| Preface A.Committees |
| Preface C.Committees |
| Symposium A: Novel Wide Bandgap Materials for Optoelectronic and Electronic Applications |
| Electronic Structure of Shallow Impurities in GaN Studied via Bound Exciton Magnetooptics (invited) / R. Stepniewski ; A. Wysmolek ; M. Potemski |
| Optical Detection of 2DEG in GaN/A1GaN Structures-High Magnetic Field Studies / B. Chwalis ; W. Knap ; J.M. Baranowski ; N. Grandjean ; J. Massies ; P. Prystawko ; I. Grzegory |
| Magnetotransport Studies of Ga(Mn,Fe)N Bulk Crystals / C. Jastrzebski ; W. Gebicki ; M. Zdrojek ; M. Bockowski ; B. Strojek ; T. Szyszko ; M. Kaminski ; S. Podsiadlo |
| Sub-micron InGaN Ring Structures for High-efficiency LEDs / H.W. Choi ; P.R. Edwards ; C. Liu ; C.W. Jeon ; R.W. Martin ; I.M. Watson ; M.D. Dawson ; S. Tripathy ; S.J. Chua |
| Suprisingly Low Built-in Electric Fields in Quaternary AlInGaN Heterostructures / S. Anceau ; P. Lefebvre ; T. Suski ; S.P. Lepkowski ; H. Teisseyre ; L.H. Dmowski ; L. Konczewicz ; A. Kaminska ; A. Suchocki ; H. Hirayama ; Y. Aoyagi |
| Multi-phonon Processes in C 6v 4 (P6 3 mc) Hexagonal Semiconductors: GaN, ZnO, ZnS, BeO, CdS, and A1 2 O 3 - Sapphire: D 3d 6 (R3c) / H. W. Kunert |
| Site Symmetry of Erbium Centers in GaN / V. Glukhanyuk ; H. Przybylinska ; A. Kozanecki ; W. Jantsch |
| Luminescent Properties of Wide Bandgap Materials at Room Temperature / M. Godlewski ; J. Szmidt ; A. Olszyna ; A. Werbowy ; E. Lusakowska ; M.R. Phillips ; E. M. Goldys ; A. Sokolowska |
| Luminescence Transients in Highly Excited GaN Grown by Hydride Vapor-phase Epitaxy / S. JurÃ…Ãenas ; S. Miasojedovas ; G. Kurilcik ; A. Zukauskas ; P.R. Hageman |
| Self Heating and Microwave Noise in A1GaN/GaN / L. Ardaravicius ; J. Liberis ; A. Matulionis ; L.F. Eastman ; J.R. Shealy ; A. Vertiatchikh |
| In-depth and In-plane Profiling of Light Emission Properties of InGaN-based Laser Diode / E.M. Goldys ; T. Böttcher ; S. Figge ; D. Hommel ; R. Czernecki ; M. Leszczynski ; P. Perlin ; S. Porowski |
| Cathodoluminescence and Atomic Force Microscopy Study of n-type Doped GaN Epilayers / R. Bozek |
| Compensation Mechanisms in Magnesium Doped GaN / H. Przbylinska ; J.P. Bergman ; B. Monemar |
| Study of Long-term Stability of Ohmic Contacts to GaN / E. Kaminska ; K. Golaszewska ; A. Piotrowska ; A. Kuchuk ; R. Kruszka ; E. Papis ; R. Szeloch ; P. Janus ; T. Gotszalk ; A. Barcz |
| Ipact of Post-growth Thermal Annealing on Emission of InGaN/GaN Multiple Quantum Wells / Yung-Chen Cheng ; Shih-wei Feng ; C.C. Yang ; Cheng-Ta Kuo ; Jian-Shihn Tsang |
| Optical Characterization of GaN Doping Superlatices: As Grown, Hydrogen Implanted, and Annealed / H.W. Kunert ; D.J. Brink ; M. Hayes ; J. Malherbe ; L. Prinsloo ; J. Barnas ; A.G.I. Machatine ; M.W. Diale |
| Energy Transfer to Er 3+ Ions in Silicon-rich-silicon Oxide: Efficiency Limitations / D. Kuritsyn |
| Gap State Absorption in A1GaN Photoconductors and Solar-blind Photodetectors / V. Lebedev ; I. Cimalla ; U. Kaiser ; O. Ambacher |
| GaN on Si Substrates for LED and LD Applications / Suzuka Nishimura ; Satoru Matsumoto ; Kazutaka Terashima |
| Sensitive In 0.53 Ga 0.47 As/InP (SI) magnetic Field Sensors / T. Przeslawski ; A. Wolkenberg ; K. Reginski ; J. Kaniewski |
| Thermoelectric and Thermal Properties of AlInN Thin Films Prepared by Reactive Radio-frequency Sputtering / Shigeo Yamaguchi ; Ryohei Izaki ; Yasuo Iwamura ; Atsushi Yamamoto |
| Kinetics of Radiative Recombination of the "pseudo-donor-pseudo-accceptor" Pairs of InGaN/GaN / A.J. Zakrzewski |
| Cathodoluminescence Properties of Zinc Oxide Nanoparticle (invited) / O. Gelhausen |
| Optical and Magnetic Resonance Investigations of ZnO Crystals Doped |
| Preface A.Committees |
| Preface C.Committees |
| Symposium A: Novel Wide Bandgap Materials for Optoelectronic and Electronic Applications |
図書