Basics Physics and Materials Technology of GaN LEDs and LDs / Steven P. DenBaars1.: |
Introduction / 1.1: |
Historical Evolution of LED Technology / 1.1.1: |
Basic Physics of LEDs: Injection Luminescence / 1.2: |
Direct and Indirect Band-Gap Material / 1.2.1: |
Radiative Recombination / 1.2.2: |
External Quantum Efficiency / 1.2.3: |
Luminous Efficiency / 1.2.4: |
Injection Efficiency / 1.2.5: |
Heterojunction vs. Homojunction LED Materials / 1.2.6: |
Quantum Well LEDs / 1.2.7: |
LED Materials Selection / 1.3: |
Energy Band Structure/Lattice Constants / 1.3.1: |
GaN Physical Properties / 1.3.2: |
GaN Based LED Structures / 1.3.3: |
Crystal Growth / 1.4: |
MOCVD Growth / 1.4.1: |
MOCVD Systems for Production / 1.4.2: |
Molecular Beam Epitaxy (MBE) / 1.4.3: |
Chloride Vapor Phase Epitaxy / 1.4.4: |
Group-III Nitride Materials Growth Issues / 1.5: |
Substrates / 1.5.1: |
Nucleation Layer Technology / 1.5.2: |
Growth and Doping of GaN / 1.5.3: |
Growth of AlGaN and AlGaN/GaN Heterostructures / 1.5.4: |
Growth of InGaN and InGaN/GaN Heterostructures / 1.5.5: |
Conclusions / 1.6: |
References / 1.7: |
Theoretical Analysis of Optical Gain Spectra / Takeshi Uenoyama ; Masakatsu Suzuki2.: |
Optical Gains Spectra by Many-Body Approach / 2.1: |
Linear Response Theory / 2.2.1: |
Screening Effects / 2.2.2: |
Self-Energies of Electron Gas / 2.2.3: |
Coulomb Enhancement / 2.2.4: |
Electronic Band Structures / 2.3: |
Electronic Band Structures of Bulk GaN and AlN / 2.3.1: |
Strain Effect on Electronic Band Structures / 2.3.2: |
k.p Theory for Wurtzite / 2.3.3: |
Physical Parameters / 2.3.4: |
Subband Structures of GaN/AlGaN Quantum Wells / 2.3.5: |
Subband in Wurtzite Quantum Wells / 2.3.6: |
Optical Gain Spectra of III-V Nitrides LD Structures / 2.4: |
Free Carrier Model / 2.4.1: |
Coulomb Enhancement (Excitonic Effects) in the Optical Gain / 2.4.2: |
Optical Gain with Localized States / 2.4.3: |
Electrical Conductivity Control / Chris G. Van de Walle2.5: |
Doping / 3.1: |
Theory of Native Defects and Impurities / 3.1.1: |
n-type Doping / 3.1.2: |
p-type Doping / 3.1.3: |
Band Offsets / 3.2: |
Theory of Band Offsets at Nitride Interfaces / 3.2.1: |
Experimental Results for Band Offsets / 3.2.2: |
Discussion / 3.2.3: |
Acknowledgments / 3.3: |
Crystal Defects and Device Performance in LEDs and LDs / Fernando A. Ponce3.4: |
CrystalGrowth and Microstructure / 4.1: |
Lattice Structure of the Nitride Semiconductors / 4.1.1: |
Thin Film Epitaxy and Substrates / 4.1.2: |
Epitaxy on SiC Substrates / 4.2: |
Epitaxy on Sapphire Substrates / 4.3: |
AlN as a Buffer Layer / 4.3.1: |
GaN as a Buffer Layer / 4.3.2: |
Homoepitaxial Growth of GaN / 4.4: |
Defect Microstructurein LEDs and LDs / 4.5: |
Large Defect Densities in High Performance Materials / 4.5.1: |
Columnar Structure of GaN on Sapphire / 4.5.2: |
Tilt Boundaries / 4.5.3: |
Twist Boundaries / 4.5.4: |
Polarity and Electronic Properties / 4.6: |
The Nature of the Dislocation / 4.7: |
Determination of the Burgers Vector / 4.7.1: |
Nanopipes and Inversion Domains / 4.7.2: |
Spatial Variation of Luminescence / 4.8: |
Undoped Material / 4.8.1: |
Doped Materials / 4.8.2: |
Microscopic Properties of In[subscript x]Ga[subscript 1-x]N Quantum Wells / 4.9: |
The Nature of the InGaN/GaN Interface / 4.9.1: |
Microstructure of Quantum Wells / 4.9.2: |
Spatial Variation of the luminescence of In[subscript x]Ga[subscript 1-x]N Quantum Wells / 4.9.3: |
Microstructure and Device Performance / 4.10: |
Stress and Point Defect Structure / 4.10.1: |
Minimization of Strain by Maximizing Film Smoothness / 4.10.2: |
The Role of Dislocations in Strain Relaxation / 4.10.3: |
The Role of Nanopipes and Extension to ELOG Structures / 4.10.4: |
Emission Mechanisms and Excitons in GaN and InGaN Bulk and QWs / Shigefusa F. Chichibu ; Yoichi Kawakami ; Takayuki Sota4.11: |
GaN Bulk Crystals / 5.1: |
Free and Bound Excitons / 5.2.1: |
Biexcitons in GaN / 5.2.2: |
Strain Effects / 5.2.3: |
Phonons in Nitrides / 5.2.4: |
InGaN Bulk and QWs for Practical Devices / 5.3: |
Quantized Energy Levels / 5.3.1: |
Piezoelectric Field / 5.3.2: |
Spontaneous Emission of Localized Excitons / 5.3.3: |
Localized Exciton Dynamics / 5.3.4: |
Optical Gain in Nitrides / 5.3.5: |
Life Testing and Degradation Mechanisms in InGaN LEDs / Marek Osinski ; Daniel L. Barton5.4: |
Life Testing of InGaN/AlGaN/GaN LEDs / 6.1: |
Life Testing Primer / 6.2.1: |
Potential Degradation Regions in LEDs / 6.2.2: |
Life Test System Considerations / 6.2.3: |
Results of Life Tests on Nichia Blue InGaN/AlGaN/GaN Double Heterostructure LEDs / 6.2.4: |
Analysis of Early Test Failures / 6.3: |
Analysis of LED #19 / 6.3.1: |
Analysis of LEDs #16 and 17 / 6.3.2: |
Effects of UV Emission on Plastic Transparency / 6.4: |
Thermal Degradation of Plastic Package Transparency / 6.5: |
Degradation of GaN-Based LEDs Under High Current Stress / 6.6: |
Double Heterostructure Device Testing / 6.7: |
EBIC Analysis / 6.8: |
Pulsed Current Stress Experiments and Results on Quantum Well LEDs / 6.9: |
Failure Analysis of Degraded Quantum Well LEDs / 6.10: |
Summary / 6.11: |
Development and Future Prospects of GaN-based LEDs and LD / Shuji Nakamura6.13: |
Properties of InGaN-based LEDs / 7.1: |
Amber LEDs / 7.1.1: |
UV/Blue/Green LEDs / 7.1.3: |
Roles of Dislocations in InGaN-Based LEDs / 7.1.4: |
LDs Grown on Sapphire Substrate / 7.2: |
LDs Grown on Sapphire Substrates / 7.2.1: |
ELOG Substrate / 7.2.3: |
InGaN-Based LDs Grown on ELOG Substrates / 7.2.4: |
LDs Grown on GaN Substrate / 7.3: |
Free-Standing GaN Substrates / 7.3.1: |
Characteristics of LDs / 7.3.2: |
Future Prospects of InGaN-based Emitting Devices / 7.4: |
Appendix / 7.5: |
Parameters Table |
Subject Index |
Basics Physics and Materials Technology of GaN LEDs and LDs / Steven P. DenBaars1.: |
Introduction / 1.1: |
Historical Evolution of LED Technology / 1.1.1: |
Basic Physics of LEDs: Injection Luminescence / 1.2: |
Direct and Indirect Band-Gap Material / 1.2.1: |
Radiative Recombination / 1.2.2: |