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1. Proceedings of the Symposium on Dielectric Phenomena in honor of the 70th birthday of Professor Robert H. Cole, January 14 and 15, 1985, Brown University, Providence, Rhode Island
sponsored by the Chemistry Department of Brown University and IEEE Electrical Insulation Society
出版情報: New York, NY : Institute of Electrical and Electronics Engineers , Piscataway, NJ : available from IEEE Service Center, Single Publication Sales Dept., c1983  73 p. ; 23 cm
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2.

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2. Low and High Dielectric Constant Materials : Materials Science, Processing, and Reliability Issues, proceedings of the fourth International Symposium and Thin Film Materials for Advanced Packaging Technologies : proceedings of the second International Symposium
editors, R. Singh ... [et al.] ; [sponsord by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 226 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-7
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3.

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3. Proceedings of the Second International Symposium on Low and High Dielectric Constant Materials : Materials Science, Processing, and Reliability Issues
editors, Hazara S. Rathore ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1997  viii, 262 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-8
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4.

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4. Proceedings of the Symposium on Interconnect and Contact Metallization
editor, Hazara S. Rathore ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1998  viii, 276 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-31
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5.

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5. Dielectric material integration for microelectronics
editors W.D. Brown ... [et al.] ; Dielectric Science and Technology, and Electronics Divisions [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1998  x, 366 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-3
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6. Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
editors, Terrence J. Riley ... [et al.]
出版情報: Pittsburgh, PA : Materials Research Society, c1997  ix, 434 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 470
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7.

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7. Proceedings of the 5th International Conference on Properties and Applications of Dielectric Materials, Seoul, Korea, May 25-30, 1997 (v. 1 : softbound - v. 2 : casebound)
sponsored by IEEE Dielectrics and Electrical Insulation Society ; organized by the Korean Institute of Electrical and Electronic Material Engineers
出版情報: New York : Institute of Electrical and Electronics Engineers, c1997  2 v. ; 28cm
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8.

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8. Epitaxial oxide thin films III : symposium held March 31-April 2, 1997, San Francisco, California, U.S.A.
editors, Darrell G. Schlom ... [et al.]
出版情報: Pittsburgh, Pa. : Materials Research Society, c1997  xiii, 419 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 474
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9.

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9. Epitaxial oxide thin films II : symposium held November 26-30, 1995, Boston, Massachusetts, U.S.A.
editors, James S. Speck ... [et al.]
出版情報: Pittsburgh, Pa. : Materials Research Society, c1996  xv, 562 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 401
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10.

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10. Proceedings of the 4th International Conference on Properties and Applications of Dielectric Materials, the University of Queensland, Brisbane, Australia, July 3-8, 1994 (v. 1 :softbound - v. 2:casebound)
sponsored by IEEE Dielectrics and Electrical Insulation Society
出版情報: New York : Institute of Electrical and Electronics Engineers, c1994  2 v. ; 28cm
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11.

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11. Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A.
editors, Steven R. J. Brueck ... [et al.]
出版情報: Pittsburgh, PA : Materials Research Society, c1995  xiii, 454 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 387
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12.

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12. Rapid thermal and integrated processing V : symposium held April 8-12, 1996, San Francisco, California, U.S.A.
editors, J.C. Gelpey ... [et al.]
出版情報: Pittsburgh, PA : Materials Research Society, c1996  xi, 389 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 429
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13.

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13. Fourth International Conference on Dielectric Materials, Measurements, and Applications, 10-13 September 1984, venue, University of Lancaster, UK (: pbk)
organised by the Science, Education & Technology, and Powers Divisions of the Institution of Electrical Engineers in association with the Institute of Electrical and Electronics Engineers Inc (United Kingdom and Republic of Ireland Section) ... [et al.]
出版情報: [London ; New York] : IEE, [c1984]  xiv, 313 p. ; 30 cm
シリーズ名: IEE conference publication ; no. 239
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14.

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14. Ceramic dielectrics : composition, processing, and properties
edited by Hung C. Ling and Man F. Yan
出版情報: Westerville, Ohio : American Ceramic Society, c1990  viii, 413 p. ; 24 cm
シリーズ名: Ceramic transactions ; v. 8
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15.

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15. Proceedings of the Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors
edited by S.J. Pearton, K.S. Jones, V.J. Kapoor ; [sponsored by the] Electronics and Dielectric Science and Technology divisions
出版情報: Pennington, NJ : Electrochemical Society, c1990  viii, 472 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 90-13
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16.

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16. Third International Conference on Dielectric Materials, Measurements, and Applications, 10-13 September 1979
organised by the Science, Education, and Management Division of the Institution of Electrical Engineers, in association with Institute of Electrical and Electronics Engineers ... [et al.] [at the] University of Aston in Birmingham, UK
出版情報: London ; New York : Institution of Electrical Engineers, c1979  xii, 418 p. ; 30 cm
シリーズ名: IEE conference publication ; no. 177
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17.

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17. Physics of dielectric solids, 1980 : invited papers
presented at the Conference on Physics of Dielectric Solids held at the University of Kent at Canterbury, 8-11 September 1980 ; edited by C.H.L. Goodman
出版情報: Bristol : Institute of Physics, c1980  151 p. ; 25 cm
シリーズ名: Institute of Physics conference series ; no. 58
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目次情報: 続きを見る
Molecular correlation function approaches to dielectric relaxation / R.H. Cole
A many-body universal approach to dielectric relaxation in solids / A.K. Jonscher
Dielectric, mechanical and NMR relaxation / D.W. McCall
Piezoelectricity and pyroelectricity in poly (vinylidene fluoride) / G.R. Davies
Low-temperature effects / W.A. Phillips
Nonlinear optical interactions / J. Jerphagnon
Electronic transport in amorphous dielectric films / J. Mort
Low-mobility transport in perfect crystals / R.W. Munn
Dispersion forces / A.D. Buckingham
Contact charging of dielectrics / A.C. Rose-Innes
Bulk effects in charge trapping / G.M. Sessler
Molecular correlation function approaches to dielectric relaxation / R.H. Cole
A many-body universal approach to dielectric relaxation in solids / A.K. Jonscher
Dielectric, mechanical and NMR relaxation / D.W. McCall
18.

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18. Dielectric properties of polymers : proceedings of a symposium held on March 29-30, 1971, in connection with the 161st national meeting of the American Chemical Society in Los Angeles, California, March 28-April 2, 1971
Edited by Frank E. Karasz
出版情報: New York : Plenum Press, 1972  x, 374 p. ; 26 cm
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19.

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19. Dielectric ceramics : processing, properties, and applications
edited by K.M. Nair, J.P. Guha, A. Okamoto
出版情報: Westerville, Ohio : American Ceramic Society, c1993  viii, 357 p. ; 24 cm
シリーズ名: Ceramic transactions ; v. 32
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20. Epitaxial oxide thin films and heterostructures : symposium held April 5-7, 1994, San Francisco, California, U.S.A.
editors, David K. Fork ... [et al.]
出版情報: Pittsburgh, Pa : Materials Research Society, c1994  xi, 408 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 341
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21.

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21. Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A.
editors, Jimmie J. Wortman ... [et al.]
出版情報: Pittsburgh, PA : Materials Research Society, c1994  xi, 450 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; v. 342
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22.

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22. Proceedings of the first International Conference on Conduction and Breakdown in Solid Dielectrics, Univesit Paul Sabatier, Toulouse, France, July 4-8, 1983
sponsored by the IEEE Electrical Insulation Society and the French IEEE Section
出版情報: New York, N.Y. : Institute of Electrical and Electronics Engineers , Piscataway, N.J. : Available from IEEE Service Center, Single Publication Sales Dept., c1983  483 p. ; 21 cm
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23.

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23. Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials, June 1-5, 2003, Meitetsu New Grand Hotel, Nagoya, Japan (v. 1 ; v. 2 ; v. 3)
sponsored by IEEE Dielectrics and Electrical Insulation Society ; cosponsored by IEE Japan
出版情報: Piscataway, NJ : IEEE Service Center, c2003  3 v. (xiv, 1244, viii p.) ; 30 cm
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24.

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24. Low and high dielectric constant materials : materials science, processing, and reliability issues : proceedings of the fifth international symposium
editors, Mark J. Lododa, R. Singh, Simon S. Ang, Hazara S. Rathore ; [sponsord by] Dielectric Science and Technology, Electronics, and High Temperature Materials Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 244 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; Pv. 2000-5
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25.

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25. Proceedings of the 6th International Conference on Properties and Applications of Dielectric Materials, Xi'an, China, June 21-26, 2000 (: set casebound - v. 2)
sponsored by IEEE Dielectrics and Electrical Insulation Society ; with technical co-sponsorship by China Electrical Society ; organized by Xi'an Jiaotong University CES Engineering Dielectric Institution
出版情報: [New York] : Institute of Electrical and Electronics Engineers, c2000  2 v. ; 28cm
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26.

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26. Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices (: pbk)
edited by Evgeni Gusev
出版情報: Dordrecht : Springer, c2006  x, 492 p. ; 25 cm
シリーズ名: NATO science series ; ser. 2 . Mathematics, physics and chemistry ; v. 220
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目次情報: 続きを見る
High-K Technology
PVD-High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-state Drive Current; M. Niwa et al
Extremely High Density Capacitors with ALD High-k Dielectric Layers / J. Klootwijk et al
Towards Understanding of Processing-nanostructure-property Inter-relationships in High-k/Metal Gate Stacks / P.Majhi et al
Defects in High-K Dielectrics: Characterization
On the Characterization of Electronically Active Defects in High-k Gate Dielectrics / D.A. Buchanan ; D. Felnhofer
Inelastic Electron Tunnelling Spectroscopy (IETS) Study of High-k Dielectrics / T.P. Ma et al
Characterization and Modeling of Defects in High-k Layers Through Fast Electrical Transient Measurements / J. Mitard et al
Characterization of Electrically Active Defects in High-k Gate Dielectrics Using Charge Pumping / E.M. Vogel ; D.W. Heh
Impact of High-k Properties on MOSFET Electrical Characteristics / L. Pantisano et al
High-K Processing and Defects
Structural Evolution and Point Defects in Metal Oxide-based High-k Gate Dielectrics / P. C. McIntyre et al
Disordered Structure and Density of Gap States in High-Permittivity Thin Solid Films / K. Kukli et al
Interdiffusion Studies of High-k Gate Dielectric Stack Constituents / P. Sivasubramiani et al
XPS/LEIS Studyof High-k Rare Earth (Lu, Yb)Oxides and Silicates on Si: The Effect of Annealing onMicrostructure Evolution / A.Zenkevich et al
Transient Charging Effects and Its Implications to The Reliability of High-k Dielectrics / B. H. Lee et al
High-K Heory
Defect Energy Levels in High-k Gate Oxides / J. Robertson et al
Defect-related Issues in High-k Dielectrics / S.T.Pantelides et al
Studying The Effects of Nitrogen and Hafnium Incorporation into The SiO2/Si(100) Interface with Replica-exchange Molecular Dynamics and Density-Functional-Theory Calculations / W. Androni et al
Electrically Active Defects
Probing Point Defects and Traps in Stacks of Ultrathin Hafnium Oxides on (100)Si by Electron Spin Resonance: Interfaces and N Incorporation / A. Stesmans ; V. V. Afanas'ev
Mechanism of Charge Trapping Reduction in Scaled High-k Gate Stacks / G. Bersuker et al
Electrically Active Interface and Bulk Semiconductor Defects in High-k / Germanium Structures / A. Dimoulas
Defect and Composition Analysis of As-deposited and Nitrided (100)Si/ SiO2/ Hf1-xSixO2 Stacks by Electron Paramagnetic Resonance and Ion Beam Analysis / H.J. von Bardeleben et al
Defects at The High-k /Semiconductor Interfaces Investigated By Spin Dependent Spectroscopies / M. Fanciulli et al
Fixed Oxide Charge in Ru-based Chemical Vapour Deposited High-k Gate Stacks / K. Frohlich et al
Electrical Defects in Atomic Layer Deposited HfO2 Films on Silicon: Influence of Precursor Chemistries and Substrate Treatment / S. Dueas et al
The Effects of Radiation and Charge Trapping on The Reliability of Alternative Gate Dielectrics / J. A. Felix et al
Can LEIS Spectra Contain Information on Surface Electronic Structure of High-k Dielectrics / Yu. Lebedinskii et al
Low Substrate Damage High-k Removal After Gate Patterning / D. Shamiryan et al
Monitoring of Fermi Level Variations at Metal/High-k Interfaces with in situ X-ray Photoelectron Spectroscopy
Interfaces
Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High-k Materials on Silicon / T. Gustafsson et al
Interface Formation During Epitaxial Growth of Binary Metal Oxides on Silicon / H. J. Osten et al
Chemical Environment and Strain on Oxygen Vacancy Formation Energies at Silicon-Silicon Oxide Interfaces / T.M. Henderson
Dielectric and Infrared Properties of Ultrathin SiO2 Layers on Si (100) / F. Giustino ; A. Pasquarello
The (1 0 0) Surface of Semiconductor Silicon (in Practical Conditions)
Preparation, Evolution, Passivation / G.F.Cerofolini
Processing, Characterization and Devices
Correlation Between Defects, Leakage Current
High-K Technology
PVD-High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-state Drive Current; M. Niwa et al
Extremely High Density Capacitors with ALD High-k Dielectric Layers / J. Klootwijk et al
27.

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27. Electroresponsive polymers and their applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.
editors, Vivek Bharti ... [et al.]
出版情報: Warrendale, Pa. : Materials Research Society, c2006  x, 259 p. ; 24 cm
シリーズ名: Materials Research Society symposium proceedings ; 889
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28.

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28. Proceedings of the 2nd International Conference on Conduction and Breakdown in Solid Dielectrics, Erlangen, Germany, July 7-10, 1986
sponsored by IEEE/Electrical Insulation Society ; cosponsored by IEEE/German Section
出版情報: New York, N.Y. : Institute of Electrical and Electronics Engineers , Piscataway, NJ, USA : Available from IEEE Service Center, Single Publication Sales Dept., c1986  527 p. ; 21 cm
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29.

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29. Dielectric and related phenonmena : materials physico-chemistry, spectrometric investigations, and applications : 16-20 September 1996, Szczyrk, Poland
Andrzej Włochowicz, chair/editor ; Elżbieta Targosz-Wrona, coeditor ; organized by Technical University of Łódź, Branch in Bielsko-Biała, Poland ; sponsored by State Committee for Scientific Research, Poland [and] SPIE--the International Society for Optical Engineering in association with the SPIE Poland Chapter
出版情報: Bellingham, Wash. : SPIE, c1997  xii, 162 p. ; 28 cm
シリーズ名: SPIE Poland Chapter proceedings ; 31
Proceedings / SPIE -- the International Society for Optical Engineering ; v. 3181
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30.

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30. Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues ([I] ; II)
editors, S. Kar ... [et al.] ; sponsoring divisions: Dielectric Science and Technology, Electronics
出版情報: Pennington, NJ : Electrochemical Society, c2003-c2004  2 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-28, 2003-22
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目次情報: 続きを見る
Symposium Chairs
Preface
Table of Contents
Facts about the Electrochemical Society
High-K Gate Dielectrics - General / Chapter 1：
Challenges for the Integration of High-K Gate Dielectrics / M. Quevedo-Lopez ; B. E. Gnade ; R. M. Wallace
Correlation between the Material Constants and a Figure of Merit for the High-K Gate Dielectrics / S. Kar ; R. Singh
Binary Oxide High-K Gate Dielectrics / Chapter 2：
High Dielectric Constant Gate Insulator Technology using Rare Earth Oxides / H. Iwai ; S. Ohmi ; S. Akama ; C. Ohshima ; I. Kashiwagi ; A. Kikuchi ; J. Taguchi ; H. Yamamoto ; I. Ueda ; A. Kuriyama ; J. Tonotani ; Y. Kim ; Y. Yoshihara ; H. Ishiwara
High Quality ZrO[subscript 2] Thin Films on [left angle bracket]100[right angle bracket] Si Substrates as a Gate Dielectric Material: Processing and Characterization / M. Fakhruddin ; K. F. Poole ; S. V. Kondapi
HfO[subscript 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium / J. Schaeffer ; N. V. Edwards ; R. Liu ; D. Roan ; B. Hradsky ; R. Gregory ; J. Kulik ; E. Duda ; L. Contreras ; J. Christiansen ; S. Zollner ; P. Tobin ; B.-Y. Nguyen ; R. Nieh ; M. Ramon ; R. Rao ; R. Hegde ; R. Rai ; J. Baker ; S. Voight
Electrical Characteristics Improvement of Dy[subscript 2]O[subscript 3] Thin Films by In-Situ Vacuum Anneal
Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Films / J.-Y. Tewg ; J. Lu ; Y. Kuo ; B. Schueler
Effect of Deposition Sequence and Plasma Treatment on ALCVD HfO[subscript 2] n-MOSFET Properties / C. Lim ; A. Hou ; J. Gutt ; S. Marcus ; C. Pomarede ; E. Shero ; H. de Waard ; C. Werkhoven ; L. Chen ; J. Tamim ; N. Chaudhary ; G. Bersuker ; J. Barnett ; C. Young ; P. Zeitzoff ; G. A. Brown ; M. Gardner ; R. W. Murto ; H. R. Huff
Characteristics of High-K Gd[subscript 2]O[subscript 3] Films Deposited on Different Orientation of Si Substrate
Hafnium-Doped Tantalum Oxide High-K Dielectrics / P. C. Liu
Silicate/Aluminate High-K Dielectrics and Reliability / Chapter 3：
Defect Generation in High-K Dielectric Stacks: Characterization and Modelling / M. Houssa ; J. L. Autran ; V. V. Afanas'ev ; A. Stesmans ; M. M. Heyns
Ultra-Thin Zirconium and Hafnium Silicate Films Deposited by MOCVD on Si(100) / D. Landheer ; X. Wu ; H.-W. Chen ; M.-S. Lee ; S. Moisa ; T.-Y. Huang ; T.-S. Chao ; Z.-H. Lu ; W. N. Lennard
Effect of Post-Annealing on the Electrical Properties of ZrO[subscript 2] and ZrAlO / M. Mansouri ; Y.-L. Chiou ; Y. Ono ; S. T. Hsu
Improved Scalability of High-K Gate Dielectrics by using Hf-Aluminates / T. H. Hou ; H. de Warrd
Reliability and Plasma-Induced Degradation of High-K Gate Dielectrics in MOS Devices / K.-S. Chang-Liao ; P.-J. Tzeng
Stability of High-K Thin Films for Wet Process
High-K Gate Dielectric Interfaces / Chapter 4：
Nitrogen Incorporation and High Temperature Forming Gas Anneal For High-K Gate Dielectrics / J. C. Lee ; R. Choi ; K. Onishi ; H. Cho ; C. Kang ; S. Krishnan
Integrity of Hafnium Silicate/Silicon Dioxide Ultrathin Films on Silicon / J. Morais ; L. Miotti ; G. V. Soares ; R. Pezzi ; K. P. Bastos ; M. C. M. Alves ; I. J. R. Baumvol ; A. L. P. Rotondaro ; J. J. Chambers ; M. R. Visokay ; L. Colombo
Suppression of Silicidation for Zirconia, Hafnia, and Silicate on Silicon by Helium Annealing / K. Muraoka
Analysis of Electrically Active Defects at Si(100)-HfO[subscript 2] Interface / B. J. O'Sullivan ; E. O'Connor ; P. K. Hurley ; M. Modreanu ; F. Roussel ; H. Roussel ; M. A. Audier ; J. P. Senateur ; Q. Fang ; I. W. Boyd ; C. Jimenez ; T. Leedham
Thermal Stability of the HfO[subscript 2]/SiO[subscript x]N[subscript y]-Si Interface / R. P. Pezzi ; H. Boudivov ; R. I. Hegde ; H. H. Tseng ; P. J. Tobin
Non-Contact Electrical Characterization of High-Dielectric-Constant (High-K) Materials / P. Y. Hung ; B. Foran ; A. Diebold ; X. Zhang ; C. Oroshiba
High-K Capacitor Dielectrics / Chapter 5：
Ruthenium Bottom Electrode Prepared by Electroplating for High-K DRAM Capacitor / J. J. Kim ; O. J. Kwon ; M. S. Kang
Regional Charge Transport Characteristics of Integrated Metal-Oxide MIM Capacitors / D. R. Roberts ; S. Kalpat ; T. P. Remmel ; M. A. Said ; M. V. Raymond ; R. Ramprasad ; E. D. Luckowski ; M. Miller
High Capacitance and Low Leakage Ta[subscript 2]O[subscript 5] MIM Capacitor for DRAM / W. Li ; G. S. Sandhu
High Dielectric Constant Metal Oxide Films via Photochemical Metal Organic Deposition (PMOD) Process / S. P. Mukherjee ; P. J. Roman, Jr. ; H. O. Madsen ; L. G. Svendsen ; M. A. Fury ; S. J. Barstow ; A. Jeykumar ; C. L. Henderson
Seed Layer Free Ruthenium Precursor for MOCVD / N. Oshima ; T. Shibutami ; K. Kawano ; S. Yokoyama ; H. Funakubo
Low-Leakage Tantalum Oxide MIM Capacitor Module for Cu-Interconnected RF BiCMOS Technology / C. C. Barron ; M. Sadd ; P. Zurcher
Author Index
Subject Index
Interface Issues
Tailoring High-K/Silicon Interface for Nanoelectronics Applications / R. Puthenkovilakam ; J. Chang
Reducing the Interfacial Formation of SiO[subscript x] in HfO[subscript 2] MOS Structures: A Study in Pre-Deposition Cleaning and Surface Oxidation, and Post-Deposition Annealing / H. Harris ; K. Choi ; N. Biswas ; I. Chary ; L. Xie ; N. Mehta ; G. Kipshidze ; M. White ; H. Temkin ; S. Gangopadhyay
Influence of the 5 A TaN[subscript x] Interface Layer on Dielectric Properties of the Zr-Doped TaO[subscript x] High-K Film
Plasma Modification of Hf Based High-K Dielectrics: Effect of Nitridation and Silicon Nitride Deposition / W. Tsai ; J. W. Maes ; H. De Witte ; J. Chen ; A. Delabie ; R. Carter ; O. Richard ; M. Caymax ; T. Conrad ; E. Young ; S. DeGendt
Method for Determining the Effectiveness of Silicon Nitride as a Barrier Layer for HfO[subscript 2] / H. Kraus ; J. Snow ; P. van Doorne ; W. Fyen ; P. W. Mertens ; F. Kovacs
Effect of Surface Preparation on High-K Gate Stack Device Performance / N. Moumen ; B. H. Lee ; J. Peterson
Deposition Methods and Processing - I
Some Recent Developments in the Metalorganic Chemical Vapor Deposition of High-K Dielectric Oxides / P. R. Chalker ; A. C. Jones
A Comparative Study of Erbium Oxide and Gadolinium Oxide High-K Dielectric Thin Films Grown by Low-Pressure Metalorganic Chemical Vapour Deposition (MOCVD) using [beta]-Diketonates as Precursors / M. P. Singh ; C. S. Thakur ; K. Shalini ; T. Shripathi ; N. Bhat ; S. A. Shivashankar
HfO[subscript x]N[subscript y] and HfSi[subscript x]O[subscript y]N[subscript z] High-K Layers Deposited by MOCVD in Mixed Gas Flows of N[subscript 2]O and O[subscript 2] / C. Zhao ; S. Van Elshocht ; T. Conard ; Z. Xu ; S. DeGendt|cM. Heyns
Electrical Characterization - I
Internal Photoemission over High-K Insulating Barriers / V. V. Afanas'ev
Leakage Current Behavior of HfO[subscript 2] Thin Films / M. N. Jones ; Y. W. Kwon ; D. P. Norton
Experimental Values of a Quantization Index of the Accumulation Layers of Different High-K Gate Dielectrics / T. Kachru ; M. Bhagat
Deposition Methods and Processing - II
Tensile Strain in Si due to Expansion of Lattice Spacings in CeO[subscript 2] Epitaxially Grown on Si (111) / Y. Nishikawa ; D. Matsushita ; N. Satou ; M. Yoshiki ; T. Schimizu ; T. Yamaguchi ; H. Satake ; N. Fukushima
Selective Wet Etching of Hf-based Layers / M. Claes ; V. Paraschiv ; H. Boutkabout ; T. Witters ; E. Rohr ; B. Coenegrachts ; J. Vertommen ; R. Lindsay ; W. Boullart ; M. Heyns
Alternating Pulse Deposition of High-K Metal Oxide Thin Films using Hf(NO[subscript 3])[subscript 4] as a Metal and an Oxygen Source with Multiple In-Situ Annealing / J.F. Conley, Jr. ; D. Tweet ; G. Stecker ; R. Solanki ; W.W. Zhuang
Improvement of Electrical Properties of Alumina Films by Nitrogen Added Plasma Enhanced Atomic Layer Deposition / J.W. Lim ; S.J. Yun ; J.H. Lee
The Role of TXRF in the Introduction of High-K Materials into IC Processing / D. Hellin ; B. Onsia ; C. Vinckier
Metal Gates
Characterization of Resistivity and Work Function of Sputtered-TaN Film for Gate Electrode Applications / C. S. Kang ; H.-J. Cho ; Y. H. Kim ; C. Y. Kang ; A. Shahriar ; C. H. Choi ; S. J. Rhee
NbO as a Gate Electrode for NMOSFETs / W. Gao ; J. F. Conley
A Novel Iridium Precursor for MOCVD / M. Takamori ; T. Yamakawa ; S. Watari ; H. Fujisawa ; M. Shimizu ; H. Niu
Advanced Ruthenium Precursors for Thin Film Deposition / C. A. Hoover ; M. M. Litwin ; J. Peck ; G. B. Piotrowski ; D. M. Thompson
Silicates and Effects of Post-Deposition Treatments / Chapter 6：
Effects of NH[subscript 3] Annealing on High-K HfSiON/HfO[subscript 2] Gate Stack Dielectrics
Nitridation of Hafnium Silicate Thin Films Deposited by Atomic Layer Deposition / Y. Senzaki ; H. Chatham ; R. Higuchi ; C. Bercaw ; J. DeDontney
Thermal Stability and Compatibility with Cmos Processing / Chapter 7：
Scaling of Hf-Based Gate Dielectrics--Integration with Polysilicon Gates / W. Deweerd ; V. Kaushik ; A. Kerber ; S. Kubicek ; M. Niwa ; L. Pantisano ; R. Puurunen ; L. Ragnarsson ; T. Schram ; Y. Shimamoto ; W. Vandervorst
Suppression of Silicidation in Poly-Si/High-K Insulator/SiO[subscript 2]/Si Structure by Helium Through Process
Effect of Post Metallization Annealing for La[subscript 2]O[subscript 3] Gate Thin Films on Electrical Characteristics / S.-I. Ohmi ; K. Tsutsui
Defect Characterization and Reliability / Chapter 8：
Photoelectron Spectroscopy Investigation of High K Dielectrics / K. Demirkan ; A. Mathew ; R. L. Opila
Soft Breakdown Phenomena in High-K Gate Dielectrics
Low Frequency Noise Study of n-MOSFETs with HfO[subscript 2] Gate Dielectric / E. Simoen ; A. Mercha ; C. Claeys
Simulations of Bias Temperature Instabilities in p-MOSFETs with Hf[subscript x]SiO[subscript y]-Based Gate Dielectrics / C. Bizzari
The Effects of Forming Gas Anneal Temperature and Dielectric Leakage Current on TDDB Properties of HfO[subscript 2] Devices / Y.-H. Kim
Charge Trapping and Electron Mobility Degradation in MOCVD Hafnium Silicate Gate Dielectric Stack Structures / C. D. Young ; T.H. Hou ; E. Cartier ; P. Lysaght ; J. Bennett ; C.-H. Lee ; S. Gopalan ; G. Groeseneken
Electrical Characterization - II / Chapter 9：
High Hole Mobility of Al[subscript 2]O[subscript 3] MOSFETs on Dislocation Free Ge-on-Insulator Wafers / A. Chin ; D.S. Yu ; C.H. Wu ; C.H. Huang ; W.J. Chen
Extraction of the High-K Gate Dielectric Parameters from the Capacitance Data
Characteristics of Thermally Evaporated HfO[subscript 2] / R. Garg ; N. A. Chowdhury ; R. K. Jarwal ; D. Misra ; P. K. Swain ; M. Bhaskaran
Characterization of High-K Dielectric Stacks for Flash Memory Applications / Y.L. Chiou
Electrical Characteristics of High-K Stack Gate Dielectric Thin Films with La[subscript 2]O[subscript 3] as a Buffer Layer
Low-frequency Noise Characteristics of MISFETs with La[subscript 2]O[subscript 3] Gate Dielectrics / H. Sauddin
Investigation of High-K Dielectric Properties with the Non-Contact SASS Technique / M. Wilson ; J. Lagowski ; J. D'Amico ; P. Edelman ; A. Savtchouk
Electrical Characteristics of High-K La[subscript 2]O[subscript 3] Thin Film Deposited by E-Beam Evaporation Method
Ferroelectric Layers and Memory Devices / Chapter 10：
Reduction in Programming Voltage of Non-Volatile Flash Memory Using High-K Dielectric Stacks / Y. L. Chiou
Reaction Mechanism of a Titanium Source, Ti(MPD)(METHD)[subscript 2], in Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO[subscript 3] Films / T. Nishimura ; T. Nakamura ; K. Tachibana
Characteristics of (Pb, Sr)TiO[subscript 3] Films Post Treated by Low Temperature Technologies / J.-L. Wang ; C.-K. Jan ; D.-C. Shye ; M.-W. Kuo ; H.-C. Cheng
Symposium Chairs
Preface
Table of Contents
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