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1.

図書

図書
edited by Peter Capper, Peter Rudolph
出版情報: Weinheim : Wiley-VCH, 2010  xxiv, 342 p. ; 25 cm
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General Aspects of Crystal Growth Technology
Thermodynamic modeling of crystal growth processes
Prediction of s-l interface shapes and oxygen concentration distributions for 300 mm silicon crystals in a magnetic field
Modeling of vapor-phase growth of SiC and AlN bulk crystals
Advanced technologies of crystal growth from melt using vibrational influence
Convection during bulk crystal growth: The good, the bad, and the ugly
Compound Semiconductors
Defect characterization and control in VCz GaAs crystals grown without B2O3 encapsulant
The growth of semiconductor crystals (Ge, GaAs) by the heater-magnet technology
Sublimation growth of bulk AlN crystals
Behaviour of dislocations during Liquid Phase Epitaxy of GaN and CVD epitaxy of SiC
Low temperature growth of ternary III-V semiconductor crystals from quaternary melts
CdHgTe growth technology using ACRT and LPE
Influence of a Pt cold finger in the thermal environments during the growth of CdZnTe by the vertical Bridgman method
Halides and Oxides
Growth, computer modeling, and optimization of sapphire, garnet, and oxide crystals
Advanced material development for inertial fusion energy
Ceramic lasers and ceramic-crystal lasers
LPE of magnetooptical garnet films: preparation, characterization, applications
Growth technology and laser properties of Yb-doped sesquioxides
Continuous growth of large alkali halides: physics and technology
Trends in scintillation crystals
Crystal Growth For Sustaining Energy
Silicon crystal growth for photovoltaics
Low cost semiconductor and solar silicon
Crystal Machining
New developments in multi-wire sawing
Crystal machining using atmospheric pressure plasma
General Aspects of Crystal Growth Technology
Thermodynamic modeling of crystal growth processes
Prediction of s-l interface shapes and oxygen concentration distributions for 300 mm silicon crystals in a magnetic field
2.

図書

図書
editor Victor I. Klimov
出版情報: Boca Raton, Fla. : CRC Press, c2010  xv, 469 p. ; 25 cm
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Preface to the Second Edition
Preface to the First Edition
Editor
Contributors
"Soft" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals / Jennifer A. Hollingsworth ; Victor I. KlimovChapter 1:
Electronic Structure in Semiconductor Nanocrystals: Optical Experiment / David J. NorrisChapter 2:
Fine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals / Alexander L. EfrosChapter 3:
Intraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots / Philippe Guyot-Sionnest ; Moonsub Shim ; Congjun WangChapter 4:
Multiexciton Phenomena in Semiconductor Nanocrystals / Chapter 5:
Optical Dynamics in Single Semiconductor Quantum Dots / Ken T. Shimizu ; Moungi G. BawendiChapter 6:
Electrical Properties of Semiconductor Nanocrystals / Neil C. GreenhamChapter 7:
Optical and Tunneling Spectroscopy of Semiconductor Nanocrystal Quantum Dots / Uri Banin ; Oded MilloChapter 8:
Quantum Dots and Quantum Dot Arrays: Synthesis, Optical Properties, Photogenerated Carrier Dynamics, Multiple Exciton Generation, and Applications to Solar Photon Conversion / Arthur J. Nozik ; Olga I. MicicChapter 9:
Potential and Limitations of Luminescent Quantum Dots in Biology / Hedi MattoussiChapter 10:
Colloidal Transition-Metal-Doped Quantum Dots / Remi Beaulac ; Stefan T. Ochsenbein ; Daniel R. GamelinChapter 11:
Index
Preface to the Second Edition
Preface to the First Edition
Editor
3.

図書

図書
edited by William R. Wilcox
出版情報: New York : Marcel Dekker, c1981  viii, 265 p. ; 23 cm
シリーズ名: Preparation and properties of solid state materials ; v. 6
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4.

図書

図書
E. Budevski, G. Staikov, W.J. Lorenz
出版情報: New York : VCH Publishers, 1996  xi, 410 p. ; 25 cm
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Fundamentals of Electrocrystallization of Metals
Crystalline Metal Surfaces
Underpotential Deposition of Metals - 2D Phases
Initial Stages of Bulk Phase Formation
Growth of Crystalline Faces
Me Deposit and Surface Structuring and Modification
Outlook
Fundamentals of Electrocrystallization of Metals
Crystalline Metal Surfaces
Underpotential Deposition of Metals - 2D Phases
5.

図書

東工大
目次DB

図書
東工大
目次DB
Kenichi Iga, Susumu Kinoshita
出版情報: Berlin ; Tokyo : Springer, c1996  x, 169 p. ; 24 cm
シリーズ名: Springer series in materials science ; v. 30
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1. Introduction 1
   1.1 Outline of Semiconductor Laser Theory 1
   1.2 Semiconductor Lasers in Opto-electronics 3
   1.3 Necessary Technology for Semiconductor Lasers 4
   1.4 Brief History of Semiconductor Lasers 5
   1.5 Typical Semiconductor Lasers 7
2. Materials for Semiconductor Lasers 8
   2.1 III-V Compound Semiconductors 8
   2.1.1 Band Structure of III-V Semiconductors 8
   2.1.2 Other Characteristics of III-V Compound Semiconductors 13
   2.2 Crystals for Visible to Near-Infrared-Wavelength Emission Semiconductor Lasers 15
   2.2.1 Importance of Visible to Near-Infrared-Wavelenth Laser Emission 15
   2.2.2 Crystal Materials for the Near-Infrared Region 15
   2.2.3 Crystal Materials for Visible Laser Emission 17
   2.3 Crystals for Semiconductor Lasers with 1-μm and Longer Emission Wavelengths 18
   2.3.1 Importance of the 1-μm Emission Wavelength 18
   2.3.2 Crystal Materials for the 1-μm Emission Wavelength 20
   2.3.3 Longer-Wavelength Materials 21
3. Basic Design of Semiconductor Lasers 22
   3.1 Double Heterostructures and Their Design 22
   3.1.1 Double Heterostructures 22
   3.1.2 Design of Double-Heterostructure Lasers 23
   3.1.3 Energy-Band Diagram of DH Lasers 24
   3.1.4 Optical Properties of DH Lasers 32
   a) Step-Index Planar Waveguide 32
   b) TE Modes 34
   c) TM Modes 37
   d) Mode-Confinement Factor 38
   3.1.5 Threshold Current of DH Lasers 40
4. Epitaxy of III-V Compound Semiconductors 43
   4.1 III-V Substrates for Semiconductor Lasers 43
   4.1.1 Necessity of Substrates 43
   4.1.2 Substrate Quality Requirements 43
   4.2 Bulk Growth Techniques 45
   4.3 Heteroepitaxial Techniques 45
   4.3.1 Liquid-Phase Epitaxy 45
   4.3.2 Vapor-Phase Epitaxy 47
   4.3.3 Metalo-Organic Chemical-Vapor Deposition 47
   4.3.4 Molecular Beam Epitaxy 48
   4.3.5 Chemical Beam Epitaxy 49
5. Liquid Phase Epitaxy and Growth Technology 51
   5.1 Outline of an LPE System 51
   5.2 Reactors 52
   5.2.1 Horizontal Reactor 52
   5.2.2 Vertical Reactor 56
   5.3 Loading Sub-System 57
   5.4 Pump and Exhaust Sub-System 58
   5.5 Gas-Flow Sub-System 59
   5.6 Heating Sub-System 60
   5.7 Maintenance 60
   5.7.1 Maintenance of a Graphite Boat 60
   5.7.2 Baking of the Reactor 60
   5.8 Liquid-Phase Epitaxy 61
   5.9 LPE Process 63
   5.9.1 GaA1As/GaAs System 63
   a) Determination of the Source-Material Quantity 63
   b) LPE Procedure 67
   5.9.2 GaInAsP/InP System 69
   5.9.3 Other Materials 77
   a) Visible-Light Semiconductor Lasers 80
   b) Longer-Wavelength (λ>2μm) Semiconductor Lasers 81
6. Vapor Phase and Beam Epitaxies 82
   6.1 Metal-Organic Chemical Vapor Deposition (MOCVD) 82
   6.1.1 MOCVD System 82
   6.1.2 Example of MOCVD Growth 84
   a) A Double-Heterostructure Wafer 84
   b) Semiconductor Multilayer Reflector 85
   6.1.3 Characterization 87
   a) Evaluation of the Nominal Threshold-Current Density 87
   b) Reflectivity of a Multilayer Bragg Reflector 88
   6.2 Molecular-Beam and Chemical-Beam Epitaxy 89
   6.2.1 Background 89
   6.2.2 Chemical Beam Epitaxial System 91
   6.2.3 Preparation for Growth 92
   6.2.4 GaAs and InP Growth 93
   6.2.5 GaxIn1-xAsyP1-y Growth 96
   6.2.6 Doping-Level Control 98
   6.2.7 Summary of CBE 99
7. Characterization of Laser Materials 101
   7.1 Evaluation of Laser Wafers 101
   7.2 Measurement of Lattice Mismatch 103
   7.3 Measurement of the Impurity Concentration 105
   7.3.1 Four-Point Probe Method 105
   7.3.2 Schottky Method 107
   7.3.3 Hall Measurement 108
   7.4 Photoluminescence 110
   7.5 Measurement of the Refractive Index 111
   7.6 Misfit Dislocation 111
8. Semiconductor-Laser Devices-Fabrication and Characteristics 112
   8.1 Fabrication of Fundamental Laser Devices 112
   8.1.1 Broad Contact Lasers 112
   8.1.2 Stripe-Geometry Lasers 113
   8.2 Current Injection and Contacts 114
   8.2.1 Current/Voltage Characteristics 114
   8.2.2 Current Injection 116
   8.3 Evaluation of the Threshold-Current Density 119
   8.4 Gain Bandwidth and Oscillation Spectra 119
   8.5 Output and Efficiency of Semiconductor Lasers 121
   8.6 Near-Field Pattern and Far-Field Pattern 122
   8.7 Temperature Characteristics 122
   8.8. Reliability 123
9. Mode-Control Techniques in Semiconductor Lasers 124
   9.1 Transverse-Mode Characteristics and the Single-Mode Condition 124
   9.1.1 Necessity of Transverse-Mode Stabilization 124
   9.1.2 Equivalent Refractive-Index Method 126
   9.1.3 Eigenvalue Equation of a Guided Mode 127
   9.2 Longitudinal-Mode Control 129
   9.3 Burying Epitaxy on Mesas and V-Grooves 133
   9.3.1 Structures on Index-Guided Lasers 133
   9.3.2 Fabrication of Transverse-Mode-Controlled Structures 134
   9.4 Mass-Transport Technique 136
   9.5 Selective Meltback Technique 137
   9.5.1 Selective Meltback Characteristics 137
   9.5.2 Application to an Inner-Stripe Structure 138
   9.5.3 Application to BH Stripe-Lasers 140
   9.6 Overgrowth on Gratings 141
   9.7 Growth of Quantum Wells 141
   9.8 Growth of Multilayer Bragg Mirrors 145
10. Surface-Emitting Lasers 147
   10.1 The Concept of Surface-Emitting Lasers 147
   10.2 Structure and Characteristics 148
   10.2.1 GaInAsP/InP Surface-Emitting Lasers 148
   10.2.2 GaA1As/GaAs SE Lasers 149
   10.3 Semiconductor Multi-Layer Structure 150
   10.4 Two-Dimensional Arrays 151
   10.5 Ultralow-Threshold Devices 153
   10.6 Future Prospects 154
References 155
Subject Index 167
1. Introduction 1
   1.1 Outline of Semiconductor Laser Theory 1
   1.2 Semiconductor Lasers in Opto-electronics 3
6.

図書

図書
Ivan V. Markov
出版情報: Singapore ; New Jersey : World Scientific, 1995  xii, 422 p. ; 23 cm
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7.

図書

図書
edited by J.P. van der Eerden and O.S.L. Bruinsma
出版情報: Dordrecht : Kluwer Academic, c1995  xiv, 391 p. ; 25 cm
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8.

図書

図書
H.E. Buckley
出版情報: New York : Wiley , London : Chapman & Hall, c1951  xv, 571 p. ; 22 cm
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9.

図書

図書
by J.C. Brice
出版情報: Amsterdam : North-Holland , New York : Sole distributors for the U.S.A. and Canada by American Elsevier, 1973  xiii, 379 p. ; 21 cm
シリーズ名: Series of monographs on selected topics in solid state physics ; v. 12
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10.

図書

図書
edited by William R. Wilcox
出版情報: New York : M. Dekker, c1982  vii, 224 p. ; 24 cm
シリーズ名: Preparation and properties of solid state materials ; v. 7
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