[subscript 3] / F Matsumoto ; H Watanabe
Self-consistent computer analysis of cathodoluminescence in-depth spectra for compound semiconductor heterostructures / F Ishikawa
Ultra fine analysis of linear response of confined excitons in GaAs nano-layers / K Yoshimoto
Anomalous temperature dependence of the photoluminescence properties in GaAs triple quantum wells with growth islands / A Satake ; K Hayata ; N Shiraishi ; K Fujiwara ; L Schrottke ; R Hey ; H T Grahn
Optical studies of surface quantum well structures with intermediate-layer thicknesses / M Sakai ; J Hagino ; H Tsuruta
Quantum Nanostructures / Chapter 7:
Quantum dots: lasers and amplifiers / D Bimberg
Single optical mode coupling of single quantum dot spontaneous emission / G S Solomon ; M Pelton ; Y Yamamoto
Single photon emission from few particle states in InAs quantum dots / R M Thompson ; R M Stevenson ; A J Shields ; I Farrer ; C J Lobo ; D A Ritchie ; M L Leadbeater ; M Pepper
Anti-Stokes photoluminescence and phonon broadening in self-assembled InAs/GaAs quantum dots / C Kammerer ; G Cassabois ; C Voisin ; C Delalande ; Ph Roussignol ; J-M Gerard
Anomalous quantum confined Stark effects in vertically coupled InAs/GaAs self-assembled quantum dots / W Sheng ; J-P Leburton
Biexciton formation in CdTe/Cd[subscript 0.74]Mg[subscript 0.26]Te quantum wires / S Nagahara ; O Wada ; L Marsal ; H Mariette
Stranski-Krastanov growth of (In,Ga)As quantum dots by controlling the wetting layer / M Nakahama ; K Yamashita
Size ordering effects of InAs quantum dots during a GaAs capping growth / Y Saito ; R Ohtsubo ; K Yamaguchi
Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic In[subscript x]Al[subscript 1 - x]As (0.33 [less than or equal] x [less than or equal] 0.52) buffer layers / D Vignaud ; Y Cordier ; P Miska ; D Ferre
Carrier dynamics in spatially ordered InAs quantum dots / S Marcinkevicius ; J Siegert ; R Leon ; S Chaparro ; S R Johnson ; C Navarro ; X Jin ; Y H Zhang
Electro-optical effects in single and multi-stacked dots / A Vasanelli ; R Ferreira ; R Cingolani ; G Bastard
Quantum-confined Stark effect in InGaN pyramidal dots induced by the piezoelectric field / Y Arakawa
Transport through InGaAs/GaAs(311)B quantum dots studied by conductive scanning probes / M Miyagi ; H Shigekawa
Low temperature conductance fluctuations in coupled open dot systems / Y Ochiai ; N Aoki ; D Oonishi ; Y Iwase ; K Ishibashi
Formation mechanism of ZnSe nanocrystals emitting whitish blue in water / N Murase ; M Gao ; T Yazawa ; J Feldmann
Strong band-edge emission from surface modified CdS quantum dots prepared by a colloidal method / D Kim ; N Teratani ; K Mizoguchi ; M Nakayama
Modulation dynamics of red-emitting quantum dot lasers / T Riedl ; J Porsche ; F Scholz ; A Hangleiter
Novel Si/Ge quantum dot mid-infrared photodetector structures with in-plane transport / D Bougeard ; K Brunner
Artificial nanostructure devices of InAs produced by AFM oxidation / S Sasa ; A Nakashima ; M Inoue
UV photoluminescence spectrum of GaN self-assembled quantum dots grown by MOCVD / M Miyamura ; K Tachibana
Material Growth and Characterization / Chapter 8:
P-type conductivity in Si doped Al[subscript x]Ga[subscript 1 - x]As for 0 [less than or equal] x [less than or equal] 1 grown by molecular beam epitaxy on GaAs(113)A surfaces / S Tibebu Kassa
Application of the GW method to the semiconducting materials / M Oshikiri ; F Aryasetiawan
Elastic properties and pressure-induced phase transitions of BNs / H Fujita ; K Shirai ; H K Yoshida
Annealing effect of TlInGaAs/InP DH and MQW structures / A Mizobata ; H J Lee ; O Maeda ; K Konishi
Effect of annealing on the optical parameters in pulsed laser deposited vanadium pentoxide thin films / R T Rajendra Kumar ; B Karunagaran ; D Mangalaraj ; Sa K Narayandass ; P Manoravi ; M Joseph
Molecular orbital study of electronic states by discrete variational X[alpha] method: influences of chalcogen atoms / Y Yamamura ; S Miyamura ; T Inokuma ; K Iiyama
Self-limiting growth of InP by intermittent injection of TMIn/TEIn and TBP in ultra high vacuum and its in-situ monitoring by reflectance anistropy spectroscopy (RAS) / N Otsuka
Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics / S Bhunia ; T Kawamura ; Y Watanabe ; S Fujikawa ; K Uchida ; S Nozaki ; H Morisaki ; J Matsui ; Y Kagoshima ; Y Tsusaka
Study on mechanism of re-entrant RHEED oscillation observed during LT-MBE growth of GaAs / A Nagashima ; M Tazima ; J Yoshino
Silicon carbide delta-doped structures formed by "pulse doping" technique in the vertical hot wall type CVD system / K Takahashi ; T Yokogawa ; M Uchida ; O Kusumoto ; R Miyanaga ; M Kitabatake
Phosphorus and arsenic P-type doping of bulk ZnTe for LED application / S L Wang ; Q X Guo
Roles of the ZnO buffer layer to the properties of ZnO on Si substrates grown by metalorganic vapor phase epitaxy / S-W Kim ; K Ogata ; K Maejima ; S Fujita
Wide wavelength control of highly strained GaInAs/GaAs QWs on patterned substrate for multiwavelength VCSEL array / T Kondo ; N Nishiyama ; M Azuchi
Pseudo-three-dimensional photoelastic characterization of LEC-GaAs single crystal ingot / M Yamada ; T Chu
Optimization of GaAs/Si heteroepitaxy for solar cell application / J Takamori ; Y Shimizu ; T Ueda ; C Yamagishi
Material Growth and Characterization (Nitride) / Chapter 9:
Recent developments in selective area growth and epitaxial lateral overgrowth of III-nitrides / K Hiramatsu
Highly uniform characteristics of blue-violet lasers on a 3-inch o wafer / M Takeya ; T Asano ; S Ikeda ; S Kijima ; T Mizuno
Improvement in crystal quality of GaN films with quantum dots as buffer layers grown on sapphire substrates by molecular beam epitaxy / D Huang ; C W Litton ; M A Reshchikov ; F Yun ; T King ; A A Baski ; H Morkoc
Growth of high-quality GaN on metallic-ZrB[subscript 2] by metalorganic vapor phase epitaxy / Y Yukawa ; T Nakamura ; M Kosaki ; S Nitta ; S Kamiyama ; H Amano ; I Akasaki ; S Otani ; H Kinoshita
Characterization of GaNP grown by photo-assisted MOVPE / Y Itoh ; J Li ; H Ishii ; S Yoshida ; J Kikawa ; K Onabe ; Y Shiraki
Optically-biased photoconductivity spectrum measurements of cubic GaN/GaAs(001) heterostructures / R Katayama ; M Kobayakawa ; A Nagayama
4f configurations of Eu and Tb ions in GaN / T Maruyama ; H Bang ; S Morishima ; K Akimoto ; Y Nanishi
Photoluminescence from polycrystalline GaN grown by MBE on metal substrates / A V Andrianov ; K Yamada ; H Tampo ; V Yu Nekrasov ; Z N Rodionova ; I S Zhuravlev ; N N Zinonev
Structural analysis of GaN layers on GaAs (111)B substrates grown by MOVPE / S Sanorpim ; E Takuma ; H Ichinose
Structural study on stacking faults in GaN/GaAs (001) heterostructures / H Sawada
FEM deformation analysis of air-bridged lateral epitaxial grown GaN films / A Ishibashi
Identification of homogenous and inhomogenous structures of NH[subscript 3] GS-MBE-grown GaN epilayers by ion-channeling studies / S Kurai ; T Saimei ; M Konishi ; S Kubo ; T Taguchi
Growth condition dependence of InN film a-axis directions on sapphire (0001) substrate / T Yamaguchi ; T Araki ; N Teraguchi ; A Suzuki
Characterization of GaN/AlN films with different polarities grown by molecular beam epitaxy on sapphire substrates / P Visconti ; J Jasinski ; Z Liliental-Weber
Thick cubic GaN grown on GaAs by three-step growth / H Tanaka ; A Nakadaira
High-quality GaN growth on AlN/sapphire templates by MOVPE / M Umeno ; T Shibata ; K Asai ; S Sumiya ; Y Kuraoka ; M Tanaka ; O Oda
Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111)Si substrate by selective MOVPE / T Kato ; Y Honda
New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth / Y Kida ; H Miyake ; Y Hori ; T Nagai
The Monte Carlo simulation of epitaxial growth of GaN(0001) with wurtzite structure / A Ishii ; M Tsukao ; O Tomiyama ; T Aisaka
Doping characteristics and structural defects in N/Ge co-implanted GaN / Y Nakano ; T Kachi
High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy / S Yamaguchi ; Y Iwamura ; S Mochizuki
Compositional and structural characterization of novel Al[subscript 1 - x]Si[subscript 1 - x]N ternary alloy / Y Taniyasu
MOVPE-growth and characterization of metastable (GaIn)(NAs)/GaAs heterostructures for 1.3 [mu]m lasers / A Ramakrishnan ; G Ebbinghaus
Evaluation of nanopipes in GaN films by localized avalanche breakdown / M Ohkubo
In-situ XPS and photoluminescence characterization of GaN surfaces grown by MBE on MOVPE GaN templates / S Anatathanasarn ; T Hashizume
Temperature dependence of photoluminescence intensity change due to below-gap excitation in GaN / N Kamata ; J M Zanardi Ocampo ; W Okamoto ; F Takahashi ; K Hoshino ; T Someya
Author Index
International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award
Quantum Devices Award
Young Scientist Award
2.

図書

図書
International Symposium on Compound Semiconductors
出版情報: Piscataway, NJ : Institnte of Electrical and Electronics Engineers, c2000  xx, 530 p. ; 24 cm
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3.

図書

図書
edited by Mike Melloch and Mark A. Reed
出版情報: Bristol ; Philadelphia : Institute of Physics Pub., c1998  xxvii, 666 p. ; 24 cm
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4.

図書

図書
sponsored by the IEEE Electronic Devices Society ; technically co-sponsored by the IEEE Microwave Theory and Techniques Society and the IEEE Solid State Circuits Society
出版情報: Piscataway, N.J. : IEEE Operations Center, c2005  x, 291 p. ; 28 cm
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5.

図書

図書
edited by H Sakaki, J-C Woo, N Yokoyama and Y Hirayama
出版情報: Bristol : Institute of Physics Pub., c1999  xxvi, 892 p. ; 24 cm
シリーズ名: Institute of Physics conference series ; no. 162
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6.

図書

図書
editor, S.N.G. Chu ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 390 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-21
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7.

図書

図書
edited by K H Ploog, G Tränkle and G Weimann
出版情報: Bristol : Institute of Physics Publishing, 2000  xxii, 537 p. ; 25 cm
シリーズ名: Institute of Physics conference series ; no. 166
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8.

図書

図書
editors, F. Ren ... [et al.] ; Electrochemical Society Electronics Division
出版情報: Pennington, NJ : Electrochemical Society, c1996  278 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 96-2
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9.

図書

図書
Roger J. Malik ... [et al.], chairs/editors ; sponsored and published by SPIE--the International Society for Optical Engineering
出版情報: Bellingham, Wash. : SPIE, c1992  ix, 238 p. ; 28 cm
シリーズ名: Proceedings / SPIE -- the International Society for Optical Engineering ; v. 1676
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10.

図書

図書
edited by F. Ren ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1995  xi, 510 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 95-21
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