| Preface |
| Materials Research Society Symposium Proceedings |
| Antimondie Related Materials and Devices |
| Progress in Antimonide-Based Mid-IR Lasers / G.W. Turner ; M.J. Manfra ; H.K. Choi ; A.K. Goyal ; S.C. Buchter ; S.D. Calawa ; A. Sanchez ; D.L. Spears |
| Pseudopotential Methods for Superlattices: Applications to Mid-Infrared Semiconductor Lasers / G.C. Dente ; M.L. Tilton |
| InN[subscript x]Sb[subscript 1-x] Light Emitting Diodes Grown by MBE / A.D. Johnson ; R.H. Bennett ; J. Newey ; G.J. Pryce ; G.M. Williams ; T.M. Burke ; J.C. Jones ; A.M. Keir |
| Electronic Structure Engineering of the Linewidth Enhancement Factor in Mid-Infrared Semiconductor Laser Active Regions / Michael E. Flatte ; J.T. Olesberg ; T.F. Boggess |
| Recent Progress of Mid-IR Type-II Interband Cascade Lasers / Chih-Hsiang Lin ; W-Y. Hwang ; S.V. Zaitsev ; J. Um ; C.H. Kuo ; A. Delaney ; Jun Zheng ; S.J. Murry ; A. Liu ; H.Q. Le ; Y. Mu ; S.S. Pei |
| 2.3-2.7[mu]m InGaAsSb/AlGaAsSb Broad-Contact and Single-Mode Ridge-Waveguide SCH-QW Diode Lasers Operating in CW Regime at Room Temperature / D. Garbuzov ; H. Lee |
| Room Temperature CW Operation of GaInAsSb/AlGaAsSb Quantum Well Lasers Emitting in the 2.2 to 2.3[mu]m Wavelength Range / C. Mermelstein ; S. Simanowski ; M. Mayer ; R. Kiefer ; J. Schmitz ; M. Walther ; J. Wagner |
| Growth of InSb on GaAs Substrates Using InAlSb Buffers for Magnetic Field Sensor Applications / R.M. Biefeld ; J.D. Phillips |
| Compound Semiconductor Applications for Automotive Sensors / M.W. Pelczynski ; J.J. Heremans ; S. Schwed |
| Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12[mu]m Range / L. Burkle ; F. Fuchs ; W. Pletschen ; R.E. Sah |
| Correlation Between GaInAsSb Surface Step Structure and Phase Separation / C.A. Wang |
| Advanced GaSb/InGaAsSb/AlGaAsSb 2-2.4[mu]m Photovoltaic Detectors / T.T. Piotrowski ; A. Piotrowska ; E. Kaminska ; K. Golaszewska ; E. Papis ; M. Piskorski ; W. Jung ; J. Katcki ; A. Kudla ; J. Adamczewska ; J. Piotrowski ; Z. Nowak ; Z. Orman ; J. Pawluczyk |
| High-Temperature W Diode Lasers Emitting at 3.3[mu]m / L.J. Olafsen ; W.W. Bewley ; I. Vurgaftman ; C.L. Felix ; E.H. Aifer ; D.W. Stokes ; J.R. Meyer ; R.J. Menna ; R.U. Martinelli ; D.Z. Garbuzov ; M. Maiorov ; J.C. Connolly ; A.R. Sugg ; G.H. Olsen |
| High-Power Mid-IR Interband Cascade Lasers Based on Type-II Heterostructures / Rui Q. Yang ; J.D. Bruno ; J.L. Bradshaw ; J.T. Pham ; D.E. Wortman |
| Type-II InAs/InGaSb Superlattices on Compliant GaAs Substrates / G.J. Brown ; K. Mahalingam ; A. Saxler ; R. Linville ; F. Szmulowicz ; M.L. Seaford ; D.H. Tomich ; W.Y. Hwang |
| Innovative Devices |
| DC to 65 GHz Wide Bandwidth InGaAs Photodiodes and Photoreceivers / Abhay M. Joshi |
| Progress in Monolithic Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation / Emil S. Koteles |
| AlGaAs/GaAs Distributed Feedback Quantum Cascade Lasers / W. Schrenk ; N. Finger ; S. Gianordoli ; G. Strasser ; E. Gornik |
| Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells / Seung-Woong Lee ; Kazuhiko Hirakawa ; Yozo Shimada |
| Time-Resolved Photoluminescence Studies of In[subscript x]Ga[subscript 1-x]As[subscript 1-y]N[subscript y] / M. Smith ; R.A. Mair ; J.Y. Lin ; H.X. Jiang ; E.D. Jones ; A.A. Allerman ; S.R. Kurtz |
| External Cavity Mid-Infrared Semiconductor Lasers / C-H. Lin ; J. Zheng ; S-S. Pei |
| The Longest Wavelength OPO Pumped by a 1[mu]m Laser / K.L. Vodopyanov ; J. Maffetone ; I. Zwieback ; W. Ruderman |
| Performance and Spectral Response of Far-Infrared Pb[subscript 1-x]Sn[subscript x]Te(In) Photodetectors / I. Ivanchik ; D. Khokhlov ; J. Pipher ; N. Raines ; D. Watson |
| Tuned Infrared Emission From Lithographically-Defined Silicon Surface Structures / James T. Daly ; Edward A. Johnson ; William A. Stevenson ; Anton C. Greenwald ; John A. Wollam ; Thomas George ; Eric W. Jones |
| IV-VI Compound Semiconductor Mid-Infrared Vertical Cavity Surface Emitting Lasers Grown by MBE / Z. Shi ; G. Xu ; P.J. McCann ; X.M. Fang ; N. Dai |
| Infrared Photodetectors |
| Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment / A. Shen ; H.C. Liu ; Z.R. Wasilewski ; M. Buchanan |
| Low Frequency Noise and Random Telegraph Signal in a Multiple Quantum Well Infrared Photodetector / L. Kore ; G. Bosman |
| Auger Suppression in and Noise Performance of "Hot" HgCdTe IR Detectors / F. Benjaminsen ; A.D. van Rheenen ; X-Y. Chen |
| Novel Diffraction Pattern for Optical Coupling in QWIP / Prafulla Masalkar ; Hironori Nishino ; Yusuke Matsukura ; Hitoshi Tanaka ; Kousaku Yamamoto ; Yoshihiro Miyamoto ; Toshio Fujii |
| Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/Al[subscript 0.3]Ga[subscript 0.7]As Multiple Quantum Wells / H.S. Gingrich ; C. Morath ; M.O. Manasreh ; P. Ballet ; J.B. Smathers ; G.J. Salamo ; C. Jagadish |
| Mechanisms of Intersubband Transition in n-Type III-V Quantum Well Superlattice and Improvement on Absorption for TE Polarized Field / C.W. Cheah ; G. Karunasiri ; L.S. Tan |
| High-Resolution X-ray Diffraction Analysis of p-Type Strained InGaAs/AlGaAs Multiple Quantum Well Structures / W. Shi ; D.H. Zhang ; T. Osotchan ; P.H. Zhang ; S.F. Yoon ; S. Swaminathan |
| Effect of Layer Relaxation on the Internal Photoemission in Pt/Si[subscript 1-x]Ge[subscript x] Schottky Barrier Type Infrared Detectors / B. Aslan ; R. Turan ; O. Nur ; M. Karlsteen ; M. Willander |
| Defects in CdTe-Based Photodetectors / V. Valdna |
| Infrared Photosensitivity Due to the Yb-Induced Defect States in Pb[subscript 1-x]Ge[subscript x]Te Alloys / E.P. Skipetrov ; N.A. Chernova ; E.A. Zvereva ; E.I. Slyn'ko |
| Innovative Materials, Characterization and Devices |
| Strained SiGe Materials for High Quantum Efficiency Photodiodes at [lambda] = 1.3 to 1.5[mu]m / L.M. Giovane ; H-C. Luan ; E.A. Fitzgerald ; L.C. Kimerling |
| Photoconductive Properties of GaAs[subscript 1-x]N[subscript x] Double Heterostructures as a Function of Excitation Wavelength / R.K. Ahrenkiel ; A. Mascarenhas ; S.W. Johnston ; Y. Zhang ; D.J. Friedman ; S.M. Vernon |
| Electronic Structures of Shallow Acceptors Confined in Si/SiGe Quantum Well Structures / Q.X. Zhao |
| Germanium Photodetectors for Silicon Microphotonics by Direct Epitaxy on Silicon / Hsin-Chiao Luan ; Desmond R. Lim ; Lorenzo Colace ; Gianlorezo Masini ; Gaetano Assanto ; Kazumi Wada ; Lionel C. Kimerling |
| Investigation of New Geometries for High Duty Cycle Far-Infrared p-Type Germanium Lasers / Danielle R. Chamberlin ; Erik Bruendermann ; Eugene E. Haller |
| Electronic Bandgap and Refractive Index Dispersion of Single Crystalline Epitaxial ZnGeN[subscript 2] / L.D. Zhu ; P.E. Norris ; L.O. Bouthillette |
| Bandgap Variation and Miscibility Gaps of Thallium-Based Pseudo-Binary Alloys / A-B. Chen ; J. Piao |
| The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition |
| Emissivity Compensated Pyrometry of the Substrate Surface During MOVPE Growth of In[subscript x]Ga[subscript 1-x]As[subscript 1-y]P[subscript y]/InP Materials in Rotating Disc Reactors / J. Ramer ; B. Patel ; A. Patel ; V. Boguslavskiy ; A. Gurary |
| Infrared-Photovoltaic Responses of Ion-Beam Synthesized [beta]-FeSi[subscript 2]/n-Si Heterojunctions / Yoshihito Maeda ; Kenji Umezawa ; Kiyoshi Miyake ; Kenya Ohashi |
| Si[subscript 1-x]Ge[subscript x] Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus / S. Kato ; T. Horikoshi ; T. Ohkubo ; T. Iida ; Y. Takano |
| Positive and Negative Photoconductivity in Lead Telluride Doped With Gallium Epitaxial Films / B.A. Akimov ; V.A. Bogoyavlenskiy ; L.I. Ryabova ; V.N. Vasil'kov |
| Impurity-Induced Defect States in Pb[subscript 1-x]Ge[subscript x]Te Alloys Doped With Gallium / V.V. Belousov ; L.A. Skipetrova |
| PbEuTe/PbTe Multi-Quantum Wells: Structural and Optical Properties / E. Abramof ; P.H.O. Rappl ; A.Y. Ueta ; P. Motisuke ; S.O. Ferreira |
| Metal-Organic Chemical Vapor Deposition of Zn-In-Sn-O and Ga-In-Sn-O Transparent Conducting Oxide Thin Films / A. Wang ; N.L. Edleman ; J.R. Babcock ; T.J. Marks ; M.A. Lane ; P.W. Brazis ; C.R. Kannewurf |
| The Development of Infrared Photosensitive Material Based on Polycrystalline PbS Films / C. Abarbanel ; R. Shneck ; Z. Dashevsky ; S. Rotman |
| Nonlinear Optical Materials |
| Development of Large High-Quality Chalcopyrite Single Crystals for Nonlinear Optical Applications |
| Native Defect Characterization in ZnGeP[subscript 2] / A. Hoffmann ; H. Born ; A. Naser ; W. Gehlhoff ; D. Perlov ; N. Dietz ; K.J. Bachmann |
| Photoinduced Changes in the Charge States of Native Donors and Acceptors in ZnGeP[subscript 2] / K.T. Stevens ; S.D. Setzler ; P.G. Schunemann ; T.M. Pollak ; N.C. Giles ; L.E. Halliburton |
| Electronic Structure and Derived Linear and Nonlinear Optical Properties of Chalcopyrites / Walter R.L. Lambrecht ; Sergey N. Rashkeev ; Sukit Limpijumnong ; Benjamin Segall |
| Anisotropy of Optical and Electron Transport Properties of Atomic Ordering in CdGeAs[subscript 2] / B.H. Bairamov ; N. Fernelius ; G. Irmer ; J. Monecke ; I.K. Polushina ; R. Pandey ; V. Yu. Rud' ; Yu. V. Rud' ; M.C. Ohmer |
| Thermal Admittance Studies of Electron-Irradiated CdGeAs[subscript 2] / S.R. Smith ; A.O. Evwaraye ; P.J. Drevinsky ; D.F. Bliss |
| Effect of Fast Electron Irradiation on Electrical and Optical Properties of CdGeAs[subscript 2] and ZnGeP[subscript 2] / J. Harper ; K. Bachmann |
| Photoresponse of Tellurium Rich Te[subscript x]Se[subscript (1-x)] Nonlinear Optical Semiconductors / Cindi L. Dennis ; Arnold Burger |
| Second-Harmonic Generation in Oriented CdSe-Nanocrystal-Doped Indium Tin Oxide Film and its Application to an Infrared Detector / A. Narazaki ; T. Hirano ; J. Sasai ; K. Tanaka ; K. Hirao |
| Temperature Dependent Hall Measurements on CdGeAs[subscript 2] / A.J. Ptak ; S. Jain ; T.H. Myers |
| Reduction of the Optical Absorption of Zinc Germanium Phosphide Via Post-Growth Thermal Anneal / How-Ghee Ang ; Leng-Leng Chng ; Yiew-Wang Lee ; Colin J. Flynn ; Phil C. Smith ; Anthony W. Vere |
| Evidence of High Electron Mobility in CdGeAs[subscript 2] Single Crystals |
| Photoluminescence and EPR of Phosphorus Vacancies in ZnGeP[subscript 2] / M. Moldovan |
| Refractive Index Measurements and New Sellmeir Coefficients of Zinc Germanium Phosphide From 2-9 Microns With Implications for Phase Matching in Optical Parametric Oscillators / David E. Zelmon ; Elizabeth ; A. Hanning ; Peter Schunemann |
| ZnGeP[subscript 2]: Optical Transparency and Melt Composition / G.A. Verozubova ; A.I. Gribenyukov ; A.W. Vere ; C. Flynn ; Y.F. Ivanov |
| Analysis of Cr-Doped CdGeAs[subscript 2] Using Thermal Admittance Spectroscopy / A.W. Saxler ; J.T. Goldstein ; J. Solomon |
| Modeling of the Properties of Dopants in the NLO Semiconductor CdGeAs[subscript 2] / Ravindra Pandey ; Melvin C. Ohmer ; A. Costales ; J.M. Recio |
| Interdiffusion in Quantum Wells |
| Quantum Well Intermixing Using Sputtered Silica for Photonic Integrated Circuits Operating Around 1550 nm / John H. Marsh ; A. Catrina Bryce ; Olek P. Kowalski ; Stewart D. McDougall ; Maolong Ke ; Bocang Qiu ; Yahong Qian |
| Influence of SiO[subscript x] Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells / P.N.K. Deenapanray ; H.H. Tan |
| Degradation of Intersubband Transitions in Electron Irradiated GaAs/AlGaAs Multiple Quantum Wells With Superlattice Barriers / C.P. Morath ; H.J. von Bardeleben |
| Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing / A. Saher Helmy ; A.C. Bryce ; C.N. Ironside ; J.S. Aitchison ; J.H. Marsh ; S.G. Ayling |
| Control of the Intermixing of InGaAs/InGaAsP Quantum Well in Impurity Free Vacancy Disordering by Changing NH[subscript 3] Flow Rate During the Growth of SiN[subscript x] Capping Layer / W.J. Choi ; H.T. Yi ; D.H. Woo ; S. Lee ; S.H. Kim ; K.N. Kang ; J. Cho |
| Theoretical and Experimental Investigation of Disordering Effects on Photoluminescence Spectra of InGaAs/InGaAsP Quantum Wells / J.C. Yi |
| Photoluminescence Measurements in Interband Transition in Fast Neutron Irradiated In[subscript 0.07]Ga[subscript 0.93]As/Al[subscript 0.4]Ga[subscript 0.6]As Multiple Quantum Wells / S. Subramanian |
| Author Index |
| Subject Index |
| Preface |
| Materials Research Society Symposium Proceedings |
| Antimondie Related Materials and Devices |
図書
