| Preface |
| III-V Optoelectronics / Session 1： |
| Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers |
| Improvement of Kink Characteristics of 850nm AlGaAs/GaAs Implant Vertical Cavity Emitting Lasers Utilizing Silicon Implantation Induced Disordering / H.C. Kuo ; Fang-I Lai ; Tao-Hung Hsueh ; Ya-hsien Chang ; Wen-chun Shu ; Li-Hung Lai ; S.C Wang |
| Effect of Post-Oxidation Annealing on VCSEL Device Performance / N.C Das ; W. Chang |
| Low Voltage Operation Phototransistor with InGaP/AlGaAs/GaAs Composite Emitter / S.W. Tan ; W.T. Chen ; M.Y. Chu ; W.S. Lour |
| III-V Devices and Processing / Session 2： |
| Observation of Current Gain Collapse in Large-area HBT with Rectangular Emitter and Etched Base / M.-K. Tsai ; S.-W. Tan ; W.-S. Lour ; Y.-J. Yang |
| Characteristics of Sulfur and InGaP-passivated InGaP/GaAs Heterojunction Bipolar Transistors |
| Interconnect Copper Metallization of InGaP HBT's using WN[subscript x] as the Diffusion Barrier / Shang-Wen Chang ; Edward Yi Chang ; Cheng-Shih Lee |
| Solvent-affected Chemistry at GaAs/sulfide Solution Interface / Mikhail V. Lebedev ; Thomas Mayer ; Wolfram Jaegermann |
| InP Electrochemistry / Session 3： |
| Anodic Behavior of InP: Film Growth, Porous Structures, and Current Oscillations / D.N. Buckley ; C. O'Dwyer ; E. Harvey ; T. Melly ; M. Serantoni ; D. Sutton ; S.B. Newcomb |
| A Mechanistic Study of Anodic Formation of Porous InP |
| Growth of Anodic Oxides on n-InP Studied by Electrochemistry and Surface Analysis: Correlation between Oxidation Methods and Passivating Properties / N. Simon ; N.C. Quach ; A. Etchberry |
| Localized Photoetching of n-InP, at Open-circuit Potential / Catherine Debiemme-Chouvy ; Anne Quennoy ; Isabelle Gerard |
| Poster Session |
| Investigation of Defect Passivation in 4H-SiC using Hydrogen Plasma and Effect of Post-Annealing / Myung Yoon Um ; In Sang Jeon ; Da Il Eom ; Bum Seok Kim ; Ho Keun Song ; Hoon Joo Na ; Dae Hwan Kim ; Jae Kyeong Jeong ; Hyeong Joon Kim |
| HRTEM Study of SiC Buried Layer formed by C+ Implantation in Silicon / Yumei Xing ; Yuehui Yu ; Zixin Lin |
| (Photo-)Electrochemistry at n-GaN Grown on Sapphire and on Si: A Comparitive Study / I.M. Huygens ; K. Strubbe |
| MOCVD Growth of InP/InGaAlAs Distributed Bragg Reflectors / J.Y. Tsai ; T.C. Lu ; S.C. Wang |
| Very Low Temperature Growth of c-axis oriented ZnO Thin Film on Si Substrates / Hyoun Woo Kim ; Kwang Sik Kim ; Chongmu Lee |
| Fabrication and NO2 Surface Photo Voltage Sensor Properties of Nanoporous Tin-Silica Film / Brian Yuliarto ; HaoShen Zhou ; Takeo Yamada ; Itaru Honma ; Keisuke Asai |
| Emerging Materials / Session 4： |
| Man-made Quantum Structures: From Superlattices to Quantum Dots / Raphael Tsu |
| Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN / G.T. Thaler ; M. Overberg ; R. Frazier ; C.R. Abernathy ; S.J. Pearton ; F. Ren ; Y.D. Park ; R. Rairigh ; J. Kelly ; J.S. Lee ; N. Theodoropoulou ; A.F. Hebard|p141 |
| Diamond--the Next Generation Material for High Power Electronics? / A. Aleksov ; M. Schreck ; P. Schmid ; E. Kohn |
| III-Nitride Light Emitting Diodes / Session 5： |
| Deep Ultraviolet Light Emitting Diodes using AlGaN Quantum Well Active Region / M. Asif Khan ; Maxim Shatalov ; Vinod Adivarahan ; Jain Ping Zhang ; Ashay Chitnis ; Grigory Simin ; Jinwei Yang |
| Dramatically Improved Current Spreading in UV LED's via Si Delta-doping in the n-AlGaN Cladding Layer / S.F. LeBoeuf ; X.A. Cao ; L.B. Rowland ; J.J. Flynn ; G.R. Brandes |
| Carrier Capture and Recombination at Localized States in InGaN/GaN Light-Emitting Diodes / J.L. Garrett ; S.D. Arthur ; D.W. Merfeld |
| Wide Bandgap Materials and Electronic Devices / Session 6： |
| Instabilities in GaN based FET Structures--Nature and Alternative Structures / M. Neuburger ; I. Daumiller ; A. Krtschil ; A. Krost ; J. Van Nostrand ; T. Jenkins |
| AlGaN Power Rectifiers / J. Kim ; K. Baik ; B.P. Gila ; Y. Irokawa ; J.-I. Chyi ; S.S. Park ; Y.J. Park |
| Physics of Electron Injection-Induced Effects in III-Nitrides / Leonid Chernyak ; William Burdett |
| DC Characteristics of AlGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates / B. Luo ; C.-C. Pan ; G.-T. Chen ; J.I. Chyi ; Y.J Park |
| Innovative Substrate Solutions for Wide Band Gap Materials: the Smart Cut Approach / F. Letertre ; N. Daval ; F. Templier ; L. DiCioccio ; C. Richtarch ; B. Faure ; A.M. Cartier ; I. Matko |
| Optical Properties of III-Nitride Materials / Session 7： |
| Microcathodoluminescence Characterization of III-Nitride Heterojunctions and Devices / L.J. Brillson ; G.H. Jessen ; S.H. Goss ; X.L. Sun ; S.T. Bradley ; B.D. White ; P.E. Smith ; T.E. Levin ; A.P. Young ; D.C. Look ; J.E. Van Nostrand ; G.D. Via ; J.K. Gillespie ; R.W. Dettmer ; J.S. Sewell ; R. Fitch |
| New Spectroscopic Data of Erbium Ions in GaN Thin Films / F. Pelle ; F. Auzel ; J.M. Zavada ; D.S. Lee ; A.J. Steckl |
| Spectroscopic Ellipsometry Applied to the Characterization of GaN and AlGaN/GaN Heterostructures / P. Boher ; S. Bourtault ; J.P. Piel |
| Infrared Photocurrent Spectroscopy of Epitaxial III-Nitride Materials / Edward B. Stokes ; Steven F. LeBoeuf |
| Fabrication and Characterization of GaN Nanorods / Chang-Chin Yu ; Jung-Wai Chang ; Chia-Feng Lin |
| Subject Index |
| Preface |
| III-V Optoelectronics / Session 1： |
| Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers |
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