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1.

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図書
1. Proceedings of the twelfth International Symposium on Plasma Processing
editor, G.S. Mathad ; [sponsored by] Dielectric Science & Technology and electronics Divisions
出版情報: Pennington, NJ : the Electrochemical Society, Inc., c1998  viii, 292 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-4
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図書
2. Proceedings of the eleventh International Symposium on Plasma Processing
editors, G.S. Mathad, M. Meyyappan ; [sponsored by] Dielectric Science and Technology and electronics Divisions
出版情報: Pennington, NJ : the Electrochemical Society, Inc., c1996  xi, 720 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 96-12
3.

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図書
3. Proceedings of the Eighth Symposium on Plasma Processing
edited by G.S. Mathad, D. W. Hess
出版情報: Pennington, N.J. : Electrochemical Society, c1990  xi, 787 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 90-14
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図書
4. Proceedings of the Seventh Symposium on Plasma Processing
edited by G.S. Mathad, G.C. Schwartz, D.W. Hess
出版情報: Pennington, N.J. : Electrochemical Society, c1988  viii, 400 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-22
5.

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図書
5. Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control
edited by G.S. Mathad, Y. Horiike ; [sponsored by the] Dielectric Sicence and Technology and Electronics Divisio
出版情報: Pennington, NJ : Electrochemical Society, c1993  x, 438 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 93-21
6.

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図書
6. Proceedings of the tenth symposium on plasma processing
edited by G.S. Mathad, D.W. Hess ; [sponsored by] Dielectric Science and Technology and electronics Divisions, the Electrochemical Society
出版情報: Pennington, NJ : the Electrochemical Society, Inc., c1994  xi, 606 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 94-20
7.

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図書
7. Proceedings of the Ninth Symposium on Plasma Processing
edited by G.S. Mathad, D.W. Hess
出版情報: Pennington, NJ : Electrochemical Society, c1992  xiii, 654 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 92-18
8.

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図書
8. Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium
editor, G.S. Mathad ; assistant editors, D.W. Hess ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c2000  x, 378 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-30
9.

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図書
9. Interconnect and contact metallization for ULSI : proceedings of the international symposium
editors, G.S. Mathad ...[et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  ix, 340 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-31
10.

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図書
10. Plasma processing XIII : proceedings of the international symposium
editor, G.S. Mathad ; assistant editors, G.K. Celler ... [et al.] ; [cosponsored by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  ix, 394 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-6
11.

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図書
11. Proceedings of the third Symposium on Plasma Processing
edited by: J. Dieleman, R.G. Frieser, G. S. Mathad
出版情報: Pennington, NJ : Electrochemical Society, c1982  xi, 516 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 82-6
12.

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図書
12. Proceedings of the fourth Symposium on Plasma Processing
edited by G.S. Mathad, G.C. Schwartz, G. Smolinsky ; [sponsored by] Dielectrics and Insulation and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c1983  x, 649 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 83-10
13.

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図書
13. Proceedings of the Sixth Symposium on Plasma Processing
edited by G.S. Mathad, G.C. Schwartz, R.A. Gottscho
出版情報: Pennington, NJ : Electrochemical Society, c1987  x, 754 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 87-6
14.

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図書
14. Thin film materials, processes, and reliability : proceedings of the international symposium
editor, G.S. Mathad ; assistant editors, M. Engelhardt ...[et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 216 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-24
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図書
15. Copper interconnects, new contact metallurgies, structures, and low-k interlevel dielectrics : proceedings of the internatioal symposium
editor, G.S. Mathad ; assistant editors, B.C. Baker ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics, Electrodeposition
出版情報: Pennington, N.J. : Electrochemical Society, c2003  ix, 346 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-22
16.

図書
図書
16. Proceedings of the Fifth Symposium on Plasma Processing
edited by G.S. Mathad, G.C. Schwartz, G. Smolinsky
出版情報: Pennington, NJ : Electrochemical Society, c1985  x, 619 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 85-1
17.

図書
図書
17. Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes
editors, G.S. Mathad, M. Meyyappan, M. Engelhardt ; Dielectric Science & Technology, Electronics, and Electrodeposition Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1998  ix, 370 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-30
18.

図書
図書
18. Plasma processing XIV : proceedings of the international symposium
editor, G.S. Mathad ; assistant editors, M.D. Allendorf, R.E. Sah, M. Yang ; sponsoring divisions, Dielectric Science and Technology and Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 324 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-17
目次情報: 続きを見る
Preface
Plasma Enhanced Deposition
Process and Material Properties of PECVD Boron-doped Amorphous Silicon Films / H. Nominanda ; Y. Kuo
Properties of Boron-doped Amorphous Silicon Films Obtained with a Low Frequency Plasma / A. Heredia-J ; A. Torres-J ; A. Jaramillo-N ; F.J. De la Hidalga-W ; C. Zuniga-I ; A. Munguia-C
Si Epitaxial Growth on Atomic-Order Nitrided Si (100) using an ECR Plasma / M. Mori ; T. Seino ; D. Muto ; M. Sakuraba ; J. Murota
Optimizing Pulse Protocols in Plasma-Enhanced Atomic Layer Deposition / V. Prasad ; M.K. Gobbert ; T.S. Cale
High Density Plasma Deposited Silicon Nitride Films for Coating InGaAlAs High-Power Lasers / R.E. Sah ; F. Rinner ; R. Keifer ; M. Mikulla ; G. Weimann
High Productivity 300 mm HDP-CVD for Next-Generation Gap Fill Processes / B. Geoffrion ; N. Dubey ; P. Krishnaraj
Modeling & Mechanisms
Plasma Hydrogenation of a Buried Trap Layer in Silicon: Formation of a Platelet Layer / A.Y. Usenko ; W.N. Carr ; B. Chen
Integrated Modeling Investigation of Plasma Dielectric Etching Processes / D. Zhang ; S. Rauf ; T.G. Sparks ; P.L.G. Ventzek
Plasma-Surface Kinetics and Feature Profile Evolution in Cl[subscript 2] + HBr Etching of Poly-silicon / W. Jin ; S.A. Vitale ; H.H. Sawin
Surface Treatment of SiC using NF[subscript 3]/O[subscript 2] Plasmas / T. Kai ; W. Shimizu ; A. Hibi ; T. Iwase ; T. Abe ; M. Inaba ; Z. Ogumi ; T. Tojo ; A. Taska
Quantitative Analysis and Comparison of Endpoint Detection Based on Multiple Wavelength Analysis - Part I: Multi-Wavelength Method / B.E. Goodlin ; D.S. Boning
Quantitative Analysis and Comparison of Endpoint Detection Based on Multiple Wavelength Analysis - Part II: Noise Analysis of Multi-Wavelength OES
Equipment / Plasma Etching II：
Investigations of 300 mm Wafer Tool Set Progress and Performance / K. Mautz
Simultaneous Fault Detection and Classification for Semiconductor Manufacturing Tools / B.M. Wise
Effects of Showerhead Face Chemistry on Capacitively Coupled Plasma Discharges / B. Devulapalli ; G.I. Font
Gate Dielectrics and Silicon / Plasma Etching III：
Differential Surface Charging of the Dielectric during Plasma Etching and Surface Charge Leakage Kinetic / M.K. Abatchev ; B.J. Howard ; D.S. Becker ; R.L. Stocks ; J. Chapman
Thickness Scaling of Gate Dielectric on Plasma Charging Damage in MOS Devices / K-S. Chang-Liao ; P-J. Tzeng
Gate Oxide Integrity and Micro-loading Characterization of 300 mm Process Tools
Measurement of Device Charging Damage in a Dielectric Etch 300 mm Chamber with a Bias Voltage Diagnostic Cathode / M.C. Kutney ; S. Ma ; K. Horioka ; R. Lindley ; S. Kats ; T. Kropewnicki ; K. Doan ; H. Shan
Etching of High-k Gate Dielectrics and Gate Metal Candidates / S.K. Han ; I. Kim ; H. Zhong ; G.P. Heuss ; J.H. Lee ; D. Wicaksana ; J.P. Maria ; V. Misra ; C.M. Osburn
Etching High Aspect Ratio Silicon Trenches / S. Panda ; R. Ranade ; G.S. Mathad
Inverse Micro-loading Effect in Reactive Ion Etching of Silicon / S. Jensen ; O. Hansen
Plasma Etched Micro-machined Silicon Stampers for Plastic Bio-Technology Applications / D. Weston ; W.J. Dauksher ; D. Rhine ; T. Smekal ; P.J. Stout
Silicon Dioxide / Plasma Etching IV：
Radical Control in a Hole to Break an Etch-Stop Barrier in Highly Selective HAC Etching / N. Negishi ; K. Yokogawa ; T. Yoshida ; M. Izawa
Etching vs Deposition: The Effect on Profiles and Etching Yield Curves for Oxide Etching / O. Kwon
Dual Damascene, Low-k / Plasma Etching V：
Effect of Oxygen and Nitrogen Additions on Silicon Nitride Reactive Ion Etching in Fluorine Containing Plasmas / C. Reyes-Betanzo ; S.A. Moshkalyov ; A.C.S. Ramos ; M.A. Cotta ; J.W. Swart
A Novel Approach to Reduce Via Corner Faceting in the Via-First, No Middle Stop Layer Dual Damascene Trench Etch / Y-S. Kim ; K.L. Doan ; C. Bjorkman ; A. Paterson ; Z. Sui
Patterning 180 nm Copper Oxide Dual Damascene Baseline with 193 nm Resists / V. Bakshi ; G. Smith
Copper Fine Patterns Etched with HBr Plasma Based Processes / S. Lee
Intellectual Property Creation from Semiconductor Process and Equipment Development
Author Index
Subject Index
Preface
Plasma Enhanced Deposition
Process and Material Properties of PECVD Boron-doped Amorphous Silicon Films / H. Nominanda ; Y. Kuo
19.

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図書
19. Thin film materials, processes, and reliability, plasma processing for the 100 nm node and copper interconnects with low-k inter-level dielectric films : proceedings of the international symposium
editor, G.S. Mathad ; assistant editors, T. S. Cale ...[et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  x, 424 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-13
目次情報: 続きを見る
Preface
Plasma Processing for the 100 nm Node / Part I：
Plasma Processes
Kinetic Modeling for Multi-Component Thin Film Growth in Plasma-Enhanced Atomic Layer Deposition / J-H. Kim ; J-Y. Kim ; P-K. Park ; S-W. Kang
Incidence of Deposition Parameters on the Structural Properties of Y[subscript 2]O[subscript 3] Grown by Pulsed Injection PE-MOCVD / C. Durand ; C. Vallee ; O. Salicio ; V. Loup ; M. Bonavalot ; O. Joubert ; C. Dubourdieu
Copper-Barrier and Hard-Mask Elaboration by Plasma-Enhanced Chemical Vapor Deposition Using Organosilane Precursors / B. Remiat ; F. Fusalba ; P. Maury ; V. Jousseaume ; C. Lecornec ; F. Gaillard ; J. Durand
Gas-Phase and Surface Reactions in Plasma Enhanced Chemical Etching of High-k Dielectrics / L. Sha ; J.P. Chang
A Comparative Study of the Etching Behavior of Thin AlN and Al[subscript 2]O[subscript 3] Films / M. Engelhardt
Etching of Low-k Interconnect Materials for Next Generation Devices / T. Chevolleau ; N. Posseme ; L. Vallier ; I. Thomas-Boutherin
Resist Transformation during Etching Steps Involved in Patterning Low-k Dielectric Materials: Impact on Process Control / E. Pargon
Adhesion of Copper and Sulfur-Modified SiLK / D.-L. Bae ; J.J. Senkevich ; C. Kezewski ; Y. Kwon ; T.S. Cale
Porous SiOCH Modification Studies Induced by Ashing Processes / Thomas-Boutherin
Modeling Investigation of Plasma Clean Processes / D. Zhang ; D. Denning
Copper Interconnects with Low-k Inter Level Dielectric Films / Part II：
Copper Deposition
Preparation of Cu Films on Polymer Substrate by ECR-MOCVD Coupled with DC Bias at Room Temperature / J-K. Lee ; B-W. Cho
Effect of Novel Plasma Treatment on Superfilling Behavior in Chemically Enhanced CVD (CECVD) Cu Process / S-G. Pyo ; W-S, Min ; D-W. Lee ; S. Kim ; J-G. Lee
A Model of Copper Deposition for the Damascene Process / C. Gabrielli ; J. Kittel ; P. Mocoteguy ; H. Perrot ; A. Zdunek ; P. Bouard ; M. Haddix ; L. Doyen ; M.C. Clech
AFM Observation of Microstructural Evolution at Room Temperature in Electrodeposited Copper Metallization / S. Ahmed ; D.N. Buckley ; A. Arshak ; A.M. O'Connell ; L.D. Burke
"Seedless" Electrochemical Deposition of Copper on Liner-Materials for ULSI Devices / D.J. Duquette ; S.J. Kim ; M.J. Shaw
Electroless Metallization of Hydrogen-Terminated Si[left angle bracket]100[right angle bracket] Surface Functionalized by Viologen / W.H. Yu ; E.T. Kang ; K.G. Neoh
Barrier and Low-k Films
TiZrN as a Copper Barrier for 0.13 [mu]m and 0.09 [mu]mTechnology Nodes / L. Swedberg ; C. Prindle
Nanostructured Ta-Si-N Thin Films as Diffusion Barriers between Cu and SiO[subscript 2] / L.W. Lai ; C.C. Chang ; J.S. Chen ; Y.K. Lin
Selectivity Studies on Tantalum Barrier Layer for Copper Chemical Mechanical Planarization / A. Vijayakumar ; T. Du ; K.B. Sundaram ; V. Desai
Investigation of Barrier Layers for Cu-Ultra Low-k Porous Polymer Integration / L.Y. Yang ; D.H. Zhang ; C.Y. Li ; P.D. Foo ; K. Prasad ; C.M. Tan
Atomic Layer Deposition of Ruthenium Glue Layer for Copper Damascene Interconnect / O-K. Kwon
Introducing Advanced ULK Dielectric Mateials in Interconnects: Performance and Integration Challenges / C. Le Cornec ; K. Haxaire ; T. Mourier ; P.H. Haumesser ; S. Maitrejean ; J. Simon ; A. Chabli ; G. Passemard
Surface Modification of Porous Low-k Dielectrics / Q.T. Le ; C.M. Whelan ; H. Struyf ; S.H. Brongersma ; T. Conard ; W. Boullart ; S. Vanhaelemeersch ; K. Maex
Structural and Electrical Characteristics of Low Dielectric Constant Porous Hydrogen Silsesquioxane for Cu Metallization / J.H. Wang ; P.T. Liu ; T.C. Chang ; W.J. Chen ; S.L. Cheng ; J.Y. Lin ; L.J. Chen
Nanoporous Low-k Polyimide Films Prepared from Poly(Amic Acid) with Grafted Poly(Acrylic Acid)/Poly (Ethylene Glycol) Side Chains / W.C. Wang ; C.K. Ong ; L.F. Chen
X-Ray Photoelectron Spectroscopic Study of Surface Modification of SiLK under UV-Irradiation / Y. Uchida ; T. Fukuda ; H. Yanazawa
Characteristics of Low-k Methyl-Silsesquiazane (MSZ) for CMP Process Using Oxygen Plasma Treatment / T.M. Tsai ; S.T. Yan ; Y.C. Chang ; H. Aoki ; T.Y. Tseng
Copper CMP and Reliability
Electrochemical Planarization of Copper
A Multiscale Mechanical CMP Model for Patterned Wafers / J. Seok ; C.P. Sukam ; A.T. Kim ; J.A. Tichy
The Roles of Complexing Agents on Copper CMP / G. Lim ; T.E. Kim ; J.-H. Lee ; J. Kim ; H.-W. Lee
The Effect of Inhibitor and Complexing Agents on Cu CMP / Y. Luo
Role of Oxidizer and Inhibitor on Chemical Mechanical Planarization of Copper / S.C. Kuiry ; S. Seal
Effect of Abrasive Particles on Chemical Mechanical Polishing Performance / D. Tamboli ; G. Banerjee ; S. Chang ; M. Waddell ; I. Butcher ; Q. Arefeen ; S. Hymes
Chemical Mechanical Planarization of Ruthenium for Capacitor Bottom Electrode in DRAM Technology / S-H. Lee ; Y-J. Kang ; J-G. Park ; S-I. Lee
Industry Challenges in Post-Etch Cleaning Chemistries for Advanced Copper/Low-k Applications / M.A. Fury
Cleaning of Copper Surface Using Vapor-Phase Organic Acids / T. Yagishita ; K. Ishikawa ; M. Nakamura
Time-Zero Failure Current Measurement for Early Monitoring of Defective Cu Lines at Wafer Level / J-H. Park ; B-T. Ahn
Annealing Characteristics of Copper Films for Power Device Applications / L. Castoldi ; S. Morin ; G. Visalli ; T. Fukada ; M. Ouaknine ; E.H. Roh ; W.S. Yoo
The Stability of Carbon-Doped Silicon Oxide Low Dielectric Constant Thin Films / Y.H. Wang ; R. Kumar
Nickel Silicide Formation Using a Stacked Hotplate-Based Low Temperature Annealing System / T. Murakami ; B. Froment ; V. Carron ; W-S. Yoo
3-D Interconnects
3-D Electromigration Modeling and Simulation in Aluminum-Silicon Dioxide and Copper-Low-k Multilevel Interconnects / V. Sukharev ; R. Choudhary ; C.W. Park
Transient Thermal and Mechanical Modeling of 3D-IC Structures / J. Zhang ; J.-Q. Lu ; R.J. Gutmann
3D System-on-a-Chip Using Dielectric Glue Bonding and Cu Damascene Inter-Wafer Interconnects / A. Jindal ; J.J. McMahon ; K.-W. Lee ; R.P. Craft ; B. Altemus ; D. Cheng ; E. Eisenbraum
The Impact of Wafer-Level Layer Transfer on High Performance Devices and Circuits for 3D IC Fabrication / K.W. Guarini ; A.W. Topol ; M. Ieong ; K. Bernstein ; K. Xiu ; R.V. Joshi ; R. Yu ; L. Shi ; M.R. Newport ; D.V. Singh ; G.M. Cohen ; H.B. Pogge ; S. Purushothaman ; W.E. Haensch
Wafer Bonding and Thinning Integrity for 3D-IC Fabrication
Author Index
Subject Index
Preface
Plasma Processing for the 100 nm Node / Part I：
Plasma Processes
20.

図書
図書
20. Copper Interconnects, New Contact Metallurgies/Structures, and Low-K Interlevel Dielectrics : proceedings of the International Symposium ([I] ; II)
editor, G.S. Mathad ; assistant editors, H.S. Rathore ... [et al.] ; [cosponsored by] Dielectric Science & Technology, Electronics, and Electrodeposition Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2001-2003  2 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-27, 2003-10
目次情報: 続きを見る
Preface
Copper Deposition
Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif
ECD Seed Copper Layer for Seed Enhancement in Advanced Interconnects / P.H. Haumesser ; S. Da Silva ; M. Cordeau ; X. Avale ; O. Pollet ; T. Mourier ; G. Passemard ; R. Baskaran ; T. Ritzdorf
Ultra-thin Tungsten CVD Nucleation Layer for Sub-100 nm Contact Applications / J. Gupta ; J. Sudijono ; L.C. Hsia ; S. Singh
Three-Dimensional Simulation of Superconformal Copper Deposition Based on the Curvature-Enhanced Acceletator Coverage Mechanism / E. Bar ; J. Lorenz ; H. Ryssel
Copper Electrodeposition of High Aspect Ratio Vias for Three-Dimensional Packaging / K. Kondo ; T. Yonezawa ; M. Tomisaka ; H. Yonemura ; M. Hoshino ; Y. Taguchi ; K. Takahashi
Copper Electroplating Process with Improved Stability, Conductivity and Total. Cost of Ownership / R. Preisser ; T. Dretschkow ; H. Fuerhaupter
Electroplating of Copper-Tin Alloys / R. Chebiam ; C-C. Cheng ; H. Simka ; A. Budrevich ; V. Dubin
Interactions between the Conditions of Copper Electrodeposition and the Density of Hillocks / S. Petitdidier ; M. Gregoire ; S. Segaud ; S. Courtas ; M. Juhel ; J.P. Jacquemin ; L. Dumas
Detection of Accelerator Breakdown Products in Copper Plating Baths / M. Pavlov ; E. Shalyt ; P. Bratin ; D.M. Tench
Copper Nucleation on Platinum in the Presence of Additives in Acid Copper Solution / J. Han ; M. King ; M. Stawasz ; T. Baum
An in-situ FTIR Study on Palladium Displacement Reaction for Autocatalytic Electroless Copper Deposition / Y-J. Oh ; C-H. Chung
New Additives for Super-Conformal Electroplating of Ag Thin Film for ULSI / J.J. Kim ; E.J. Ahn ; J.M. Seo
The Role of Chloride Ion in Copper Electrodeposition from Acidic Baths Containing Cl[superscript -], PEG, and SPS / M. Tan ; J.N. Harb
The Influence of 2,2'-Dipyridyl on Non-Formaldehyde Electroless Copper Plating / J. Li ; H. Hayden ; P.A. Kohl
Influence of the Anode in the Damascene Process Investigated by Electro-Chemical Impedance Spectroscopy / C. Gabrielli ; P. Mocotrguy ; H. Perrot ; A. Zdunek ; D. Nieto-Sanz ; M.C. Clech
Investigation of Copper Bath Ageing in the Damascene Process by Electro-chemical Impedance Spectroscopy / P. Mocoteguy
Barrier Films
The Proposal of All-Wet Fabrication Process for ULSI Interconnects Technologies--Application of Electroless NiB Deposition to Capping and Barrier Layers / M. Yoshino ; Y. Nonaka ; T. Yokoshima ; T. Osaka
Thickness Effect on the Diffusion Barrier Properties of ZrN in Cu/ZrN/Si Systems / C-S. Chen ; C-P. Liu ; H-G. Yang ; C-Y. A. Tsao
Characterization of Electroless Plated CoWB Barrier Films / V. Mathew ; R. Chatterjee ; S. Garcia ; L. Svedberg ; Z-X. Jiang ; R. Gregory ; K-H. Lie ; K. Yu
Effect of Ta[subscript 2]N Crystallinity on Diffusion Barrier Properties / H-C. Chung
Use of Ti[subscript x]TiN as Cap Layer for the Formation of Cobalt Silicide / M. Vulpio ; D. Fazio ; M. Bileci ; D. Mello ; C. Gerardi
Ruthenium-Based Copper Diffusion Barrier: Studied by Electrochemistry, SIMS Depth Profiling, and Sheet Resistance Measurements / O. Chyan ; R. Chan ; T. Arunagiri ; R.M. Wallace ; M.J. Kim ; T. Hurd
Low-k Inter Level Dielectric Films and CMP
A Novel Approach for Dual Damascene Trench Etch for 90 nm Low-k Inter-Connect with No Middle Etch Stop Layer / T.Q. Chen ; H. Cong ; W.P. Liu ; Y.K. Siew ; Y. Pradeep ; R. Jaiswal ; A. Jain ; I. Sim
Electrical and Mechanical Properties of Nitrogen and Fluorine Incorporated Organosilicate Glass Prepared by Plasma Enhanced Chemical Vapor Deposition / S-K. JangJian ; W-S. Hwang ; S-W. Chen ; K-H. Wei ; Y-L. Wang
Development of Spin-on Dielectric (SiLK) Etch Process for 0.13 [mu] Cu-Low k Interconnects Technology / B. Ramana Murthy ; Y.W. Chen ; X.T. Chen
The Pore Structure, Property, and Performance of a Spin-on Porous Low-k Dielectric / Y. Liu ; B. Foran ; D. Gidley ; W-L. Wu ; H. Shirataki ; H. Hanahata
Evaluation of Low-k Porous Silica Film Incorporated with Ethylene Groups / Y. Uchida ; M. Oikawa ; Y. Itoh ; K. Ishida
Strip Process Optimization for Porous ULK Films / I.J. Kalinowski ; C. Bourlot ; A. Marfoure ; O. Louveau ; S. Li ; J. Su ; G.W. Hills ; D. Louis
Characterization of Plasma Strip Processes on OSG Low-k Dielectric Films / K. Ostrowski ; I.J. Kalinovski
Reliability Characterization of Organic Ultra Low-k Film Using Voltage Breakdown / A. Krishnamoorthy ; B. Ramany Murthy ; K.Y. Yiang ; W.J. Yoo
Process-Induced Voiding in Copper Interconnect Metallization / P. Lindgren ; K. Downes ; S. Kole ; W. Murphy ; E. Cooney III ; M. Goldstein ; J. Chapple-Sokol
Planarization of Copper Layer for Damascene Interconnection by Electrochemical Polishing in Alkali-Based Solution / G-S. Park ; C-W. Chung
Characterization of a Colloidal Silica Slurry for 0.13 [mu]m Devices in a Copper CMP Process / J. Cadenhead ; G. Huffman ; D. Lewis ; A. Pamatat ; J. Verizzo ; S. Usmani ; J. Siddiqui
Mechanisms of Using Organic Acids to Clean Copper Surfaces / T. Yagishita ; K. Ishikawa ; M. Nakamura
Advanced Packaging
3-Dimensional Chip Stacking for High-Density Electronic Packaging / K. Tanida ; M. Umemoto ; K. Kojiama ; M. Ishino ; M. Bonkohara
Author Index
Subject Index
Preface
Copper Deposition
Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif
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