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1.

図書

図書
editors, Mark J. Lododa, R. Singh, Simon S. Ang, Hazara S. Rathore ; [sponsord by] Dielectric Science and Technology, Electronics, and High Temperature Materials Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 244 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; Pv. 2000-5
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2.

図書

図書
editors, R. Singh ... [et al.] ; [sponsord by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 226 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-7
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3.

図書

図書
editors, S. Kar ... [et al.] ; sponsoring divisions: Dielectric Science and Technology, Electronics
出版情報: Pennington, NJ : Electrochemical Society, c2003-c2004  2 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-28, 2003-22
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目次情報: 続きを見る
Symposium Chairs
Preface
Table of Contents
Facts about the Electrochemical Society
High-K Gate Dielectrics - General / Chapter 1:
Challenges for the Integration of High-K Gate Dielectrics / M. Quevedo-Lopez ; B. E. Gnade ; R. M. Wallace
Correlation between the Material Constants and a Figure of Merit for the High-K Gate Dielectrics / S. Kar ; R. Singh
Binary Oxide High-K Gate Dielectrics / Chapter 2:
High Dielectric Constant Gate Insulator Technology using Rare Earth Oxides / H. Iwai ; S. Ohmi ; S. Akama ; C. Ohshima ; I. Kashiwagi ; A. Kikuchi ; J. Taguchi ; H. Yamamoto ; I. Ueda ; A. Kuriyama ; J. Tonotani ; Y. Kim ; Y. Yoshihara ; H. Ishiwara
High Quality ZrO[subscript 2] Thin Films on [left angle bracket]100[right angle bracket] Si Substrates as a Gate Dielectric Material: Processing and Characterization / M. Fakhruddin ; K. F. Poole ; S. V. Kondapi
HfO[subscript 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium / J. Schaeffer ; N. V. Edwards ; R. Liu ; D. Roan ; B. Hradsky ; R. Gregory ; J. Kulik ; E. Duda ; L. Contreras ; J. Christiansen ; S. Zollner ; P. Tobin ; B.-Y. Nguyen ; R. Nieh ; M. Ramon ; R. Rao ; R. Hegde ; R. Rai ; J. Baker ; S. Voight
Electrical Characteristics Improvement of Dy[subscript 2]O[subscript 3] Thin Films by In-Situ Vacuum Anneal
Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Films / J.-Y. Tewg ; J. Lu ; Y. Kuo ; B. Schueler
Effect of Deposition Sequence and Plasma Treatment on ALCVD HfO[subscript 2] n-MOSFET Properties / C. Lim ; A. Hou ; J. Gutt ; S. Marcus ; C. Pomarede ; E. Shero ; H. de Waard ; C. Werkhoven ; L. Chen ; J. Tamim ; N. Chaudhary ; G. Bersuker ; J. Barnett ; C. Young ; P. Zeitzoff ; G. A. Brown ; M. Gardner ; R. W. Murto ; H. R. Huff
Characteristics of High-K Gd[subscript 2]O[subscript 3] Films Deposited on Different Orientation of Si Substrate
Hafnium-Doped Tantalum Oxide High-K Dielectrics / P. C. Liu
Silicate/Aluminate High-K Dielectrics and Reliability / Chapter 3:
Defect Generation in High-K Dielectric Stacks: Characterization and Modelling / M. Houssa ; J. L. Autran ; V. V. Afanas'ev ; A. Stesmans ; M. M. Heyns
Ultra-Thin Zirconium and Hafnium Silicate Films Deposited by MOCVD on Si(100) / D. Landheer ; X. Wu ; H.-W. Chen ; M.-S. Lee ; S. Moisa ; T.-Y. Huang ; T.-S. Chao ; Z.-H. Lu ; W. N. Lennard
Effect of Post-Annealing on the Electrical Properties of ZrO[subscript 2] and ZrAlO / M. Mansouri ; Y.-L. Chiou ; Y. Ono ; S. T. Hsu
Improved Scalability of High-K Gate Dielectrics by using Hf-Aluminates / T. H. Hou ; H. de Warrd
Reliability and Plasma-Induced Degradation of High-K Gate Dielectrics in MOS Devices / K.-S. Chang-Liao ; P.-J. Tzeng
Stability of High-K Thin Films for Wet Process
High-K Gate Dielectric Interfaces / Chapter 4:
Nitrogen Incorporation and High Temperature Forming Gas Anneal For High-K Gate Dielectrics / J. C. Lee ; R. Choi ; K. Onishi ; H. Cho ; C. Kang ; S. Krishnan
Integrity of Hafnium Silicate/Silicon Dioxide Ultrathin Films on Silicon / J. Morais ; L. Miotti ; G. V. Soares ; R. Pezzi ; K. P. Bastos ; M. C. M. Alves ; I. J. R. Baumvol ; A. L. P. Rotondaro ; J. J. Chambers ; M. R. Visokay ; L. Colombo
Suppression of Silicidation for Zirconia, Hafnia, and Silicate on Silicon by Helium Annealing / K. Muraoka
Analysis of Electrically Active Defects at Si(100)-HfO[subscript 2] Interface / B. J. O'Sullivan ; E. O'Connor ; P. K. Hurley ; M. Modreanu ; F. Roussel ; H. Roussel ; M. A. Audier ; J. P. Senateur ; Q. Fang ; I. W. Boyd ; C. Jimenez ; T. Leedham
Thermal Stability of the HfO[subscript 2]/SiO[subscript x]N[subscript y]-Si Interface / R. P. Pezzi ; H. Boudivov ; R. I. Hegde ; H. H. Tseng ; P. J. Tobin
Non-Contact Electrical Characterization of High-Dielectric-Constant (High-K) Materials / P. Y. Hung ; B. Foran ; A. Diebold ; X. Zhang ; C. Oroshiba
High-K Capacitor Dielectrics / Chapter 5:
Ruthenium Bottom Electrode Prepared by Electroplating for High-K DRAM Capacitor / J. J. Kim ; O. J. Kwon ; M. S. Kang
Regional Charge Transport Characteristics of Integrated Metal-Oxide MIM Capacitors / D. R. Roberts ; S. Kalpat ; T. P. Remmel ; M. A. Said ; M. V. Raymond ; R. Ramprasad ; E. D. Luckowski ; M. Miller
High Capacitance and Low Leakage Ta[subscript 2]O[subscript 5] MIM Capacitor for DRAM / W. Li ; G. S. Sandhu
High Dielectric Constant Metal Oxide Films via Photochemical Metal Organic Deposition (PMOD) Process / S. P. Mukherjee ; P. J. Roman, Jr. ; H. O. Madsen ; L. G. Svendsen ; M. A. Fury ; S. J. Barstow ; A. Jeykumar ; C. L. Henderson
Seed Layer Free Ruthenium Precursor for MOCVD / N. Oshima ; T. Shibutami ; K. Kawano ; S. Yokoyama ; H. Funakubo
Low-Leakage Tantalum Oxide MIM Capacitor Module for Cu-Interconnected RF BiCMOS Technology / C. C. Barron ; M. Sadd ; P. Zurcher
Author Index
Subject Index
Interface Issues
Tailoring High-K/Silicon Interface for Nanoelectronics Applications / R. Puthenkovilakam ; J. Chang
Reducing the Interfacial Formation of SiO[subscript x] in HfO[subscript 2] MOS Structures: A Study in Pre-Deposition Cleaning and Surface Oxidation, and Post-Deposition Annealing / H. Harris ; K. Choi ; N. Biswas ; I. Chary ; L. Xie ; N. Mehta ; G. Kipshidze ; M. White ; H. Temkin ; S. Gangopadhyay
Influence of the 5 A TaN[subscript x] Interface Layer on Dielectric Properties of the Zr-Doped TaO[subscript x] High-K Film
Plasma Modification of Hf Based High-K Dielectrics: Effect of Nitridation and Silicon Nitride Deposition / W. Tsai ; J. W. Maes ; H. De Witte ; J. Chen ; A. Delabie ; R. Carter ; O. Richard ; M. Caymax ; T. Conrad ; E. Young ; S. DeGendt
Method for Determining the Effectiveness of Silicon Nitride as a Barrier Layer for HfO[subscript 2] / H. Kraus ; J. Snow ; P. van Doorne ; W. Fyen ; P. W. Mertens ; F. Kovacs
Effect of Surface Preparation on High-K Gate Stack Device Performance / N. Moumen ; B. H. Lee ; J. Peterson
Deposition Methods and Processing - I
Some Recent Developments in the Metalorganic Chemical Vapor Deposition of High-K Dielectric Oxides / P. R. Chalker ; A. C. Jones
A Comparative Study of Erbium Oxide and Gadolinium Oxide High-K Dielectric Thin Films Grown by Low-Pressure Metalorganic Chemical Vapour Deposition (MOCVD) using [beta]-Diketonates as Precursors / M. P. Singh ; C. S. Thakur ; K. Shalini ; T. Shripathi ; N. Bhat ; S. A. Shivashankar
HfO[subscript x]N[subscript y] and HfSi[subscript x]O[subscript y]N[subscript z] High-K Layers Deposited by MOCVD in Mixed Gas Flows of N[subscript 2]O and O[subscript 2] / C. Zhao ; S. Van Elshocht ; T. Conard ; Z. Xu ; S. DeGendt|cM. Heyns
Electrical Characterization - I
Internal Photoemission over High-K Insulating Barriers / V. V. Afanas'ev
Leakage Current Behavior of HfO[subscript 2] Thin Films / M. N. Jones ; Y. W. Kwon ; D. P. Norton
Experimental Values of a Quantization Index of the Accumulation Layers of Different High-K Gate Dielectrics / T. Kachru ; M. Bhagat
Deposition Methods and Processing - II
Tensile Strain in Si due to Expansion of Lattice Spacings in CeO[subscript 2] Epitaxially Grown on Si (111) / Y. Nishikawa ; D. Matsushita ; N. Satou ; M. Yoshiki ; T. Schimizu ; T. Yamaguchi ; H. Satake ; N. Fukushima
Selective Wet Etching of Hf-based Layers / M. Claes ; V. Paraschiv ; H. Boutkabout ; T. Witters ; E. Rohr ; B. Coenegrachts ; J. Vertommen ; R. Lindsay ; W. Boullart ; M. Heyns
Alternating Pulse Deposition of High-K Metal Oxide Thin Films using Hf(NO[subscript 3])[subscript 4] as a Metal and an Oxygen Source with Multiple In-Situ Annealing / J.F. Conley, Jr. ; D. Tweet ; G. Stecker ; R. Solanki ; W.W. Zhuang
Improvement of Electrical Properties of Alumina Films by Nitrogen Added Plasma Enhanced Atomic Layer Deposition / J.W. Lim ; S.J. Yun ; J.H. Lee
The Role of TXRF in the Introduction of High-K Materials into IC Processing / D. Hellin ; B. Onsia ; C. Vinckier
Metal Gates
Characterization of Resistivity and Work Function of Sputtered-TaN Film for Gate Electrode Applications / C. S. Kang ; H.-J. Cho ; Y. H. Kim ; C. Y. Kang ; A. Shahriar ; C. H. Choi ; S. J. Rhee
NbO as a Gate Electrode for NMOSFETs / W. Gao ; J. F. Conley
A Novel Iridium Precursor for MOCVD / M. Takamori ; T. Yamakawa ; S. Watari ; H. Fujisawa ; M. Shimizu ; H. Niu
Advanced Ruthenium Precursors for Thin Film Deposition / C. A. Hoover ; M. M. Litwin ; J. Peck ; G. B. Piotrowski ; D. M. Thompson
Silicates and Effects of Post-Deposition Treatments / Chapter 6:
Effects of NH[subscript 3] Annealing on High-K HfSiON/HfO[subscript 2] Gate Stack Dielectrics
Nitridation of Hafnium Silicate Thin Films Deposited by Atomic Layer Deposition / Y. Senzaki ; H. Chatham ; R. Higuchi ; C. Bercaw ; J. DeDontney
Thermal Stability and Compatibility with Cmos Processing / Chapter 7:
Scaling of Hf-Based Gate Dielectrics--Integration with Polysilicon Gates / W. Deweerd ; V. Kaushik ; A. Kerber ; S. Kubicek ; M. Niwa ; L. Pantisano ; R. Puurunen ; L. Ragnarsson ; T. Schram ; Y. Shimamoto ; W. Vandervorst
Suppression of Silicidation in Poly-Si/High-K Insulator/SiO[subscript 2]/Si Structure by Helium Through Process
Effect of Post Metallization Annealing for La[subscript 2]O[subscript 3] Gate Thin Films on Electrical Characteristics / S.-I. Ohmi ; K. Tsutsui
Defect Characterization and Reliability / Chapter 8:
Photoelectron Spectroscopy Investigation of High K Dielectrics / K. Demirkan ; A. Mathew ; R. L. Opila
Soft Breakdown Phenomena in High-K Gate Dielectrics
Low Frequency Noise Study of n-MOSFETs with HfO[subscript 2] Gate Dielectric / E. Simoen ; A. Mercha ; C. Claeys
Simulations of Bias Temperature Instabilities in p-MOSFETs with Hf[subscript x]SiO[subscript y]-Based Gate Dielectrics / C. Bizzari
The Effects of Forming Gas Anneal Temperature and Dielectric Leakage Current on TDDB Properties of HfO[subscript 2] Devices / Y.-H. Kim
Charge Trapping and Electron Mobility Degradation in MOCVD Hafnium Silicate Gate Dielectric Stack Structures / C. D. Young ; T.H. Hou ; E. Cartier ; P. Lysaght ; J. Bennett ; C.-H. Lee ; S. Gopalan ; G. Groeseneken
Electrical Characterization - II / Chapter 9:
High Hole Mobility of Al[subscript 2]O[subscript 3] MOSFETs on Dislocation Free Ge-on-Insulator Wafers / A. Chin ; D.S. Yu ; C.H. Wu ; C.H. Huang ; W.J. Chen
Extraction of the High-K Gate Dielectric Parameters from the Capacitance Data
Characteristics of Thermally Evaporated HfO[subscript 2] / R. Garg ; N. A. Chowdhury ; R. K. Jarwal ; D. Misra ; P. K. Swain ; M. Bhaskaran
Characterization of High-K Dielectric Stacks for Flash Memory Applications / Y.L. Chiou
Electrical Characteristics of High-K Stack Gate Dielectric Thin Films with La[subscript 2]O[subscript 3] as a Buffer Layer
Low-frequency Noise Characteristics of MISFETs with La[subscript 2]O[subscript 3] Gate Dielectrics / H. Sauddin
Investigation of High-K Dielectric Properties with the Non-Contact SASS Technique / M. Wilson ; J. Lagowski ; J. D'Amico ; P. Edelman ; A. Savtchouk
Electrical Characteristics of High-K La[subscript 2]O[subscript 3] Thin Film Deposited by E-Beam Evaporation Method
Ferroelectric Layers and Memory Devices / Chapter 10:
Reduction in Programming Voltage of Non-Volatile Flash Memory Using High-K Dielectric Stacks / Y. L. Chiou
Reaction Mechanism of a Titanium Source, Ti(MPD)(METHD)[subscript 2], in Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO[subscript 3] Films / T. Nishimura ; T. Nakamura ; K. Tachibana
Characteristics of (Pb, Sr)TiO[subscript 3] Films Post Treated by Low Temperature Technologies / J.-L. Wang ; C.-K. Jan ; D.-C. Shye ; M.-W. Kuo ; H.-C. Cheng
Symposium Chairs
Preface
Table of Contents
4.

図書

図書
editors, Enrico Colla, Dragan Damjanovic, and Mava Setter ; [organized by] the Institute of Electrical and Electronic Engineers, Ultrasonics, Ferroelectrics and Frequency Control Society
出版情報: Piscataway, NJ : IEEE Service Center, c1998  596 p. ; 28 cm
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5.

図書

図書
editors, K.M. Nair ... [et al.]
出版情報: Westerville, Ohio : The American Ceramic Society, c2005  ix, 416 p. ; 23 cm
シリーズ名: Ceramic transactions ; v. 167
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目次情報: 続きを見る
Materials Synthesis and Processing
Relaxors
Novel Compositions
Material Design
Materials for Multilayer Electronic Devices
Processing-Microstructure-Property Relationship
Applications
Environmental Issues
Economic/Cost Analysis of Tomorrow's Electronc Devices
Materials Synthesis and Processing
Relaxors
Novel Compositions
6.

図書

図書
editors, Hazara S. Rathore ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1997  viii, 262 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-8
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7.

図書

図書
editors W.D. Brown ... [et al.] ; Dielectric Science and Technology, and Electronics Divisions [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1998  x, 366 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-3
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8.

図書

図書
editors, Bernard M. Kulwicki, Ahmed Amin and Ahmad Safari ; [organized by] the Institute of Electrical and Electronic Engineers, Ultrasonics, Ferroelectrics and Frequency Control Society
出版情報: Piscataway, NJ : IEEE Service Center, c1996  2 v. (1034 p.) ; 28 cm
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9.

図書

図書
editors: R. K. Pandey, Michael Liu, Ahmad, Safari
出版情報: Piscataway, NJ : Additional copies of this publication are available from IEEE Service Center, 1994  xix, 855 p. ; 29 cm
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10.

図書

図書
editors: Michael Liu ... [et al.]
出版情報: Piscataway, NJ : Additional copies of this publication are available from IEEE Service Center, c1992  xii, 644 p. ; 29 cm
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