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1.

図書

図書
Junko Habasaki
出版情報: Singapore : Jenny Stanford, c2021  xx, 318 p. ; 24 cm
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2.

図書

図書
edited by Dong Kee Yi, Georgia C. Papaefthymiou
出版情報: Boca Raton, Fla. : CRC Press, Taylor & Francis Group, c2014  xvii, 448 p., [24] p. of plates ; 24 cm
シリーズ名: Advances in materials science and engineering
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3.

図書

図書
Thomas Heinzel
出版情報: Weinheim : Wiley-VCH, c2003  337 p. ; 25 cm
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目次情報: 続きを見る
Introduction / 1:
Preliminary remarks / 1.1:
Mesoscopic transport / 1.2:
Ballistic transport / 1.2.1:
The quantum Hall effect and Shubnikov - de Haas oscillations / 1.2.2:
Size quantization / 1.2.3:
Phase coherence / 1.2.4:
Single electron tunnelling and quantum dots / 1.2.5:
Superlattices / 1.2.6:
Samples and experimental techniques / 1.2.7:
An Update of Solid State Physics / 2:
Crystal structures / 2.1:
Electronic energy bands / 2.2:
Occupation of energy bands / 2.3:
The electronic density of states / 2.3.1:
Occupation probability and chemical potential / 2.3.2:
Intrinsic carrier concentration / 2.3.3:
Envelope wave functions / 2.4:
Doping / 2.5:
Diffusive transport and the Boltzmann equation / 2.6:
The Boltzmann equation / 2.6.1:
The conductance predicted by the simplified Boltzmann equation / 2.6.2:
The magneto-resistivity tensor / 2.6.3:
Scattering mechanisms / 2.7:
Screening / 2.8:
Surfaces, Interfaces, and Layered Devices / 3:
Electronic surface states / 3.1:
Surface states in one dimension / 3.1.1:
Surfaces of 3-dimensional crystals / 3.1.2:
Band bending and Fermi level pinning / 3.1.3:
Semiconductor-metal interfaces / 3.2:
Band alignment and Schottky barriers / 3.2.1:
Ohmic contacts / 3.2.2:
Semiconductor heterointerfaces / 3.3:
Field effect transistors and quantum wells / 3.4:
The silicon metal-oxide-semiconductor FET (Si-MOSFET) / 3.4.1:
The Ga[Al]As high electron mobility transistor (GaAs-HEMT) / 3.4.2:
Other types of layered devices / 3.4.3:
Quantum confined carriers in comparison to bulk carriers / 3.4.4:
Experimental Techniques / 4:
Sample fabrication / 4.1:
Single crystal growth / 4.1.1:
Growth of layered structures / 4.1.2:
Lateral patterning / 4.1.3:
Metallization / 4.1.4:
Bonding / 4.1.5:
Elements of cryogenics / 4.2:
Properties of liquid helium / 4.2.1:
Helium cryostats / 4.2.2:
Electronic measurements on nanostructures / 4.3:
Sample holders / 4.3.1:
Application and detection of electronic signals / 4.3.2:
Important Quantities in Mesoscopic Transport / 5:
Magnetotransport Properties of Quantum Films / 6:
Landau quantization / 6.1:
2DEGs in perpendicular magnetic fields / 6.1.1:
The chemical potential in strong magnetic fields / 6.1.2:
The quantum Hall effect / 6.2:
Phenomenology / 6.2.1:
Origin of the integer quantum Hall effect / 6.2.2:
The quantum Hall effect and three dimensions / 6.2.3:
Elementary analysis of Shubnikov-de Haas oscillations / 6.3:
Some examples of magnetotransport experiments / 6.4:
Quasi-two-dimensional electron gases / 6.4.1:
Mapping of the probability density / 6.4.2:
Displacement of the quantum Hall plateaux / 6.4.3:
Parallel magnetic fields / 6.5:
Quantum Wires and Quantum Point Contacts / 7:
Diffusive quantum wires / 7.1:
Basic properties / 7.1.1:
Boundary scattering / 7.1.2:
Ballistic quantum wires / 7.2:
Conductance quantization in QPCs / 7.2.1:
Magnetic field effects / 7.2.3:
The "0.7 structure" / 7.2.4:
Four-probe measurements on ballistic quantum wires / 7.2.5:
The Landauer-Buttiker formalism / 7.3:
Edge states / 7.3.1:
Edge channels / 7.3.2:
Further examples of quantum wires / 7.4:
Conductance quantization in conventional metals / 7.4.1:
Carbon nanotubes / 7.4.2:
Quantum point contact circuits / 7.5:
Non-ohmic behavior of collinear QPCs / 7.5.1:
QPCs in parallel / 7.5.2:
Concluding remarks / 7.6:
Electronic Phase Coherence / 8:
The Aharonov-Bohm effect in mesoscopic conductors / 8.1:
Weak localization / 8.2:
Universal conductance fluctuations / 8.3:
Phase coherence in ballistic 2DEGs / 8.4:
Resonant tunnelling and S - matrices / 8.5:
Singe Electron Tunnelling / 9:
The principle of Coulomb blockade / 9.1:
Basic single electron tunnelling circuits / 9.2:
Coulomb blockade at the double barrier / 9.2.1:
Current-voltage characteristics: the Coulomb staircase / 9.2.2:
The SET transistor / 9.2.3:
SET circuits with many islands; the single electron pump / 9.3:
Quantum Dots / 10:
Phenomenology of quantum dots / 10.1:
The constant interaction model / 10.2:
Beyond the constant interaction model / 10.3:
Shape of conductance resonances and current-voltage characteristics / 10.4:
Other types of quantum dots / 10.5:
Mesoscopic Superlattices / 11:
One-dimensional superlattices / 11.1:
Two-dimensional superlattices / 11.2:
SI and cgs Units / A:
Appendices
Correlation and Convolution / B:
Fourier transofrmation / B.1:
Convolutions / B.2:
Correlation functions / B.3:
Capacitance Matrix and Electrostatic Energy / C:
The Transfer Hamiltonian / D:
Solutions to Selected Exercises / E:
References
Index
Introduction / 1:
Preliminary remarks / 1.1:
Mesoscopic transport / 1.2:
4.

図書

図書
Jin Z. Zhang ... [et al.]
出版情報: New York ; London : Kluwer Academic/Plenum, c2003  xvii, 316 p ; 26 cm
シリーズ名: Nanostructure science and technology / series editor, David J. Lockwood
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5.

図書

図書
V.A. Shchukin, N.N. Ledentsov, D. Bimberg
出版情報: New York : Springer, 2003  xii, 387p. ; 25 cm
シリーズ名: Nanoscience and technology
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6.

図書

図書
edited by Tapan Chatterji
出版情報: Dordrecht : Kluwer Academic Publishers, c2004  xv, 447 p. ; 25 cm
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7.

図書

図書
Gabor L. Hornyak ... [et al.]
出版情報: Boca Raton, Fl. ; London : CRC : Taylor & Francis, c2009  xxxiv, 1593 p. ; 26 cm
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目次情報: 続きを見る
The Perspective
The Tools
The Physics
The Chemistry
The Biology
The Next Step
The Engineering
The Materials
Devices and Applications
Overview
The Perspective
The Tools
The Physics
8.

図書

図書
editors, Qing Liu, Hongjun Wang
出版情報: Singapore : World Scientific, c2014  xxiii, 521 p. ; 26 cm
シリーズ名: Frontiers in nanobiomedical research ; v. 2
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9.

図書

図書
Guozhong Cao, Ying Wang
出版情報: Singapore : World Scientific, c2011  xiii, 581 p. ; 23 cm
シリーズ名: World scientific series in nanoscience and nanotechnology ; v. 2
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目次情報: 続きを見る
Preface to the Second Edition
Introduction / Chapter 1:
Emergence of Nanotechnology / 1.1:
Bottom-Up and Top-Down Approaches / 1.3:
Challenges in Nanotechnology / 1.4:
Scope of the Book / 1.5:
References
Physical Chemistry of Solid Surfaces / Chapter 2:
Surface Energy / 2.1:
Chemical Potential as a Function of Surface Curvature / 2.3:
Electrostatic Stabilization / 2.4:
Surface charge density / 2.4.1:
Electric potential at the proximity of solid surface / 2.4.2:
Van der Waals attraction potential / 2.4.3:
Interactions between two particles: DLVO theory / 2.4.4:
Steric Stabilization / 2.5:
Solvent and polymer / 2.5.1:
Interactions between polymer layers / 2.5.2:
Mixed steric and electric interactions / 2.5.3:
Summary / 2.6:
Zero-Dimensional Nanostructures: Nanoparticles / Chapter 3:
Nanoparticles Through Homogeneous Nucleation / 3.1:
Fundamentals of homogeneous nucleation / 3.2.1:
Subsequent growth of nuclei / 3.2.2:
Growth controlled by diffusion / 3.2.2.1:
Growth controlled by surface process / 3.2.2.2:
Synthesis of metallic nanoparticles / 3.2.3:
Influences of reduction reagents / 3.2.3.1:
Influences by other factors / 3.2.3.2:
Influences of polymer stabilizer / 3.2.3.3:
Synthesis of semiconductor nanoparticles / 3.2.4:
Synthesis of oxide nanoparticles / 3.2.5:
Introduction to sol-gel processing / 3.2.5.1:
Forced hydrolysis / 3.2.5.2:
Controlled release of ions / 3.2.5.3:
Vapor phase reactions / 3.2.6:
Solid-state phase segregation / 3.2.7:
Nanoparticles Through Heterogeneous Nucleation / 3.3:
Fundamentals of heterogeneous nucleation / 3.3.1:
Synthesis of nanoparticles / 3.3.2:
Kinetically Confined Synthesis of Nanoparticles / 3.4:
Synthesis inside micelles or using microemulsions / 3.4.1:
Aerosol synthesis / 3.4.2:
Growth termination / 3.4.3:
Spray pyrolysis / 3.4.4:
Template-based synthesis / 3.4.5:
Epitaxial Core-Shell Nanoparticles / 3.5:
One-Dimensional Nanostructures: Nanowires and Nanorods / 3.6:
Spontaneous Growth / 4.1:
Evaporation (dissolution)-condensation growth / 4.2.1:
Fundamentals of evaporation (dissolution)-condensation growth / 4.2.1.1:
Evaporation-condensation growth / 4.2.1.2:
Dissolution-condensation growth / 4.2.1.3:
Vapor (or solution)-liquid-solid (VLS or SLS) growth / 4.2.2:
Fundamental aspects of VLS and SLS growth / 4.2.2.1:
VLS growth of various nanowires / 4.2.2.2:
Control of the size of nanowires / 4.2.2.3:
Precursors and catalysts / 4.2.2.4:
Solution-liquid-solid growth / 4.2.2.5:
Stress-induced recrystallization / 4.2.3:
Template-Based Synthesis / 4.3:
Electrochemical deposition / 4.3.1:
Electrophoretic deposition / 4.3.2:
Template filling / 4.3.3:
Colloidal dispersion filling / 4.3.3.1:
Melt and solution filling / 4.3.3.2:
Chemical vapor deposition / 4.3.3.3:
Deposition by centrifugation / 4.3.3.4:
Converting through chemical reactions / 4.3.4:
Electrospinning / 4.4:
Lithography / 4.5:
Two-Dimensional Nanostructures: Thin Films / 4.6:
Fundamentals of Film Growth / 5.1:
Vacuum Science / 5.3:
Physical Vapor Deposition (PVD) / 5.4:
Evaporation / 5.4.1:
Molecular beam epitaxy (MBE) / 5.4.2:
Sputtering / 5.4.3:
Comparison of evaporation and sputtering / 5.4.4:
Chemical Vapor Deposition (CVD) / 5.5:
Typical chemical reactions / 5.5.1:
Reaction kinetics / 5.5.2:
Transport phenomena / 5.5.3:
CVD methods / 5.5.4:
Diamond films by CVD / 5.5.5:
Atomic Layer Deposition / 5.6:
Superlattices / 5.7:
Self-Assembly / 5.8:
Monolayers of organosilicon or alkylsilane derivatives / 5.8.1:
Monolayers of alkanethiols and sulfides / 5.8.2:
Monolayers of carboxylic acids, amines, and alcohols / 5.8.3:
Langmuir-Blodgett Films / 5.9:
Electrochemical Deposition / 5.10:
Sol-Gel Films / 5.11:
Special Nanomaterials / 5.12:
Carbon Fullerenes and Nanotubes / 6.1:
Carbon fullerenes / 6.2.1:
Fullerene-derived crystals / 6.2.2:
Carbon nanotubes / 6.2.3:
Micro and Mesoporous Materials / 6.3:
Ordered mesoporous structures / 6.3.1:
Random mesoporous structures / 6.3.2:
Crystalline microporous materials: Zeolites / 6.3.3:
Core-Shell Structures / 6.4:
Metal-oxide structures / 6.4.1:
Metal-polymer structures / 6.4.2:
Oxide-polymer nanostructures / 6.4.3:
Organic-Inorganic Hybrids / 6.5:
Class 1 hybrids / 6.5.1:
Class 2 hybrids / 6.5.2:
Intercalation Compounds / 6.6:
Nanocomposites and Nanograined Materials / 6.7:
Inverse Opals / 6.8:
Bio-Induced Nanomaterials / 6.9:
Nanostructures Fabricated by Physical Techniques / 6.10:
Photolithography / 7.1:
Phase-shifting photolithography / 7.2.2:
Electron beam lithography / 7.2.3:
X-ray lithography / 7.2.4:
Focused ion beam (FIB) lithography / 7.2.5:
Neutral atomic beam lithography / 7.2.6:
Nanomanipulation and Nanolithography / 7.3:
Scanning tunneling microscopy (STM) / 7.3.1:
Atomic force microscopy (AFM) / 7.3.2:
Near-field scanning optical microscopy (NSOM) / 7.3.3:
Nanomanipulation / 7.3.4:
Nanolithography / 7.3.5:
Soft Lithography / 7.4:
Microcontact printing / 7.4.1:
Molding / 7.4.2:
Nanoimprint / 7.4.3:
Dip-pen nanolithography / 7.4.4:
Assembly of Nanoparticles and Nanowires / 7.5:
Capillary forces / 7.5.1:
Dispersion interactions / 7.5.2:
Shear-force-assisted assembly / 7.5.3:
Electric-field-assisted assembly / 7.5.4:
Covalently linked assembly / 7.5.5:
Gravitational-field-assisted assembly / 7.5.6:
Template-assisted assembly / 7.5.7:
Other Methods for Microfabrication / 7.6:
Characterization and Properties of Nanomaterials / 7.7:
Structural Characterization / 8.1:
X-ray diffraction (XRD) / 8.2.1:
Small angle X-ray scattering (SAXS) / 8.2.2:
Scanning electron microscopy (SEM) / 8.2.3:
Transmission electron microscopy (TEM) / 8.2.4:
Scanning probe microscopy (SPM) / 8.2.5:
Gas adsorption / 8.2.6:
Chemical Characterization / 8.3:
Optical spectroscopy / 8.3.1:
Electron spectroscopy / 8.3.2:
Ion spectrometry / 8.3.3:
Physical Properties of Nanomaterials / 8.4:
Melting points and lattice constants / 8.4.1:
Mechanical properties / 8.4.2:
Optical properties / 8.4.3:
Surface plasmon resonance / 8.4.3.1:
Quantum size effects / 8.4.3.2:
Electrical conductivity / 8.4.4:
Surface scattering / 8.4.4.1:
Change of electronic structure / 8.4.4.2:
Quantum transport / 8.4.4.3:
Effect of microstructure / 8.4.4.4:
Ferroelectrics and dielectrics / 8.4.5:
Superparamagnetism / 8.4.6:
Applications of Nanomaterials / 8.5:
Molecular Electronics and Nanoelectronics / 9.1:
Nanobots / 9.3:
Biological Applications of Nanoparticles / 9.4:
Catalysis by Gold Nanoparticles / 9.5:
Bandgap Engineered Quantum Devices / 9.6:
Quantum well devices / 9.6.1:
Quantum dot devices / 9.6.2:
Nanomechanics / 9.7:
Carbon Nanotube Emitters / 9.8:
Energy Applications of Nanomaterials / 9.9:
Photoelectrochemical cells / 9.9.1:
Lithium-ion rechargeable batteries / 9.9.2:
Hydrogen storage / 9.9.3:
Thermoelectrics / 9.9.4:
Environmental Applications of Nanomaterials / 9.10:
Photonic Crystals and Plasmon Waveguides / 9.11:
Photonic crystals / 9.11.1:
Plasmon waveguides / 9.11.2:
Appendices / 9.12:
Index
Preface to the Second Edition
Introduction / Chapter 1:
Emergence of Nanotechnology / 1.1:
10.

図書

図書
Michael Köhler, Wolfgang Fritzsche
出版情報: Weinheim : Wiley-VCH, c2004  ix, 272 p ; 25 cm
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目次情報: 続きを見る
Introduction / 1:
The Way into the Nanoworld / 1.1:
From Micro- to Nanotechniques / 1.1.1:
Definition of Nanostructures / 1.1.2:
Insight into the Nanoworld / 1.1.3:
Intervention into the Nanoworld / 1.1.4:
Building Blocks of Nanotechnology / 1.2:
Interactions and Topology / 1.3:
The Microscopic Environment of the Nanoworld / 1.4:
Molecular Basics / 2:
Particles and Bonds / 2.1:
Chemical Bonds in Nanotechnology / 2.1.1:
Van der Waals Interactions / 2.1.2:
Dipole-Dipole Interactions / 2.1.3:
Ionic Interactions / 2.1.4:
Metal Bonds / 2.1.5:
Covalent Bonds / 2.1.6:
Coordinative Bonds / 2.1.7:
Hydrogen Bridge Bonds / 2.1.8:
Polyvalent Bonds / 2.1.9:
Chemical Structure / 2.2:
Binding Topologies / 2.2.1:
Building Blocks of Covalent Architecture / 2.2.2:
Units for a Coordinated Architecture / 2.2.3:
Building Blocks for Weakly Bound Aggregates / 2.2.4:
Assembly of Complex Structures through the Internal Hierarchy of Binding Strengths / 2.2.5:
Reaction Probability and Reaction Equilibrium / 2.2.6:
Microtechnological Foundations / 3:
Planar Technology / 3.1:
Preparation of Thin Layers / 3.2:
Condition and Preprocessing of the Substrate Surface / 3.2.1:
Layer Deposition from the Gas Phase / 3.2.2:
Evaporation / 3.2.3:
Sputtering / 3.2.4:
Chemical Vapor Deposition / 3.2.5:
Galvanic Deposition / 3.2.6:
Deposition by Spinning (Spin Coating) / 3.2.7:
Shadow-mask Deposition Techniques / 3.2.8:
Preparation of Ultrathin Inorganic Layers and Surface-bound Nanoparticles / 3.3:
Ultrathin Layers by Vacuum Deposition Processes / 3.3.1:
Deposition of Ultrathin Films from the Liquid Phase / 3.3.2:
In Situ Generation of Ultrathin Inorganic Films by Chemical Surface Modification / 3.3.3:
In Situ Formation of Ultrathin Inorganic Layers on Heteroorganic Materials / 3.3.4:
Immobilization of Nanoparticles / 3.3.5:
In Situ Formation of Inorganic Nanoparticles / 3.3.6:
Structure Generation and Fabrication of Lithographic Masks / 3.4:
Adhesive Mask Technique / 3.4.1:
Role of Resist in Photolithography / 3.4.2:
Serial Pattern Transfer / 3.4.3:
Group Transfer Processes / 3.4.4:
Maskless Structure Generation / 3.4.5:
Soft Lithography / 3.4.6:
Etching Processes / 3.5:
Etching Rate and Selectivity / 3.5.1:
Isotropic and Anisotropic Etching Processes / 3.5.2:
Lithographic Resolution in Etching Processes / 3.5.3:
Wet Etching Processes / 3.5.4:
Dry Etching Processes / 3.5.5:
High-resolution Dry Etching Techniques / 3.5.6:
Choice of Mask for Nanolithographic Etching Processes / 3.5.7:
Packaging / 3.6:
Biogenic and Bioanalogue Molecules in Technical Microstructures / 3.7:
Preparation of Nanostructures / 4:
Principles of Fabrication / 4.1:
Subtractive and Additive Creation of Nanostructures / 4.1.1:
Nanostructure Generation by Lift-off Processes / 4.1.2:
Principles of Nanotechnical Shape-definition and Construction / 4.1.3:
Nanomechanical Structure Generation / 4.2:
Scaling Down of Mechanical Processing Techniques / 4.2.1:
Local Mechanical Cutting Processes / 4.2.2:
Surface Transport Methods / 4.2.3:
Reshaping Processes / 4.2.4:
Printing Processes / 4.2.5:
Nanolithography / 4.3:
Structure Transfer by Electromagnetic Radiation / 4.3.1:
Nanolithographic Transfer of Groups of Elements by Optical Projection / 4.3.2:
EUV and X-ray Lithography / 4.3.3:
Multilayer Resists Techniques with Optical Pattern Transfer / 4.3.4:
Near-field Optical Structure Techniques with Contact Masks / 4.3.5:
Energetic Particles in Nanolithographic Structure Transfer / 4.3.6:
Electron Beam Lithography / 4.3.7:
Ion Beam Lithography / 4.3.8:
Atomic Beam Lithography / 4.3.9:
Molecular and Nanoparticle Beam Lithography / 4.3.10:
Direct Writing of Structures by a Particle Beam / 4.3.11:
Single-particle Beam Processes / 4.3.12:
Nanofabrication by Self-structuring Masks / 4.3.13:
Nanofabrication by Scanning Probe Techniques / 4.4:
Scanning Force Probes / 4.4.1:
Particle Manipulation With a Scanning Tunneling Microscope (STM) / 4.4.2:
Thermo-mechanical Writing of Nanostructures / 4.4.3:
Electrically Induced Structure Generation by Scanning Probe Techniques / 4.4.4:
Chemical Electrodeless Induced Scanning Probe Structure Generation / 4.4.5:
Nanostructure Generation by Optical Near-field Probes / 4.4.6:
Nanotechnical Structures / 5:
Inorganic Solids / 5.1:
Influence of Material Morphology on Nanoscale Pattern Processes / 5.1.1:
Inorganic Dielectrics / 5.1.2:
Metals / 5.1.3:
Semiconductors / 5.1.4:
Carbon / 5.1.5:
Organic Solids and Layer Structures / 5.2:
Solids Composed of Smaller Molecules / 5.2.1:
Organic Monolayer and Multilayer Stacks / 5.2.2:
Synthetic Organic Polymers / 5.2.3:
Biopolymers / 5.2.4:
Molecular Monolayer and Layer Architectures / 5.3:
Langmuir-Blodgett Films / 5.3.1:
Self-assembled Surface Films / 5.3.2:
Binding of Molecules on Solid Substrate Surfaces / 5.3.3:
Secondary Coupling of Molecular Monolayers / 5.3.4:
Categories of Molecular Layers / 5.3.5:
Molecular Coupling Components (Linkers) and Distance Components (Spacers) / 5.3.6:
Definition of Binding Spots on Solid Substrates / 5.3.7:
Architectures with Single Molecules / 5.4:
Single Molecules as Nanostructures / 5.4.1:
Strategies of Molecular Construction / 5.4.2:
Biogenic and Bioanalogous Nanoarchitectures / 5.4.3:
DNA Nanoarchitectures / 5.4.4:
Synthetic Supramolecules / 5.4.5:
Nanoparticles and Nanocompartments / 5.4.6:
Combination of Molecular Architectures and Nanoparticles with Planar Technical Structures / 5.5:
Characterization of Nanostructures / 6:
Geometrical Characterization / 6.1:
Layer Thickness and Vertical Structure Dimensions / 6.1.1:
Lateral Dimensions / 6.1.2:
Structures that Assist Measurement / 6.1.3:
Characterization of Composition of Layers and Surfaces / 6.2:
Atomic Composition / 6.2.1:
Characterization of the Chemical Surface / 6.2.2:
Functional Characterization of Nanostructures / 6.3:
Nanotransducers / 7:
Design of Nanotransducers / 7.1:
Nanomechanical Elements / 7.2:
Nanomechanical Sensors / 7.2.1:
Nanometer-precision Position Measurements with Conventional Techniques / 7.2.2:
Electrically Controlled Nanoactuators / 7.2.3:
Chemically Driven Nanoactuators / 7.2.4:
Rigidity of Nanoactuators / 7.2.5:
Nanoelectronic Devices / 7.3:
Electrical Contacts and Nanowires / 7.3.1:
Nanostructured Tunneling Barriers / 7.3.2:
Quantum Dots and Localization of Elementary Particles / 7.3.3:
Nanodiodes / 7.3.4:
Electron Islands and Nanotransistors / 7.3.5:
Nanoswitches, Molecular Switches and Logic Elements / 7.3.6:
Nanooptical Devices / 7.4:
Nanostructures as Optical Sensors / 7.4.1:
Nanostructured Optical Actuators / 7.4.2:
Nanooptical Switching and Conversion Elements / 7.4.3:
Magnetic Nanotransducers / 7.5:
Chemical Nanoscale Sensors and Actuators / 7.6:
Technical Nanosystems / 8:
What are Nanosystems? / 8.1:
Systems with Nanocomponents / 8.2:
Entire Systems with Nanometer Dimensions / 8.3:
Table of Examples
References
Index
Introduction / 1:
The Way into the Nanoworld / 1.1:
From Micro- to Nanotechniques / 1.1.1:
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