Microelectronics technology : polymers in advanced imaging and packaging : developed from a symposium sponsored by the ACS Division of Polymeric Materials: Science and Engineering, Inc., and the Polymers for Microelectronics Division of the Society of Polymer Science, Japan, at the 209th National Meeting of the American Chemical Society, Anaheim, California, April 2-6, 1995

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Microelectronics technology : polymers in advanced imaging and packaging : developed from a symposium sponsored by the ACS Division of Polymeric Materials: Science and Engineering, Inc., and the Polymers for Microelectronics Division of the Society of Polymer Science, Japan, at the 209th National Meeting of the American Chemical Society, Anaheim, California, April 2-6, 1995 / Elsa Reichmanis, editor... [et al.]

資料種別:

図書

出版情報:

Washington, D.C. : American Chemical Society, 1995

形態:

xii, 563 p. ; 24 cm

シリーズ名:

ACS symposium series ; 614 <BA00073096>

著者名:

ISBN:

9780841233324 [0841233322]

書誌ID:

BA2666281X

子書誌情報

フルテキスト

所蔵情報

他の版・巻

書誌詳細

注記:

Includes bibliographical references and index

著者名ヨミ:

コウブンシガッカイヒカリデンシヨウザイリョウケンキュウカイ

主題:

Microelectronic packaging--Materials--Congresses; Photoresists--Congresses; Polymers--Congresses

目次情報:

An Analysis of Process Issues with Chemically Amplified Positive Resists / O. Nalamasu ; A.G. Timko ; E. Reichmanis ; F.M. Houlihan ; A.E. Novembre ; R. Tarascon ; N. Mnzel ; S.G. Slater

The Annealing Concept for Environmental Stabilization of Chemical Amplification Resists / H. Ito ; G. Breyta ; D.C. Hofer ; R. Sooriyakumaran

Structure-Property Relationship of Acetal- and Ketal-Blocked Polyvinyl Phenols as Polymeric Binder in Two-Component Positive Deep-UV Photoresists / C. Mertesdorf ; N, Mnzel ; P. Falcigno ; H.J. Kirner ; B. Nathal ; H.T. Schacht ; R. Schulz ; A. Zettler

Lithographic Effects of Acid Diffusion in Chemically Amplified Resists / C.A. Mack

Acid Diffusion in Chemically Amplified Resists: The Effect of Prebaking and Post-Exposure Baking Temperature / J. Nakamura ; H. Ban ; A. Tanaka

Correlation of the Strength of Photogenerated Acid with the Post-Exposure Delay Effect in Positive-Tone Chemically Amplified Deep-UV Resists / E. Chin ; J.M. Kometani ; R. Harley

Following the Acid: Effect of Acid Surface Depletion on Phenolic Polymers / J.W. Thackeray ; M.D. Denison ; T.H. Fedynyshyn ; D. Kang ; R. Sinta

Water-Soluble Onium Salts: New Class of Acid Generators for Chemical Amplification Positive Resists / T. Sakamizu ; H. Shiraishi ; T. Ueno

Photoacid and Photobase Generators: Arylmethyl Sulfones and Benzyhydrylammonium Salts / J.E. Hanson ; K.H. Jensen ; N. Gargiulo ; D. Motta ; D.A. Pingor ; D.A. Mixon ; C. Knurek

Functional Imaging with Chemically Amplified Resists / A. M. Vekselman ; C. Zhang ; G.D. Darling

Hydrogen Bonding in Sulfone- and N-Methylmaleimide-Containing Resist Polymers with Hydroxystyrene and Acetoxystyrene: Two-Dimensional NMR Studies / S. A. Heffner ; M. E. Galvin ; L. Gerena ; P. A. Mirau

NMR Investigation of Miscibility in Novolac-Poly(2-methyl-1-pentene sulfone) Resists / A. E. Novembre ; P.A. Mirau

Styrylmethylsulfonamides: Versatile Base-Solubilizing Components of Photoresist Resins / T.X. Neenan ; E.A. Chandross

4-Methanesulfonyloxystyrene: A Means of Improving the Properties of tert-Butoxycarbonyloxystyrene-Based Polymers for Chemically Amplified Deep-UV Resists

Dienone-Phenol Rearrangement Reaction: Design Pathway for Chemically Amplified Photoresists / Y. Jiang ; J. Maher ; D. Bassett

Single-Layer Resist for ArF Excimer Laser Exposure Containing Aromatic Compounds / T. Ushirogouchi ; T. Naito ; K. Asakawa ; N. Shida ; M. Nakase ; T. Tada

Design Considerations for 193-nm Positive Resists / R.D. Allen ; I-Y. Wan ; G. M. Wallraff ; R. A. DiPietro ; R.R. Kunz

Top-Surface Imaged Resists for 193-nm Lithography / R. R. Kunz ; S.C. Palmateer ; M.W. Horn ; A. R. Forte ; M. Rothschild

Silicon-Containing Block Copolymer Resist Materials / A.H. Gabor ; C.K. Ober

A Top-Surface Imaging Approach Based on the Light-Induced Formation of Dry-Etch Barriers / U. Schaedeli ; M. Hofmann ; E. Tinguely

Plasma-Developable Photoresist System Based on Polysiloxane Formation at the Irradiated Surface: A Liquid-Phase Deposition Method / M. Shirai ; N. Nogi ; M. Tsunooka ; T. Matsuo

New Polysiloxanes for Chemically Amplified Resist Applications / J.C. van de Grampel ; R. Puyenbroek ; A. Meetsma ; B.A. C. Rousseeuw ; E.W.J.M. van der Drift

Environmentally Friendly Polysilane Photoresists / J.V. Beach ; D. A. Loy ; Yu-Ling Hsiao ; R. M. Waymouth

Fluoropolymers with Low Dielectric Constants: Triallyl Ether-Hydrosiloxane Resins / H.S.-W. Hu ; J.R. Griffith ; L.J. Buckley ; A.W. Snow

Photophysics, Photochemistry, and Intramolecular Charge Transfer of Polyimides / M. Hasegawa ; Y. Shindo ; T. Sugimura

Structure, Properties, and Intermolecular Charge Transfer of Polyimides / J. Ishii ; T. Matano ; T. Miwa ; M. Ishida ; Y. Okabe ; A. Takahashi

Application of Polyisoimide as a / A. Mochizuki ; M. Ueda

An Analysis of Process Issues with Chemically Amplified Positive Resists / O. Nalamasu ; A.G. Timko ; E. Reichmanis ; F.M. Houlihan ; A.E. Novembre ; R. Tarascon ; N. Mnzel ; S.G. Slater

The Annealing Concept for Environmental Stabilization of Chemical Amplification Resists / H. Ito ; G. Breyta ; D.C. Hofer ; R. Sooriyakumaran

Lithographic Effects of Acid Diffusion in Chemically Amplified Resists / C.A. Mack

Acid Diffusion in Chemically Amplified Resists: The Effect of Prebaking and Post-Exposure Baking Temperature / J. Nakamura ; H. Ban ; A. Tanaka

Correlation of the Strength of Photogenerated Acid with the Post-Exposure Delay Effect in Positive-Tone Chemically Amplified Deep-UV Resists / E. Chin ; J.M. Kometani ; R. Harley

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