| Fundamental Chemistry and Mechanisms |
| Atomistic Modeling of Chemical Vapor Deposition: NO on the Si (001) (2x1) Reconstructed Surface / N. Tanpipat ; J. Andzelm ; B. Delley ; A. Korkin ; A. Demkov |
| Simulation of Surface Diffusion of Silicon and Hydrogen on Single Crystal Silicon Surfaces / S. Somasi ; B. Khomami ; R. Lovett |
| Activation Energy Study for the Nucleation and Growth Stages of Cu(TMVS)(HFAC) Sourced Copper CVD / D. Yang ; J. Hong ; D. Richards ; T. Cale |
| Development of Gas Phase and Surface Kinetic Schemes for the MOCVD of CdTe, ZnS and ZnSe / C. Cavallotti ; V. Bertani ; M. Masi ; S. Carra |
| Determination of Energy Transfer Effects for Molecular Decomposition / W. Tsang ; V. Mokrushin |
| Gas-Phase Chemistry in the CVD of Silicon Carbide: Theoretical Study of the Reactions SiH[subscript 2]+CH[subscript 4], SiH[subscript 2]+C[subscript 2]H[subscript 4], and SiH[subscript 2]+C[subscript 2]H[subscript 2] / C. Raffy ; M.D. Allendorf ; E. Blanquet ; C.F. Melius |
| SiH[subscript 4] Reaction Mechanism Research Using a Fast Wafer-Rotating Reactor / Y. Sato ; N. T. Tamaoki ; T. Ohmine |
| Modeling Particle Nucleation during Thermal CVD of Silicon from Silane using Kinetic Monte Carlo Simulation / X. Li ; M. Swihart |
| Measurement of the Kinetics of the High Temperature Oxidation of TiCl[subscript 4] / R. Raghavan ; D. Lee ; D. Conrad ; P. Morrison, Jr. |
| Influence of Carbon Precursor on the Gas-Phase Chemistry of the Ti-C-Cl-H System / S. de Persis ; F. Teyssandier ; A. McDaniel |
| Molecular Beam Mass Spectrometry Studies of the Thermal Decomposition of Tetrakis(Dimethylamino)Titanium / C.C. Amato-Wierda ; E.T. Norton, Jr. |
| Kinetic and Mechanistic Studies of the Chemical Vapor Deposition of Ti-Si-N Thin Films with Ti(NMe[subscript 2])[subscript 4](TDMAT), NH[subscript 3], and Si H[subscript 4] / E.T. Norton ; C. Amato-Wierda |
| Evaluation of Gas Phase Reaction Rate Constant by Deposition Profile Analysis for In Situ Counter Diffusion CVD / Y. Egashira ; H. Tanaka ; T. Mina ; N. Mori ; K. Ueyama |
| Integration of a Quadrupole Mass Spectrometer and a Quartz Crystal Microbalance for In Situ Characterization of Atomic Layer Deposition Processes in Flow Type Reactors / A. Rahtu ; M. Ritala |
| Nanostructures and Quantum Dots |
| Nanostructures by CVD Assisted Methods Using Inorganic Precursors / P. Doppelt ; R. Even ; F. Marchi ; V. Bouchiat ; H. Dallaporta ; S. Safarov ; D. Tonneau ; P. Hoffmann ; F. Cicoira ; I. Utke ; B. Dwir ; K. Leifer ; E. Kapon |
| Effect of Carbon Predeposition Nucleation of Quantum Dots / Q. Zhao ; D. Greve |
| Plasma-Enhanced MOCVD of Smooth Nanometersized Metal/Silicon Single- and Multilayerfilms / F. Hamelmann ; G. Haindl ; A. Aschentrup ; A. Klipp ; U. Kleineberg ; P. Jutzi ; U. Heinzmann |
| Modeling, Reactor Design, and Process Control |
| Multicomponent Transport and Mixed Convection Flows in CVD Reactors / A. Ern |
| A Benchmark Solution for Multi-Dimensional Thermal CVD Modeling with Detailed Chemistry / C.R. Kleijn |
| On the Occurrence of Non-Symmetric Flows in Axisymmetric CVD Reactors / H. van Santen ; H.E.A. van den Akker |
| The Dynamics of Thin Film Growth: A Modeling Study / M. Gallivan ; R. Murray ; D. Goodwin |
| Improvement of Temperature Uniformity in Rapid Thermal CVD Systems Using Multivariable Control / F. van Bilsen ; R. De Keyser |
| Systematic Approach to Controlling Abnormal Structures Growth in CVD - Simulation of Nodule Structure Evolution |
| A Two-Dimensional Simulation Model for Oxy-Acetylene Flame CVD of Diamond Films / M. Okkerse ; C. Kleijn ; H. van den Akker ; M.H.J.M. de Croon ; G.B. Marin |
| Silicon Films Morphology Design Through Multiscale CVD Modeling |
| Numerical Simulation of Silicon Carbide Deposition in a Cold Wall CVD Reactor / G. Chaix ; A. Dolle t ; M. Matecki ; Y. Wang |
| Effect of Gas Phase Nucleation on Silicon Carbide Chemical Vapor Deposition / A.N. Vorob'ev ; A.E. Komissarov ; M.V. Bogdanov ; S. Yu. Karpov ; A.A. Lovtsus ; Yu.N. Makarov ; S.A. Lowry |
| CVD of SiC from CH[subscript 3]SiCl[subscript 3] in a Hot-Wall-Reactor System: Transport Pheonomena and Kinetic Aspects / V.K. Wunder ; N. Popovska ; H. Gerhard ; G. Emig ; P. Kaufmann ; L. Kadinski ; F. Durst |
| Modeling and System Design for Atmospheric Pressure CVD of YSZ / T. Besmann ; V. Varanasi ; T. Starr ; T. Anderson |
| A Stagnation-Flow MOCVD Reactor for Intelligent Deposition of YBCO Thin Films / A. Tripathi ; D. Boyd ; H. Atwater ; L. R. Raja ; R. J. Kee ; J. Musolf |
| Metalorganic Chemical Vapor Deposition |
| New Liquid Precursors for CVD of Metal-Containing Materials / R. Gordon |
| Novel MOCVD Process for the Low Temperature Deposition of the Chromium Nitride Phases / F. Maury ; D. Duminica ; F. Senocq |
| MOCVD of WN[subscript x] Thin Films Using Novel Imido Precursors / S. Johnston ; C. Ortiz ; O. Bchir ; Y. Zhang |
| Vapor Phase Epitaxy of Magnesium Oxide on Silicon Using Methylmagnesium Alkoxides / S.S. Lee ; S.Y. Lee ; C. Kim ; Y. Kim |
| Use of Ti(dpm)[subscript 2](Opr[superscript i])[subscript 2] Precursor to Obtain TiO[subscript 2] Film / V. Krisyuk ; A.E. Turgambaeva ; I.K. Igumenov ; V.G. Bessergenev ; I.V. Khmelinskii ; R.J.F. Pereira |
| Monitoring of MOCVD Fabrication of LaF[subscript 3] Films Using the Novel La(hfac)[subscript 3] - Diglyme Adducts and In Situ Synthesized La(hfac)[subscript 3] Anhydrous Precursor / G.G. Condorelli ; I.L. Fragala |
| Ceramics, Composites, and Hard Materials |
| Chemical Vapor Deposition of Aluminum on Silicon Carbide for the Investigation of the Interfacial Microstructure in Discontinuously Reinforced Aluminum / P. Oritz ; D. Oquab ; C. Vahlas ; I. Hall |
| Development of CVD Mullite Coatings / S.N. Basu ; V.K. Sarin |
| Evaluation of Various Hypotheses on the Influence of Nitrogen on Diamond Growth in an Oxy-Acetylene Torch Reactor |
| MOCVD of Aluminosilicate Corrosion Protection Coatings / S.M. Zemskova ; J.A. Haynes ; T.M. Besmann |
| Chemical Vapor Deposition of MoS[subscript 2] on and in TiN Coatings / H. Keune ; G. Wahl ; W. Lacom |
| Measurement of the Retarding Effect of HCl on the Rate of CVD of Titaniumdiboride / Ch.-Ho Yu ; E. Zimmermann ; D. Neuschutz |
| Factors Affecting the Amount of Carbon in Titanium Carbide Films Made by CVD / C. C. Amato-Wierda ; K. E. Versprille ; P. Ramsey |
| Characterization of Ti-W-C Thin Films Deposited by CVD / C.C Amato-Wierda ; H. X. Ji |
| MOCVD of Chromium Carbide from Bis-Ethyl-Benzene-Chromium / M. Satschko |
| Effect of H[subscript 2]S on the Microstructure and Deposition Characteristics of Chemically Vapor Deposited Al[subscript 2]O[subscript 3] / S. Ruppi ; A. Larsson |
| Cosmo-Mimetic Carbon Micro-Coils / D. Motojima ; X. Chen ; W. In-Hwang ; T. Kuzuya ; M. Kohda ; Y. Hishikawa |
| Morphology of Carbon Micro-coils Grown by Catalytic Decomposition of Hydrocarbons / W.-In Hwang ; S. Motojima |
| Silicon and Silicon Germanium Materials |
| Chemical Vapor Deposition of Low Trap Density SiGe Quantum Well Layers on Silicon / S. Kar ; P. Zaumseil |
| Loading Effects during Non-Selective Epitaxial Growth of Si and SiGe / J. Pejnefors ; S.-L. Zhang ; J.V. Grahn ; M. Ostling |
| Thermodynamic Analysis of Selective Epitaxial Growth of Silicon / W.-S. Cheong ; J.H. Joung ; J.W. Park ; D.J. Ahn |
| Nanocrystals Formation and Microstructure Evolution of Amorphous Si and Si[subscript 0].7Ge[subscript 0.3] by Using Low Pressure Chemical Vapor Deposition / T.-S. Yoon ; D.-H. Lee ; J.-Y Koon ; K.B. Kim |
| The Profile Control of n-type Doping in Low and High Temperature Si Epitaxy for High Frequency Bipolar Transistors / H.H. Radamson ; B. Mohadjeri ; B.G. Malm ; G. Landgren |
| CVD-Epitaxial Growth on Porous Si for ELTRAN SOI-Epi Wafers / N. Sato ; S. Ishii ; T. Yonehara |
| Dislocation Generation in Selective and Non Selective SiGe Epitaxy / C. Fellous ; F. Romagna ; D. Dutartre |
| MOSFET Evaluation of Ultraclean-CVD Si and SiGe Grown at 550[degree]C on SIMOX / K. Fujinaga |
| Global Model of Silicon Chemical Vapor Deposition in Centura Reactors / A.S. Segal ; A.V. Kondratyev ; A.O. Galyukov ; S.Yu. Karpov ; W. Siebert ; P. Storck ; S. Lowry |
| A Comparison of Commonalities and Differences of Silicon-Based Thin Films CVD Processes for ULSI Device Technologies / V. Vassiliev |
| Metals, Metallization, and Diffusion Barriers |
| Selective Nucleation and Area Selective OMCVD of Gold on Patterned Self-Assembled Organic Monolayers: A Comparison of OMCVD and PVD / R.A. Fischer ; C. Winter ; U. Weckenmann ; J. Klashammer ; V. Scheumann ; S. Mittler |
| Surface Analysis of Al Film Prepared from Dimethyl-Aluminum-Hydride / M. Sugiyama ; H. Ogawa ; H. Itoh ; J. Aoyama ; Y. Horiike ; H. Komiyama ; Y. Shimogaki |
| Chemical Vapor Deposition of Titanium Nitride and Titanium Silicon Nitride Thin Films from Tetrakis-(dimethylamido) Titanium and Hydrazine as a Co-Reactant / D.A. Wierda |
| Chemical Vapor Deposition of Copper Using hfacCu[superscript (1)]DMB(3,3-dimethyl-1-butene) Liquid Precursor / K.- K. Choi ; S.-W. Rhee |
| Reaction of Bis-(2,4-Pentanedionato) M(II) (M= Ni, Cu) Under Low Pressure CVD Conditions / C.R. Vestal ; H.M. Sturgill ; T.C. DeVore |
| Metalorganic Chemical Vapor Deposition of Nickel Films: Investigation of a New Precursor, [Ni(tmen)([mu]-tfa) subscript 2]([mu]H[subscript 2]O) / J.-K. Kuang ; A. Gleizes |
| Platinum Thin Films Obtained via MOCVD on Quartz and CaF[subscript 2] Windows as Electrode Surfaces for In Situ Spectroelectrochemistry / S. Santi ; G. Carta ; S. Garon ; L. Rizzo ; G. Rossetto ; P. Zanella ; D. Barreca ; E. Tondello |
| Surface Adsorption of WF[subscript 6] on Si and SiO[subscript 2] in Selective W-CVD / Y. Yamamoto ; T. Matsuura ; J. Murota |
| CVD Tungsten Via Void Minimization for Sub 0.25 [mu]m Technology / A.M. Haider ; D.J. Rose ; J.R.D. Debord ; S.P. Zuhoski |
| Three-Dimensional Computer Simulation of WSi[subscript x] CVD VLSI Processing-Effect of Outlet Position / K. Sugawara ; M. Kunishige ; T. Muranushi ; Y.K. Chae |
| Processing of Tungsten Single Crystals by Chemical Vapor Deposition / R. Zee ; Z. Xiao ; H.S. Gale ; B.A. Chin ; L.L. Begg |
| Simplified CMP Planarization Process Module for Shallow Trench Isolation Applications / K. Kapkin ; M. Mogaard ; T. Curtis ; J. deRuiter |
| Dielectric Materials |
| Reactor Scale Simulation of Metal Oxide Deposition from an Inorganic Precursor / J.V. Cole ; A. Nangia ; T. Mihopoulas ; R. Hegde |
| Atomic Layer Deposition of High-k Oxides / K. Kukli ; M. Vehkamaki ; T. Hanninen ; T. Hatanpaa ; P.I. Raisanen ; M. Leskela |
| Quality Improvement of SiO[subscript 2]-Films by Adding Foreign Gases in Photo-Chemical Vapor Deposition / Y. Motoyama ; J.-i. Miyano ; T. Yokoyama ; K. Toshikawa ; T. Mori ; H. Mutou ; K. Kurosawa ; A. Yokotani ; W. Sasaki |
| SiO[subscript 2] Deposition Mechanism in Photo-Chemical Vapor Deposition Using Vacuum Ultraviolet Excimer Lamp / J. Miyano |
| Kinetic Growth of Al[subscript 2]O[subscript 3] Thin Films Using Aluminium Dimethylisopropoxide as Precursor / G. A. Battison ; R. Gerbasi |
| Atomic Layer Deposition of Metal Oxide Films by using Metal Alkoxides as an Oxygen Source |
| Optimization of LPCVD Nitride Deposition Conditions for Non-Volatile Memory Inter Poly Dielectric Applications / M.J. Teepen ; M.A.A.M. van Wijck ; H. Sprey |
| Ultra Thin TiO[subscript 2] Films Deposited by Atomic Layer Chemical Vapor Deposition / M. Schuisky ; A. Aidla ; J. Aarik ; M. Ludvigsson ; A. Harsta |
| Characterization of Ta[subscript 2]O[subscript 5] Films Prepared by ALCVD / K. Forsgren ; J. Sundqvist |
| In-Situ Preparation of Ti-Containing Ta[subscript 2]O[subscript 5] Films by Halide CVD |
| CVD of Zr-Sn-Ti-O for Capacitor Applications / Y. Senzaki ; G. Alers ; A. Hochberg ; D. Roberts ; J. Norman ; R. Fleming ; H. Krautter |
| Gallium Nitride and Other III-V Materials |
| Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation / C. Thompson ; G.B. Stephenson ; J.A. Eastman ; A. Munkholm ; O. Auciello ; M.V. Ramana Murty ; P. Fini ; S.P. DenBaars ; J.S. Speck |
| Reaction-Transport Models of the Metalorganic Vapor Phase Epitaxy of Gallium Nitride / R.P. Pawlowski ; C. Theodoropoulos ; A.G. Salinger ; H.K. Moffat ; T.J. Mountziaris ; J.N. Shadid ; E.J. Thrush |
| Growth of Hexagonal GaN Films by MOCVD Using Novel Single Precursors / C.G. Kim ; S.H. Yoo ; J.H. Lee ; Y.K. Lee ; M.M. Sung |
| In Situ Measurement of the Decomposition on GaN OMVPE Precursors by Raman Spectroscopy / C. Park ; S. Lee ; J. Seo ; M. Huang ; T.J. Anderson |
| Growth Kinetics and Mechanistic Studies of GaN Thin Films Grown by OMVPE Using (N[subscript 3])[subscript 2]Ga[(CH[subscript 2])[subscript 3]NMe subscript 2] as Single Source Precursor / A. Wohlfart ; A. Devi ; W. Rogge ; J. Schafer ; J. Wolfrum |
| Experimental and Numerical Study of InGaAsP Materials Growth Kinetics and Composition / O. Feron ; Y. Nakano |
| Ruthenium Doped Indium Phosphide Growth by Low Pressure Hydride Vapor Phase Epitaxy / D. Soderstrom ; S. Lourdudoss ; M. Wallnas ; A. Dadgar ; O. Stenzel ; D. Bimberg ; H. Schumann |
| Quasi-Thermodynamic Models of Surface Chemistry: Application to MOVPE of III-V Ternary Compounds / E.V. Yakovlev ; R.A. Talalaev ; Yu.A. Shopolyanskiy ; Y.N. Makarov |
| Electronic, Optical, and Magnetic Materials |
| Chemical Vapor Deposition and Magnetoresistance of Granular Cu-Co Films / I.S. Chuprakov ; K.-H. Dahmen |
| Diagnostics of Metalorganic Chemical Vapor Deposition of (Ba, Sr)TiO[subscript 3] Films by Microdischarge Optical Emission Spectroscopy / S. Momose ; T. Nakamura ; K. Tachibana |
| Bismuth Titanate Thin Films Deposited by Halide Chemical Vapor Deposition / S. Khartsev ; A. Grishin |
| LPCVD of Optical Interference Coatings for Micro-Optical Applications / M. George ; D.Z. Rogers |
| Evaluation of Precursors for the Chemical Vapour Deposition of Tin Oxide / A.M.B. van Mol ; G.R. Alcott ; C.I.M.A. Spee ; J.C. Schouten |
| Characteristics of Silicon Oxy-Nitride Thin Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition / C. Simionescu ; F. Bounasri ; S.G. Wallace ; H.K. Haugen ; J.A. Davies ; P. Mascher |
| CVD of Molecule-based Conductors and Magnets / L. Valade ; D. deCaro ; H. Casellas ; M. Basso-Bert ; C. Faulmann ; J.-P. Legros ; P. Cassoux ; L. Aries |
| Stability of RuO[subscript 2] Bottom Electrode and Its Effect on the Ba-Sr-Ti Oxide Film Quality / Y.-J. Oh ; S.H. Moon ; C.-H. Chung |
| Multilayers for the Growth of HTc Superconducting Tape: A Full MOCVD Approach / R. Lo Nigro ; G. Malandrino |
| Fundamental Chemistry and Mechanisms |
| Atomistic Modeling of Chemical Vapor Deposition: NO on the Si (001) (2x1) Reconstructed Surface / N. Tanpipat ; J. Andzelm ; B. Delley ; A. Korkin ; A. Demkov |
| Simulation of Surface Diffusion of Silicon and Hydrogen on Single Crystal Silicon Surfaces / S. Somasi ; B. Khomami ; R. Lovett |
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