| Preface |
| List of Contributors |
| Introduction to Hydrogen in Semiconductors II / Norbert H. NickelChapter 1： |
| Isolated Monatomic Hydrogen in Silicon / Noble M. Johnson ; Chris Van de WalleChapter 2： |
| Introduction / I.： |
| Theory / II.： |
| Hydrogen in the Positive Charge State: H[superscript +] / 1.： |
| Hydrogen in the Neutral Charge State: H[superscript 0] / 2.： |
| Hydrogen in the Negative Charge State: H[superscript -] / 3.： |
| Relative Stability of Different Charge States and Negative-U Character / 4.： |
| Experiment / III.： |
| Donor Level |
| Acceptor Level |
| Equilibrium Densities |
| Conclusions / IV.： |
| Electron Paramagnetic Resonance Studies of Hydrogen and Hydrogen-Related Defects in Crystalline Silicon / Yurij V. GorelkinskiiChapter 3： |
| Interstitial (BC) Hydrogen in Silicon |
| Experimental Procedure |
| EPR Spectrum of Bond-Centered Hydrogen |
| Stress-Induced Alignment of Bond-Centered Hydrogen |
| Thermally Activated Annealing |
| EPR of Hydrogen-Related Complexes in Silicon |
| Hydrogen-Intrinsic Defect Complexes |
| EPR of Platinum-Hydrogen and Sulphur-Hydrogen Complexes |
| ENDOR Spectra of Si--H Bonds at the (111) Si Surface |
| ENDOR of Hydrogen in the Oxygen Thermal Donor (NL10) |
| Hydrogen-Induced Effects in Silicon |
| Hydrogen-Associated Shallow Donors in Hydrogen-Implanted Silicon |
| Stress-Induced Alignment of the AA1 Spectrum |
| Neutral Charge State of Hydrogen-Associated Donor |
| EPR Evidence of Hydrogen-Enhanced Diffusion of Al in Silicon |
| Summary and Conclusions / V.： |
| Hydrogen in Polycrystalline Silicon / Chapter 4： |
| Experimental Techniques |
| Sample Preparation and Characterization |
| Hydrogen Passivation |
| Characterization |
| Hydrogen Diffusion |
| Hydrogen Diffusion from a Plasma Source |
| Hydrogen Diffusion from a Silicon Layer |
| Hydrogen Density of States |
| Hydrogen Passivation of Grain-Boundary Defects |
| Metastability |
| Light-Induced Defect Generation |
| Metastable Changes in the Electrical Conductivity |
| Hydrogen-Induced Defects During Plasma Exposure / VI.： |
| Generation of Acceptor-Like Defects |
| Platelets |
| Summary and Future Directions / VII.： |
| Hydrogen Phenomena in Hydrogenated Amorphous Silicon / Wolfhard BeyerChapter 5： |
| Material Characterization by Hydrogen Effusion and Infrared Absorption |
| Measurement Techniques and Material Preparation |
| Hydrogen Effusion Data |
| Infrared Absorption Data |
| Experimental Hydrogen Diffusion and Solubility Data |
| Hydrogen Diffusion Data |
| Hydrogen Solubility Data |
| Hydrogen Diffusion and Effusion Effects |
| Hydrogen Diffusion Processes |
| Hydrogen Density of States Distribution and Hydrogen Chemical Potential |
| Temperature Shift of Hydrogen Chemical Potential and Meyer-Neldel Rule of Hydrogen Diffusion |
| Time Dependence of Hydrogen Diffusion Coefficient |
| Deviations from Error-Function Diffusion Profiles / 5.： |
| Plasma In-Diffusion Versus Layer Diffusion / 6.： |
| Relation Between SIMS Diffusion Data and Hydrogen Effusion Data / 7.： |
| Interrelation Between IR Absorption Spectra and Effusion Transients / 8.： |
| Hydrogen Solubility Effects |
| Solubility in Compact Material |
| Hydrogen-Related Void Formation |
| Hydrogen Interactions with Polycrystalline and Amorphous Silicon--Theory / Chris G. Van de WalleChapter 6： |
| Role of Hydrogen in Amorphous and Polycrystalline Silicon |
| General Features of Hydrogen in Silicon |
| Computational Approaches |
| Hydrogen Interactions With Amorphous Silicon |
| Hydrogen Motion - Introduction |
| Hydrogen Interactions with Dangling Bonds |
| Hydrogen Interactions with Overcoordination Defects |
| Hydrogen Interactions with Weak Si--Si Bonds |
| Simulations of Amorphous Networks |
| Hydrogen Diffusion and Metastability - Discussion |
| Hydrogen Versus Deuterium for Passivation of Dangling Bonds |
| Grain Boundaries |
| Hydrogen Interactions with Grain Boundaries |
| Hydrogen-Induced Generation of Donor-Like Metastable Defects |
| Hydrogen-Induced Generation of Acceptor-Like Defects |
| Conclusions and Future Directions |
| Hydrogen in Polycrystalline CVD Diamond / Karen M. McNamara RutledgeChapter 7： |
| Solid-State Characterization Techniques |
| Fourier Transform Spectroscopy |
| Nuclear Magnetic Resonance |
| Electron Paramagnetic Resonance |
| Other Analysis Techniques |
| Results of Solid-State Analysis |
| Covalent Bonding Environments |
| Quantitative Hydrogen Concentrations |
| Local Hydrogen Distribution |
| Proximity to Paramagnetic Defects |
| Macroscopic Hydrogen Distributions |
| Effects of Hydrogen on Observed Properties |
| Infrared Transmission |
| Thermal Conductivity |
| Summary |
| Dynamics of Muonium Diffusion, Site Changes and Charge-State Transitions / Roger L. LichtiChapter 8： |
| Transverse-Field Methods |
| Longitudinal-Field Methods |
| Identification and Characterization of Muonium States |
| Neutral Paramagnetic Centers |
| Charged Diamagnetic Centers |
| Dynamics of Muonium Transitions |
| Silicon: The Basic Model |
| Germanium |
| Gallium Arsenide |
| Other III-V Materials |
| Relevance to Hydrogen Impurities |
| Hydrogen in III-V and II-VI Semiconductors / Matthew D. McCluskey ; Eugene E. HallerChapter 9： |
| Hydrogen in III-V Semiconductors |
| Hydrogen in GaAs |
| Hydrogen in AlAs |
| Hydrogen in InP |
| Hydrogen in GaP |
| Hydrogen in AlSb |
| Hydrogen in GaN |
| Hydrogen in Other III-V Semiconductors |
| Hydrogen in II-VI Semiconductors |
| Hydrogen in ZnSe |
| Hydrogen in CdTe |
| Summary and Future Discussion |
| The Properties of Hydrogen in GaN and Related Alloys / S. J. Pearton ; J. W. LeeChapter 10： |
| Hydrogen in As-Grown Nitrides |
| Doped Material |
| Sources of Hydrogen |
| Diffusion |
| Dopant Passivation |
| Calcium |
| Carbon |
| Diffusion and Reactivation Mechanism |
| Alloys |
| In-Containing Nitrides |
| Mechanisms |
| Heterostructures |
| Role of Hydrogen During Processing |
| Implant Isolation |
| Wet Processing |
| Deposition and Etching |
| Theory of Hydrogen in Nitrides |
| Theory of Hydrogen in GaN / Jorg NeugebauerChapter 11： |
| Method |
| Defect Concentrations and Solubility |
| Energetics, Atomic Geometries, and Electronic Structure |
| Monatomic Hydrogen in GaN |
| Atomic Geometries and Stable Positions |
| Migration Path and Diffusion Barriers |
| Formation Energies and Negative-U Effect |
| Hydrogen Molecules in GaN |
| Hydrogen-Acceptor Complexes in GaN |
| The Mg-H Complex |
| Other H-Acceptor Complexes |
| Complexes of H With Native Defects |
| Hydrogen Interacting with Nitrogen Vacancies |
| Hydrogen Interacting with Gallium Vacancies |
| Role of Hydrogen in Doping GaN |
| Doping in the Absence of Hydrogen |
| Doping in the Presence of Hydrogen |
| Activation Mechanism of the Dopants |
| General Criteria for Hydrogen to Enhance Doping / VIII.： |
| Conclusions and Outlook / IX.： |
| Index |
| Contents of Volumes in This Series |
| Hydrogenation Methods / J.I. Pankove ; N.M. Johnson ; C.H. Seager |
| Hydrogenation of Defects in Crystalline Silicon |
| Hydrogen Passivation of Damage Centers in Semiconductors / J.W. Corbett ; P. De*abak ; U.V. Desnica ; S.J. Pearton |
| Neutralization of Deep Levels in Silicon |
| Neutralization of Shallow Acceptors in Silicon |
| Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-type Silicon |
| Vibrational Spectroscopy of Hydrogen-Related Defects in Silicon / M. Stavola |
| Hydrogen in Semiconductors: Ion Beam Techniques / A.D. Marwick |
| Hydrogen Migration and Solubility in Silicon / C. Herring |
| Hydrogen-Related Phenomena in Crystalline Germanium / E.E. Haller |
| Hydrogen Diffusion in Amorphous Silicon / J. Kakalios |
| Neutralization of Defects and Dopants in III*b1V Semiconductors / J. Chevallier ; B. Clerjaud ; B. Pajot |
| Computational Studies of Hydrogen-Containing Complexes in Semiconductors / G.G. DeLeo ; W.B. Fowler |
| Muonium in Semiconductors / R.F. Kiefl ; T.L. Estle |
| Theory of Isolated Interstitial Hydrogen and Muonium in Crystalline Semiconductors / C.G. Van de Walle |
| Each chapter includes references |
| Preface |
| List of Contributors |
| Introduction to Hydrogen in Semiconductors II / Norbert H. NickelChapter 1： |
図書
