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1.

図書

図書
edited by Shuji Nakamura and Shigefusa F. Chichibu
出版情報: London : Taylor & Francis, 2000  372 p. ; 24 cm
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Basics Physics and Materials Technology of GaN LEDs and LDs / Steven P. DenBaars1.:
Introduction / 1.1:
Historical Evolution of LED Technology / 1.1.1:
Basic Physics of LEDs: Injection Luminescence / 1.2:
Direct and Indirect Band-Gap Material / 1.2.1:
Radiative Recombination / 1.2.2:
External Quantum Efficiency / 1.2.3:
Luminous Efficiency / 1.2.4:
Injection Efficiency / 1.2.5:
Heterojunction vs. Homojunction LED Materials / 1.2.6:
Quantum Well LEDs / 1.2.7:
LED Materials Selection / 1.3:
Energy Band Structure/Lattice Constants / 1.3.1:
GaN Physical Properties / 1.3.2:
GaN Based LED Structures / 1.3.3:
Crystal Growth / 1.4:
MOCVD Growth / 1.4.1:
MOCVD Systems for Production / 1.4.2:
Molecular Beam Epitaxy (MBE) / 1.4.3:
Chloride Vapor Phase Epitaxy / 1.4.4:
Group-III Nitride Materials Growth Issues / 1.5:
Substrates / 1.5.1:
Nucleation Layer Technology / 1.5.2:
Growth and Doping of GaN / 1.5.3:
Growth of AlGaN and AlGaN/GaN Heterostructures / 1.5.4:
Growth of InGaN and InGaN/GaN Heterostructures / 1.5.5:
Conclusions / 1.6:
References / 1.7:
Theoretical Analysis of Optical Gain Spectra / Takeshi Uenoyama ; Masakatsu Suzuki2.:
Optical Gains Spectra by Many-Body Approach / 2.1:
Linear Response Theory / 2.2.1:
Screening Effects / 2.2.2:
Self-Energies of Electron Gas / 2.2.3:
Coulomb Enhancement / 2.2.4:
Electronic Band Structures / 2.3:
Electronic Band Structures of Bulk GaN and AlN / 2.3.1:
Strain Effect on Electronic Band Structures / 2.3.2:
k.p Theory for Wurtzite / 2.3.3:
Physical Parameters / 2.3.4:
Subband Structures of GaN/AlGaN Quantum Wells / 2.3.5:
Subband in Wurtzite Quantum Wells / 2.3.6:
Optical Gain Spectra of III-V Nitrides LD Structures / 2.4:
Free Carrier Model / 2.4.1:
Coulomb Enhancement (Excitonic Effects) in the Optical Gain / 2.4.2:
Optical Gain with Localized States / 2.4.3:
Electrical Conductivity Control / Chris G. Van de Walle2.5:
Doping / 3.1:
Theory of Native Defects and Impurities / 3.1.1:
n-type Doping / 3.1.2:
p-type Doping / 3.1.3:
Band Offsets / 3.2:
Theory of Band Offsets at Nitride Interfaces / 3.2.1:
Experimental Results for Band Offsets / 3.2.2:
Discussion / 3.2.3:
Acknowledgments / 3.3:
Crystal Defects and Device Performance in LEDs and LDs / Fernando A. Ponce3.4:
CrystalGrowth and Microstructure / 4.1:
Lattice Structure of the Nitride Semiconductors / 4.1.1:
Thin Film Epitaxy and Substrates / 4.1.2:
Epitaxy on SiC Substrates / 4.2:
Epitaxy on Sapphire Substrates / 4.3:
AlN as a Buffer Layer / 4.3.1:
GaN as a Buffer Layer / 4.3.2:
Homoepitaxial Growth of GaN / 4.4:
Defect Microstructurein LEDs and LDs / 4.5:
Large Defect Densities in High Performance Materials / 4.5.1:
Columnar Structure of GaN on Sapphire / 4.5.2:
Tilt Boundaries / 4.5.3:
Twist Boundaries / 4.5.4:
Polarity and Electronic Properties / 4.6:
The Nature of the Dislocation / 4.7:
Determination of the Burgers Vector / 4.7.1:
Nanopipes and Inversion Domains / 4.7.2:
Spatial Variation of Luminescence / 4.8:
Undoped Material / 4.8.1:
Doped Materials / 4.8.2:
Microscopic Properties of In[subscript x]Ga[subscript 1-x]N Quantum Wells / 4.9:
The Nature of the InGaN/GaN Interface / 4.9.1:
Microstructure of Quantum Wells / 4.9.2:
Spatial Variation of the luminescence of In[subscript x]Ga[subscript 1-x]N Quantum Wells / 4.9.3:
Microstructure and Device Performance / 4.10:
Stress and Point Defect Structure / 4.10.1:
Minimization of Strain by Maximizing Film Smoothness / 4.10.2:
The Role of Dislocations in Strain Relaxation / 4.10.3:
The Role of Nanopipes and Extension to ELOG Structures / 4.10.4:
Emission Mechanisms and Excitons in GaN and InGaN Bulk and QWs / Shigefusa F. Chichibu ; Yoichi Kawakami ; Takayuki Sota4.11:
GaN Bulk Crystals / 5.1:
Free and Bound Excitons / 5.2.1:
Biexcitons in GaN / 5.2.2:
Strain Effects / 5.2.3:
Phonons in Nitrides / 5.2.4:
InGaN Bulk and QWs for Practical Devices / 5.3:
Quantized Energy Levels / 5.3.1:
Piezoelectric Field / 5.3.2:
Spontaneous Emission of Localized Excitons / 5.3.3:
Localized Exciton Dynamics / 5.3.4:
Optical Gain in Nitrides / 5.3.5:
Life Testing and Degradation Mechanisms in InGaN LEDs / Marek Osinski ; Daniel L. Barton5.4:
Life Testing of InGaN/AlGaN/GaN LEDs / 6.1:
Life Testing Primer / 6.2.1:
Potential Degradation Regions in LEDs / 6.2.2:
Life Test System Considerations / 6.2.3:
Results of Life Tests on Nichia Blue InGaN/AlGaN/GaN Double Heterostructure LEDs / 6.2.4:
Analysis of Early Test Failures / 6.3:
Analysis of LED #19 / 6.3.1:
Analysis of LEDs #16 and 17 / 6.3.2:
Effects of UV Emission on Plastic Transparency / 6.4:
Thermal Degradation of Plastic Package Transparency / 6.5:
Degradation of GaN-Based LEDs Under High Current Stress / 6.6:
Double Heterostructure Device Testing / 6.7:
EBIC Analysis / 6.8:
Pulsed Current Stress Experiments and Results on Quantum Well LEDs / 6.9:
Failure Analysis of Degraded Quantum Well LEDs / 6.10:
Summary / 6.11:
Development and Future Prospects of GaN-based LEDs and LD / Shuji Nakamura6.13:
Properties of InGaN-based LEDs / 7.1:
Amber LEDs / 7.1.1:
UV/Blue/Green LEDs / 7.1.3:
Roles of Dislocations in InGaN-Based LEDs / 7.1.4:
LDs Grown on Sapphire Substrate / 7.2:
LDs Grown on Sapphire Substrates / 7.2.1:
ELOG Substrate / 7.2.3:
InGaN-Based LDs Grown on ELOG Substrates / 7.2.4:
LDs Grown on GaN Substrate / 7.3:
Free-Standing GaN Substrates / 7.3.1:
Characteristics of LDs / 7.3.2:
Future Prospects of InGaN-based Emitting Devices / 7.4:
Appendix / 7.5:
Parameters Table
Subject Index
Basics Physics and Materials Technology of GaN LEDs and LDs / Steven P. DenBaars1.:
Introduction / 1.1:
Historical Evolution of LED Technology / 1.1.1:
2.

図書

図書
G. H. B. Thompson
出版情報: Chichester [Eng.] ; New York : J. Wiley, c1980  xxv, 549 p. ; 24 cm
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3.

図書

図書
Shuji Nakamura, Gerhard Fasol
出版情報: Berlin ; Tokyo : Springer, c1997  xvi, 343 p. ; 24 cm
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4.

図書

図書
L.A. Coldren, S.W. Corzine
出版情報: New York : John Wiley & Sons, c1995  xxiii, 594 p. ; 25 cm
シリーズ名: Wiley series in microwave and optical engineering / Kai Chang, editor
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5.

図書

図書
edited by Motoichi Ohtsu
出版情報: New York : Wiley, c1996  xiii, 240 p. ; 25 cm
シリーズ名: Wiley series in microwave and optical engineering / Kai Chang, editor
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Near-Infrared Molecular Spectroscopy and Possible Frequency References for Frequency Control of Semiconductor Lasers / H. Sasada
High-Accuracy Spectroscopy with Semiconductor Lasers: Application to Laser Frequency Stabilization / L. Hollberg, et al.
Optical Frequency Comb Generators and Their Applications / M. Kourogi
Absolute Measurement of Optical Frequencies / H. Telle
Requirements and Practical Possibilities for Frequency Standards for the Optical Fiber Communication Bands / D. Knight
Present and Future Perspectives of Communication Technology Using Coherent Lightwaves / K. Nosu
Index
Near-Infrared Molecular Spectroscopy and Possible Frequency References for Frequency Control of Semiconductor Lasers / H. Sasada
High-Accuracy Spectroscopy with Semiconductor Lasers: Application to Laser Frequency Stabilization / L. Hollberg, et al.
Optical Frequency Comb Generators and Their Applications / M. Kourogi
6.

図書

図書
Weng W. Chow, Stephan W. Koch, Murray Sargent III
出版情報: Berlin ; New York : Springer-Verlag, c1994  xii, 497 p. ; 25 cm
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7.

図書

図書
edited by Y. Suematsu and A. R. Adams
出版情報: Tokyo : Ohmsha , London : Chapman & Hall, 1994  viii, 546 p. ; 26 cm
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8.

図書

図書
Motoichi Ohtsu
出版情報: Boston : Artech House, c1992  xi, 340 p. ; 24 cm
シリーズ名: The Artech House optoelectronics library
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Preface
Introduction / Chapter 1:
Requirements of Highly Coherent Semiconductor Lasers / 1.1:
Five Requirements to Be Met / 1.2:
Structure and Oscillation Mechanisms / Chapter 2:
Coherence of Light / 2.1:
Device Structures / 2.2:
Formulation of Laser Oscillation / 2.3:
Noise Characteristics / 2.4:
Intensity Noise / 2.4.1:
Frequency Noise / 2.4.2:
Coherence Deterioration Induced in Semiconductor Lasers by Specific Noise / 2.5:
Oscillation Instabilities Induced by Reflected Lightwaves / 2.5.1:
Mode-Hopping and Mode-Partition Noise / 2.5.2:
Optical Frequency Discriminators, Detections, and Modulations / Chapter 3:
Optical Frequency Demodulators / 3.1:
Noise Sources in the FM Noise Detection System / 3.2:
Modulation Characteristics of a Semiconductor Laser / 3.3:
FM Noise Reduction and Improvement of Frequency Accuracy / Chapter 4:
Center Frequency Stabilization of the Field Spectrum / 4.1:
Improvements in the Accuracy and Reproducibility of the Stabilized Laser Frequency / 4.2:
Wideband FM Noise Reduction / 4.3:
Negative Electrical Feedback / 4.3.1:
Injection Locking and Optical Feedback / 4.3.2:
Optical Phase Locking and Frequency Sweep / Chapter 5:
Optical Phase- and Frequency-Locked Loops / 5.1:
Heterodyne Optical Phase-Locked Loop / 5.1.1:
Homodyne Optical Phase-Locked Loop / 5.1.2:
Other Promising Techniques / 5.1.3:
Stable, Accurate, and Wideband Optical Frequency Sweep / 5.2:
Fine Frequency Sweep / 5.2.1:
Wideband Coarse Frequency Sweep / 5.2.2:
Applications of Highly Coherent Semiconductor Lasers / Chapter 6:
Optical Communication Systems / 6.1:
Optical Measurements / 6.2:
Passive Ring Resonator-Type Fiber Gyroscope / 6.2.1:
Velocity and Displacement Measurements / 6.2.2:
Photon Scanning Tunneling Microscope / 6.3:
Analytical Spectroscopy / 6.4:
Laser Radar (Lidar) / 6.4.1:
Isotope Separation and Analysis of Radicals / 6.4.2:
Optical Pumping of Atomic Clocks / 6.5:
Cesium Atomic Clock at 9.2 GHz / 6.5.1:
Rubidium Atomic Clock at 6.8 GHz / 6.5.2:
Quantum Optics and Basic Physics / 6.6:
High-Resolution Spectroscopy of Atoms and Molecules / 6.6.1:
Test of Basic Principles of Physics / 6.6.2:
Manipulations of Atoms and Ions / 6.6.3:
Cavity Quantum Electrodynamics (Cavity QED) / 6.6.4:
Toward the Future / Chapter 7:
Improvement in Device Structure / 7.1:
Advanced Longitudinal-Mode Controlled Lasers / 7.1.1:
Narrow-Linewidth Lasers / 7.1.2:
Wideband Frequency Sweep / 7.1.3:
Realization of Novel Lasing Wavelengths / 7.1.4:
High-Power Laser Devices / 7.1.5:
Reduction of Chirping / 7.1.6:
Expansion of the Lasing Frequency Range / 7.2:
Short-Wavelength Lasers / 7.2.1:
Stable, Wideband Optical Sweep Generators / 7.2.2:
Ultrafast Detection of Lightwaves, Waveform Conversion, and Optical-Frequency Counting Systems / 7.3:
Generation and Application of Nonclassical Photons / 7.4:
Photon Antibunching and the Properties of the Squeezed State of Light / 7.4.1:
Quantum Nondemolition Measurements / 7.4.2:
Control and Manipulation of Atoms and Photons / 7.5:
High-Power Lasers and Optical Energy Storage / 7.6:
Conclusion / Chapter 8:
Quantization of the Light Field / Appendix I:
Definitions of the Measures for Evaluating the FM Noise Magnitude / Appendix II:
Methods for Measuring FM Noise and the Allan Variance Real-Time Processing System / Appendix III:
Rate Equation and Relaxation Oscillation / Appendix IV:
Theoretical Analyses of Optical Phase-Locked Loops / Appendix V:
Index
Preface
Introduction / Chapter 1:
Requirements of Highly Coherent Semiconductor Lasers / 1.1:
9.

図書

図書
James J. Coleman, editor
出版情報: Bellingham, Wash., USA : SPIE Optical Engineering Press, 1992  xvii, 332 p. ; 28 cm
シリーズ名: SPIE milestone series / Brian J. Thompson, general editor ; v. MS 50
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10.

図書

図書
Henry Kressel, J. K. Butler
出版情報: New York : Academic Press, 1977  xiii, 608 p. ; 24 cm
シリーズ名: Quantum electronics : principles and applications
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