| Preface |
| Electron centenary symposium |
| The materials basis behind the telecommunications revolution / W F Brinkman |
| The evolution of electron beam lithography and metrology for semiconductor technologies / T Matsuo |
| High resolution microscopy and nanoscale analysis |
| The structures of extended defects in Si and other materials studied by HRTEM / S Takeda |
| Defect structure of InSb grown within a synthetic opal matrix / V N Bogomolov ; J L Hutchison ; S M Samoilovich ; D A Kurdyukov ; J Sloan ; L M Sorokin ; G Wakefield |
| Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images / A Rosenauer ; T Remmele ; U Fischer ; A Forster ; D Gerthsen |
| New intermediate defect configuration in Si studied by in situ HREM irradiation / L Fedina ; A Gutakovskii ; A Aseev ; J Van Landuyt ; J Vanhellemont |
| A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wells / T Walther ; C J Humphreys ; A G Cullis ; D J Robbins |
| In-situ HREM irradiation study of point defect clustering in strained Ge[subscript x]Si[subscript 1-x]/(001)Si heterostructure / O Lebedev ; G Van Tendeloo |
| Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxy / H Tatsuoka ; P D Brown ; Y Xin ; K Isaji ; H Kuwabara ; Y Nakanishi ; T Nakamura ; H Fujiyasu |
| Atomic modelling and HREM-imaging of dislocations associated with steps at Si/Si(001) vicinal interfaces / A Y Belov ; D Conrad ; K Scheerschmidt ; U Gosele |
| The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imaging / C P Liu ; C B Boothroyd |
| Electron diffraction from cross-sectional semiconductor heterointerfaces using subnanometer electron probes / A Radefeld ; H Lakner |
| The use of electron holography for composition profiling of semiconductor heterostructures / P A Midgley ; J Barnard ; D Cherns |
| Dislocations and boundaries |
| Imaging dislocation kinks, their motion and pinning in Si / J C H Spence ; H R Kolar ; H Alexander |
| Analytical expression for the kink profile / M E Polyakov |
| Domain boundaries in epitaxial GaN grown on {111} B GaAs and GaP by molecular beam epitaxy / T S Cheng ; C T Foxon |
| Basal and non-basal dislocations in deformed aluminium nitride / V Feregotto ; A George ; J P Michel |
| Structure of the GaAs/InP interface obtained by wafer fusion / G Patriarche ; F Jeannes ; J L Oudar ; F Glas |
| Influence of light illumination on the rosette microstructure in indented GaAs and the photoplastic effect / S Koubaiti ; J J Couderc ; C Levade ; G Vanderschaeve |
| Epitaxial layers: defect behaviour and strain relief |
| Dislocation behaviour in strained layer interfaces / P J Goodhew ; G MacPherson |
| A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial Ge[subscript x]Si[subscript 1-x] on Si / P B Hirsch |
| Controlling misfit dislocation generation in strained layer epitaxy by point defect injection / M B Stirpe ; D D Perovic ; H L Lafontaine ; R D Goldberg |
| Defect distribution in compositionally graded epitaxial SiGe layers on Si substrates / K Lyutovich ; F Ernst ; F Banhart ; I Silier ; A Gutjahr ; M Konuma |
| On the growth of high quality relaxed Si[subscript 1-x]Ge[subscript x] layers on Si by vapour phase epitaxy / A J Pidduck ; D Wallis ; G M Williams ; A C Churchill ; J P Newey ; C Crumpton ; P W Smith |
| Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing / R Beanland ; M A Lourenco ; K P Homewood |
| Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffers / L Lazzarini ; C Ferrari ; S Gennari ; A Bosacchi ; S Franchi ; M Berti ; A V Drigo ; F Romanato ; G Salviati |
| The stacking faults in GaSb/(001)GaAs heterostructure / A M Rocher |
| Stacking fault trapezoids, stacking fault tubes and stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers / K K Fung ; N Wang ; I K Sou |
| Global plastic relaxation of strained-layer superlattices with non-compensated strains / E V K Rao ; A Ougazzaden |
| Critical thickness of quantum-well structures: modified Matthews-Blakeslee formula and experimental support gathered by means of synchroton x-ray reflection topography / P Mock ; B K Tanner ; G Lacey ; C R Whitehouse ; G W Smith |
| Crack interactions in tensile-strained epilayers / R T Murray ; C J Kiely ; M Hopkinson |
| Epitaxial layers: wide-bandgap nitrides |
| Structural characterisation of GaN layers: influence of polarity and strain release / J-L Rouviere ; M Arlery ; A Bourret |
| Polarity study by CBED of GaN films grown on (0001)[subscript Si] 6H-SiC / P Vermaut ; P Ruterana ; G Nouet ; A Salvador ; H Morkoc |
| The analysis of nanopipes and inversion domains in GaN thin films / W T Young ; M A Saunders ; F A Ponce ; S Nakamura |
| HREM study of the {1010} inversion domains in GaN grown on (0001) sapphire substrates / V Potin |
| Growth of GaN layers on nitrided GaAs/Si and GaAs/SIMOX composite substrates by OMVPE / Chimin Hu ; N T Nuhfer ; S Mahajan ; J W Yang ; C J Sun ; M Asif Khan ; H Temkin |
| Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescence / C Zanotti-Fregonara ; M Albrecht ; S Christiansen ; H P Strunk ; M Mayer ; A Pelzmann ; M Kamp ; K J Ebeling ; M D Bremser ; R F Davis ; Y G Shreter |
| Heteroepitaxy of cubic GaN: influence of interface structure / A Trampert ; O Brandt ; H Yang ; B Yang ; K H Ploog |
| Highly spatially resolved electron energy loss spectroscopy in the bandgap regime / U Bangert ; A Harvey ; R Keyse ; D Freundt |
| Developing a methodology for the electron energy-loss spectroscopy of defects in GaN / M K H Natusch ; G A Botton |
| Probing the effect of defects on band structure in GaN / D M Tricker |
| STEM characterisation of MOVPE-grown (In, Ga) N quantum wells / G Brockt ; C Mendorf ; F Scholz |
| TEM characterisation of GaN grown on sapphire / B Pecz ; M A di Forte-Poisson ; L Toth ; G Radnoczi |
| On the microstructure of GaN buffer layers grown at low temperatures on (0001) sapphire / H Selke ; S Einfeldt ; U Birkle ; D Hommel ; P L Ryder |
| Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire / A Mohammed ; C Trager-Cowan ; P G Middleton ; K P O'Donnell ; W Van Der Stricht ; I Moerman ; P Demeester |
| Epitaxial layers: general growth phenomena |
| Mechanisms of strain-induced surface ripple formation and dislocation multiplication in Si[subscript x]Ge[subscript 1-x] thin films / D E Jesson ; K M Chen ; S J Pennycook ; T Thundat ; R J Warmack |
| Kinetic critical thickness for morphological instability in GeSi/Si strained layer epitaxy / B Bahierathan ; H Lafontaine |
| Decomposition analysis of Ga[subscript x]In[subscript 1-x]As[subscript y]P[subscript 1-y] heterostructures by STEM / Q Liu ; F Schulze ; E Kubalek ; I Rechenberg ; A Knauer ; A Behres ; M Heuken ; K Heime |
| Investigations of ordering in AlGaInP / A Dunbar ; S Hall ; M Halsall |
| Structural characteristics of highly ordered (GaIn)P / J C Jiang ; A K Schaper ; Z Spika ; W Stolz ; P Werner |
| The effect of substrate misorientation on atomic ordering in Ga[subscript 0.52]In[subscript 0.48]P epilayers grown on GaAs (001) substrates by gas-source MBE / C Meenakarn ; A E Staton-Bevan ; M D Dawson ; G Duggan ; A H Kean ; S P Najda |
| Study of the structural and optical properties of ordered domains in GaInP alloys / L Nasi ; F Fermi ; L Francesio ; S Pellegrino |
| TEM and TED studies of order-induced GaInP heterostructures grown by organometallic vapour phase epitaxy / J H Kim ; T-Y Seong ; Y S Chun ; G B Stringfellow |
| TED, TEM and AFM studies comparing atomic ordering in InAs[subscript y]Sb[subscript 1-y] layers grown by MOVPE and MBE / T Y Seong ; G R Booker ; A G Norman ; P J F Harris |
| Twinning of As precipitates in LT-GaAs / Ch Dieker ; S Ruvimov ; H Sohn ; J Washburn ; Z Liliental-Weber |
| Features of excess arsenic precipitation in LT-GaAs delta-doped with indium / N A Bert ; V V Chaldyshev ; Yu G Musikhin |
| Transmission electron microscopy, x-ray diffraction and photoluminescence study of InGaAs/GaAs heterostructures / J Katcki ; K Reginski ; M Bugajski ; J Adamczewska ; W Lewandowski ; J Ratajczak ; W Rzodkiewicz ; J A Kozubowski |
| Transmission electron microscopy investigation of FeAs precipitates in GaAs/AlGaAs heterostructures / M Shiojiri ; T Isshiki ; K Nishio ; Y Yabuuchi ; N Y Jin-Phillipp |
| Characterisation of InPSb layers on different substrates (InAs or GaSb) / C von Eichel-Streiber |
| TEM and HRXRD study of high strain InAlGaAs heterolayers / N N Faleev |
| A TEM study of Cu-In-Se thin films grown by molecular beam epitaxy / S B Lin ; G L Gu ; B H Tseng |
| Structural investigations of epitaxial CdMgSe/InAs(001) heterostructures / Th Walter ; Th Litz ; A Waag ; G Landwehr |
| Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlattice / F Fischer ; R Gall ; G. Landwehr |
| Growth of SiC layers on off-axis 4H-SiC substrates / C Hallin ; E Janzen |
| Self-organised and quantum domain structures |
| Self-organisation and defect mechanisms in heteroepitaxial growth / W Dorsch |
| Self-organisation processes in InSb quantum dots grown on InP(001) by ALMBE / J C Ferrer ; F Peiro ; A Cornet ; J R Morante ; T Utzmeier ; G Armelles ; F Briones |
| TEM and PL studies of self-assembling quantum dots / M K Zundel ; F Phillipp ; K Eberl |
| Strain-induced vertical ordering effects of islands in LPCVD-grown Si[subscript 1-x]Ge[subscript x]/Si-bilayer structures on Si(001) / K Tillmann ; B Rahmati ; H Trinkaus ; W Jager ; A Hartmann ; R Loo ; L Vescan ; K Urban |
| TEM assessment of the growth mode and strain state of capped InSb dots grown on InP (001) substrates |
| Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices / N J Mason ; M J Fisher ; J Richardson ; A Krier ; P J Walker |
| Microstructual characterisation of CdSe quantum dots prepared by various routes / R R Nayak ; J R Galsworthy ; P J Dobson |
| Application of the 113 weak beam imaging technique to the investigation of strain-induced InAs islands grown on InP and GaAs(001) by MBE / A Ponchet ; D Lacombe |
| Impact of the threading dislocations and residual stress on InAs islands grown on a (001) GaAs-on-Si pseudo-substrate relative to growth on standard GaAs / J M Gerard |
| Microstructure study of GaAs quantum wire superlattice / H Matsuhata ; X-L Wang ; M Ogura |
| Electron microscopy characterization of low-dimensional semiconductor structures grown on V-grooved substrates / A Gustafsson ; G Biasiol ; B Dwir ; F Reinhardt ; E Kapon |
| Quantitative analysis of Al[subscript 1-x]Ga[subscript x]As heterostructures using EELS / K Leifer ; P A Buffat |
| Orientation dependent growth of TmAs wires in GaAs grown by MBE / A C Wright ; M R Bennett ; K E Singer |
| TEM and HREM structural studies of non-lithographically-produced CdS nanowires / D Routkevitch ; A Albu-Yaron ; M Moskovitz |
| Processed silicon, diamond and specimen preparation methods |
| TEM studies of processed Si device materials / H Bender |
| Two- and three-dimensional characterisation of advanced LOCOS isolation using transmission electron microscopy / D J Bazley ; S K Jones ; B Scaife |
| Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces / J M Bonar ; J Schiz ; P Ashburn |
| The effects of fluorine on the epitaxial regrowth of arsenic-doped amorphous silicon and polysilicon and of chlorine on the epitaxial regrowth of arsenic-doped polysilicon / C D Marsh ; N E Moiseiwitsch |
| Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen / S Frabboni ; F Gambetta ; R Tonini ; R Balboni ; A Armigliato |
| TEM characterisation of carbon ion implantation into epitaxial Si[subscript 1-x]Ge[subscript x] / A Romano-Rodriguez ; A Perez-Rodriguez ; C Serre ; L Calvo-Barrio ; A Bachrouri ; O Gonzalez-Varona ; R Kogler ; W Skorupa |
| Polycrystalline silicon grain structure in VLSI devices / R Lindsay ; J N Chapman ; A J Craven ; D McBain |
| Structural and electronic properties of partially crystallised silicon / J P Smith ; W Eccleston |
| Microstructure study of pure hydrogen RF-sputtered microcrystallized silicon thin films / F Gourbilleau ; A Achiq ; P Voivenel ; R Rizk |
| The effect of doping and formation conditions on the microstructure of porous silicon |
| Temperature mapping of polysilicon microheaters using Raman micro-spectroscopy / M Bowden ; D J Gardiner ; A A Parr ; R T Carline ; R J Bozeat ; R J T Bunyan ; M Ward |
| Development of a mechanical polysilicon layer for surface machined microelectromechanical systems using TEM, SEM, and Raman spectroscopy / D O King ; M C Ward ; D Gardiner |
| Dislocation structure in interfaces of bonded hydrophobic silicon wafers: experiment and molecular dynamics / M Reiche ; R Scholz ; A Plossl ; K N Tu |
| Interfaces of CVD diamond films on silicon (001) / D Wittorf ; C L Jia ; A Floter ; H Guttler ; R Zachai |
| Synchrotron x-ray reticulography: a versatile new technique for mapping misorientations in single crystals / A R Lang ; A P W Makepeace |
| The use of transmitted color and interference fringes for TEM sample preparation of silicon / J P McCaffrey |
| Cross-sectional transmission electron microscopy and focused ion beam study of advanced silicon devices / P Roussel |
| Preparing TEM sections by FIB: stress relief to straighten warping membranes / J F Walker |
| Surface damage of semiconductor TEM samples prepared by focused ion beams / R F Broom |
| Ion energy effect on surface amorphisation of semiconductor crystals / A Barna |
| The effects of surface relaxation and ion thinning on [delta]-doped semiconductor cross-sections |
| Silicides and contacts |
| Practical epitaxial silicide technologies for ULSI applications / R T Tung ; K Inoue |
| Micro-characterisation of Pt-silicides prepared on (100) silicon / S Jin ; R A Donaton ; K Maex |
| In situ TEM study of the evolution of CoSi[subscript 2] precipitates during annealing and ion irradiation / M Palard ; M-O Ruault ; H Bernas ; M Strobel ; K-H Heinig |
| Heteroepitaxial Si/ErSi[subscript 2]/Si structures grown in high vacuum / A Travlos ; E Flouda ; A Aloupogiannis ; N Salamouras |
| Radiation enhanced diffusion of ion implanted Fe in Si (100) observed in ion beam synthesis of [beta]-FeSi[subscript 2] / Y Maeda ; T Fujita ; K Umezawa ; K Miyake |
| Application of image filtering to semiconductor structures / P L Flaitz ; A Domenicucci |
| Tungsten and tungsten nitride Schottky contacts to 4H-SiC / A Sulyok ; O Noblanc ; C Arnodo ; S Cassette ; C Brylinski |
| Bulk compounds |
| Distribution of Fe and extended defects in Fe-implanted InP / C Frigeri ; A Carnera ; B Fraboni ; A Gasparotto ; F Priolo ; A Camporese ; G Rossetto |
| Influence of doping on the native acceptors of gallium antimonide / P Hidalgo ; B Mendez ; J Piqueras ; P S Dutta ; E Dieguez |
| Effect of high implantation temperatures on defect formation in 6H-SiC / A A Suvorova ; O I Lebedev ; A V Suvorov ; I O Usov |
| X-ray topography of single crystal zinc germanium phosphide / M K Saker ; A M Keir ; A W Vere ; L L Taylor |
| Electronic devices |
| Mechanisms of breakdown in semi-insulating GaAs detectors under high reverse bias conditions studied by EBIC and OBIC / M Mazzer ; A Cola ; L Vasanelli ; M De Vittorio ; C Pennetta ; L Reggiani |
| The impact of structural non-uniformity on the operation of (Al[subscript y]Ga[subscript 1-y])[subscript x]In[subscript 1-x]P quantum well lasers at high strain / P C Mogensen ; S A Hall ; P Dawson ; P M Smowton ; P Blood |
| EBIC and TEM investigations of laser heterostructures grown on linearly-graded and step-graded buffer layers / M J Romero ; F J Pacheco ; D Gonzalez ; T C Rojas ; D Araujo ; S I Molina ; R Garcia |
| TEM observation of degraded InGaAsP MQW laser diodes / T Matsuda ; T Namegaya ; A Kasukawa ; Y Ikegami ; N Tsukiji ; T Ijichi ; F Iwase |
| Atomic processes at the laser front facet during laser operation / U Richter ; A Klein ; W Hoppner ; J Maege ; G Beister ; M Weyers |
| Application of secondary electron dopant contrast imaging to InP/InGaAsP laser structures / C P Sealy ; M R Castell ; C L Reynolds ; P R Wilshaw |
| Degradation of electron-beam-pumped Zn[subscript 1-x]Cd[subscript x]Se/ZnSe GRINSCH blue-green lasers / J-M Bonard ; J-D Ganiere ; D Herve ; L Vanzetti ; J J Paggel ; L Sorba ; E Molva ; A Franciosi |
| Degradation dynamics of II-VI (ZnCdSe) quantum well materials using confocal photoluminescence microscopy / D T Fewer ; C Jordan ; S J Hewlett ; E M McCabe ; F P Logue ; J F Donegan ; J Hegarty ; S Taniguchi ; T Hino ; K Nakano ; A Ishibashi |
| Antiphase boundaries in GaAs/Ge solar cells / C Hardingham ; D B Holt ; B Raza |
| EBIC and cathodoluminescence studies of grain boundary and interface phenomena in CdTe/CdS solar cells / S A Galloway ; P R Edwards ; K Durose |
| A study of the activation of CdTe/CdS thin film solar cells using OBIC |
| REBIC studies of electrical barriers in varistor ZnO / D Halls ; C Leach ; J D Russell |
| Electron microscopy analysis of the RGTO technique for high sensitivity gas sensor development / A Dieguez ; P Nelli ; L E Depero ; L Sangaletti ; G Sberveglieri |
| Scanning probe microscopy |
| Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies / I Goldfarb ; J H G Owen ; P T Hayden ; K Miki ; G A D Briggs |
| Measurement of silicon wafer roughness by atomic force microscopy: an interlaboratory comparison / A B J Smout ; P Wagner ; M Suhren ; D C Gupta ; S Yang |
| AFM investigations of the influence of the doping process on the structure of LPCVD-silicon films / H Gold ; J Lutz ; F Kuchar ; M Pippan ; H Noll |
| Structural studies of InGaAsP/InP-based lasers using cross-sectional atomic-force microscopy (XAFM) and selective etching / T Kallstenius ; U Smith ; B Stoltz |
| A k-space transport analysis of the BEEM spectroscopy of Au/Si Schottky barriers / U Hohenester ; P Kocevar ; P de Andres ; F Flores |
| A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors / R L Van Meirhaeghe ; G M Vanalme ; L Goubert ; F Cardon ; P Van Daele |
| Advanced scanning electron and optical microscopy |
| Carrier recombination at defects in silicon: the effect of transition metals and hydrogen passivation / A M Blood ; C F Braban |
| EBIC studies of the electrical barriers in striated ZnS platelets exhibiting the anomalous photovoltaic effect / Y Brada |
| A reassessment of Te-doped GaAs / J L Weyher ; J Jimenez ; P Martin |
| REBIC studies of grain boundaries in II-VI compounds / A Wojcik |
| Dependence of electron-hole generation function on EBIC contrast of defects |
| Cathodoluminescence and EBIC of 2D junction laser structures on patterned (311)A GaAs substrates / C E Norman ; A J North ; J H Burroughes ; T Burke ; D A Ritchie |
| Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe / J Schreiber ; H Uniewski ; S Hildebrandt ; L Horing ; H S Leipner |
| The role of scanning cathodoluminescence in the development of MOVPE growth of GaAs/AlGaAs V-groove quantum wires / M Steer ; M S Skolnick ; J S Roberts |
| Cathodoluminescence studies of striated ZnS platelets and related II-VI crystals / S Mardix |
| Cathodoluminescence study of ZnMgSSe/GaAs heterostructures / A Meinert ; H Kalisch |
| Electric field dependence of the lateral cathodoluminescence intensity and electron-beam induced current distribution in a GaAs-AlAs single quantum well / U Jahn ; J Menniger ; H Kostial ; R Hey ; H T Grahn |
| SEM-CL of high quality polycrystalline CVD and high pressure synthetic diamond / S J Sharp ; A T Collins |
| Recombination properties of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures: a cathodoluminescence study / N Fossaert ; S Dassonneville ; B Sieber ; J L Lorriaux |
| Low temperature spectral cathodoluminescence study of InGaAs/InP quantum dot-like and quantum wire-like structures / C Rigo ; A Stano |
| Advanced scanning near-field optical microscopy of semiconducting materials and devices / R M Cramer ; R Heiderhoff ; J Selbeck ; L J Balk |
| Non-destructive measurement of bulk inhomogeneities in silicon using the scanning infra-red microscope / L Mule'Stagno ; A Bazzali ; M Olmo ; P Torok ; R Falster ; P Fraundorf |
| Subject Index |
| Author Index |
