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1.

図書
図書
1. Solution synthesis of inorganic functional materials - films, nanoparticles and nanocomposites : symposium held April 1-5, 2013, San Francisco, California U.S.A. (: hbk.)
editors, Menka Jain ... [et al.]
出版情報: Warrendale, Pa. : Materials Research Society , Cambridge : Cambridge University Press, 2013  xi, 185 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 1547
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2.

図書
図書
2. New functional materials and emerging device architectures for nonvolatile memories : symposium held April 25-29, 2011, San Francisco, California, U.S.A. (: hard)
editors, Dirk J. Wouters ... [et al.]
出版情報: Warrendale, Pa. : Materials Research Society , Cambridge : Cambridge University Press, 2011  xi, 159 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 1337
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Preface
Acknowledgments
Materials Research Society Symposium Proceedings
Advanced Flash and Nano-Floating Gate Memories
* Scaling Challenges for NAND and Replacement Memory Technology / Kirk Prall
Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories / J. Amouroux ; V. Delia Marca ; E. Petit ; D. Deleruyelle ; M. Putero ; Ch. Muller ; P. Boivin ; E. Jalaguier ; J-P. Colonna ; P. Maillot ; L. Fares
Matrix Density Effect on Morphology of Germanium Nanocrystals Embedded in Silicon Dioxide Thin Films / Arif S. Alagoz ; Mustafa F. Genisel ; Steinar Foss ; Terje G. Finstad ; Rasit Turan
Temperature Effects on Charge Transfer Mechanisms of nc-ITO Embedded ZrHfO High-k Nonvolatile Memory Devices / Chia-Han Yang ; Yue Kuo ; Chen-Han Lin ; Way Kuo
Enhancement of Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO2 Nanocomposite by Inserting HfO2/SiO2 Blocking Oxide Layer / Kuo-Chang Chiang ; Tsung-Eong Hsieh
*Invited Paper
Resistive Switching Memories
Complementary Resistive Switches (CRS): High Speed Performance for the Application in Passive Nanocrossbar Arrays / Roland Rosezin ; Eike Linn ; Lutz Nielen ; Carsten Kügeler ; Rainer Bruchhaus ; Rainer Waser
Influence of Copper on the Switching Properties of Hafnium Oxide-based Resistive Memory / B.D. Briggs ; S.M. Bishop ; K.D. Leedy ; B. Butcher ; R.L. Moore ; S.W. Novak ; N.C. Cady
Fabrication and Characterization of Copper Oxide Resistive Memory Devices / Z.P. Rice ; S. Addepalli ; N.R. McDonald
Influence of Process Parameters on Resistive Switching in MOCVD NiO Films / X.P. Wang ; D.J. Wouters ; M. Toeller ; J. Meersschaut ; L. Goux ; Y.Y. Chen ; B. Govoreanu ; L. Pantisano ; R. Degraeve ; M. Jurczak ; L. Altimime ; J. Kittl
Understanding the Role of Process Parameters on the Characteristics of Transition Metal Oxide RRAM/Memristor Devices / Branden Long ; Yibo Li ; Rashmi Jha
Memristive Switches with Two Switching Polarities in a Forming Free Device Structure / Christoph R. Hermes
WOx Resistive Memory Elements for Scaled Flash Memories / S. Gorji Ghalamestani ; D.E. Díaz-Droguett ; D. Wouters ; J.G. Lisoni
Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope / K. Kinoshita ; T. Yoda ; S. Kishida
A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices
Switching Speed in Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor / Paulo F. Rocha ; Henrique L. Gomes ; Asal Kiazadeh ; Qian Chen ; Dago M. de Leeuw ; Stefan C.J. Meskers
Retentivity of RRAM Devices Based on Metal / YBCO Interfaces / A. Schulman ; C. Acha
Electro-forming of Vacancy-doped Metal-SrTiO3-metal Structures / Florian Hanzig ; Juliane Seibt ; Hartmut Stoecker ; Barbara Abendroth ; Dirk C. Meyer
Phase Change, Ferroelectric, and Organic Memories
Interface Characterization of Metals and Metal-nitrides to Phase Change Materials / Deepu Roy ; Dirk J. Gravesteijn ; Rob A.M. Wolters
Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation / Xilin Zhou ; Liangcai Wu ; Zhitang Song ; Feng Rao ; Kun Ren ; Yan Cheng ; Bo Liu ; Dongning Yao ; Songlin Feng ; Bomy Chen
* Recent Progress in Downsizing FeFETs for Fe-NAND Application / Le Van Hai ; Mitsue Takahashi ; Shigeki Sakai
Lanthanum Oxide Capping Layer for Solution-Processed Ferroelectric-Gate Thin-Film Transistors / Tue T. Phan ; Trinh N.Q. Bui ; Takaaki MiyasakoThanh V. Pham ; Eisuke Tokumitsu ; Tatsuya Shimoda
New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices / Mikhail Dronov ; Ivan Belogorohov ; Dmitry Khokhlov
Planar Non-volatile Memory Based on Metal Nanoparticles / A. Kiazadeh ; H.L. Gomes ; A.R. Da Costa ; P. Rocha ; Q. Chen ; J.A. Moreira ; D.M. De Leeuw ; S.C.J. Meskers
Author Index
Subject Index
Preface
Acknowledgments
Materials Research Society Symposium Proceedings
3.

図書
図書
3. Rare-earth doping of advanced materials for photonic applications--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A. (: hard)
editors, Volkmar Dierolf ... [et al.]
出版情報: Warrendale, Pa. : Materials Research Society , Cambridge : Cambridge University Press, 2012  ix, 119 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 1342
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ZnO, GaN, Phosphors / Part I：
Rare earth materials challenge to national defense: material scientist's perspective / Shiva Hullavarad1：
Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy / Atsushi Nishikawa2：
Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy / Shuichi Emura3：
Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy / Jonathan Poplawsky4：
Damage formation in GaN under medium energy range implantation of rare earth ions: a combined TEM, XRD and RBS/C investigation / Bertrand Lacroix5：
Insulating Materials: Lasers and Phosphors / Part II：
Upconversion in rare-earth ion-doped NaYF4 crystals and nanocolloids / Darayas Patel6：
Preparation of luminescent inorganic core/shell-structured nanoparticles / Moritz Milde7：
Vacuum deposited erbium-doped NIR luminescent organic thin films for 1.5 ïü¡m optical amplication applications / Christophe Galindo8：
Multicolor luminescence from Ca3Y2(SiO4)3:Eu2+, Eu3+ material / Anna Dobrowolska9：
Efficient near-infrared luminescence and energy transfer in Nd-Bi co-doped zeolites / Zhenhua Bai10：
Red-emitting Ca(1-x)SrxS:Eu2+ phosphors as light converters for plant-growth applications / Miroslaw Batentschuk11：
Photostimulable fluorescent nanoparticles for biological imaging / Andres Osvet12：
Imaging upconversion from NaYF4:Er:Yb nanoparticles on Au and Ag nanostructured substrates / Steve Smith13：
Rare Earth Ions in Group III - Nitrides / Part III：
Ultraviolet light emitting devices using AlGdN / Takashi Kita14：
Theoretical investigation of Er-O co-doping in hexagonal GaN / Simone Sanna15：
Photoluminescence of Eu-doped GaN / Kevin O'Donnell16：
Site selective magneto-optical studies of Eu ions in gallium nitride / Nathaniel Woodward17：
ZnO, GaN, Phosphors / Part I：
Rare earth materials challenge to national defense: material scientist's perspective / Shiva Hullavarad1：
Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy / Atsushi Nishikawa2：
4.

図書
図書
4. Amorphous and polycrystalline thin-film silicon science and technology--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.
editors, Baojie Yan ... [et al.]
出版情報: Warrendale, Pa. : Materials Research Society , Cambridge : Cambridge University Press, 2012  xvi, 466 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 1321
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Solar Cells / Part I：
Polycrystalline Films / Part II：
Thin Film Silicon Alloys / Part III：
Simulation and Characterization / Part IV：
Nanostructures / Part V：
Growth Mechanism / Part VI：
Sensors and Novel Devices / Part VII：
Solar Cells / Part I：
Polycrystalline Films / Part II：
Thin Film Silicon Alloys / Part III：
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