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1.

図書

図書
G. Fontaine ; [Translated from French by P. J. Arthern]
出版情報: [Eindhoven : N.V. Philips], 1963  470 p. ; 21 cm
シリーズ名: Philips technical library
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2.

図書

図書
Shuji Nakamura, Gerhard Fasol
出版情報: Berlin ; Tokyo : Springer, c1997  xvi, 343 p. ; 24 cm
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3.

図書

図書
S.B. Dewan, A. Straughen
出版情報: New York : J. Wiley, c1975  xv, 523 p. ; 23 cm
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目次情報: 続きを見る
Circuits with Switches and Diodes
Power Semiconductor Switches
AC Voltage Controllers
Controlled Rectifiers
DC-to-DC Converters (Choppers)
Inverters
AC-to-AC Converters
Circuits with Switches and Diodes
Power Semiconductor Switches
AC Voltage Controllers
4.

図書

図書
Gerold W. Neudeck
出版情報: Reading, Mass. : Addison-Wesley, c1989  ix, 180 p. ; 24 cm
シリーズ名: Modular series on solid state devices ; v. 2
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目次情報: 続きを見る
Introduction to the Diode / 1:
P-N Junction Statics / 2:
The Ideal Diode Volt-Ampere Characteristic / 3:
Deviations from the Ideal Diode / 4:
P-N Junction Admittance / 5:
Switching Response / 6:
Metal-Semiconductor Contacts / 7:
Introduction to the Diode / 1:
P-N Junction Statics / 2:
The Ideal Diode Volt-Ampere Characteristic / 3:
5.

図書

図書
edited by S.M. Sze
出版情報: New York : Wiley, c1990  xii, 643 p. ; 25 cm
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目次情報: 続きを見る
Materials, Technologies, and Device Building Blocks
Materials and Technologies for High-Speed Devices / J. Bean
Device Building Blocks / S. Luryi
Field-Effect and Potential-Effect Devices
The Submicron MOSFET / J. Brews
Homogeneous Field-Effect Transistors / M. Hollis ; R. Murphy
Heterostructure Field-Effect Transistors / S. Pearton ; N. Shah
Bipolar Transistors / P. Asbeck
Hot-Electron Transistors
Quantum-Effect, Microwave, and Photonic Devices
Quantum-Effect Devices / F. Capasso, et al.
Microwave Diodes / S. Sze
High-Speed Photonic Devices / W. Tsang
Appendices
Index
Materials, Technologies, and Device Building Blocks
Materials and Technologies for High-Speed Devices / J. Bean
Device Building Blocks / S. Luryi
6.

図書

図書
U. Tietze and Ch. Schenk
出版情報: Berlin ; New York : Springer-Verlag, 1976  xii, 686 p. ; 23 cm
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7.

図書

図書
Kern K.N. Chang
出版情報: Englewood Cliffs : Prentice-Hall, c1964  xiv, 256 p. ; 24 cm
シリーズ名: Prentice-Hall electrical engineering series
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8.

図書

図書
edited by Shuji Nakamura and Shigefusa F. Chichibu
出版情報: London : Taylor & Francis, 2000  372 p. ; 24 cm
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目次情報: 続きを見る
Basics Physics and Materials Technology of GaN LEDs and LDs / Steven P. DenBaars1.:
Introduction / 1.1:
Historical Evolution of LED Technology / 1.1.1:
Basic Physics of LEDs: Injection Luminescence / 1.2:
Direct and Indirect Band-Gap Material / 1.2.1:
Radiative Recombination / 1.2.2:
External Quantum Efficiency / 1.2.3:
Luminous Efficiency / 1.2.4:
Injection Efficiency / 1.2.5:
Heterojunction vs. Homojunction LED Materials / 1.2.6:
Quantum Well LEDs / 1.2.7:
LED Materials Selection / 1.3:
Energy Band Structure/Lattice Constants / 1.3.1:
GaN Physical Properties / 1.3.2:
GaN Based LED Structures / 1.3.3:
Crystal Growth / 1.4:
MOCVD Growth / 1.4.1:
MOCVD Systems for Production / 1.4.2:
Molecular Beam Epitaxy (MBE) / 1.4.3:
Chloride Vapor Phase Epitaxy / 1.4.4:
Group-III Nitride Materials Growth Issues / 1.5:
Substrates / 1.5.1:
Nucleation Layer Technology / 1.5.2:
Growth and Doping of GaN / 1.5.3:
Growth of AlGaN and AlGaN/GaN Heterostructures / 1.5.4:
Growth of InGaN and InGaN/GaN Heterostructures / 1.5.5:
Conclusions / 1.6:
References / 1.7:
Theoretical Analysis of Optical Gain Spectra / Takeshi Uenoyama ; Masakatsu Suzuki2.:
Optical Gains Spectra by Many-Body Approach / 2.1:
Linear Response Theory / 2.2.1:
Screening Effects / 2.2.2:
Self-Energies of Electron Gas / 2.2.3:
Coulomb Enhancement / 2.2.4:
Electronic Band Structures / 2.3:
Electronic Band Structures of Bulk GaN and AlN / 2.3.1:
Strain Effect on Electronic Band Structures / 2.3.2:
k.p Theory for Wurtzite / 2.3.3:
Physical Parameters / 2.3.4:
Subband Structures of GaN/AlGaN Quantum Wells / 2.3.5:
Subband in Wurtzite Quantum Wells / 2.3.6:
Optical Gain Spectra of III-V Nitrides LD Structures / 2.4:
Free Carrier Model / 2.4.1:
Coulomb Enhancement (Excitonic Effects) in the Optical Gain / 2.4.2:
Optical Gain with Localized States / 2.4.3:
Electrical Conductivity Control / Chris G. Van de Walle2.5:
Doping / 3.1:
Theory of Native Defects and Impurities / 3.1.1:
n-type Doping / 3.1.2:
p-type Doping / 3.1.3:
Band Offsets / 3.2:
Theory of Band Offsets at Nitride Interfaces / 3.2.1:
Experimental Results for Band Offsets / 3.2.2:
Discussion / 3.2.3:
Acknowledgments / 3.3:
Crystal Defects and Device Performance in LEDs and LDs / Fernando A. Ponce3.4:
CrystalGrowth and Microstructure / 4.1:
Lattice Structure of the Nitride Semiconductors / 4.1.1:
Thin Film Epitaxy and Substrates / 4.1.2:
Epitaxy on SiC Substrates / 4.2:
Epitaxy on Sapphire Substrates / 4.3:
AlN as a Buffer Layer / 4.3.1:
GaN as a Buffer Layer / 4.3.2:
Homoepitaxial Growth of GaN / 4.4:
Defect Microstructurein LEDs and LDs / 4.5:
Large Defect Densities in High Performance Materials / 4.5.1:
Columnar Structure of GaN on Sapphire / 4.5.2:
Tilt Boundaries / 4.5.3:
Twist Boundaries / 4.5.4:
Polarity and Electronic Properties / 4.6:
The Nature of the Dislocation / 4.7:
Determination of the Burgers Vector / 4.7.1:
Nanopipes and Inversion Domains / 4.7.2:
Spatial Variation of Luminescence / 4.8:
Undoped Material / 4.8.1:
Doped Materials / 4.8.2:
Microscopic Properties of In[subscript x]Ga[subscript 1-x]N Quantum Wells / 4.9:
The Nature of the InGaN/GaN Interface / 4.9.1:
Microstructure of Quantum Wells / 4.9.2:
Spatial Variation of the luminescence of In[subscript x]Ga[subscript 1-x]N Quantum Wells / 4.9.3:
Microstructure and Device Performance / 4.10:
Stress and Point Defect Structure / 4.10.1:
Minimization of Strain by Maximizing Film Smoothness / 4.10.2:
The Role of Dislocations in Strain Relaxation / 4.10.3:
The Role of Nanopipes and Extension to ELOG Structures / 4.10.4:
Emission Mechanisms and Excitons in GaN and InGaN Bulk and QWs / Shigefusa F. Chichibu ; Yoichi Kawakami ; Takayuki Sota4.11:
GaN Bulk Crystals / 5.1:
Free and Bound Excitons / 5.2.1:
Biexcitons in GaN / 5.2.2:
Strain Effects / 5.2.3:
Phonons in Nitrides / 5.2.4:
InGaN Bulk and QWs for Practical Devices / 5.3:
Quantized Energy Levels / 5.3.1:
Piezoelectric Field / 5.3.2:
Spontaneous Emission of Localized Excitons / 5.3.3:
Localized Exciton Dynamics / 5.3.4:
Optical Gain in Nitrides / 5.3.5:
Life Testing and Degradation Mechanisms in InGaN LEDs / Marek Osinski ; Daniel L. Barton5.4:
Life Testing of InGaN/AlGaN/GaN LEDs / 6.1:
Life Testing Primer / 6.2.1:
Potential Degradation Regions in LEDs / 6.2.2:
Life Test System Considerations / 6.2.3:
Results of Life Tests on Nichia Blue InGaN/AlGaN/GaN Double Heterostructure LEDs / 6.2.4:
Analysis of Early Test Failures / 6.3:
Analysis of LED #19 / 6.3.1:
Analysis of LEDs #16 and 17 / 6.3.2:
Effects of UV Emission on Plastic Transparency / 6.4:
Thermal Degradation of Plastic Package Transparency / 6.5:
Degradation of GaN-Based LEDs Under High Current Stress / 6.6:
Double Heterostructure Device Testing / 6.7:
EBIC Analysis / 6.8:
Pulsed Current Stress Experiments and Results on Quantum Well LEDs / 6.9:
Failure Analysis of Degraded Quantum Well LEDs / 6.10:
Summary / 6.11:
Development and Future Prospects of GaN-based LEDs and LD / Shuji Nakamura6.13:
Properties of InGaN-based LEDs / 7.1:
Amber LEDs / 7.1.1:
UV/Blue/Green LEDs / 7.1.3:
Roles of Dislocations in InGaN-Based LEDs / 7.1.4:
LDs Grown on Sapphire Substrate / 7.2:
LDs Grown on Sapphire Substrates / 7.2.1:
ELOG Substrate / 7.2.3:
InGaN-Based LDs Grown on ELOG Substrates / 7.2.4:
LDs Grown on GaN Substrate / 7.3:
Free-Standing GaN Substrates / 7.3.1:
Characteristics of LDs / 7.3.2:
Future Prospects of InGaN-based Emitting Devices / 7.4:
Appendix / 7.5:
Parameters Table
Subject Index
Basics Physics and Materials Technology of GaN LEDs and LDs / Steven P. DenBaars1.:
Introduction / 1.1:
Historical Evolution of LED Technology / 1.1.1:
9.

図書

図書
Yurii R. Nosov ; translated from Russian by Albin Tybulewic
出版情報: New York : Plenum Press, 1969  xvi, 233 p. ; 24 cm
シリーズ名: Monographs in semiconductor physics ; v. 4
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