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1.

図書
図書
1. Nanoscale silicon devices (: hardback)
edited by Shunri Oda, David K. Ferry
出版情報: Boca Raton : CRC Press, c2016  xii, 288 p. ; 24 cm
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2.

図書
図書
2. Transport in nanostructures
David K. Ferry and Stephen M. Goodnick
出版情報: Cambridge, U.K. ; New York : Cambridge University Press, 1997  xi, 512 p. ; 26 cm
シリーズ名: Cambridge studies in semiconductor physics and microelectronic engineering ; 6
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目次情報: 続きを見る
Introduction / 1：
Quantum confined systems / 2：
Transmission in nanostructures / 3：
Quantum dots and single electron phenomena / 4：
Interference in diffusive transport / 5：
Temperature decay of fluctuations / 6：
Non-equilibrium transport and nanodevices / 7：
Introduction / 1：
Quantum confined systems / 2：
Transmission in nanostructures / 3：
3.

図書
図書
3. Ultrafast phenomena in semiconductors : 27-28 January 1994, Los Angeles, California
David K. Ferry, Henry M. van Driel, chairs/editors ; sponsored and published by SPIE--the International Society for Optical Engineering
出版情報: Bellingham, Wash., USA : SPIE, c1994  x, 378 p. ; 28 cm
シリーズ名: Proceedings / SPIE -- the International Society for Optical Engineering ; v. 2142
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4.

図書
図書
4. Quantum transport in ultrasmall devices
edited by David K. Ferry ... [et al]
出版情報: New York : Plenum Press, c1995  x, 544 p. ; 26 cm
シリーズ名: NATO ASI series ; Series B . Physics ; v. 342
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5.

図書
図書
5. Granular nanoelectronics
edited by David K. Ferry, John R. Barker, and Carlo Jacoboni
出版情報: New York : Plenum Press, c1991  xii, 590 p. ; 26 cm
シリーズ名: NATO ASI series ; Series B . Physics ; v. 251
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6.

図書
図書
6. Quantum transport in semiconductors
edited by David K. Ferry and Carlo Jacoboni
出版情報: New York : Plenum Press, c1992  xxi, 292 p. ; 24 cm
シリーズ名: Physics of solids and liquids
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7.

図書
図書
7. Physical electronics ([text] ; supplement)
by David K. Ferry and D. Ronald Fannin
出版情報: Reading, Mass. : Addison-Wesley Pub. Co., 1971  xii, 287 p. ; 24 cm
シリーズ名: Addison-Wesley series in electrical engineering
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8.

図書
図書
8. Physics of nonlinear transport in semiconductors
edited by David K. Ferry, J.R. Barker, and C. Jacoboni
出版情報: New York : Plenum Press, c1980  xx, 614 p. ; 26 cm
シリーズ名: NATO advanced study institutes series ; ser. B . Physics ; v. 52
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9.

図書
図書
9. The physics of submicron semiconductor devices
edited by Harold L. Grubin, David K. Ferry, and C. Jacoboni
出版情報: New York : Plenum Press : Published in cooperation with NATO Scientific Affairs Division, c1988  viii, 736 p. ; 26 cm
シリーズ名: NATO ASI series ; ser. B . Physics ; v. 180
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10.

図書
図書
10. デバイス物理のための量子力学
David K.Ferry[著] ; 丹慶勝市[ほか] 共訳
出版情報: 東京 : 丸善, 1996.9  xii, 314p ; 21cm
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11.

図書
図書
11. Quantum mechanics : an introduction for device physicists and electrical engineers. 2nd ed. (: pbk)
David K. Ferry
出版情報: Bristol [UK] ; Philadelphia : Institute of Physics Pub., c1995  x, 345 p. ; 24 cm
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目次情報: 続きを見る
Preface to the first edition
Preface to the second edition
Waves and particles / 1：
Introduction / 1.1：
Light as particles--the photoelectric effect / 1.2：
Electrons as waves / 1.3：
Position and momentum / 1.4：
Expectation of the position / 1.4.1：
Momentum / 1.4.2：
Non-commuting operators / 1.4.3：
Returning to temporal behaviour / 1.4.4：
Summary / 1.5：
References
Problems
The Schrodinger equation / 2：
Waves and the differential equation / 2.1：
Density and current / 2.2：
Some simple cases / 2.3：
The free particle / 2.3.1：
A potential step / 2.3.2：
The infinite potential well / 2.4：
The finite potential well / 2.5：
The triangular well / 2.6：
Coupled potential wells / 2.7：
The time variation again / 2.8：
The Ehrenfest theorem / 2.8.1：
Propagators and Green's functions / 2.8.2：
Numerical solution of the Schrodinger equation / 2.9：
Tunnelling / 3：
The tunnel barrier / 3.1：
The simple rectangular barrier / 3.1.1：
The tunnelling probability / 3.1.2：
A more complex barrier / 3.2：
The double barrier / 3.3：
Simple, equal barriers / 3.3.1：
The unequal-barrier case / 3.3.2：
Shape of the resonance / 3.3.3：
Approximation methods--the WKB method / 3.4：
Bound states of a general potential / 3.4.1：
Tunnelling devices / 3.4.2：
A current formulation / 3.5.1：
The p-n junction diode / 3.5.2：
The resonant tunnelling diode / 3.5.3：
Resonant interband tunnelling / 3.5.4：
Self-consistent simulations / 3.5.5：
The Landauer formula / 3.6：
Periodic potentials / 3.7：
Velocity / 3.7.1：
Superlattices / 3.7.2：
Single-electron tunnelling / 3.8：
Bloch oscillations / 3.8.1：
The double-barrier quantum dot / 3.8.2：
The harmonic oscillator / 4：
Hermite polynomials / 4.1：
The generating function / 4.2：
Motion of the wave packet / 4.3：
A simpler approach with operators / 4.4：
Quantizing the LC-circuit / 4.5：
The vibrating lattice / 4.6：
Motion in a quantizing magnetic field / 4.7：
Connection with semi-classical orbits / 4.7.1：
Adding lateral confinement / 4.7.2：
The quantum Hall effect / 4.7.3：
Basis functions, operators, and quantum dynamics / 5：
Position and momentum representation / 5.1：
Some operator properties / 5.2：
Time-varying expectations / 5.2.1：
Hermitian operators / 5.2.2：
On commutation relations / 5.2.3：
Linear vector spaces / 5.3：
Some matrix properties / 5.3.1：
The eigenvalue problem / 5.3.2：
Dirac notation / 5.3.3：
Fundamental quantum postulates / 5.4：
Translation operators / 5.4.1：
Discretization and superlattices / 5.4.2：
Time as a translation operator / 5.4.3：
Canonical quantization / 5.4.4：
Stationary perturbation theory / 6：
The perturbation series / 6.1：
Some examples of perturbation theory / 6.2：
The Stark effect in a potential well / 6.2.1：
The shifted harmonic oscillator / 6.2.2：
Multiple quantum wells / 6.2.3：
Coulomb scattering / 6.2.4：
An alternative technique--the variational method / 6.3：
Time-dependent perturbation theory / 7：
Electron-phonon scattering / 7.1：
The interaction representation / 7.3：
Exponential decay and uncertainty / 7.4：
A scattering-state basis--the T-matrix / 7.5：
The Lippmann-Schwinger equation / 7.5.1：
Coulomb scattering again / 7.5.2：
Orthogonality of the scattering states / 7.5.3：
Motion in centrally symmetric potentials / 8：
The two-dimensional harmonic oscillator / 8.1：
Rectangular coordinates / 8.1.1：
Polar coordinates / 8.1.2：
Splitting the angular momentum states with a magnetic field / 8.1.3：
Spectroscopy of a harmonic oscillator / 8.1.4：
The hydrogen atom / 8.2：
The radial equation / 8.2.1：
Angular solutions / 8.2.2：
Angular momentum / 8.2.3：
Atomic energy levels / 8.3：
The Fermi-Thomas model / 8.3.1：
The Hartree self-consistent potential / 8.3.2：
Corrections to the centrally symmetric potential / 8.3.3：
The covalent bond in semiconductors / 8.3.4：
Hydrogenic impurities in semiconductors / 8.4：
Electrons and anti-symmetry / 9：
Symmetric and anti-symmetric wave functions / 9.1：
Spin angular momentum / 9.2：
Systems of identical particles / 9.3：
Fermion creation and annihilation operators / 9.4：
Field operators / 9.5：
Connection with the many-electron formulation / 9.5.1：
Quantization of the Hamiltonian / 9.5.2：
The two-electron wave function / 9.5.3：
The homogeneous electron gas / 9.5.4：
The Green's function / 9.6：
The equations of motion / 9.6.1：
The Hartree approximation / 9.6.2：
Connection with perturbation theory / 9.6.3：
Dyson's equation / 9.6.4：
The self-energy / 9.6.5：
Solutions to selected problems
Index
Preface to the first edition
Preface to the second edition
Waves and particles / 1：
12.

図書
図書
12. ナノデバイスへの量子力学
D.K.フェリー著 ; 落合勇一 [ほか] 訳
出版情報: 東京 : シュプリンガー・フェアラーク東京, 2006.4  xii, 439p ; 21cm
シリーズ名: World physics selection : textbook
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13.

図書
図書
13. Silicon nanoelectronics
edited by Shunri Oda and David K. Ferry
出版情報: Boca Raton : Taylor & Francis Group, 2006  313 p. ; 24 cm
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目次情報: 続きを見る
Physics of Silicon Nanodevices / David K. Ferry ; Richard Akis ; Matthew J. Gilbert ; Stephen M. RameyChapter 1：
Introduction / 1.1：
Small MOSFETs / 1.2：
The Simple One-Dimensional Theory / 1.2.1：
Ballistic Transport in the MOSFET / 1.2.2：
Granularity / 1.3：
Quantum Behavior in the Device / 1.4：
The Effective Potential / 1.4.1：
Effective Carrier Wave Packet / 1.4.1.1：
Statistical Considerations / 1.4.1.2：
Quantum Simulations / 1.4.2：
The Device Structure / 1.4.2.1：
The Wave Function and Technique / 1.4.2.2：
Results / 1.4.2.3：
Quantum Dot Single-Electron Devices / 1.5：
Many-Body Interactions / 1.6：
Acknowledgments / 1.7：
References
Practical CMOS Scaling / David J. FrankChapter 2：
CMOS Technology Overview / 2.1：
Current CMOS Device Technology / 2.2.1：
International Technology Roadmap for Semiconductors (ITRS) Projections / 2.2.2：
Scaling Principles / 2.3：
General Scaling
Characteristic Scale Length / 2.3.2：
Exploratory Technology / 2.4：
New Materials / 2.4.1：
Fully Depleted SOI / 2.4.2：
Double-Gate and Multiple-Gate FET Structures / 2.4.3：
Limits to Scaling / 2.5：
Quantum Mechanics / 2.5.1：
Atomistic Effects / 2.5.2：
Thermodynamic Effects / 2.5.3：
Practical Considerations / 2.5.4：
Power-Constrained Scaling Limits / 2.6：
Summary / 2.7：
The Scaling Limit of MOSFETs due to Direct Source-Drain Tunneling / Hisao KawauraChapter 3：
EJ-MOSFETs / 3.1：
Concept of EJ-MOSFETs / 3.2.1：
Fabrication of the Device Structure / 3.2.2：
Basic Operation / 3.2.3：
Direct Source-Drain Tunneling / 3.3：
Detection of the Tunneling Current / 3.3.1：
Numerical Study of the Tunneling Current / 3.3.2：
The Scaling Limit of MOSFETs / 3.4：
Estimation of Direct Source-Drain Tunneling in MOSFETs / 3.4.1：
Future Trends in Post-6-nm MOSFETs / 3.4.2：
Conclusion / 3.5：
Quantum Effects in Silicon Nanodevices / Toshiro HiramotoChapter 4：
Quantum Effects in MOSFETs / 4.1：
Band Structures of Silicon / 4.2.1：
Surface Quantization / 4.2.2：
Carrier Confinement in Thin SOI MOS Structures / 4.2.3：
Mobility of Confined Carriers / 4.2.4：
Influences of Quantum Effects in MOSFETs / 4.3：
Threshold Voltage Increase in Bulk MOSFETs / 4.3.1：
Threshold Voltage Increase in FD-SOI MOSFETs / 4.3.2：
Mobility in Ultrathin FD-SOI MOSFETs / 4.3.3：
Quantum Effects in Ultranarrow Channel MOSFETs / 4.4：
Advantage of Quantum Effects in Ultranarrow Channel MOSFETs / 4.4.1：
Threshold Voltage Increase in n-Type Narrow Channel MOSFETs / 4.4.2：
Threshold Voltage Increase in n-Type and p-Type Narrow Channel MOSFETs / 4.4.3：
Threshold Voltage Adjustment Using Quantum Effects / 4.4.4：
Mobility Enhancement due to Quantum Effects / 4.4.5：
Ballistic Transport in Silicon Nanostructures / Hiroshi Mizuta ; Katsuhiko Nishiguchi ; Shunri Oda4.5：
Ballistic Transport in Quantum Point Contacts / 5.1：
Ballistic Transport in Ultra-Short Channel Vertical Silicon Transistors / 5.3：
Fabrication of Nanoscale Vertical FETs / 5.3.1：
Conductance Quantization in Nanoscale Vertical FETs / 5.3.2：
Characteristics under a Magnetic Field / 5.3.3：
Effects of Cross-Sectional Channel Geometries / 5.3.4：
Summary and Future Subjects / 5.4：
Resonant Tunneling in Si Nanodevices / Michiharu Tabe ; Hiroya Ikeda ; Yasuhiko IshikawaChapter 6：
Outline of Resonant Tunneling / 6.1：
Early Work on Resonant Tunneling / 6.1.1.1：
Resonant Tunneling in Si-Based Materials - Si/SiGe and Si/SiO[subscript 2] / 6.1.1.2：
Quantum Confinement Effect in a Thin Si Layer / 6.1.2：
Double-Barrier Structures of SiO[subscript 2]/Si/SiO[subscript 2] Formed by Anisotropic Etching / 6.1.3：
Resonant Tunneling in SiO[subscript 2]/Si/SiO[subscript 2] / 6.2：
Fabrication of an RTD / 6.2.1：
Resonant Tunneling in the Low Voltage Region / 6.2.2：
Hot-Electron Storage in the High-Voltage Region / 6.2.3：
Switching of Tunnel-Modes: Comparison with a Single Barrier / 6.2.4：
Zero-Dimensional Resonant Tunneling / 6.3：
Coexistence of Coulomb Blockade and Resonant Tunneling / 6.3.1：
Fabrication of a SiO[subscript 2]/Si-Dots/SiO[subscript 2] Structure / 6.3.2：
I-V Characteristics of an SiO[subscript 2]/Si-Dots/SiO[subscript 2] Tunnel Diode / 6.3.3：
Acknowledgment
Silicon Single-Electron Transistor and Memory / L. Jay GuoChapter 7：
Quantum Dot Transistor / 7.1：
Theoretical Background / 7.2：
Energy of the Quantum Dot System / 7.2.1：
Conductance Oscillation and Potential Fluctuation / 7.2.2：
Transport under Finite Temperature and Finite Bias / 7.2.3：
Device Structure and Fabrication / 7.3：
Experimental Results and Analysis / 7.4：
Single-Electron Quantum-Dot Transistor / 7.4.1：
Single-Hole Quantum-Dot Transistor / 7.4.2：
Transport Characteristics under Finite Bias / 7.4.3：
Transport Through Excited States / 7.4.4：
Artificial Atom / 7.5：
Single Charge Trapping / 7.6：
Introduction to Memory Devices / 7.7：
Floating Gate Scheme / 7.8：
Single-Electron MOS memory (SEMM) / 7.9：
Structure of SEMM / 7.9.1：
Fabrication Procedure / 7.9.2：
Experimental Observations / 7.9.3：
Analysis / 7.9.4：
Effects of Trap States / 7.9.5：
Effect of Thicker Tunnel Oxide / 7.10：
Discussion / 7.11：
Silicon Memories Using Quantum and Single-Electron Effects / Sandip TiwariChapter 8：
Single-Electron Effect / 8.1：
Single-Electron Transistors and Their Memories / 8.3：
Memories by Scaling Floating Gates of Flash Structures / 8.3.2：
Modeling of Transport: Tunneling / 8.4：
Tunneling in Oxide / 8.4.1：
Quantum Kinetic Equation / 8.4.2：
Carrier Statistics and Charge Fluctuations / 8.4.3：
Experimental Behavior of Memories / 8.5：
Percolation Effects / 8.5.1：
Limitations in Use of Field Effect / 8.5.2：
Confinement and Random Effects in Semiconductors / 8.5.3：
Variances due to Dimensions / 8.5.4：
Limits due to Tunneling / 8.5.5：
Tunneling in Silicon / 8.5.5.1：
Can We Avoid Use of Collective Phenomena? / 8.6：
SESO Memory Devices / Kazuo Yano8.7：
How Nanotechnologies Solve Real Problems / 9.1：
New Direction of Electronics / 9.1.2：
Conventional Memory Technologies / 9.2：
Classification of Conventional Memories / 9.2.1：
Origin of DRAM Power Consumption / 9.2.2：
Bandgap Enlargement in Nanosilicon / 9.3：
SESO Transistor / 9.4：
History: Single-Electron Devices to SESO / 9.4.1：
Fabricated SESO Transistor / 9.4.2：
SESO Memory / 9.5：
Memory-Technology Comparison / 9.6：
SESO as On-Chip RAM Component / 9.7：
Conclusions / 9.8：
Few Electron Devices and Memory Circuits / Kazuo Nakazato ; Haroon AhmedChapter 10：
Current Semiconductor Memories / 10.1：
Limitations of the DRAM / 10.2.1：
DRAM Gain Cell / 10.2.2：
A New DRAM Gain Cell - The PLEDM / 10.3：
PLEDTR / 10.3.1：
PLEDM Cell / 10.3.2：
Single-Electron Memory / 10.4：
Single-Electron Devices / 10.4.1：
Operation Principle of Single-Electron Memory / 10.4.2：
Local Stability / 10.4.2.1：
Global Stability / 10.4.2.2：
Experimental Single-Electron Memory / 10.4.3：
First Experimental Single-Electron Memory / 10.4.3.1：
Silicon Single-Electron Memory / 10.4.3.2：
Single-Electron Memory Array / 10.4.4：
Single-Electron Logic Devices / Yasuo Takahashi ; Yukinori Ono ; Akira Fujiwara ; Hiroshi Inokawa10.5：
Single-Electron Transistor (SET) / 11.1：
Fabrication of Si SETs / 11.3：
Logic Circuit Applications of SETs / 11.4：
Fundamentals of SET Logic / 11.4.1：
Merged SET and MOSFET Logic / 11.4.2：
CMOS-Type Logic Circuit / 11.4.3：
Pass-Transistor Logic / 11.4.4：
Multigate SET / 11.4.5：
Multiple-Valued Operation / 11.4.6：
Index / 11.5：
Physics of Silicon Nanodevices / David K. Ferry ; Richard Akis ; Matthew J. Gilbert ; Stephen M. RameyChapter 1：
Introduction / 1.1：
Small MOSFETs / 1.2：
14.

電子ブック
ＥＢ
14. Semiconductors : bonds and bands (: electronic bk)
David K Ferry
出版情報: [Bristol] : IOP, 2013  1 online resource (various pagings)
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15.

電子ブック
ＥＢ
15. Semiconductors : bonds and bands. 2nd ed
David K Ferry
出版情報: IOP science  1 online resource (various pagings)
シリーズ名: IOP ebooks
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16.

電子ブック
ＥＢ
16. Hot carriers in semiconductors
David K. Ferry
出版情報: IOP science  1 online resource (various pagings)
シリーズ名: IOP ebooks
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17.

図書
図書
17. Hot carriers in semiconductors : proceedings of the sixth international conference, Scottsdale, Arizona, U.S.A., 23-28 July 1989
edited by D.K. Ferry and L.A. Akers
出版情報: Oxford : Pergamon Press, 1989  p. 1065-1922
シリーズ名: Solid state electronics : an international journal ; vol. 32, no. 12
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18.

図書
図書
18. 詳説半導体物性
David K. Ferry [著] ; 落合勇一, 関根智幸, 青木伸之共訳
出版情報: 東京 : コロナ社, 2016.5  vi, 229p ; 22cm
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目次情報: 続きを見る
電子構造 : 周期ポテンシャル
ポテンシャルと擬ポテンシャル ほか
格子力学 : 格子波とフォノン
変形可能な固体中の波 ほか
電子‐フォノン相互作用 : 基本相互作用
音響型変形ポテンシャル散乱 ほか
キャリヤ伝導 : ボルツマン輸送方程式
輸送現象におけるスピンの効果 ほか
電子構造 : 周期ポテンシャル
ポテンシャルと擬ポテンシャル ほか
格子力学 : 格子波とフォノン
19.

図書
図書
19. Transport in nanostructures. 2nd ed (: hbk.)
David K. Ferry, Stephen M. Goodnick, Jonathan Bird
出版情報: Cambridge [U.K.] : Cambridge University Press, 2009  x, 659 p. ; 26 cm
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目次情報: 続きを見る
Preface
Acknowledgements
Introduction / 1：
Nanostructures: the impact / 1.1：
Mesoscopic observables in nanostructures / 1.2：
Space and time scales / 1.3：
Nanostructures and nanodevices / 1.4：
An introduction to the subsequent chapters / 1.5：
What is omitted / 1.6：
Quantum confined systems / 2：
Nanostructure materials / 2.1：
Quantization in heterojunction systems / 2.2：
Lateral confinement: quantum wires and quantum dots / 2.3：
Electronic states in quantum wires and dots / 2.4：
Magnetic field effects in quantum confined systems / 2.5：
Screening and collective excitations in low-dimensional systems / 2.6：
Homogeneous transport in low-dimensional systems / 2.7：
Transmission in nanostructures / 3：
Tunneling in planar barrier structures / 3.1：
Current in resonant tunneling diodes / 3.2：
Landauer formula / 3.3：
The multi-channel case / 3.4：
Transport in quantum waveguide structures / 3.5：
The quantum Hall effects / 4：
The integer quantum Hall effect in two-dimensional electron systems / 4.1：
Edge-state propagation in nanostructures / 4.2：
The fractional quantum Hall effect / 4.3：
The many-body picture / 4.4：
Ballistic transport in quantum wires / 5：
Conductance quantization in quantum point contacts / 5.1：
Non-integer conductance quantization in quantum point contacts / 5.2：
Some ballistic device concepts / 5.3：
Quantum dots / 6：
Fundamentals of single-electron tunneling / 6.1：
Single-electron tunneling in semiconductor quantum dots / 6.2：
Coupled quantum dots as artificial molecules / 6.3：
Quantum interference due to spatial wave function coherence in quantum dots / 6.4：
Weakly disordered systems / 7：
Disordered semiconductors / 7.1：
Conductivity / 7.2：
Weak localization / 7.3：
Universal conductance fluctuations / 7.4：
Green's functions in disordered materials / 7.5：
Temperature decay of fluctuations / 8：
Temperature decay of coherence / 8.1：
The role of temperature on the fluctuations / 8.2：
Electron-electron interaction effects / 8.3：
Nonequilibrium transport and nanodevices / 8.4：
Nonequilibrium transport in mesoscopic structures / 9.1：
Semiconductor nanodevices in the real world / 9.2：
Quantum simulations via the scattering matrix / 9.3：
Real-time Green's functions / 9.4：
Index
Preface
Acknowledgements
Introduction / 1：
文献の複写および貸借の依頼を行う
 文献複写・貸借依頼