Crystal Properties and Growth of Semiconductors / 1: |
Atoms and Electrons / 2: |
Energy Bands and Charge Carriers in Semiconductors / 3: |
Excess Carriers in Semiconductors / 4: |
Junctions / 5: |
Field-Effect Transistors / 6: |
Bipolar Junction Transistors / 7: |
Optoelectronic Devices / 8: |
Integrated Circuits / 9: |
Negative Conductance Microwave Devices / 10: |
Power Devices / 11: |
Definitions of Commonly Used Symbols / Appendix I: |
Physical Constants and Conversion Factors / Appendix II: |
Properties of Semiconductor Materials / Appendix III: |
Derivation of the Density of States in the Conduction Band / Appendix IV: |
Derivation of Fermi-Dirac Statistics / Appendix V: |
Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature / Appendix VI: |
Solid Solubilities of Impurities in Si / Appendix VII: |
Diffusivities of Dopants in Si and SiO2 / Appendix VIII: |
Projected Range and Straggle as a Function of Implant Energy in Si, SiO2 and GaAs / Appendix IX: |
Index |
Crystal Properties and Growth of Semiconductors / 1: |
Atoms and Electrons / 2: |
Energy Bands and Charge Carriers in Semiconductors / 3: |