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1.

図書

図書
edited by Yasuhiko Arakawa ... [et al.]
出版情報: Bristol : Institute of Physics Publishing, c2002  xxxi, 855 p. ; 25 cm
シリーズ名: Institute of Physics conference series ; no. 170
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International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award
Quantum Devices Award
Young Scientist Award
Preface
Sponsors
Symposium Committees
Acknowledgements
Electronic Devices / Chapter 1:
Progress in nitride-based microwave HEMTs / L F Eastman ; V Tilak ; J Smart ; B Green ; A Vertiatchikh ; N Weimann ; O Ambacher ; E Chumbes ; H Kim ; T Prunty ; J H Hwang ; W J Schaff ; B K Ridley ; J R Shealy ; V Kaper
Status of AlGaN/GaN HEMTs for microwave and power switching applications / U K Mishra ; N-Q Zhang ; Y-F Wu
High speed InP-based heterojunction bipolar transistors / M Rodwell ; M Urteaga ; S Lee ; D Scott ; Y-M Kim ; M Dahlstrom ; Y Wei ; T Mathew ; S Long ; A Gossard
High performance recessed gate AlGaN/GaN HEMTs / J S Moon ; W-S Wong ; M Micovic ; M Hu ; J Duvall ; M Antcliffe ; T Hussain ; P Hashimoto ; L McCray
Npn InGaN/GaN double heterojunction bipolar transistors with high common-emitter current gains / T Makimoto ; K Kumakura ; N Kobayashi
High field-emission current density from heavily Si-doped AlN and Al[subscript x]Ga[subscript 1 - x]N / M Kasu
Emitter capacitance cancellation in ultrahigh-speed InP/GaAsSb/InP DHBTs with a staggerred ("type II") band lineup / C R Bolognesi ; M W Dvorak ; S P Watkins ; T W MacElwee
Device technology for high-yield and high-performance InP/InGaAs DHBTs / K Kurishima ; M Ida ; N Watanabe ; T Enoki
A novel resonant tunneling logic gate capable of 100 fs/gate class operation / K Maezawa ; T Tanaka ; T Mizutani
High peak current density and low peak voltage strained In[subscript 0.9-0.8]Ga[subscript 0.1-0.2]As/AlAs RTD grown by metal organic chemical vapor deposition / H Matsuzaki ; J Osaka ; H Sugiyama ; T Kobayashi
DC, RF and stability properties of high current density InGaAs tunnel diodes / M R Deshpande ; S Ageno ; V Nair ; N El-Zein ; G Kramer ; M Kyler ; S Allen ; O Kuboi ; J Lewis ; H Goronkin
On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky barrier diodes / P Jayavel ; K Santhakumar ; M Ogura
Attractive potential around a buried metallic gate in a Schottky collector hot electron transistor / L-E Wernersson ; R Yamamoto ; Y Miyamoto ; E Lind ; I Pietzonka ; W Seifert ; L Samuelson ; K Furuya
Investigation of DLTS and low-frequency noise behaviour of In[subscript 0.49]Ga[subscript 0.51]P/In[subscript 0.22]Ga[subscript 0.78]As p-HEMT grown by using a compound source MBE / J-H Kim ; S-J Jo ; J-W Kim ; P-W Yu ; J-I Song
Sub 0.1 [mu]m asymmetric [Gamma]-gate PHEMT process using electron beam lithography / S C Kim ; B O Lim ; H S Kim ; S D Lee ; B H Lee ; W S Sul ; D-H Shin ; J K Rhee
0.12 [mu]m gate length In[subscript 0.52]Al[subscript 0.48]As/In[subscript 0.53]Ga[subscript 0.47]As HEMTs on transferred substrate / S Bollaert ; X Wallart ; S Lepilliet ; A Cappy ; E Jalaguier ; S Pocas ; B Aspar ; J Mateos
Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors with high Al compositions / N Maeda ; K Tsubaki ; T Saitoh
Low-frequency noise characteristics of AlGaN/GaN HEMT / H Makihara ; M Akita ; Y Ohno ; S Kishimoto
Electroluminescence in AlGaN/GaN HEMTs / T Nakao
A depletion-mode InP MOSFET with a liquid phase oxidized InGaAs gate / S-J Kang ; J-C Han ; H-J Song ; S-W Park
Characteristics of depletion-mode In[subscript 0.53]Ga[subscript 0.47]As MOSFETs
Depletion and accumulation mode operation of GaAs MISFETs with nm-thin gate insulating layers formed by UV & ozone process / Y Kita ; Y Ohta ; N C Paul ; K liyama ; S Takamiya
Image rejection mixer For WLAN application / W-C Wu ; H-H Lin
Multiband quantum transport with self-consistent scattering calculation based on Green's function method / M Ogawa ; K Okita ; T Miyoshi
Optical Devices / Chapter 2:
Blue and violet vertical cavity light emitters and multielement arrays / Y He ; I Ozden ; M Diagne ; H Zhou ; E Makarona ; A V Nurmikko ; J Han ; T Takeuchi ; M Krames
High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide laser diode operating out to 1.4[mu]m / W Ha ; V Gambin ; M Wistey ; S Kim ; J Harris
Low-noise quantum well infrared photodetectors for high-resolution thermal imaging / H Schneider ; M Walther ; J Fleissner ; R Rehm ; E Diwo ; K Schwarz ; P Koidl ; G Weimann ; J Ziegler ; R Breiter ; W Cabanski
Super high output power of 4.2 W in AlGaInN-based blue-violet laser diode array / S Goto ; T Tojyo ; S Ansai ; Y Yabuki ; T Hino ; H Yamanaka ; Y Moriya ; Y Ito ; Y Hamaguchi ; S Uchida ; M Ikeda
Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device / J Bae ; B H Park ; J Y Kim ; O'D Kwon
High efficiency AlGaInP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength / A Knigge ; M Zorn ; H Wenzel ; M Weyers ; G Trankle
340 nm-band bright UV-LEDs using quaternary InAlGaN active region / H Hirayama ; A Kinoshita ; M Ainoya ; T Yamabi ; T Yamanaka ; A Hirata ; Y Aoyagi
1.4 [mu]m GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy / Y Ikenaga ; T Miyamoto ; S Makino ; T Kageyama ; M Arai ; F Koyama ; K Iga
Single fundamental mode laser operation in microlensed vertical cavity surface emitting lasers / S M Hwang ; S H Nam ; S-H Park ; Y Park ; H Jeon ; J C Woo
Semiconductor Raman amplifiers for time gate demodulation in terabit optical communication system / T Tanabe ; K Suto ; T Saito ; T Kimura ; Y Oyama ; J Nishizawa
Generation of mid-infrared radiation in quantum well laser due to GaAs lattice nonlinearity / A A Afonenko ; V Ya Aleshkin ; N B Zvonkov
Room temperature self-excited electronic Raman scattering by intersubband transitions in compressively strained InGaAs quantum-well lasers / W Susaki ; H Yaku ; X Gao ; K Nishikawa
Characteristics of AlGaN quantum well light emitting diodes under large current operation / T Nishida
Orange GaInN/GaN multi-quantum-well light-emitting diodes using a post-annealing technique / H Ishikawa ; T Egawa ; T Jimbo
High-efficiency monochromatic and white InGaN flip-chip dice / J C Bhat ; A Kim ; D Collins ; R Fletcher ; R Khare ; S Rudaz
Magnetic Materials / Chapter 3:
MOVPE growth experiments and magnetic characterization of (GaMn) As layer structures / M Lampalzer ; K Volz ; W Treutmann ; S Nau ; T Torunski ; K Megges ; J Lorberth ; W Stolz
Growth and light-induced ferromagnetic properties of InMnAsSb/InSb heterostructure / Y K Zhou ; M Kanamura ; R Asano ; H Asahi
Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures / K H Ploog ; M Ramsteiner ; H-P Schonherr ; H J Zhu
Structural and magnetic properties of ferromagnetic MnAs films on GaAs(001) / L Daweritz ; F Schippan ; M Kastner ; B Jenichen ; V M Kaganer ; B Dennis ; K-U Neumann ; K R A Ziebeck
Spin injection with Fe/InAs hybrid structure / H Ohno ; K Yoh ; Y Katano ; K Sueoka ; K Musaka
Novel Systems / Chapter 4:
UHV-CVD growth of Si[subscript 1 - x - y]Ge[subscript x]C[subscript y] for device applications / M Kubo ; Y Kanzawa ; T Takagi ; K Yuki ; K Toyoda ; K Nozawa ; A Asai ; Y Hara ; T Ohnishi
Vertical and lateral heterogeneous integration using direct wafer bonding / J Geske ; V Jayaraman ; Y L Okuno ; J E Bowers
Device characteristics of vertical field effect transistors with ultra-short InGaAs/GaAs channels / F Ertl ; R A Deutschmann ; D Schuh ; M Bichler ; G Abstreiter
Band anticrossing in highly mismatched compound semiconductor alloys / W Walukiewicz ; K M Yu ; J Wu ; J W Ager ; E E Haller ; I Miotkowski ; A K Ramdas ; C-H Su
Phase stability of CdO on zincblende layers grown on GaAs substrates by metalorganic molecular-beam epitaxy / A B M A Ashrafi ; I Suemune ; H Kumano ; Y W Ok ; T-Y Seong
Temporary and permanent wafer bonding for reliable backside processing of compound semiconductor wafers / V Dragoi ; T Glinsner ; P Lindner ; C Schaefer ; T Kazuta ; D Hornik ; M Reiche
Three-dimensional structuring using self-rolling of strained InGaAs/GaAs films / V Ya Prinz ; A B Vorob'ev ; V A Seleznev
Selective MBE growth of GaAs/AlGaAs nanowires on patterned GaAs (001) substrates and its application to hexagonal nanowire network formation / T Sato ; I Tamai ; C Jiang ; H Hasegawa
A novel surface patterning using FIB and in-situ etching / Y Asaoka ; T Arai ; N Sano ; T Kaneko
Novel fabrication method of semiconductor nano-electromechanical structures using controlled surface step distribution / H Yamaguchi ; Y Hirayama
Quantum Transport / Chapter 5:
Transport properties in back-gated InAs/GaSb heterostructures / K Suzuki ; S Miyashita
Conductance fluctuations in quantum wires formed at spin-splitting narrow gap heterojunctions / S Yamada ; Y Sato ; T Kita ; S Gozu
Magneto-transport properties of electrons in quantum wells with quasi-periodic interface corrugation / T Noda ; H Sakaki
Numerically evaluated exact properties of the conductance of regular and chaotic quantum cavities / Y Takagaki
A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes / M Suhara ; S Ooki ; T Okumura
A quasi-1-dimensional electron wave interference transistor with recess-etched grating structure fabricated by electron beam lithography / T Murata ; S Mizuno
Scattering processes of 2D electrons by charged quantum dots in n-AlGaAs/GaAs heterojunction channels with 10nm-scale embedded InGaAs islands / T Kawazu
Negative differential conductance of In[subscript 0.4]Ga[subscript 0.6]As/GaAs(311)B laterally coupled quantum dots / H-Z Song ; Y Okada ; K Akahane ; H Z Xu ; M Kawabe
Optical Characterization / Chapter 6:
Nano seismology: acoutsic shock wave generation and terahertz emission from InGaN/GaN structures / J Y Sohn ; J S Yahng ; D J Park ; D S Kim ; E Oh ; G D Sanders ; C J Stanton
Time-resolved THz spectroscopy of miniband transport in biased GaAs/AlGaAs superlattices / Y Shimada ; K Hirakawa
Ultrafast and large nonlinear optical response due to spatial structure of internal electric field in semiconductor thin film / T Isu ; K Akiyama ; N Tomita ; T Nishimura ; Y Nomura ; H Ishihara ; K Cho
Modulation of PL recombination processes in N doped GaAs/Al[subscript 0.33]Ga[subscript 0.67]As SQW by electric field / K Onomitsu ; A Kawaharazuka ; T Okabe ; H Saito ; Y Horikoshi
Localized and resonant states of shallow acceptors in Ge/Ge[subscript 1 - x]Si[subscript x] multiple-quantum well heterostructures / B A Andreev ; V I Gavrilenko ; I V Erofeeva ; D V Kozlov ; O A Kuznetsov
Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy / K Hayashida ; M Nishio ; S Wang ; Y Chang ; Q Guo ; H Ogawa
Femto-second pump-probe study of the nonlinear transmission in an asymmetric triple quantum well structure / K Mizutani ; M Yamaguchi ; N Sawaki
Spatiotemporal imaging of nonequilibrium current during impact ionization avalanche in n-GaAs / K Aoki
Description of eigen energy in deep quantum wells by narrow-gap band theory: InGaAs/InAlAs and InGaAs/AlAsSb system under Landau quantization / N Kotera ; K Shibata ; T Kawano ; T Sakai ; T Ikaida ; N Miura ; N Georgiev ; T Mozume
Ionic screening effects on resonant light scattering by intersubband excitations in n-type AlGaAs/GaAs heterojunctions / S M Maung ; S Katayama ; M Koyano
Determination of the critical layer thickness of GaAs/InGaAs strained quantum wells by scanning near-field optical spectroscopy / Y Ohizumi ; T Tsuruoka ; S Ushioda
Persistent photoconductivity under atmospheric pressure in uniformly doped n-GaAs prepared by intermittent injection of TMG and AsH[subscript 3] / F Matsumoto ; H Watanabe
Self-consistent computer analysis of cathodoluminescence in-depth spectra for compound semiconductor heterostructures / F Ishikawa
Ultra fine analysis of linear response of confined excitons in GaAs nano-layers / K Yoshimoto
Anomalous temperature dependence of the photoluminescence properties in GaAs triple quantum wells with growth islands / A Satake ; K Hayata ; N Shiraishi ; K Fujiwara ; L Schrottke ; R Hey ; H T Grahn
Optical studies of surface quantum well structures with intermediate-layer thicknesses / M Sakai ; J Hagino ; H Tsuruta
Quantum Nanostructures / Chapter 7:
Quantum dots: lasers and amplifiers / D Bimberg
Single optical mode coupling of single quantum dot spontaneous emission / G S Solomon ; M Pelton ; Y Yamamoto
Single photon emission from few particle states in InAs quantum dots / R M Thompson ; R M Stevenson ; A J Shields ; I Farrer ; C J Lobo ; D A Ritchie ; M L Leadbeater ; M Pepper
Anti-Stokes photoluminescence and phonon broadening in self-assembled InAs/GaAs quantum dots / C Kammerer ; G Cassabois ; C Voisin ; C Delalande ; Ph Roussignol ; J-M Gerard
Anomalous quantum confined Stark effects in vertically coupled InAs/GaAs self-assembled quantum dots / W Sheng ; J-P Leburton
Biexciton formation in CdTe/Cd[subscript 0.74]Mg[subscript 0.26]Te quantum wires / S Nagahara ; O Wada ; L Marsal ; H Mariette
Stranski-Krastanov growth of (In,Ga)As quantum dots by controlling the wetting layer / M Nakahama ; K Yamashita
Size ordering effects of InAs quantum dots during a GaAs capping growth / Y Saito ; R Ohtsubo ; K Yamaguchi
Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic In[subscript x]Al[subscript 1 - x]As (0.33 [less than or equal] x [less than or equal] 0.52) buffer layers / D Vignaud ; Y Cordier ; P Miska ; D Ferre
Carrier dynamics in spatially ordered InAs quantum dots / S Marcinkevicius ; J Siegert ; R Leon ; S Chaparro ; S R Johnson ; C Navarro ; X Jin ; Y H Zhang
Electro-optical effects in single and multi-stacked dots / A Vasanelli ; R Ferreira ; R Cingolani ; G Bastard
Quantum-confined Stark effect in InGaN pyramidal dots induced by the piezoelectric field / Y Arakawa
Transport through InGaAs/GaAs(311)B quantum dots studied by conductive scanning probes / M Miyagi ; H Shigekawa
Low temperature conductance fluctuations in coupled open dot systems / Y Ochiai ; N Aoki ; D Oonishi ; Y Iwase ; K Ishibashi
Formation mechanism of ZnSe nanocrystals emitting whitish blue in water / N Murase ; M Gao ; T Yazawa ; J Feldmann
Strong band-edge emission from surface modified CdS quantum dots prepared by a colloidal method / D Kim ; N Teratani ; K Mizoguchi ; M Nakayama
Modulation dynamics of red-emitting quantum dot lasers / T Riedl ; J Porsche ; F Scholz ; A Hangleiter
Novel Si/Ge quantum dot mid-infrared photodetector structures with in-plane transport / D Bougeard ; K Brunner
Artificial nanostructure devices of InAs produced by AFM oxidation / S Sasa ; A Nakashima ; M Inoue
UV photoluminescence spectrum of GaN self-assembled quantum dots grown by MOCVD / M Miyamura ; K Tachibana
Material Growth and Characterization / Chapter 8:
P-type conductivity in Si doped Al[subscript x]Ga[subscript 1 - x]As for 0 [less than or equal] x [less than or equal] 1 grown by molecular beam epitaxy on GaAs(113)A surfaces / S Tibebu Kassa
Application of the GW method to the semiconducting materials / M Oshikiri ; F Aryasetiawan
Elastic properties and pressure-induced phase transitions of BNs / H Fujita ; K Shirai ; H K Yoshida
Annealing effect of TlInGaAs/InP DH and MQW structures / A Mizobata ; H J Lee ; O Maeda ; K Konishi
Effect of annealing on the optical parameters in pulsed laser deposited vanadium pentoxide thin films / R T Rajendra Kumar ; B Karunagaran ; D Mangalaraj ; Sa K Narayandass ; P Manoravi ; M Joseph
Molecular orbital study of electronic states by discrete variational X[alpha] method: influences of chalcogen atoms / Y Yamamura ; S Miyamura ; T Inokuma ; K Iiyama
Self-limiting growth of InP by intermittent injection of TMIn/TEIn and TBP in ultra high vacuum and its in-situ monitoring by reflectance anistropy spectroscopy (RAS) / N Otsuka
Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics / S Bhunia ; T Kawamura ; Y Watanabe ; S Fujikawa ; K Uchida ; S Nozaki ; H Morisaki ; J Matsui ; Y Kagoshima ; Y Tsusaka
Study on mechanism of re-entrant RHEED oscillation observed during LT-MBE growth of GaAs / A Nagashima ; M Tazima ; J Yoshino
Silicon carbide delta-doped structures formed by "pulse doping" technique in the vertical hot wall type CVD system / K Takahashi ; T Yokogawa ; M Uchida ; O Kusumoto ; R Miyanaga ; M Kitabatake
Phosphorus and arsenic P-type doping of bulk ZnTe for LED application / S L Wang ; Q X Guo
Roles of the ZnO buffer layer to the properties of ZnO on Si substrates grown by metalorganic vapor phase epitaxy / S-W Kim ; K Ogata ; K Maejima ; S Fujita
Wide wavelength control of highly strained GaInAs/GaAs QWs on patterned substrate for multiwavelength VCSEL array / T Kondo ; N Nishiyama ; M Azuchi
Pseudo-three-dimensional photoelastic characterization of LEC-GaAs single crystal ingot / M Yamada ; T Chu
Optimization of GaAs/Si heteroepitaxy for solar cell application / J Takamori ; Y Shimizu ; T Ueda ; C Yamagishi
Material Growth and Characterization (Nitride) / Chapter 9:
Recent developments in selective area growth and epitaxial lateral overgrowth of III-nitrides / K Hiramatsu
Highly uniform characteristics of blue-violet lasers on a 3-inch o wafer / M Takeya ; T Asano ; S Ikeda ; S Kijima ; T Mizuno
Improvement in crystal quality of GaN films with quantum dots as buffer layers grown on sapphire substrates by molecular beam epitaxy / D Huang ; C W Litton ; M A Reshchikov ; F Yun ; T King ; A A Baski ; H Morkoc
Growth of high-quality GaN on metallic-ZrB[subscript 2] by metalorganic vapor phase epitaxy / Y Yukawa ; T Nakamura ; M Kosaki ; S Nitta ; S Kamiyama ; H Amano ; I Akasaki ; S Otani ; H Kinoshita
Characterization of GaNP grown by photo-assisted MOVPE / Y Itoh ; J Li ; H Ishii ; S Yoshida ; J Kikawa ; K Onabe ; Y Shiraki
Optically-biased photoconductivity spectrum measurements of cubic GaN/GaAs(001) heterostructures / R Katayama ; M Kobayakawa ; A Nagayama
4f configurations of Eu and Tb ions in GaN / T Maruyama ; H Bang ; S Morishima ; K Akimoto ; Y Nanishi
Photoluminescence from polycrystalline GaN grown by MBE on metal substrates / A V Andrianov ; K Yamada ; H Tampo ; V Yu Nekrasov ; Z N Rodionova ; I S Zhuravlev ; N N Zinonev
Structural analysis of GaN layers on GaAs (111)B substrates grown by MOVPE / S Sanorpim ; E Takuma ; H Ichinose
Structural study on stacking faults in GaN/GaAs (001) heterostructures / H Sawada
FEM deformation analysis of air-bridged lateral epitaxial grown GaN films / A Ishibashi
Identification of homogenous and inhomogenous structures of NH[subscript 3] GS-MBE-grown GaN epilayers by ion-channeling studies / S Kurai ; T Saimei ; M Konishi ; S Kubo ; T Taguchi
Growth condition dependence of InN film a-axis directions on sapphire (0001) substrate / T Yamaguchi ; T Araki ; N Teraguchi ; A Suzuki
Characterization of GaN/AlN films with different polarities grown by molecular beam epitaxy on sapphire substrates / P Visconti ; J Jasinski ; Z Liliental-Weber
Thick cubic GaN grown on GaAs by three-step growth / H Tanaka ; A Nakadaira
High-quality GaN growth on AlN/sapphire templates by MOVPE / M Umeno ; T Shibata ; K Asai ; S Sumiya ; Y Kuraoka ; M Tanaka ; O Oda
Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111)Si substrate by selective MOVPE / T Kato ; Y Honda
New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth / Y Kida ; H Miyake ; Y Hori ; T Nagai
The Monte Carlo simulation of epitaxial growth of GaN(0001) with wurtzite structure / A Ishii ; M Tsukao ; O Tomiyama ; T Aisaka
Doping characteristics and structural defects in N/Ge co-implanted GaN / Y Nakano ; T Kachi
High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy / S Yamaguchi ; Y Iwamura ; S Mochizuki
Compositional and structural characterization of novel Al[subscript 1 - x]Si[subscript 1 - x]N ternary alloy / Y Taniyasu
MOVPE-growth and characterization of metastable (GaIn)(NAs)/GaAs heterostructures for 1.3 [mu]m lasers / A Ramakrishnan ; G Ebbinghaus
Evaluation of nanopipes in GaN films by localized avalanche breakdown / M Ohkubo
In-situ XPS and photoluminescence characterization of GaN surfaces grown by MBE on MOVPE GaN templates / S Anatathanasarn ; T Hashizume
Temperature dependence of photoluminescence intensity change due to below-gap excitation in GaN / N Kamata ; J M Zanardi Ocampo ; W Okamoto ; F Takahashi ; K Hoshino ; T Someya
Author Index
International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award
Quantum Devices Award
Young Scientist Award
2.

図書

図書
International Symposium on Compound Semiconductors
出版情報: Piscataway, NJ : Institnte of Electrical and Electronics Engineers, c2000  xx, 530 p. ; 24 cm
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3.

図書

図書
edited by Mike Melloch and Mark A. Reed
出版情報: Bristol ; Philadelphia : Institute of Physics Pub., c1998  xxvii, 666 p. ; 24 cm
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4.

図書

図書
by A.G. Cullis and J.L. Hutchison
出版情報: Philadelphia : Institute of Physics, 1997  xvi, 709 p. ; 24 cm
シリーズ名: Institute of Physics conference series ; no. 157
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目次情報: 続きを見る
Preface
Electron centenary symposium
The materials basis behind the telecommunications revolution / W F Brinkman
The evolution of electron beam lithography and metrology for semiconductor technologies / T Matsuo
High resolution microscopy and nanoscale analysis
The structures of extended defects in Si and other materials studied by HRTEM / S Takeda
Defect structure of InSb grown within a synthetic opal matrix / V N Bogomolov ; J L Hutchison ; S M Samoilovich ; D A Kurdyukov ; J Sloan ; L M Sorokin ; G Wakefield
Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images / A Rosenauer ; T Remmele ; U Fischer ; A Forster ; D Gerthsen
New intermediate defect configuration in Si studied by in situ HREM irradiation / L Fedina ; A Gutakovskii ; A Aseev ; J Van Landuyt ; J Vanhellemont
A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wells / T Walther ; C J Humphreys ; A G Cullis ; D J Robbins
In-situ HREM irradiation study of point defect clustering in strained Ge[subscript x]Si[subscript 1-x]/(001)Si heterostructure / O Lebedev ; G Van Tendeloo
Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxy / H Tatsuoka ; P D Brown ; Y Xin ; K Isaji ; H Kuwabara ; Y Nakanishi ; T Nakamura ; H Fujiyasu
Atomic modelling and HREM-imaging of dislocations associated with steps at Si/Si(001) vicinal interfaces / A Y Belov ; D Conrad ; K Scheerschmidt ; U Gosele
The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imaging / C P Liu ; C B Boothroyd
Electron diffraction from cross-sectional semiconductor heterointerfaces using subnanometer electron probes / A Radefeld ; H Lakner
The use of electron holography for composition profiling of semiconductor heterostructures / P A Midgley ; J Barnard ; D Cherns
Dislocations and boundaries
Imaging dislocation kinks, their motion and pinning in Si / J C H Spence ; H R Kolar ; H Alexander
Analytical expression for the kink profile / M E Polyakov
Domain boundaries in epitaxial GaN grown on {111} B GaAs and GaP by molecular beam epitaxy / T S Cheng ; C T Foxon
Basal and non-basal dislocations in deformed aluminium nitride / V Feregotto ; A George ; J P Michel
Structure of the GaAs/InP interface obtained by wafer fusion / G Patriarche ; F Jeannes ; J L Oudar ; F Glas
Influence of light illumination on the rosette microstructure in indented GaAs and the photoplastic effect / S Koubaiti ; J J Couderc ; C Levade ; G Vanderschaeve
Epitaxial layers: defect behaviour and strain relief
Dislocation behaviour in strained layer interfaces / P J Goodhew ; G MacPherson
A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial Ge[subscript x]Si[subscript 1-x] on Si / P B Hirsch
Controlling misfit dislocation generation in strained layer epitaxy by point defect injection / M B Stirpe ; D D Perovic ; H L Lafontaine ; R D Goldberg
Defect distribution in compositionally graded epitaxial SiGe layers on Si substrates / K Lyutovich ; F Ernst ; F Banhart ; I Silier ; A Gutjahr ; M Konuma
On the growth of high quality relaxed Si[subscript 1-x]Ge[subscript x] layers on Si by vapour phase epitaxy / A J Pidduck ; D Wallis ; G M Williams ; A C Churchill ; J P Newey ; C Crumpton ; P W Smith
Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing / R Beanland ; M A Lourenco ; K P Homewood
Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffers / L Lazzarini ; C Ferrari ; S Gennari ; A Bosacchi ; S Franchi ; M Berti ; A V Drigo ; F Romanato ; G Salviati
The stacking faults in GaSb/(001)GaAs heterostructure / A M Rocher
Stacking fault trapezoids, stacking fault tubes and stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers / K K Fung ; N Wang ; I K Sou
Global plastic relaxation of strained-layer superlattices with non-compensated strains / E V K Rao ; A Ougazzaden
Critical thickness of quantum-well structures: modified Matthews-Blakeslee formula and experimental support gathered by means of synchroton x-ray reflection topography / P Mock ; B K Tanner ; G Lacey ; C R Whitehouse ; G W Smith
Crack interactions in tensile-strained epilayers / R T Murray ; C J Kiely ; M Hopkinson
Epitaxial layers: wide-bandgap nitrides
Structural characterisation of GaN layers: influence of polarity and strain release / J-L Rouviere ; M Arlery ; A Bourret
Polarity study by CBED of GaN films grown on (0001)[subscript Si] 6H-SiC / P Vermaut ; P Ruterana ; G Nouet ; A Salvador ; H Morkoc
The analysis of nanopipes and inversion domains in GaN thin films / W T Young ; M A Saunders ; F A Ponce ; S Nakamura
HREM study of the {1010} inversion domains in GaN grown on (0001) sapphire substrates / V Potin
Growth of GaN layers on nitrided GaAs/Si and GaAs/SIMOX composite substrates by OMVPE / Chimin Hu ; N T Nuhfer ; S Mahajan ; J W Yang ; C J Sun ; M Asif Khan ; H Temkin
Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescence / C Zanotti-Fregonara ; M Albrecht ; S Christiansen ; H P Strunk ; M Mayer ; A Pelzmann ; M Kamp ; K J Ebeling ; M D Bremser ; R F Davis ; Y G Shreter
Heteroepitaxy of cubic GaN: influence of interface structure / A Trampert ; O Brandt ; H Yang ; B Yang ; K H Ploog
Highly spatially resolved electron energy loss spectroscopy in the bandgap regime / U Bangert ; A Harvey ; R Keyse ; D Freundt
Developing a methodology for the electron energy-loss spectroscopy of defects in GaN / M K H Natusch ; G A Botton
Probing the effect of defects on band structure in GaN / D M Tricker
STEM characterisation of MOVPE-grown (In, Ga) N quantum wells / G Brockt ; C Mendorf ; F Scholz
TEM characterisation of GaN grown on sapphire / B Pecz ; M A di Forte-Poisson ; L Toth ; G Radnoczi
On the microstructure of GaN buffer layers grown at low temperatures on (0001) sapphire / H Selke ; S Einfeldt ; U Birkle ; D Hommel ; P L Ryder
Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire / A Mohammed ; C Trager-Cowan ; P G Middleton ; K P O'Donnell ; W Van Der Stricht ; I Moerman ; P Demeester
Epitaxial layers: general growth phenomena
Mechanisms of strain-induced surface ripple formation and dislocation multiplication in Si[subscript x]Ge[subscript 1-x] thin films / D E Jesson ; K M Chen ; S J Pennycook ; T Thundat ; R J Warmack
Kinetic critical thickness for morphological instability in GeSi/Si strained layer epitaxy / B Bahierathan ; H Lafontaine
Decomposition analysis of Ga[subscript x]In[subscript 1-x]As[subscript y]P[subscript 1-y] heterostructures by STEM / Q Liu ; F Schulze ; E Kubalek ; I Rechenberg ; A Knauer ; A Behres ; M Heuken ; K Heime
Investigations of ordering in AlGaInP / A Dunbar ; S Hall ; M Halsall
Structural characteristics of highly ordered (GaIn)P / J C Jiang ; A K Schaper ; Z Spika ; W Stolz ; P Werner
The effect of substrate misorientation on atomic ordering in Ga[subscript 0.52]In[subscript 0.48]P epilayers grown on GaAs (001) substrates by gas-source MBE / C Meenakarn ; A E Staton-Bevan ; M D Dawson ; G Duggan ; A H Kean ; S P Najda
Study of the structural and optical properties of ordered domains in GaInP alloys / L Nasi ; F Fermi ; L Francesio ; S Pellegrino
TEM and TED studies of order-induced GaInP heterostructures grown by organometallic vapour phase epitaxy / J H Kim ; T-Y Seong ; Y S Chun ; G B Stringfellow
TED, TEM and AFM studies comparing atomic ordering in InAs[subscript y]Sb[subscript 1-y] layers grown by MOVPE and MBE / T Y Seong ; G R Booker ; A G Norman ; P J F Harris
Twinning of As precipitates in LT-GaAs / Ch Dieker ; S Ruvimov ; H Sohn ; J Washburn ; Z Liliental-Weber
Features of excess arsenic precipitation in LT-GaAs delta-doped with indium / N A Bert ; V V Chaldyshev ; Yu G Musikhin
Transmission electron microscopy, x-ray diffraction and photoluminescence study of InGaAs/GaAs heterostructures / J Katcki ; K Reginski ; M Bugajski ; J Adamczewska ; W Lewandowski ; J Ratajczak ; W Rzodkiewicz ; J A Kozubowski
Transmission electron microscopy investigation of FeAs precipitates in GaAs/AlGaAs heterostructures / M Shiojiri ; T Isshiki ; K Nishio ; Y Yabuuchi ; N Y Jin-Phillipp
Characterisation of InPSb layers on different substrates (InAs or GaSb) / C von Eichel-Streiber
TEM and HRXRD study of high strain InAlGaAs heterolayers / N N Faleev
A TEM study of Cu-In-Se thin films grown by molecular beam epitaxy / S B Lin ; G L Gu ; B H Tseng
Structural investigations of epitaxial CdMgSe/InAs(001) heterostructures / Th Walter ; Th Litz ; A Waag ; G Landwehr
Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlattice / F Fischer ; R Gall ; G. Landwehr
Growth of SiC layers on off-axis 4H-SiC substrates / C Hallin ; E Janzen
Self-organised and quantum domain structures
Self-organisation and defect mechanisms in heteroepitaxial growth / W Dorsch
Self-organisation processes in InSb quantum dots grown on InP(001) by ALMBE / J C Ferrer ; F Peiro ; A Cornet ; J R Morante ; T Utzmeier ; G Armelles ; F Briones
TEM and PL studies of self-assembling quantum dots / M K Zundel ; F Phillipp ; K Eberl
Strain-induced vertical ordering effects of islands in LPCVD-grown Si[subscript 1-x]Ge[subscript x]/Si-bilayer structures on Si(001) / K Tillmann ; B Rahmati ; H Trinkaus ; W Jager ; A Hartmann ; R Loo ; L Vescan ; K Urban
TEM assessment of the growth mode and strain state of capped InSb dots grown on InP (001) substrates
Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices / N J Mason ; M J Fisher ; J Richardson ; A Krier ; P J Walker
Microstructual characterisation of CdSe quantum dots prepared by various routes / R R Nayak ; J R Galsworthy ; P J Dobson
Application of the 113 weak beam imaging technique to the investigation of strain-induced InAs islands grown on InP and GaAs(001) by MBE / A Ponchet ; D Lacombe
Impact of the threading dislocations and residual stress on InAs islands grown on a (001) GaAs-on-Si pseudo-substrate relative to growth on standard GaAs / J M Gerard
Microstructure study of GaAs quantum wire superlattice / H Matsuhata ; X-L Wang ; M Ogura
Electron microscopy characterization of low-dimensional semiconductor structures grown on V-grooved substrates / A Gustafsson ; G Biasiol ; B Dwir ; F Reinhardt ; E Kapon
Quantitative analysis of Al[subscript 1-x]Ga[subscript x]As heterostructures using EELS / K Leifer ; P A Buffat
Orientation dependent growth of TmAs wires in GaAs grown by MBE / A C Wright ; M R Bennett ; K E Singer
TEM and HREM structural studies of non-lithographically-produced CdS nanowires / D Routkevitch ; A Albu-Yaron ; M Moskovitz
Processed silicon, diamond and specimen preparation methods
TEM studies of processed Si device materials / H Bender
Two- and three-dimensional characterisation of advanced LOCOS isolation using transmission electron microscopy / D J Bazley ; S K Jones ; B Scaife
Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces / J M Bonar ; J Schiz ; P Ashburn
The effects of fluorine on the epitaxial regrowth of arsenic-doped amorphous silicon and polysilicon and of chlorine on the epitaxial regrowth of arsenic-doped polysilicon / C D Marsh ; N E Moiseiwitsch
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen / S Frabboni ; F Gambetta ; R Tonini ; R Balboni ; A Armigliato
TEM characterisation of carbon ion implantation into epitaxial Si[subscript 1-x]Ge[subscript x] / A Romano-Rodriguez ; A Perez-Rodriguez ; C Serre ; L Calvo-Barrio ; A Bachrouri ; O Gonzalez-Varona ; R Kogler ; W Skorupa
Polycrystalline silicon grain structure in VLSI devices / R Lindsay ; J N Chapman ; A J Craven ; D McBain
Structural and electronic properties of partially crystallised silicon / J P Smith ; W Eccleston
Microstructure study of pure hydrogen RF-sputtered microcrystallized silicon thin films / F Gourbilleau ; A Achiq ; P Voivenel ; R Rizk
The effect of doping and formation conditions on the microstructure of porous silicon
Temperature mapping of polysilicon microheaters using Raman micro-spectroscopy / M Bowden ; D J Gardiner ; A A Parr ; R T Carline ; R J Bozeat ; R J T Bunyan ; M Ward
Development of a mechanical polysilicon layer for surface machined microelectromechanical systems using TEM, SEM, and Raman spectroscopy / D O King ; M C Ward ; D Gardiner
Dislocation structure in interfaces of bonded hydrophobic silicon wafers: experiment and molecular dynamics / M Reiche ; R Scholz ; A Plossl ; K N Tu
Interfaces of CVD diamond films on silicon (001) / D Wittorf ; C L Jia ; A Floter ; H Guttler ; R Zachai
Synchrotron x-ray reticulography: a versatile new technique for mapping misorientations in single crystals / A R Lang ; A P W Makepeace
The use of transmitted color and interference fringes for TEM sample preparation of silicon / J P McCaffrey
Cross-sectional transmission electron microscopy and focused ion beam study of advanced silicon devices / P Roussel
Preparing TEM sections by FIB: stress relief to straighten warping membranes / J F Walker
Surface damage of semiconductor TEM samples prepared by focused ion beams / R F Broom
Ion energy effect on surface amorphisation of semiconductor crystals / A Barna
The effects of surface relaxation and ion thinning on [delta]-doped semiconductor cross-sections
Silicides and contacts
Practical epitaxial silicide technologies for ULSI applications / R T Tung ; K Inoue
Micro-characterisation of Pt-silicides prepared on (100) silicon / S Jin ; R A Donaton ; K Maex
In situ TEM study of the evolution of CoSi[subscript 2] precipitates during annealing and ion irradiation / M Palard ; M-O Ruault ; H Bernas ; M Strobel ; K-H Heinig
Heteroepitaxial Si/ErSi[subscript 2]/Si structures grown in high vacuum / A Travlos ; E Flouda ; A Aloupogiannis ; N Salamouras
Radiation enhanced diffusion of ion implanted Fe in Si (100) observed in ion beam synthesis of [beta]-FeSi[subscript 2] / Y Maeda ; T Fujita ; K Umezawa ; K Miyake
Application of image filtering to semiconductor structures / P L Flaitz ; A Domenicucci
Tungsten and tungsten nitride Schottky contacts to 4H-SiC / A Sulyok ; O Noblanc ; C Arnodo ; S Cassette ; C Brylinski
Bulk compounds
Distribution of Fe and extended defects in Fe-implanted InP / C Frigeri ; A Carnera ; B Fraboni ; A Gasparotto ; F Priolo ; A Camporese ; G Rossetto
Influence of doping on the native acceptors of gallium antimonide / P Hidalgo ; B Mendez ; J Piqueras ; P S Dutta ; E Dieguez
Effect of high implantation temperatures on defect formation in 6H-SiC / A A Suvorova ; O I Lebedev ; A V Suvorov ; I O Usov
X-ray topography of single crystal zinc germanium phosphide / M K Saker ; A M Keir ; A W Vere ; L L Taylor
Electronic devices
Mechanisms of breakdown in semi-insulating GaAs detectors under high reverse bias conditions studied by EBIC and OBIC / M Mazzer ; A Cola ; L Vasanelli ; M De Vittorio ; C Pennetta ; L Reggiani
The impact of structural non-uniformity on the operation of (Al[subscript y]Ga[subscript 1-y])[subscript x]In[subscript 1-x]P quantum well lasers at high strain / P C Mogensen ; S A Hall ; P Dawson ; P M Smowton ; P Blood
EBIC and TEM investigations of laser heterostructures grown on linearly-graded and step-graded buffer layers / M J Romero ; F J Pacheco ; D Gonzalez ; T C Rojas ; D Araujo ; S I Molina ; R Garcia
TEM observation of degraded InGaAsP MQW laser diodes / T Matsuda ; T Namegaya ; A Kasukawa ; Y Ikegami ; N Tsukiji ; T Ijichi ; F Iwase
Atomic processes at the laser front facet during laser operation / U Richter ; A Klein ; W Hoppner ; J Maege ; G Beister ; M Weyers
Application of secondary electron dopant contrast imaging to InP/InGaAsP laser structures / C P Sealy ; M R Castell ; C L Reynolds ; P R Wilshaw
Degradation of electron-beam-pumped Zn[subscript 1-x]Cd[subscript x]Se/ZnSe GRINSCH blue-green lasers / J-M Bonard ; J-D Ganiere ; D Herve ; L Vanzetti ; J J Paggel ; L Sorba ; E Molva ; A Franciosi
Degradation dynamics of II-VI (ZnCdSe) quantum well materials using confocal photoluminescence microscopy / D T Fewer ; C Jordan ; S J Hewlett ; E M McCabe ; F P Logue ; J F Donegan ; J Hegarty ; S Taniguchi ; T Hino ; K Nakano ; A Ishibashi
Antiphase boundaries in GaAs/Ge solar cells / C Hardingham ; D B Holt ; B Raza
EBIC and cathodoluminescence studies of grain boundary and interface phenomena in CdTe/CdS solar cells / S A Galloway ; P R Edwards ; K Durose
A study of the activation of CdTe/CdS thin film solar cells using OBIC
REBIC studies of electrical barriers in varistor ZnO / D Halls ; C Leach ; J D Russell
Electron microscopy analysis of the RGTO technique for high sensitivity gas sensor development / A Dieguez ; P Nelli ; L E Depero ; L Sangaletti ; G Sberveglieri
Scanning probe microscopy
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies / I Goldfarb ; J H G Owen ; P T Hayden ; K Miki ; G A D Briggs
Measurement of silicon wafer roughness by atomic force microscopy: an interlaboratory comparison / A B J Smout ; P Wagner ; M Suhren ; D C Gupta ; S Yang
AFM investigations of the influence of the doping process on the structure of LPCVD-silicon films / H Gold ; J Lutz ; F Kuchar ; M Pippan ; H Noll
Structural studies of InGaAsP/InP-based lasers using cross-sectional atomic-force microscopy (XAFM) and selective etching / T Kallstenius ; U Smith ; B Stoltz
A k-space transport analysis of the BEEM spectroscopy of Au/Si Schottky barriers / U Hohenester ; P Kocevar ; P de Andres ; F Flores
A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors / R L Van Meirhaeghe ; G M Vanalme ; L Goubert ; F Cardon ; P Van Daele
Advanced scanning electron and optical microscopy
Carrier recombination at defects in silicon: the effect of transition metals and hydrogen passivation / A M Blood ; C F Braban
EBIC studies of the electrical barriers in striated ZnS platelets exhibiting the anomalous photovoltaic effect / Y Brada
A reassessment of Te-doped GaAs / J L Weyher ; J Jimenez ; P Martin
REBIC studies of grain boundaries in II-VI compounds / A Wojcik
Dependence of electron-hole generation function on EBIC contrast of defects
Cathodoluminescence and EBIC of 2D junction laser structures on patterned (311)A GaAs substrates / C E Norman ; A J North ; J H Burroughes ; T Burke ; D A Ritchie
Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe / J Schreiber ; H Uniewski ; S Hildebrandt ; L Horing ; H S Leipner
The role of scanning cathodoluminescence in the development of MOVPE growth of GaAs/AlGaAs V-groove quantum wires / M Steer ; M S Skolnick ; J S Roberts
Cathodoluminescence studies of striated ZnS platelets and related II-VI crystals / S Mardix
Cathodoluminescence study of ZnMgSSe/GaAs heterostructures / A Meinert ; H Kalisch
Electric field dependence of the lateral cathodoluminescence intensity and electron-beam induced current distribution in a GaAs-AlAs single quantum well / U Jahn ; J Menniger ; H Kostial ; R Hey ; H T Grahn
SEM-CL of high quality polycrystalline CVD and high pressure synthetic diamond / S J Sharp ; A T Collins
Recombination properties of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures: a cathodoluminescence study / N Fossaert ; S Dassonneville ; B Sieber ; J L Lorriaux
Low temperature spectral cathodoluminescence study of InGaAs/InP quantum dot-like and quantum wire-like structures / C Rigo ; A Stano
Advanced scanning near-field optical microscopy of semiconducting materials and devices / R M Cramer ; R Heiderhoff ; J Selbeck ; L J Balk
Non-destructive measurement of bulk inhomogeneities in silicon using the scanning infra-red microscope / L Mule'Stagno ; A Bazzali ; M Olmo ; P Torok ; R Falster ; P Fraundorf
Subject Index
Author Index
Preface
Electron centenary symposium
The materials basis behind the telecommunications revolution / W F Brinkman
5.

図書

図書
edited by M.C. Tringides
出版情報: New York : Plenum Press, c1997  xi, 724 p. ; 26 cm
シリーズ名: NATO ASI series ; Series B . Physics ; v. 360
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目次情報: 続きを見る
Single-Atom Diffusion: A Local View of Bonding and Diffusion / P.J. Feibelman
Surface Diffusion and Epitaxy: Nucleation and Submonolayer Growth: Density-Functional Theory of Surface Diffusion and Epitaxial Growth of Metals / C. Ratsch, et al.
Multilayer Growth: LEED Investigaton of Surface Processes / M. Henzler
Surfactants and Growth Manipulation: Nucleation and Growth of Coherent Quantum Dots: A Mean Field Theory / H.T. Dobbs, et al.
Diffusion and Evolution of Large Clusters: Obtaining Thermodynamic Information from Kinetic Measurements: Island Shape, Evaporation, and Coarsening / H.I. Metiu
Collective Diffusion: Equilibrium Measurements: The Fluctuation Method Past, Present and Future / R. Gomer
Profile Evolution Measurements: Surface Diffusion and Phase Transitions: Substrate Effects in Surface Diffusion: Role of Vibrations: Study of Surface Diffusion Through Langevin Dynamics / S.C. Ying
Tunneling Effects: Far from Equilibrium Diffusion: Domain Ordering Kinetics: Studies of Surface Diffusion under Non-Equilibrium Conditions / I. Vattulainen, et al.
Diffusion in Inhomogeneous Systems: Diffusion and Other Atomistic Processes: Low Energy Deposition of 111In on Cu(1711) Surfaces / C.R. Laurens, et al.
57 Additional Articles
Author Index
Subject Index
Single-Atom Diffusion: A Local View of Bonding and Diffusion / P.J. Feibelman
Surface Diffusion and Epitaxy: Nucleation and Submonolayer Growth: Density-Functional Theory of Surface Diffusion and Epitaxial Growth of Metals / C. Ratsch, et al.
Multilayer Growth: LEED Investigaton of Surface Processes / M. Henzler
6.

図書

図書
editors Luc T. Wille ... [et al.]
出版情報: Warrendale, Pa. : Materials Research Society, 1998  ix, 278 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 528
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7.

図書

図書
editors, Eugene A. Fitzgerald, Derek C. Houghton, Patricia M. Mooney
出版情報: Warrendale, Pa. : Materials Research Society, c1998  xi, 377 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 533
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8.

図書

図書
editors: Martin Kuball ... [et al.]
出版情報: Warrendale, Pa. : Materials Research Society, c2006  xxv, 858 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 892
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9.

図書

図書
editors: Philippe Bergonzo ... [et al.]
出版情報: Warrendale, Pa. : Materials Research Society, c2007  xi, 283 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 956
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10.

図書

図書
edited by A.T. Macrander, T.J. Drummond
出版情報: Pennington, NJ : Electrochemical Society, c1989  viii, 395 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 89-5
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