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1.

図書

図書
editors, Tomas Diaz de la Rubia ... [et al.]
出版情報: Pittsburg, Pa. : Materials Research Society, c1997  xv, 541 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 469
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2.

図書

図書
editors, Scott T. Dunham, Jeffrey S. Nelson
出版情報: Warrendale, Pa. : Materials Research Society, c1998  ix, 273 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 490
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3.

図書

図書
edited by Evgeni Gusev
出版情報: Dordrecht : Springer, c2006  x, 492 p. ; 25 cm
シリーズ名: NATO science series ; ser. 2 . Mathematics, physics and chemistry ; v. 220
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目次情報: 続きを見る
High-K Technology
PVD-High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-state Drive Current; M. Niwa et al
Extremely High Density Capacitors with ALD High-k Dielectric Layers / J. Klootwijk et al
Towards Understanding of Processing-nanostructure-property Inter-relationships in High-k/Metal Gate Stacks / P.Majhi et al
Defects in High-K Dielectrics: Characterization
On the Characterization of Electronically Active Defects in High-k Gate Dielectrics / D.A. Buchanan ; D. Felnhofer
Inelastic Electron Tunnelling Spectroscopy (IETS) Study of High-k Dielectrics / T.P. Ma et al
Characterization and Modeling of Defects in High-k Layers Through Fast Electrical Transient Measurements / J. Mitard et al
Characterization of Electrically Active Defects in High-k Gate Dielectrics Using Charge Pumping / E.M. Vogel ; D.W. Heh
Impact of High-k Properties on MOSFET Electrical Characteristics / L. Pantisano et al
High-K Processing and Defects
Structural Evolution and Point Defects in Metal Oxide-based High-k Gate Dielectrics / P. C. McIntyre et al
Disordered Structure and Density of Gap States in High-Permittivity Thin Solid Films / K. Kukli et al
Interdiffusion Studies of High-k Gate Dielectric Stack Constituents / P. Sivasubramiani et al
XPS/LEIS Studyof High-k Rare Earth (Lu, Yb)Oxides and Silicates on Si: The Effect of Annealing onMicrostructure Evolution / A.Zenkevich et al
Transient Charging Effects and Its Implications to The Reliability of High-k Dielectrics / B. H. Lee et al
High-K Heory
Defect Energy Levels in High-k Gate Oxides / J. Robertson et al
Defect-related Issues in High-k Dielectrics / S.T.Pantelides et al
Studying The Effects of Nitrogen and Hafnium Incorporation into The SiO2/Si(100) Interface with Replica-exchange Molecular Dynamics and Density-Functional-Theory Calculations / W. Androni et al
Electrically Active Defects
Probing Point Defects and Traps in Stacks of Ultrathin Hafnium Oxides on (100)Si by Electron Spin Resonance: Interfaces and N Incorporation / A. Stesmans ; V. V. Afanas'ev
Mechanism of Charge Trapping Reduction in Scaled High-k Gate Stacks / G. Bersuker et al
Electrically Active Interface and Bulk Semiconductor Defects in High-k / Germanium Structures / A. Dimoulas
Defect and Composition Analysis of As-deposited and Nitrided (100)Si/ SiO2/ Hf1-xSixO2 Stacks by Electron Paramagnetic Resonance and Ion Beam Analysis / H.J. von Bardeleben et al
Defects at The High-k /Semiconductor Interfaces Investigated By Spin Dependent Spectroscopies / M. Fanciulli et al
Fixed Oxide Charge in Ru-based Chemical Vapour Deposited High-k Gate Stacks / K. Frohlich et al
Electrical Defects in Atomic Layer Deposited HfO2 Films on Silicon: Influence of Precursor Chemistries and Substrate Treatment / S. Dueas et al
The Effects of Radiation and Charge Trapping on The Reliability of Alternative Gate Dielectrics / J. A. Felix et al
Can LEIS Spectra Contain Information on Surface Electronic Structure of High-k Dielectrics / Yu. Lebedinskii et al
Low Substrate Damage High-k Removal After Gate Patterning / D. Shamiryan et al
Monitoring of Fermi Level Variations at Metal/High-k Interfaces with in situ X-ray Photoelectron Spectroscopy
Interfaces
Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High-k Materials on Silicon / T. Gustafsson et al
Interface Formation During Epitaxial Growth of Binary Metal Oxides on Silicon / H. J. Osten et al
Chemical Environment and Strain on Oxygen Vacancy Formation Energies at Silicon-Silicon Oxide Interfaces / T.M. Henderson
Dielectric and Infrared Properties of Ultrathin SiO2 Layers on Si (100) / F. Giustino ; A. Pasquarello
The (1 0 0) Surface of Semiconductor Silicon (in Practical Conditions)
Preparation, Evolution, Passivation / G.F.Cerofolini
Processing, Characterization and Devices
Correlation Between Defects, Leakage Current
High-K Technology
PVD-High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-state Drive Current; M. Niwa et al
Extremely High Density Capacitors with ALD High-k Dielectric Layers / J. Klootwijk et al
4.

図書

図書
editors, J. Gelpey ... [et al.] ; [sponsored by] IEEE EDS
出版情報: Piscataway, N.J. : IEEE, c2003  xi, 220 p. ; 28 cm
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5.

図書

図書
edited by Donald M. Smyth
出版情報: Princeton, N.J. : Electrochemical Society, c1976  v, 216 p. ; 23 cm
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6.

図書

図書
edited by J. Chikawa, K. Sumino, and K. Wada
出版情報: Tokyo : KTK Scientific , Dordrecht ; Boston : D. Reidel , Norwell, MA, U.S.A. : Distributed in the U.S.A. and Canada by Kluwer Academic, c1987  vi, 261 p. ; 24 cm
シリーズ名: Advances in solid state technology
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7.

図書

図書
editors, J. Narayan and T. Y. Tan
出版情報: New York : North Holland, c1981  xi, 537 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 2
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8.

図書

図書
editors, Noble M. Johnson, Stephen G. Bishop, George D. Watkins
出版情報: Pittsburgh, Pa. : Materials Research Society, c1985  xv, 604 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 46
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9.

図書

図書
editors, Subhash Mahajan, James W. Corbett
出版情報: New York : North-Holland, c1983  xv, 582 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 14
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10.

図書

図書
editors, Richard B. Fair, Charles W. Pearce, Jack Washburn
出版情報: Pittsburgh, Pa. : Materials Research Society, c1985  xiii, 284 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 36
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