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図書
図書
1. Solid state electronic devices. 5th ed
Ben G. Streetman and Sanjay Banerjee
出版情報: Upper Saddle River, N.J. : Prentice Hall, c2000  xviii, 558 p. ; 25 cm
シリーズ名: Prentice-Hall series in solid state physical electronics
所蔵情報: loading…
目次情報: 続きを見る
Crystal Properties and Growth of Semiconductors / 1：
Atoms and Electrons / 2：
Energy Bands and Charge Carriers in Semiconductors / 3：
Excess Carriers in Semiconductors / 4：
Junctions / 5：
Field-Effect Transistors / 6：
Bipolar Junction Transistors / 7：
Optoelectronic Devices / 8：
Integrated Circuits / 9：
Negative Conductance Microwave Devices / 10：
Power Devices / 11：
Definitions of Commonly Used Symbols / Appendix I：
Physical Constants and Conversion Factors / Appendix II：
Properties of Semiconductor Materials / Appendix III：
Derivation of the Density of States in the Conduction Band / Appendix IV：
Derivation of Fermi-Dirac Statistics / Appendix V：
Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature / Appendix VI：
Solid Solubilities of Impurities in Si / Appendix VII：
Diffusivities of Dopants in Si and SiO2 / Appendix VIII：
Projected Range and Straggle as a Function of Implant Energy in Si, SiO2 and GaAs / Appendix IX：
Index
Crystal Properties and Growth of Semiconductors / 1：
Atoms and Electrons / 2：
Energy Bands and Charge Carriers in Semiconductors / 3：
2.

図書
図書
2. Solid state electronic devices
[by] Ben G. Streetman
出版情報: Englewood Cliffs, N.J. : Prentice-Hall, [1972]  xv, 463 p ; 24 cm
シリーズ名: Prentice-Hall series in solid state physical electronics
Prentice-Hall electrical engineering series
所蔵情報: loading…
目次情報: 続きを見る
Crystal Properties and Growth of Semiconductors / 1：
Atoms and Electrons / 2：
Energy Bands and Charge Carriers in Semiconductors / 3：
Excess Carriers in Semiconductors / 4：
Junctions / 5：
Field-Effect Transistors / 6：
Bipolar Junction Transistors / 7：
Optoelectronic Devices / 8：
Integrated Circuits / 9：
Negative Conductance Microwave Devices / 10：
Power Devices / 11：
Definitions of Commonly Used Symbols / Appendix I：
Physical Constants and Conversion Factors / Appendix II：
Properties of Semiconductor Materials / Appendix III：
Derivation of the Density of States in the Conduction Band / Appendix IV：
Derivation of Fermi-Dirac Statistics / Appendix V：
Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature / Appendix VI：
Solid Solubilities of Impurities in Si / Appendix VII：
Diffusivities of Dopants in Si and SiO2 / Appendix VIII：
Projected Range and Straggle as a Function of Implant Energy in Si, SiO2 and GaAs / Appendix IX：
Index
Crystal Properties and Growth of Semiconductors / 1：
Atoms and Electrons / 2：
Energy Bands and Charge Carriers in Semiconductors / 3：
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