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1.

図書

図書
Patrick Roblin and Hans Rohdin
出版情報: Cambridge : Cambridge University Press, c2002  xxxiv, 688 p. ; 26 cm
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Preface
Acknowledgements
Heterostructure materials / 1:
Semiclassical theory of heterostructures / 2:
Quantum theory of heterostructures / 3:
Quantum heterostructure devices / 4:
Scattering processes in heterostructures / 5:
Scattering-assisted tunneling / 6:
Frequency response of quantum devices from DC to infrared / 7:
Charge control of the two-dimensional electron gas / 8:
High electric field transport / 9:
I-V model of the MODFET / 10:
Small-and large-signal AC models for the long-channel MODFET / 11:
Small-and large-signal AC models for the short-channel MODFET / 12:
DC and microwave electrothermal modeling of FETs / 13:
Analytical DC analysis of short-gate MODFETs / 14:
Small signal AC analysis of the short-gate velocity-saturated MODFET / 15:
Gate resistance and the Schottky-barrier interface / 16:
MODFET high-frequency performance / 17:
Modeling high-performance HBTs / 18:
Practical high-frequency HBTs / 19:
Index
Preface
Acknowledgements
Heterostructure materials / 1:
2.

図書

図書
Karlheinz Seeger
出版情報: Berlin : Springer, c2004  x, 537 p. ; 24 cm
シリーズ名: Advanced texts in physics
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Elementary Properties of Semiconductors
Energy Band Structure
Semiconductor Statistics
Charge and Energy Transport in a Nondegenerate Electron Gas
Carrier Diffusion Processes
Scattering Processes in a Spherical One-Valley Model
Charge Transport and Scattering Processes in the Many-Valley Model
Carrier Transport in the Warped-Sphere Model
Quantum Effects in Transport Phenomena
Impact Ionization and Avalanche Breakdown
Optical Absorption and Reflection
Photoconductivity
Light Generation by Semiconductors
Surface and Interface Properties and the Quantum Hall Effect
Miscellaneous Semiconductors
Elementary Properties of Semiconductors
Energy Band Structure
Semiconductor Statistics
3.

図書

図書
edited by Richard C. Alkire ... [et al.]
出版情報: Weinheim : Wiley-VCH, c2010  xiii, 359 p. ; 25 cm
シリーズ名: Advances in electrochemical science and engineering / edited by Heinz Gerischer and Charles W. Tobias ; contributions from V. Brusic ... [et al.] ; v. 12
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Applications of Electrochemistry in the Fabrication and Characterization of Thin Film Solar Cells
Tailoring of Interfaces for the Photoelectrochemical Conversion of Solar Energy
Printable Materials and Technologies for the Dye-Sensitized Photovoltaic Cell with Flexible Substrates
Electrodeposited Porous ZnO Sensitized by Organic Dyes - Promising Materials for Dye-Sensitized Solar Cells with Potential Application in Large Scale
Thin Film Semiconductors Deposited in Nanometric Scales by Electrochemical and Wet Chemical Methods for Solar Cell Applications
Applications of Electrochemistry in the Fabrication and Characterization of Thin Film Solar Cells
Tailoring of Interfaces for the Photoelectrochemical Conversion of Solar Energy
Printable Materials and Technologies for the Dye-Sensitized Photovoltaic Cell with Flexible Substrates
4.

図書

図書
Richard H. Bube
出版情報: River Edge, N.J. : Imperial College Press, c1998  x, 281 p. ; 23 cm
シリーズ名: Series on properties of semiconductor materials ; vol. 1
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5.

図書

図書
A. Anselm ; translated from the Russian by M.M. Samokhvalov
出版情報: Moscow : Mir , Englewood Cilffs, N.J. : Prenctice-Hall, 1981  x, 645 p. ; 23 cm
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6.

図書

図書
Pallab Bhattacharya
出版情報: Upper Saddle River, NJ : Prentice Hall, c1997  xxv, 613 p. ; 25 cm
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7.

図書

図書
Ernst Rexer
出版情報: Berlin : Akademie-Verlag, 1966  xii, 297 p ; 25 cm
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8.

図書

図書
Peter Y. Yu, Manuel Cardona
出版情報: Berlin : Springer Verlag, 2005, c2001  xviii, 639 p. ; 25 cm
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Introduction / 1:
A Survey of Semiconductors / 1.1:
Elemental Semiconductors / 1.1.1:
Binary Compounds / 1.1.2:
Oxides / 1.1.3:
Layered Semiconductors / 1.1.4:
Organic Semiconductors / 1.1.5:
Magnetic Semiconductors / 1.1.6:
Other Miscellaneous Semiconductors / 1.1.7:
Growth Techniques / 1.2:
Czochralski Method / 1.2.1:
Bridgman Method / 1.2.2:
Chemical Vapor Deposition / 1.2.3:
Molecular Beam Epitaxy / 1.2.4:
Liquid Phase Epitaxy / 1.2.5:
Summary
Electronic Band Structures / 2:
Quantum Mechanics / 2.1:
Translational Symmetry and Brillouin Zones / 2.2:
A Pedestrian's Guide to Group Theory / 2.3:
Definitions and Notations / 2.3.1:
Symmetry Operations of the Diamond and Zinc-Blende Structures / 2.3.2:
Representations and Character Tables / 2.3.3:
Some Applications of Character Tables / 2.3.4:
Empty Lattice or Nearly Free Electron Energy Bands / 2.4:
Nearly Free Electron Band Structure in a Zinc-Blende Crystal / 2.4.1:
Nearly Free Electron Energy Bands in Diamond Crystals / 2.4.2:
Band Structure Calculation by Pseudopotential Methods / 2.5:
Pseudopotential Form Factors in Zinc-Blende- and Diamond-Type Semiconductors / 2.5.1:
Empirical and Self-Consistent Pseudopotential Methods / 2.5.2:
The kċp Method of Band-Structure Calculations / 2.6:
Effective Mass of a Nondegenerate Band Using the kċp Method / 2.6.1:
Band Dispersion near a Degenerate Extremum: Top Valence Bands in Diamondand Zinc-Blende-Type Semiconductors / 2.6.2:
Tight-Binding or LCAO Approach to the Band Structure of Semiconductors / 2.7:
Molecular Orbitals and Overlap Parameters / 2.7.1:
Band Structure of Group-IV Elements by the Tight-Binding Method / 2.7.2:
Overlap Parameters and Nearest-Neighbor Distances / 2.7.3:
Problems
Vibrational Properties of Semiconductors, and Electron-Phonon Interactions / 3:
Phonon Dispersion Curves of Semiconductors / 3.1:
Models for Calculating Phonon Dispersion Curves of Semiconductors / 3.2:
Force Constant Models / 3.2.1:
Shell Model / 3.2.2:
Bond Models / 3.2.3:
Bond Charge Models / 3.2.4:
Electron-Phonon Interactions / 3.3:
Strain Tensor and Deformation Potentials / 3.3.1:
Electron-Acoustic-Phonon Interaction at Degenerate Bands / 3.3.2:
Piezoelectric Electron-Acoustic-Phonon Interaction / 3.3.3:
Electron-Optical-Phonon Deformation Potential Interactions / 3.3.4:
Frohlich Interaction / 3.3.5:
Interaction Between Electrons and Large-Wavevector Phonons: Intervalley Electron-Phonon Interaction / 3.3.6:
Electronic Properties of Defects / 4:
Classification of Defects / 4.1:
Shallow or Hydrogenic Impurities / 4.2:
Effective Mass Approximation / 4.2.1:
Hydrogenic or Shallow Donors / 4.2.2:
Donors Associated with Anisotropic Conduction Bands / 4.2.3:
Acceptor Levels in Diamond-and Zinc-Blende-Type Semiconductors / 4.2.4:
Deep Centers / 4.3:
Green's Function Method for Calculating Defect Energy Levels / 4.3.1:
An Application of the Green's Function Method: Linear Combination of Atomic Orbitals / 4.3.2:
Another Application of the Green's Function Method: Nitrogen in GaP and Ga AsP Alloys / 4.3.3:
Final Note on Deep Centers / 4.3.4:
Electrical Transport / 5:
Quasi-Classical Approach / 5.1:
Carrier Mobility for a Nondegenerate Electron Gas / 5.2:
Relaxation Time Approximation / 5.2.1:
Nondegenerate Electron Gas in a Parabolic Band / 5.2.2:
Dependence of Scattering and Relaxation Times on Electron Energy / 5.2.3:
Momentum Relaxation Times / 5.2.4:
Temperature Dependence of Mobilities / 5.2.5:
Modulation Doping / 5.3:
High-Field Transport and Hot Carrier Effects / 5.4:
Velocity Saturation / 5.4.1:
Negative Differential Resistance / 5.4.2:
Gunn Effect / 5.4.3:
Magneto-Transport and the Hall Effect / 5.5:
Magneto-Conductivity Tensor / 5.5.1:
Hall Effect / 5.5.2:
Hall Coefficient for Thin Film Samples (van der Pauw Method) / 5.5.3:
Hall Effect for a Distribution of Electron Energies / 5.5.4:
Optical Properties I / 6:
Macroscopic Electrodynamics / 6.1:
Digression: Units for the Frequency of Electromagnetic Waves / 6.1.1:
Experimental Determination of Optical Constants / 6.1.2:
Kramers-Kronig Relations / 6.1.3:
The Dielectric Function / 6.2:
Experimental Results / 6.2.1:
Microscopic Theory of the Dielectric Function / 6.2.2:
Joint Density of States and Van Hove Singularities / 6.2.3:
Van Hove Singularities in ϵi / 6.2.4:
Direct Absorption Edges / 6.2.5:
Indirect Absorption Edges / 6.2.6:
""""Forbidden"""" Direct Absorption Edges / 6.2.7:
Excitons / 6.3:
Exciton Effect at M0 Critical Points / 6.3.1:
Absorption Spectra of Excitons / 6.3.2:
Exciton Effect at M1 Critical Points or Hyperbolic Excitons / 6.3.3:
Exciton Effect at M3 Critical Points / 6.3.4:
Phonon-Polaritons and Lattice Absorption / 6.4:
Phonon-Polaritons / 6.4.1:
Lattice Absorption and Reflection / 6.4.2:
Multiphonon Lattice Absorption / 6.4.3:
Dynamic Effective Ionic Charges in Heteropolar Semiconductors / 6.4.4:
Absorption Associated with Extrinsic Electrons / 6.5:
Free-Carrier Absorption in Doped Semiconductors / 6.5.1:
Absorption by Carriers Bound to Shallow Donors and Acceptors / 6.5.2:
Modulation Spectroscopy / 6.6:
Frequency Modulated Reflectance and Thermoreflectance / 6.6.3:
Piezoreflectance / 6.6.4:
Electroreflectance (Franz-Keldysh Effect) / 6.6.5:
Photoreflectance / 6.6.6:
Reflectance Difference Spectroscopy / 6.6.7:
Optical Properties II / 7:
Emission Spectroscopies / 7.1:
Band-to-Band Transitions / 7.1.1:
Free-to-Bound Transitions / 7.1.2:
Donor-Acceptor Pair Transitions / 7.1.3:
Excitons and Bound Excitons / 7.1.4:
Luminescence Excitation Spectroscopy / 7.1.5:
Light Scattering Spectroscopies / 7.2:
Macroscopic Theory of Inelastic Light Scattering by Phonons / 7.2.1:
Raman Tensor and Selection Rules / 7.2.2:
Experimental Determination of Raman Spectra / 7.2.3:
Microscopic Theory of Raman Scattering / 7.2.4:
A Detour into the World of Feynman Diagrams / 7.2.5:
Brillouin Scattering / 7.2.6:
Experimental Determination of Brillouin Spectra / 7.2.7:
Resonant Raman and Brillouin Scattering / 7.2.8:
Photoelectron Spectroscopy / 8:
Photoemission / 8.1:
Angle-Integrated Photoelectron Spectra of the Valence Bands / 8.1.1:
Angle-Resolved Photoelectron Spectra of the Valence Bands / 8.1.2:
Core Levels / 8.1.3:
Inverse Photoemission
Surface Effects / 8.2:
Surface States and Surface Reconstruction / 8.3.1:
Surface Energy Bands / 8.3.2:
Fermi Level Pinning and Space Charge Layers / 8.3.3:
Effect of Quantum Confinement on Electrons and Phonons in Semiconductors / 9:
Quantum Confinement and Density of States / 9.1:
Quantum Confinement of Electrons and Holes / 9.2:
Semiconductor Materials for Quantum Wells and Superlattices / 9.2.1:
Classification of Multiple Quantum Wells and Superlattices / 9.2.2:
Confinement of Energy Levels of Electrons and Holes / 9.2.3:
Some Experimental Results / 9.2.4:
Phonons in Superlattices / 9.3:
Phonons in Superlattices: Folded Acoustic and Confined Optic Modes / 9.3.1:
Folded Acoustic Modes: Macroscopic Treatment / 9.3.2:
Confined Optical Modes: Macroscopic Treatment / 9.3.3:
Electrostatic Effects in Polar Crystals: Interface Modes / 9.3.4:
Raman Spectra of Phonons in Semiconductor Superlattices / 9.4:
Raman Scattering by Folded Acoustic Phonons / 9.4.1:
Raman Scattering by Confined Optical Phonons / 9.4.2:
Raman Scattering by Interface Modes / 9.4.3:
Macroscopic Models of Electron-LO Phonon (Fröhlich) Interaction in Multiple Quantum Wells / 9.4.4:
Electrical Transport: Resonant Tunneling / 9.5:
Resonant Tunneling Through a Double-Barrier Quantum Well / 9.5.1:
I-V Characteristics of Resonant Tunneling Devices / 9.5.2:
Quantum Hall Effects in Two-Dimensional Electron Gases / 9.6:
Landau Theory of Diamagnetism in a Three-Dimensional Free Electron Gas / 9.6.1:
Magneto-Conductivity of a Two-Dimensional Electron Gas: Filling Factor / 9.6.2:
The Experiment of von Klitzing, Pepper and Dorda / 9.6.3:
Explanation of the Hall Plateaus in the Integral Quantum Hall Effect / 9.6.4:
Concluding Remarks / 9.7:
Appendix: Pioneers of Semiconductor Physics Remember
Ultra-Pure Germanium: From Applied to Basic Research or an Old Semiconductor Offering New Opportunities / Eugene E. Haller
Two Pseudopotential Methods: Empirical and Ab Initio / Marvin L. Cohen
The Early Stages of Band-Structures Physics and Its Struggles for a Place in the Sun / Conyers Herring
Cyclotron Resonance and Structure of Conduction and Valence Band Edges in Silicon and Germanium / Charles Kittel
Optical Properties of Amorphous Semiconductors and Solar Cells / Jan Tauc
Optical Spectroscopy of Shallow Impurity Centers / Elias Burstein
On the Prehistory of Angular Resolved Photoemission / Neville V. Smith
The Discovery and Very Basics of the Quantum Hall Effect / Klaus von Klitzing
The Birth of the Semiconductor Superlattice / Leo Esaki
References
Subject Index
Table of Fundamental Physical Constants (Inside Front Cover)
Table of Units (Inside Back Cover)
Introduction / 1:
A Survey of Semiconductors / 1.1:
Elemental Semiconductors / 1.1.1:
9.

図書

図書
Mark Lundstrom
出版情報: Cambridge : Cambridge University Press, 2000  xix, 418 p. ; 26 cm
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The quantum foundation / 1:
Carrier scattering / 2:
The Boltzmann transport equation / 3:
Low-field transport / 4:
Balance equations / 5:
Monte Carlo simulation / 6:
High-field transport in bulk semiconductors / 7:
Carrier transport in devices / 8:
Transport in mesoscopic structures / 9:
Appendices
The quantum foundation / 1:
Carrier scattering / 2:
The Boltzmann transport equation / 3:
10.

図書

図書
J.H. Leck
出版情報: Oxford : Pergamon Press, 1967  xiv, 164 p. ; 23 cm
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